Thermal Expansion of EuF<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript> Single Crystals and Their Thermal Stability

Thermal expansion of an EuF_2.136 nonstoichiometric crystal with the fluorite structure type (Eu _0.864 ²⁺ Eu _0.136 ³⁺ F_2.136, lattice parameter 5.82171(5) Å) has been experimentally investigated in the temperature range of 9–500 K. The coefficient of thermal expansion is α = 15.8 × 10^–6 K^–1 at T = 300 K. The observed anomalies in the behavior of the coefficient of thermal expansion at T > 400 K are related to the oxidation processes with partition of Eu²⁺ ions. It is established by differential scanning calorimetry that the onset temperature of EuF_{2 + x} oxidation in air is 430 K and that this process occurs in three stages. X-ray diffraction analysis shows that the oxidation is accompanied by the formation of a phase mixture based on two modifications of the Eu _{1– y} ³⁺ Eu _y ²⁺ F_3–y solid solution with the structure types of tysonite (LaF₃), orthorhombic β-YF₃ phase, and europium oxyfluorides of variable composition EuO_1–xF_{1 + 2x}, with dominance of the latter.     

Single crystals of the fluorite nonstoichiometric phase Eu 0.9162+ Eu 0.0843+ F2.084 (conductivity, transmission, and hardness)

The nonstoichiometric phase EuF_2+x has been obtained via the partial reduction of EuF₃ by elementary Si at 900–1100°C. Eu_0.916²⁺Eu_0.084³⁺F_2.084 (EuF_2.084) single crystals have been grown from melt by the Bridgman method in a fluorinating atmosphere. These crystals belong to the CaF₂ structure type (sp. gr. Fm $ \bar 3 $ \bar 3 m) with the cubic lattice parameter a = 5.8287(2) ?, are transparent in the spectral range of 0.5–11.3 μm, and have microhardness H _μ = 3.12 ± 0.13 GPa and ionic conductivity σ = 1.4 × 10⁻⁵ S/cm at 400°C with the ion transport activation energy E _a = 1.10 ± 0.05 eV. The physicochemical characteristics of the fluorite phases in the EuF₂ − EuF₃ systems are similar to those of the phases in the SrF₂ − EuF₃ and SrF₂ − GdF₃ systems due to the similar lattice parameters of the EuF₂ and SrF₂ components. Europium difluoride supplements the list of fluorite components MF₂ (M = Ca, Sr, Ba, Cd, Pb), which are crystal matrices for nonstoichiometric (nanostructured) fluoride materials M _{1 − x} R _x F_{2 + x} (R are rare earth elements).     

Unusual Thermal Behaviour of Mercurous Chloride

A precise determination of the lattice parameters and the coefficients of thermal expansion of mercurous chloride has been made at different temperatures ranging from 30 °C to 260 °C with a Unicam 19 cm high-temperature powder camera and FeKα radiation. The ‘a’ parameter increases non-linearly, whereas the ‘c’ parameter decreases linearly with temperature. Both the c/a value and the unit-cell volume are found to decrease with increasing temperature. The coefficient of thermal expansion along the ‘c’ axis, α∥, is found to have a constant negative value throughout the range of temperature studied. The positive value of α⊥ increases while the negative value of volume coefficient (β) decreases linearly with increasing temperature indicating an unusual and interesting thermal behaviour.     

Dilithium dialuminium trisilicate phase obtained using coal bottom ash

The Li₂Al₂Si₃O₁₀ glass-ceramics well crystallized and with a regular morphology was produced starting from a mixture of Li₂CO₃, TiO₂, Al₂O₃ and coal bottom ash, after reducing the magnetite phase content. Its measured thermal expansion coefficient in the temperatures range from 25 °C to 300 °C is α_(25–300) = −23.4 × 10⁻⁷ °C⁻¹. This value is ≈18% smaller than that for the commercial lithium glass-ceramics (−23.4 × 10⁻⁷ °C⁻¹ to 50 × 10⁻⁷ °C⁻¹).     

X-ray determination of thermal lattice expansion of CuSi2 + xP3 (x = 1, 2) at elevated temperatures

CuSi₂P₃ is a semiconductor having sphalerite structure with the space group F3 3m with random distribution of the copper and silicon atoms on the cation sites. Silicon is soluble in CuSi₂P₃ upto 3 moles to form CuSi_{2 + x}P₃ (x = 1, 2, 3) compounds in single phase. In continuation of our work on thermal expansion of ternary semiconductors, CuSi₃P₃ crystals have been grown by a modified Bridgman method. Using a Unicam high temperature camera, the precision lattice parameter and the coefficient of thermal expansion (CTE) of CuSi₃P₃ at various high temperatures have been evaluated from X-ray diffraction data. It has been found that the lattice parameter increases non-linearly while the coefficient of thermal expansion increases linearly with temperature. The results on thermal expansion of various semiconductors have been discussed in terms of their ionicities.     

Anomalous thermal expansion of osmium dioxide

The precision lattice parameters of osmium dioxide have been determined at different temperatures, in the temperature range 30–444 °C, using a Unicam high temperature powder camera 19 cm in diameter and CuKα radiation. The data have been used to evaluate the coefficients of thermal expansion at various temperatures by a graphical method. The ‘a’ parameter increases non-linearly with increasing temperature while the ‘c’ parameter remains constant throughout the range of temperature studied indicating a zero coefficient of expansion along the c-direction. The abnormal thermal behaviour of this compound is explained in terms of the electronic configuration of the d-shell of the cation.     

Magnetic, magnetocaloric, and lattice properties of the La(Fe x Si1 − x )13 ferromagnets

The magnetic and lattice properties of a sample of La(Fe_0.86Si_0.14)₁₃ ferromagnet have been measured. The influence that neutron irradiation has on the physical properties of this ferromagnet is studied. It is shown that the irradiation of this sample by a fluence of 3 × 10¹⁹ n/cm² increases the lattice constant a and the Curie temperature (T _C ) as the volume magnetostriction decreases. A model of ferromagnet is proposed which satisfactorily describes the dependence a(T) of the initial and irradiated samples and their magnetic properties. The temperature dependence of the change in entropy when switching the magnetic field on and off is calculated. It is established that the change in both the magnetic and lattice parts of the total entropy at the magnetic phase transition must be taken into account for La(Fe _x Si_{1 ? x} )₁₃ compounds.     

Properties and structure of (1 − x)Li2O–xNa2O–Al2O3–4SiO2 glass systems

(1 − x)Li₂O–xNa₂O–Al₂O₃–4SiO₂ glasses were studied for the progressive percentage substitution of Na₂O for Li₂O at the constant mole of Al₂O₃ and SiO₂. The crystallization temperature at the exothermic peak increased from 898 to 939 °C when the Na₂O content increases from 0 to 0.6 mol. The coefficient of thermal expansion and density of these as-quenched glasses increase from 6.54 × 10⁻⁶ °C⁻¹ to 10.1 × 10⁻⁶ °C⁻¹ and 2.378 g cm⁻³ to 2.533 g cm⁻³ when the Na₂O content increases from 0 to 0.4 mol, respectively. The electrical resistivity has a maximum value at Na₂O · (Li₂O + Na₂O)⁻¹ = 0.4. The activation energy of crystallization decreases from 444 to 284 kJ mol⁻¹ when the Na₂O content increased from 0 to 0.4 mol. Moreover, the activation energy increases from 284 kJ mol⁻¹ to 446 kJ mol⁻¹ when the Na₂O content increased from 0.4 to 0.6 mol. The FT-IR spectra show that the symmetric stretching mode of the SiO₄ tetrahedra (1035–1054 cm⁻¹) and AlO₄ octahedra (713–763 cm⁻¹) exhibiting that the network structure is built by SiO₄ tetrahedra and AlO₄.     

Influence of hydrogen on the thermomechanical properties of a-CNx:H and a-CNx films deposited by glow discharge and ion beam assisted deposition

The coefficient of thermal expansion (CTE), Young’s modulus, Poisson’s ratio, stress and hardness of a-CN_x and a-CN_x:H were investigated as a function of nitrogen concentration. Hydrogenated films were prepared by glow discharge, GD, and unhydrogenated films were prepared by ion beam assisted deposition, IBAD. Using nanohardness measurements and the thermally induced bending technique, it was possible to extract separately, Young’s modulus and Poisson’s ratio. A strong influence of hydrogen, in a-CN_x:H films, was observed on the CTE, which reaches about ∼9 × 10⁻⁶ C⁻¹, close to that of graphite (∼8 × 10⁻⁶ C⁻¹) for nitrogen concentration as low as 5 at.%. On the other hand, the CTE of unhydrogenated films increases with nitrogen concentration at a much lower rate, reaching 5.5 × 10⁻⁶ C⁻¹ for 33 at.% nitrogen.     

Electric Characterization of Indium Sesquiselenide Single Crystals

Conductivity, Hall-effect measurements were performed on δ-phase In₂Se₃ single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In₂Se₃ had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R_H11 = 1.36 × 10⁴ cm³/coul, σ₁₁ = 4.138 × 10⁻³ Ω⁻¹ cm⁻¹ and R_H = 66.55 × 10⁴ cm³/coul, σ = 0.799 × 10⁻³ Ω⁻¹ cm⁻¹ for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.     

Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray determination of thermal expansion of Na(ClO3)x(BrO3)1−x mixed crystals

Lattice constants of sodium chlorate and sodium bromate and their mixed crystals were determined over the temperature range from room temperature to 320 °C. The observed lattice constants for the various compositions show strong deviations from those expected from Vegard's rule. The lattice constants at various temperatures were fitted to polynomials of type a = a₀ + a₁t + a₂t². The linear coefficients of expansion for the Na(ClO₃)_x · (BrO₃)_1−x series varies non-linearly with composition showing negative deviations from linearity.     

Hardness of Crystals with NaCl Structure and the Significance of the GILMAN-CHIN Parameter

The microhardness of PbTe, PbSe, EuS and EuSe has been determined. The microhardness vs lattice constant plot for chalcogenides is a curve similar to the one for alkali halides. The Gilman-Chin parameter (H/C₄₄) has been calculated for a large number of crytals with NaCl structure. There is no unique value representing the entire group of crystals, the values ranging from 0.01 to 0.20. The Gilman-Chin parameter broadly correlates with the effective ionic charge (e) indicating that it is a measure of the ionicity. Empirically, it is observed that the product (H/C₄₄) · (e)² is approximately constant.     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Temperature variation of lattice parameter and thermal expansion of TmAl2

The lattice parameter of TmAl₂ has been measured from room temperature to 637 K using CuKα-radiation. The data have been used to evaluate the coefficient of thermal expansion at various temperatures. It was found that the lattice parameter increases while the coefficient of expansion remains constant throughout the range of temperature studied.     

The small anomaly in the temperature dependence of the electrical conductivity of iron containing phosphate glasses

The dc conductivities, σ,of 2 CaO·K₂O·x Fe₂O₃·(5 - x)P₂O₅ glasses (1.4 ?x?2.2) [Fe³⁺/(Fe²⁺ + Fe³⁺)= constant (0.88±0.015)] have been measured in the temperature range from room temperature to 300°C. It has been found that the glass transition temperature increases rapidly with increasing Fe/P ratio and that mixed-valence hopping type electronic conduction takes place in these glasses and every log σ versus 1/T curve obtained shows a change in slope near 100°C, which produces a small increase, 0.14 (for x=2.2)?0.18 eV (for x=1.4), in activation energy at higher temperatures. Both the activation energy and pre-exponential factor for conduction display different dependences on the Fe/P ratio in the different temperature ranges on both sides of the anomaly temperature. These results are discussed in terms of the Mott's equation for small polaron hopping.     

The molecular and crystal structure of 2-oxo-1-pyrrolidine-acetamide

C₆H₁₀N₂O₂, P1 , a = 6,607(2) Å, b = 8,538(2) Å, c = 6,392(2) Å, α = 102,43(2)°, β = 91,11(2)°, y = 79,82(2)°, V = 349,1 ų, Z = 2, D_m = 1,36 g × cm⁻³, D_x = 1,35 g × × cm⁻³, MoKα radiation, λ = 1.71069 Å, μ(MoKα) = 1.11 cm⁻¹. The structure was solved by direct methods. The parameters were refined by full matrix least squares technique to a final R = 0.088 for 834 reflections with ∥F₀∥ > 4σ(F₀). The dihedral angle between the least-squares plane through the pyrrolidine ring and that through the acetamide group is 90.4°. The N H … O hydrogen bonds connect molecules to form bands parallel to the z axis.     

Luminescent properties of europium (III) acetate monohydrate in synthetic opal pores

Abstract

This paper presents a systematic photoluminescence spectra study of the (111) growth surface of an opal photonic crystal whose pores were filled with salt Europium (III) acetate monohydrate (C₆H₉EuO₆×H₂O). Ultraviolet excitation was provided by semiconductor laser operating at wavelengths of 405?nm. Emission spectra were measured both for free-form salt samples and for salt in opal pores annealed at various temperatures up to 1000?°C. The influence of changes in the coordination environment of europium ions on the luminescence spectra in the process of dehydration and salt decomposition up to Eu₂O₃ is established. Differences in the spectra of salt in the pores of opal were revealed compared with the spectra in the free state.     

In‐situ investigation of the temperature dependent structural phase transition in CuInSe2 by synchrotron radiation

The temperature dependent structural phase transition from the tetragonal chalcopyrite like structure to the cubic sphalerite like structure in CuInSe₂ was investigated by in‐situ high temperature synchrotron radiation X‐ray diffraction. The data were collected in 1K steps during heating and cooling cycles (rate 38 K/h). The Rietveld analysis of the diffractograms led us to determine the temperature dependence of the lattice parameters, including the tetragonal deformation, |1‐η|, and distortion |u‐¼| (η=c/2a, a and c are the tetragonal lattice constant; u is the anion x‐coordinate). The thermal expansion coefficients α_a and α_c of the tetragonal lattice constant which are related to the linear thermal expansion coefficient α_L were obtained, as were α_a of the cubic lattice constant, also α_u and α_η. The transition temperature is clearly identified via a strong anomaly in α_L. The temperature dependence of the anion position parameter was found to be rather weak, nearly α_u∼0, whereas α_η increases slightly. However, both increase strongly when approaching to within 10 K of the transition temperature (the critical region) and |1‐η| as well as |u‐¼| go to zero with |T‐T_trans|^0.2 approaching the phase transition. The cation occupancy values, derived from the Rietveld analysis, remain constant below the critical region. Close to the transition temperature, the number of electrons at the Cu site increases with a dercrease in the number of electrons at the In site with increasing temperature, indicating a Cu‐In anti site occupancy, which is assumed to be the driving force of the phase transition. At the transition temperature 67% of Cu⁺ were found to occupy the Me1 site with a corresponding 67% of In³⁺ at the Me2 site. Although full disorder is reached with 50%, this level seems to be high enough that the phase transition takes place. The order parameter of the phase transition, goes with |T‐T_trans|^β to zero with the critical exponent β=0.35(7) which is in good agreement to the critical exponent β=0.332 calculated for order‐disorder transitions according to the Ising model. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical Characterization of Irradiation plus Annealing – induced VAsZnGa Pairs in p-type GaAs (Zn) Crystals

Effect of fast electron irradiation (E =2.2 Mev, ϕ_c = 1 × 10¹⁶ el/cm²) and subsequent annealings (T = 150 to 350 °C, t = 10 to 600 min) of zinc-doped p-type GaAs crystals on the formation and dissociation of V_AsZn_Ga, pairs is studied. An analysis of the formation and dissociation kinetics of V_AsZn_Ga pairs permitted to find the diffusion coefficient of radiation-induced arsenic vacancies D(D = 1.5 × 10⁻¹⁸, 1 × 10⁻¹⁷ and 5 × 10⁻¹⁷ cm²/s at 150, 175 and 200 °C accordingly), their migration energy ϵ_m(ϵ_m = 1.1 eV), the binding energy of V_AsZn_Ga, pairs ϵ_b(ϵ_b = 0.5 eV), and also their dissociation energy ϵ_d(ϵ_d = 1.6 eV).