Adsorption of cobalt phthalocyanine on a Si(1 0 0) surface with Bi-line structures as evaluated by scanning tunneling microscopy

We report the reaction dynamics of cobalt phthalocyanine (CoPc) molecules with Bi-line structures (BLSs) on a Si(1 0 0) surface, investigated using scanning tunneling microscopy (STM). When CoPc molecules were deposited on a Si(1 0 0) surface with BLSs at room temperature, single-spot protrusions were observed in the STM image instead of four-spot images corresponding to CoPcs flat molecular structure. Moreover, domains with a c(4 × 4) periodicity appeared on the terraces of the Si(1 0 0) surface. This indicates that CoPc molecules may have decomposed on the surface by catalytic reaction with Bi atoms.     

Imaging of ferroelectric vinylidene fluoride and trifluoroethylene copolymer films by scanning tunneling microscopy

In this paper, we reported the possibility to image non-conducting P(VDF-TrFE) copolymer films by STM. The films had the thickness of ∼25.0 nm and were spin-coated onto Au or graphite substrates. For films deposited on Au substrates, STM images showed grain structures of ∼100 nm, much larger than the grains of bare Au substrate. With increased scan rate, the film surface was damaged by STM tip and extreme protrusions and holes were observed. For films deposited on graphite substrates, we only obtained an image of very flat plane and could not observe the topography of the film surface. It seemed that the tip had pierced through the uppermost P(VDF-TrFE) layers and only imaged the layers nearest to the substrate. Asymmetrical current-voltage curves were observed from copolymer films deposited on HOPG. Experimental results were discussed.     

Morphology of pentacene films deposited on Cu(1 1 9) vicinal surface

We investigate the morphology of a pentacene (C₂₂H₁₄) film adsorbed on the Cu(1 1 9) vicinal surface by scanning tunnelling microscopy (STM). Thermal treatment of a thick film of molecules generates a long-range ordered structure. Series of molecular rows are alternated with areas where the molecules assume two equivalent orientations. STM data analysis suggests that the ordered structure can be described by a rippled morphology. The behaviour of the film at different annealing temperatures suggests a possible explanation of the film structure as due to an adsorbate-induced modification of the substrate.     

Si<Subscript>x</Subscript>Ge<Subscript>1-x</Subscript> ultrahigh-vacuum chemical vapor deposition on Si(111)(7×7) from GeH<Subscript>4</Subscript>/Si<Subscript>2</Subscript>H<Subscript>6</Subscript> mixtures

We report the results of a study on ultrahigh-vacuum chemical vapor deposition of Si_xGe_1-x layers on Si(111)(7×7) with GeH₄ and Si₂H₆ mixtures. Using combined scanning tunneling microscopy and X-ray photoelectron spectroscopy, structural properties, the growth kinetics and the composition of the deposited alloys are analyzed as a function of the growth temperature for two different GeH₄:Si₂H₆ mixture ratios. The mutual influence of the precursors is shown by comparing the structures formed during deposition and the sticking coefficients of Si₂H₆ and GeH₄ with results obtained from exposure of Si(111) to the pure gases. Received: 28 July 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-731/502-5452, E-mail: hubert.rauscher@chemie.uni-ulm.de     

Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy

Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the layers above them. Devices are also studied whilst powered to look at how the devices change during operation, with a numerical model that confirms the observed behavior. Whilst powered, low-doped blocking layers adjacent to the active region are found to change in real time, with dopant diffusion and the formation of surface states. A tunneling model which allows the inclusion of surface states and tip-induced band bending is applied to analyze the effects on the tunneling current, confirming that the doping concentration is reducing and defect surface states are being formed.     

Self-ordered monolayers of fullerene derivatives assembled via bimolecular building block

We reported the design and fabrication of a C₆₀ derivative with a uracil-like unit (U-C₆₀), to form a bi-molecular building block with a C₆₀ derivative with a 2,6-bis (acylamino) pyridine unit (DAP-C₆₀) by complementary trident hydrogen-bonding array. By pre-organizing these two fullerene derivatives in solution, bimolecular blocks were formed via robust and highly directional trident hydrogen-bonding recognition between DAP-C₆₀ and U-C₆₀. Then, the bimolecular blocks were deposited on highly ordered pyrolytic graphite (HOPG). The structure of the monolayer was characterized using a scanning tunneling microscope. Well-ordered monolayer composed of the two fullerene derivatives of DAP-C₆₀ and U-C₆₀ was observed and the structure of the monolayer was modeled.     

Transmission electron microscopy studies of HfO2 thin films grown by chloride-based atomic layer deposition

Detailed transmission electron microscopy characterization of HfO₂ films deposited on Si(1 0 0) using atomic layer deposition has been carried out. The influence of deposition temperature has been investigated. At 226 °C, a predominantly quasi-amorphous film containing large grains of cubic HfO₂ (a₀ = 5.08 Å) was formed. Grain morphology enabled the nucleation sites to be determined. Hot stage microscopy showed that both the cubic phase and the quasi-amorphous phase were very resistant to thermal modification up to 500 °C. These observations suggest that nucleation sites for the growth of the crystalline cubic phase form at the growing surface of the film, rather homogeneously within the film. The films grown at higher temperatures (300-750 °C) are crystalline and monoclinic. The principal effects of deposition temperature were on: grain size, which coarsens at the highest temperature; roughness with increases at the higher temperatures due to the prismatic faceting, and texture, with texturing being strongest at intermediate temperatures. Detailed interfacial characterization shows that interfacial layers of SiO₂ form at low and high temperatures. However, at intermediate temperatures, interfaces devoid of SiO₂ were formed.     

The structural formation of methylthiolate SAMs on Au(1 1 1) for short deposition times from solution

Scanning tunnelling microscopy was used to investigate the structural formation of methylthiolate self-assembled monolayers on Au(1 1 1). SAMs were prepared by exposing the gold crystal to an ethanol-dimethyldisulfide solution for immersion times of 12 min, 12 h, and 24 h. After preparation the formation of a () rect. striped phase was found. For this phase, the immersion time is the key parameter determining the size and number of ordered domains. Annealing induced a phase transition leading to large domains in a (3×4) structure. The annealing temperature determines whether a mixed phase of both structures or only the (3×4) structure are formed. We find no influence of the immersion time on the formation of the second structure. A structure model is presented for both phases on the basis on the same building block containing two methylthiolate molecules and a gold ad-atom.     

Investigation of heteroepitaxial diamond films by atomic force and scanning tunneling microscopy

We report on Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) investigations on chemical vapour deposited heteroepitaxial diamond films. Besides the good macroscopic crystal morphology a statistical tilt up to ±5.2° of the oriented crystallites has been found relative to the silicon substrates. By optimizing the process conditions, however, the crystal tilt of the films can be reduced, resulting in an improved film perfection. On crystallite (001)-surfaces a substructure of growth facets or islands has been found and high resolution STM images have established a 2×1 surface reconstruction on these growth facets. AFM and SEM were applied to study the morphology of diamond nuclei initially grown on the silicon substrate. Strong island like (Volmer-Weber) growth has been found, with a nucleus height to diameter ratio of 1:1. While the islands are growing in size with respect to time of nucleation, its aspect ratio does not change, due to the high surface free energy of the diamond relative to silicon.     

Self-organized semiconductor surfaces as templates for nanostructured magnetic thin films

Spontaneous pattern formation during epitaxial growth or ion erosion of semiconductor wafers offers an elegant route towards large-area nanostructured surfaces. In homoepitaxy, kinetics may result in rather uniform three-dimensional islands. In the case of semiconductor heteroepitaxy, strain relief leads to the formation of nanofaceted three-dimensional crystallites, which may self-organize into quasiperiodic arrays. By tuning substrate miscut and film thickness, or growing superlattices, a variety of patterns with different symmetries can be obtained, as will be summarized for the model system of SiGe on Si(001). Since these self-organized nanostructure arrays cover the entire wafer on which they are grown, they can serve as large-area nanopatterned substrates for subsequent deposition of magnetic thin films. It will be demonstrated that such templates allow the study of correlations between magnetic and chemical interfacial roughness, as well as the influence of pattern symmetry on the magnetic anisotropy of thin Co films. Furthermore, shadow deposition of magnetic material onto specially faceted nanostructure arrays allows the fabrication of nanomagnet arrays and the study of their magnetic properties. Received: 31 July 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-3842/402-760, E-mail: teichert@unileoben.ac.at     

Zinc oxide thin films prepared by means of Langmuir–Blodgett multilayers

Recieved: 7 April 1998/Accepted: 31 July 1998     

Fabrication and scanning tunneling microscopy studies of the Si(1 1 1)-(√31 × √31)-In surface

We report on the fabrication of single phase of the Si(1 1 1)-(√31 × √31)-In reconstruction surface, observed by scanning tunneling microscopy (STM) at room temperature. By depositing specific amounts of indium atoms while heating the Si(1 1 1)-(7 × 7) substrate at a critical temperature, the single phase of Si(1 1 1)-(√31 × √31)-In surfaces could be routinely obtained over the whole surface with large domains. This procedure is certified by our high-resolution STM images in the range of 5-700 nm. Besides, the high resolution STM images of the Si(1 1 1)-(√31 × √31)-In surface were also presented.     

Influences of the interfacial state between Co and a Si substrate on the magnetic properties of Co/Si(1 1 1) films

Morphology and magnetic properties of Co/Si(1 1 1) interfaces have been investigated using scanning tunneling microscope and surface magneto-optic Kerr effect techniques. As deposited at room temperature for Co/Si(1 1 1), defects have been observed with shapes of dark patches and bright islands on the surface with different Co coverage. The defect formation causes a rough interface. For subsequently deposited Co layers, the interfacial state between Co and the Si substrate results in the appearance of both the longitudinal and polar Kerr loops. After annealing treatments, interdiffusion of Co atoms and Si(1 1 1) substrate occurs as revealed by Auger electron spectroscopy. Scanning tunneling microscope images show the formation of Si clusters with average diameter of 10 nm at high temperatures. The disappearance of ferromagnetism of the films occurs due to the structural and compositional changes.     

Fatigue-free Pb(Zr0.52Ti0.48)O3 thin films on indium tin oxide coated substrates by a sol-gel process

Fatigue-free Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films were successfully prepared on indium tin oxide (ITO) coated glass substrates using the sol-gel method combined with a rapid thermal annealing process (RTA). The films post-annealed at a temperature of 700 °C for 2 min by RTA process formed (110)-oriented Pb(Zr_0.52Ti_0.48)O₃ thin films with pure perovskite structure, and had a good morphology as well. The good ferroelectricity of the prepared PZT films was confirmed by P–E hysteresis loop measurements. Fatigue characteristics showed stable behavior. Degradation in polarization was not found while the repeating cycles were up to 10¹¹, and a low leakage current density of 10⁻⁸ A/cm² was also obtained from the highly fatigue-resisted PZT thin films on ITO/glass substrates. Received: 19 October 1998 / Accepted: 29 March 1999 / Published online: 26 May 1999     

Complex surface reconstructions solved by ab initio molecular dynamics

Complex surface reconstructions and surface oxides, in particular, often exhibit complicated atomic arrangements, which are difficult to resolve with traditional experimental methods, such as low energy electron diffraction (LEED), surface X-ray diffraction (SXRD) or scanning tunnelling microscopy (STM) alone. Therefore, ab initio density functional calculations are used as a supplement to the experimental techniques, but even then the structural determination usually relies on a simple trial and error procedure, in which conceivable models are first constructed and then tested for their stability in ab initio calculations. An exhaustive search of the configuration space is usually difficult and requires a significant human effort. Solutions to this problem, such as simulated annealing, have long been known, but are usually considered to be too time-consuming in combination with first principles methods. In this work, we show that ab initio density functional codes are now sufficiently fast to perform extensive finite temperature molecular dynamics. The merits of this approach are exemplified for two cases, for a complex two-dimensional surface oxide on Pd(111), and for the oxygen induced c(6×2) reconstruction of V(110). Revised version: 15 July 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/4277-9514, E-mail: Georg.Kresse@univie.ac.at     

Observation of Si(1 0 0) surfaces annealed in hydrogen gas ambient by scanning tunneling microscopy

We investigated the cleaning process of Si(1 0 0) surfaces by annealing in H₂ gas ambient following chemical treatments by scanning tunneling microscopy. We observed the monohydride Si structure: Si(1 0 0):2 × 1-H on the surfaces annealed at 1000 °C in 2.5 × 10⁴ Pa H₂ gas ambient without conspicuous contaminants. On the sample annealed for 10 min or longer times, well-defined Si(1 0 0) structures with alternating S_A and S_B steps were observed, whereas the initial roughness still remained on the surfaces annealed for only 5 min.     

Influence of deposition conditions on the structural characteristics of sublimated CdTe thin films

In this paper the results obtained by X-ray diffraction studies on the structural characteristics of CdTe thin films deposited onto glass substrates by close-spaced sublimation technique are presented. Using different experimental arrangements and appropriate settings for growth parameters, the films with different polycrystalline structures were prepared. The geometry and the volume of the deposition chamber influence the size of film crystallites and also their preferential orientation. The role of deposition parameters such as the substrate temperature, the incidence angle, the film thickness, and the heat treatment in determination of the structural properties of the films are also investigated. Received: 26 November 1999 / Accepted: 7 January 2000 / Published online: 5 April 2000     

Growth and evolution of epitaxial erbium disilicide nanowires on Si (001)

Sub-monolayer amounts of Er deposited onto Si (001)react with the substrate to form epitaxial nanowires of crystalline ErSi₂. The growth of uniaxial structures occurs because the different crystal structures of ErSi₂ and Si have a good lattice match along one Si<110> crystallographic axis but a significant mismatch along the perpendicular Si<110> axis. The nucleation, growth, and subsequent evolution of ErSi₂ nanowires were investigated as functions of erbium coverage on the Si (001) surface, annealing time, and annealing temperature. Low annealing temperatures (620 °C) and times (5 min) produced ErSi₂ nanowires with widths of a few nanometers, heights less than one nanometer, and lengths of several hundred nanometers. For longer annealing times at low temperature, the surface roughened without significant ripening of the wires. Annealing at intermediate temperatures (∼700 °C) caused stacking faults to form along the long axis of the nanowires and their lengths to ripen. At high temperature (800 °C), the wires broke apart into short segments with stacking faults. Received: 30 January 2002 / Accepted: 31 January 2002 / Published online: 3 May 2002     

Oxidation of graphene on Ru(0 0 0 1) studied by scanning tunneling microscopy

The oxidation of graphene layer on Ru(0 0 0 1) has been investigated by means of scanning tunneling microscopy. Graphene overlayer can be formed by decomposing ethyne on Ru(0 0 0 1) at a temperature of about 1000 K. The lattice mismatch between the graphene overlayer and the substrate causes a moiré pattern with a superstructure in a periodicity of about 30 Å. The oxidation of graphene/Ru(0 0 0 1) was performed by exposure the sample to O₂ gas at 823 K. The results showed that, at the initial stage, the oxygen intercalation between the graphene and the Ru(0 0 0 1) substrate takes place at step edges, and extends on the lower steps. The oxygen intercalation decouples the graphene layer from the Ru(0 0 0 1) substrate. More oxygen intercalation yields wrinkled bumps on the graphene surface. The oxidation of graphene, or the removal of carbon atoms can be attributed to a process of the combination of the carbon atoms with atomic oxygen to form volatile reaction products. Finally, the Ru(0 0 0 1)-(2 × 1)O phase was observed after the graphene layer is fully removed by oxidation.     

Stress investigations of thin amorphous Ge-Se-Ga films

Thin chalcogenide films from the systems (GeSe₄)_1-xGa_x and (GeSe₅)_1-xGa_x with gallium contents up to 20 at. % have been prepared by vacuum evaporation and their stress has been investigated by a cantilever technique. The addition of gallium to the Ge-Se matrix plays an important role in stress formation in the films: films without gallium possess negligible stress, while all gallium-containing films are under compressive stress. The increase of the gallium content leads to structural changes and an increase in the density, which results in higher stress values. For all films, stress reduction with time is observed due to spontaneous relaxation. Received: 2 October 2002 / Accepted: 22 November 2002 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-561/8044-136, E-mail: popov@schottky.physik.uni-kassel.de