Transport Properties of TlInSe2 Single Crystals

Single crystals of TlInSe₂ were prepared by a special modified Bridgman technique. The influence of temperature on the electrical conductivity, Hall effect, Hall mobility, and the carrier concentration was investigated in the temperature range 190–625 K. The energy gap of conduction was calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range. Beside this, the thermoelectric power was measured in a temperature range extending from 190 up to 485 K.     

Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe2

The electrical conductivity and the Hall effect for TlGaTe₂ crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p-type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked.     

Carrier Transport Properties of InS Single Crystals

The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature‐dependent Hall effect measurements revealed a carrier effective mass of 0.95 m₀, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.     

New technique for crystal growth and Phase Transition in TlInS2 Crystals

New technique for crystal growth was designed in the present work. The electrical conductivity and Hall effect of the TInS₂ single crystals, grown by this technique, were measured in the temperature range 150–500 K. From the measurements, the conductivity type, the energy gap, ionization energy of the impurity level, Hall mobility and carrier concentration were determined. Also the measurements revealed a presence of phase transition in the crystal at 189 and 220 K.     

On the preparation and electrical properties of thallium selenide monocrystals

Thallium Selenide single crystals were prepared by a special design using Bridgmantechnique constructed by the authors. An investigation was made on the influence of temperature on the electrical conductivity and Hall effect in two crystallographic directions. The anisotropic properties were checked, and the anisotropic factor was observed to increase with temperature decrease. The energy gap as well as the ionization energy was calculated. The conductivity throughout the entire temperature range was found to be of p-type. The Hall mobilities derived from these measurements at room temperature were of the order μH_⟂ = 42.66 cm²/vs and μH_∥ = 112.2 cm²/vs.     

Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal

Electrical conductivity (σ) and Hall coefficient (R_H) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p-type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm² V⁻¹ s⁻¹ and could described by the law μ = aTⁿ (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT^–m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10⁷ cm⁻³.     

Investigation of carrier scattering mechanisms in TlInS2 single crystals by Hall effect measurements

TlInS₂ single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100‐400 and 170‐400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole‐ and electron‐phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole‐electron pair effective masses of 0.24 m_o, 0.14 m_o and 0.09 m_o and hole‐ and electron‐phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electron‐phonon short‐range interactions mobility and p‐ to n‐type conversion in TlGaS2 crystals

The conductivity type conversion from p ‐ to n ‐type at a critical temperature of 315 K in TlGaS₂ crystals is observed through the Hall effect measurements in the temperature range of 200–350 K. The analysis of the temperature‐dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m ₀ and 0.23m ₀, respectively. In addition, the temperature‐dependent Hall mobility is found to decrease with temperature following a logarithmic slope of ∼1.6. The Hall mobility in the n ‐region is limited by the electron‐phonon short‐range interactions scattering with an electron‐phonon coupling constant of 0.21. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal Data,Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8 Single Crystals

The X‐ray diffraction has revealed that CuIn₅S₈ is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn₅S₈ crystals are measured in the temperature range of 50‐400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of ∼1.35 eV at 0 K, a carrier effective mass of 0.2 m₀ , an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.     

On the conduction mechanism and thermoelectric phenomena in In6S7 layer crystals

In the present paper, measurements of the electrical conductivity and Hall coefficient on single crystal of In₆S₇, grown by a new crystal growth technique, were done. The crystal was found to be of n-type conductivity. The low conductivity sample showed as the most striking feature an exponential increase of the Hall mobility with temperature. This effect was explained by assuming a mixed conduction and different scattering mechanisms for electrons and holes in the same temperature range. Also we have made thermoelectric power measurements to support this assumption. An energy gap of 0.64 eV was found.     

Microstructural,thermal, and electrical properties of Bi1.7V0.3Sr2Ca2Cu3Ox glass‐ceramic superconductor

A glass‐ceramic Bi_1.7V_0.3Sr₂Ca₂Cu₃O_x superconductor was prepared by the melt‐quenching method. The compound was characterized by scanning electron microscopy, x‐ray diffraction, differential thermal analysis, current‐voltage characteristics, transport resistance measurements, and Hall effect measurements. Two main phases (BSCCO 2212 and 2223) were observed in the x‐ray data and the values of the lattice parameters quite agree with the known values for 2212 and 2223 phases. The glass transition temperature was found to be 426 °C while the activation energy for crystallization of glass has been found to be E_a = 370.5 kJ / mol. This result indicates that the substitution of vanadium increased the activation energy for the BSCCO system. An offset T_c of 80 K was measured and the onset T_c was 100 K. The Hall resistivity ρ_H was found to be almost field‐independent at the normal state. A negative Hall coefficient was observed and no sign reversal of ρ_H or R_H could be noticed. The mobility and carrier density at different temperatures in the range 140‐300 K under different applied magnetic fields up to 1.4 T were also measured and the results are discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Temperature dependences of the electrical conductivity and hall coefficient of indium telluride single crystals

Conductivity type, carrier concentration and carrier mobility of InTe samples grown by Bridgmann technique were determined by the Hall effect and electrical conductivity measurements. The study was performed in the temperature range 150–480 K. Two samples with different growth rate were used in the investigation. The samples under test were P-type conducting, in accordance with previous measurements of undoped material. The Hall coefficient was found to be isotropic yielding room temperature hole concentration in the range 10¹⁵ – 10¹⁶ cm⁻³. The hole mobilities of InTe samples were in the range 1.17 × 10³ – 2.06 × 10³ cm²/V · sec at room temperature. The band – gap of InTe determined from Hall coefficient studies has been obtained equal to 0.34 ev. The scattering mechanism was checked, and the electrical properties were found to be sensitive to the crystal growth rate.     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Electric Characterization of Indium Sesquiselenide Single Crystals

Conductivity, Hall-effect measurements were performed on δ-phase In₂Se₃ single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In₂Se₃ had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R_H11 = 1.36 × 10⁴ cm³/coul, σ₁₁ = 4.138 × 10⁻³ Ω⁻¹ cm⁻¹ and R_H = 66.55 × 10⁴ cm³/coul, σ = 0.799 × 10⁻³ Ω⁻¹ cm⁻¹ for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.     

Influence of the substrate temperature on the structural,optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350‐550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T_s) on the structural, morphological, optical, and electrical properties of the films were investigated using x‐ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall‐effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80‐330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T_s. With the increase of T_s the intensity of the diffraction peaks increased and well‐resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38‐1.18 eV. Hall‐effect measurements revealed the resistivity of films in the range 112‐20 Ω cm for films deposited at different T_s. The activation energy for films deposited at different T_s was in the range of 0.14 eV‐0.28 eV as derived from the analysis of the data of low‐temperature resistivity measurements. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique

The transport properties of ternary mixed WS_xSe_2‐x single crystals have been studied by measuring the thermo power, electrical conductivities and Hall parameters in a small temperature range 303‐423 K. The electrical conductivity was highest for selenium rich WSe₂ and lowest for sulphur rich WS₂ crystals. All the crystals showed semiconducting behaviour from the temperature dependence of ‘ρ’, ‘R_H’ and ‘S’. The Hall coefficients showed that the samples are p‐type conducting. The temperature dependence of resistivity, Hall coefficients, carrier concentration showed that all of them are thermally activated. The values of activation energies, pre‐exponential factors and the scattering parameters have been determined. The dominant scattering mechanism for the charge carriers has been explained. The relation between the TEP and the concentration of charge carriers and electrical conductivity was studied. The effective masses of holes and the effective density of states have been determined. These parameters show an increase with increase in sulphur content. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and electrical properties of flash evaporated AgGaTe2 thin films

Thin films have been prepared by flash evaporation technique of a stoichiometric bulk of AgGaTe₂ compound in vacuum and analysed using X‐ray diffraction, transmission electron microscopy, selected area diffraction and energy dispersive analysis of X‐rays. The effect of substrate temperature on the structural properties – grain size, film orientation, composition, and stoichiometry of the films have been studied. It was found that the polycrystalline, stoichiometric films of AgGaTe₂ can be grown in the substrate temperature range of 473K < Ts < 573K. The influence of substrate temperature (Ts) on the electrical characteristics‐ Resistivity, Hall Mobility, Carrier concentration of AgGaTe₂ thin films were studied. The electrical resistivity was found to decrease with increase in substrate temperature up to 573K and then increases. The variation of activation energy of AgGaTe₂ thin films were also investigated. The implications are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal Data,Electrical Resisitivity and Mobility in Cu3In5Se9 and Cu3In5Te9 Single Crystals

X-ray powder diffraction data were obtained for Cu₃In₅Se₉ and Cu₃Te₉, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu₃In₅Se₉, was identified to be n-type with a room temperature resistivity of 3 × 10³ Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu₃In₅Te₉ exhibits p-type conduction with a room temperature resistivity of 8.5 × 10⁻³ Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.