Si/SiO<Subscript>2</Subscript> superlattice based optical planar microcavity

Si/SiO₂ Fabry–Pérot microcavities with a silicon nanocrystal (Si-nc) active spacer have been realized using a novel process based on a reactive magnetron sputtering of a pure silica target. Spectral, spatial and temporal behaviours of the quantum dots confined inside the resonator are detailed. Compared with a reference sample, the spectral and spatial emission distributions are significantly narrowed and the forward emission intensity is enhanced. Time resolved photoluminescence measurements also revealed an increase of the spontaneous emission rate. PACS 42.70.Qs; 78.55.-m; 78.66.-w     

Optical studies of Si/SiO<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript> interfaces by second-harmonic generation spectroscopy of silicon interband transitions

Optical second-harmonic generation (SHG) studies of Si/SiO₂ interfaces by resonant two-photon excitation of Si interband transitions are reviewed. Three different types of interband resonances at Si interfaces are identified in SHG spectra: (i) E₁ and E₂ critical-point bulk interband transitions in the space-charge region of charged Si interfaces, (ii) E₁- and E₂-type transitions associated with Si atoms at the interface in bulk-like tetrahedral coordination, and (iii) transitions related to Si interface atoms with bonding properties specific of the atomic structure of the interface. The effects of the polarity of space-charge fields on SHG spectra of Si(100)/SiO₂ interfaces are also discussed. PACS 73.40.Qv; 73.20.-r; 42.65.Ky     

Influence of storage time on laser cleaning of SiO<Subscript>2</Subscript> on Si

The influence of the ‘storage time’ τ_s on the threshold fluence φ_cl and the efficiency in dry laser cleaning is investigated. τ_s denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (τ_FWHM=28 ns). For the 1500-nm silica spheres, φ_cl was found to increase from about 65 mJ/cm² to 125 mJ/cm² for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h. Received: 12 July 2002 / Accepted: 12 July 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail:dieter.baeurle@jku.at     

Laser-induced thermal effects on Si/SiO<Subscript>2</Subscript> free-standing superlattices

The thermal effects produced by continuous-wave laser radiation on free-standing Si/SiO₂ superlattices are studied. We compare two samples with different SiO₂ layer thicknesses (2 and 6 nm) and the same Si layer thickness (2 nm). The as-prepared free-standing superlattices contain some amount of Si nanocrystals (Si-nc). Intense laser irradiation at 488 nm of the as-prepared samples enhances the Raman scattering of Si-nc by two orders of magnitude. This laser-induced crystallization originates from melting of Si nanostructures in silica, which makes Si-nc better ordered and better isolated from the oxide surrounding. Continuous-wave laser control of Si-nc stress was achieved in these samples. In the proposed model, intense laser radiation melts Si-nc, and Si crystallization upon cooling down from the liquid phase in a silica matrix leads to compressive stress. The Si-nc stress can be tuned in the ∼3 GPa range using laser annealing below the Si melting temperature. The high laser-induced temperatures were verified with Raman spectroscopy. The laser-induced heat leads to a strongly nonlinear rise of light emission. The light emission is also observed in the anti-Stokes region, and its temperature dependence is practically the same for the two studied samples. The laser-induced temperature is essentially controlled by the absorbed laser power. PACS 78.55.-m; 78.20.-e; 68.55.-a; 78.30.-j     

Comparison between Si/SiO<Subscript>2</Subscript> and InP/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> based MOSFETs

The discrete breathers in graphane in thermodynamic equilibrium in the temperature range 50–600 K are studied by molecular dynamics simulation. A discrete breather is a hydrogen atom vibrating along the normal to a sheet of graphane at a high amplitude. As was found earlier, the lifetime of a discrete breather at zero temperature corresponds to several tens of thousands of vibrations. The effect of temperature on the decay time of discrete breathers and the probability of their detachment from a sheet of graphane are studied in this work. It is shown that closely spaced breathers can exchange energy with each other at zero temperature. The data obtained suggest that thermally activated discrete breathers can be involved in the dehydrogenation of graphane, which is important for hydrogen energetics.     

Si/SiO<Subscript>2</Subscript> core shell clusters probed by Raman spectroscopy

Using a pulsed microplasma source, clusters were produced through the ablation of a Si cathode and successive supersonic expansion. The Si cluster beam was deposited onto different substrates and the partial oxidation of the cluster surface avoided the growth of large agglomerates, preserving their nanocrystalline morphology. Micro-Raman spectroscopy was used for an accurate size diagnosis of the deposited nanoparticles. The size of the Si dots ranges between 2 and about 15 nm. The Si dots appear to have a Si oxide shell, as confirmed also by structural and compositional analysis through transmission electron microscopy and atomic force microscopy. Double Raman peaks were attributed to small Si agglomerates having a thin substoichiometric Si-O interface.     

Influence of the Si/SiO<Subscript>2</Subscript> interface on the charge carrier density of Si nanowires

The electrical properties of Si nanowires covered by a SiO₂ shell are influenced by the properties of the Si/SiO₂ interface. This interface can be characterized by the fixed oxide charge density Q_f and the interface trap level density D_it. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Q_f, D_it, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius a_crit. An analytic expression for a_crit is derived. PACS 68.65.-k; 61.46.+w; 81.10.Bk     

Theoretical studies on intervalley splittings in Si/SiO<Subscript>2</Subscript> quantum dot structures

Using the coupled cluster method we investigatespin-s J ₁-J′ ₂ Heisenberg antiferromagnets (HAFs) on an infinite, anisotropic, two-dimensional triangular lattice for the two cases where the spin quantum number s = 1 and s = $\frac{3} {2}$\frac{3} {2}. With respect to an underlying square-lattice geometry the model has antiferromagnetic (J ₁ > 0) bonds between nearest neighbours and competing (J′ ₂ > 0) bonds between next-nearest neighbours across only one of the diagonals of each square plaquette, the same diagonal in each square. In a topologically equivalent triangular-lattice geometry, the model has two types of nearest-neighbour bonds: namely the J′ ₂ ≡ κJ ₁ bonds along parallel chains and the J ₁ bonds producing an interchain coupling. The model thus interpolates between an isotropic HAF on the square lattice at one limit (κ = 0) and a set of decoupled chains at the other limit (κ → ∞), with the isotropic HAF on the triangular lattice in between at κ = 1. For both the spin-1 model and the spin-$\frac{3} {2}$\frac{3} {2} model we find a second-order type of quantum phase transition at κ _c = 0.615 ± 0.010 and κ _c = 0.575 ± 0.005 respectively, between a Néel antiferromagnetic state and a helically ordered state. In both cases the ground-state energy E and its first derivative dE/dκ are continuous at κ = κ _c , while the order parameter for the transition (viz., the average ground-state on-site magnetization) does not go to zero there on either side of the transition. The phase transition at κ = κ _c between the Néel antiferromagnetic phase and the helical phase for both the s = 1 and s = $\frac{3} {2}$\frac{3} {2} cases is analogous to that also observed in our previous work for the s = $\frac{1} {2}$\frac{1} {2} case at a value κ _c = 0.80 ± 0.01. However, for the higher spin values the transition appears to be of continuous (second-order) type, exactly as in the classical case, whereas for the s = $\frac{1} {2}$\frac{1} {2} case it appears to be weakly first-order in nature (although a second-order transition could not be ruled out entirely).     

Nanostructures of Si/SiO<Subscript>2</Subscript>/metal systems with tracks of fast heavy ions

Structures based on the SiO₂/n-Si and SiO₂/p-Si systems, with nanopores in silicon dioxide layers filled with Cu and Ni nanoparticles, have been prepared and investigated using the fast heavy ion technology, which includes irradiation with ¹⁹⁷Au²⁶⁺ ions, chemical etching of ion tracks, and subpotential electrochemical deposition. The selectivity of filling nanopores with metals and cluster character of their formation in tracks is shown.     

Impedance of Si/SiO<Subscript>2</Subscript> composites in the vicinity of the percolation threshold

The Si/SiO₂ composites, in which the concentration of the conducting silicon phase is close to the percolation threshold, have been prepared using the ceramic technology and studied at an alternating current. It has been found that an increase in the potential difference in a direct-current electric field leads to a decrease in the dispersion of time constants of dielectric spacers in the “Si grain-SiO₂ spacer-Si grain” structures forming a conducting cluster in the composite.     

Spectroscopy of the Tm:Sc<Subscript>2</Subscript>SiO<Subscript>5</Subscript> laser crystal in different orientations

Six absorption bands of Tm³⁺:Sc₂SiO₅ crystal have been investigated by decomposing each absorption band into a series of Lorentzian peaks. Polarized light of two polarizations was transmitted in three perpendicular directions through a crystal shaped as a parallelepiped with polished faces. The results are presented in the form of tables containing the parameters of the found Lorentzian peaks: central wavelength, width, and height.     

Features of the formation of silicon nanocrystals upon the annealing of SiO<Subscript>2</Subscript> layers implanted with Si ions

The effect of annealing on the ion-beam synthesis of silicon nanocrystals in Si layers was investigated by low-frequency Raman scattering (RS). The occurrence of crystal nuclei in a matrix of glass results in an additional contribution to density of the acoustic vibrational states associated with the surface vibrational modes of nanocrytals. The low-frequency RS caused by interaction of light with acoustic vibration modes of nanoparticles is an effective method of research. The low-frequency Raman spectra show that the samples do not have a smooth distribution of nanoparticle size, but have two specific sizes of nanoparticles, 3 and 6 nm.     

Photoconductivity of Si/Ge/SiO<Subscript>x</Subscript> and Si/Ge/Si structures with germanium quantum dots

A nonmonotonic dependence of the lateral photoconductivity (PC) on the interband light intensity is observed in Si/Ge/Si and Si/Ge/SiO_x structures with self-organized germanium quantum dots (QDs): in addition to a stepped increase in PC, a stepped decrease in PC is also observed. The effect of temperature and drive field on these features of the PC for both types of structures with a maximum nominal thickness of the Ge layer (N_Ge) is studied. The results obtained are discussed in the context of percolation theory for nonequilibrium carriers localized in different regions of the structure: electrons in the silicon matrix and holes in QDs.     

Features of high-power ion beam irradiation of nanoporous Si and SiO<Subscript>2</Subscript>

Nanoporous Si and SiO₂ melting observed under high-power ion beam irradiation of nanosecond duration was investigated. The sizes of ellipsoidal particles formed in Si and those of holes formed in SiO₂ under irradiation were determined. The possible origin of these morphology features was discussed.     

Structure of Ultrathin Polycrystalline Iron Films Grown on SiO<Subscript>2</Subscript>/Si(001)

The structure of polycrystalline Fe films grown on an oxidized Si(001) surface at room temperature has been studied by the technique of high-energy electron diffraction. It has been found that the grain orientation in the films depends of the amount of deposited iron. In Fe films less than 5 nm thick, grains have been found to be randomly oriented. Fe films more than 5 nm in thickness exhibit the (111) texture with an axis coinciding with the surface normal. The angular dispersion of the [111] direction in the Fe lattice from the surface normal is ±25°. It has been found that as the Fe films become thicker, the (111) texture changes to the (110) texture.     

Irradiation of amorphous Ta<Subscript>42</Subscript>Si<Subscript>13</Subscript>N<Subscript>45</Subscript> film with a femtosecond laser pulse

Films of 260 nm thickness, with atomic composition Ta₄₂Si₁₃N₄₅, on 4″ silicon wafers, have been irradiated in air with single laser pulses of 200 femtoseconds duration and 800 nm wave length. As sputter-deposited, the films are structurally amorphous. A laterally truncated Gaussian beam with a near-uniform fluence of ∼0.6 J/cm² incident normally on such a film ablates 23 nm of the film. Cross-sectional transmission electron micrographs show that the surface of the remaining film is smooth and flat on a long-range scale, but contains densely distributed sharp nanoprotrusions that sometimes surpass the height of the original surface. Dark field micrographs of the remaining material show no nanograins. Neither does glancing angle X-ray diffraction with a beam illuminating many diffraction spots. By all evidence, the remaining film remains amorphous after the pulsed femtosecond irradiation.     

Localization of an ultrathin buried Fe layer in a multilayer structure Nb/Fe/[Mo/Si]<Subscript>40</Subscript>/SiO<Subscript>2</Subscript> by means of X-ray standing waves

An analysis of the influence of standing waves on the angular dependencies of the fluorescent yield from an ultrathin iron layer buried inside a multilayer structure of Nb(50 nm)/Fe(3.9 nm)/[Si/Mo(6.77 nm)]₄₀/SiO₂ is presented. These angular dependencies of reflectivity and FeK _α-fluorescence yield were measured at the Station for high-precision X-ray optics (HPXO) of the Kurchatov Center for Synchrotron Radiation and Nanotechnology. The measured data was analyzed with the help of our FLUO software package. As a result of the complex treatment of reflectivity and Fe fluorescent yield data, the depth profile for iron atomic density was restored.     

Processing quartz glass by using the second harmonic of picosecond pulse Nd:YVO<Subscript>4</Subscript> laser

The processing of synthetic quartz glass by use of the second harmonic of a picosecond Nd:YVO₄ laser was examined. The threshold irradiation pulse energy density to process the glass using a picosecond pulse is about 3.8 J/(cm² pulse). The groove depth does not increase effectively by scanning with a single line even if the number of scans is increased. It becomes easy to process a thick material when the aperture is widened. A through hole (entrance side diameter 106 μm) was formed through a 0.3-mm-thick synthetic quartz glass plate without cracking by the use of circular scanning. The trepanning of a ring (outer diameter 3 mm, inner diameter 1 mm) from 0.3-mm synthetic quartz glass was achieved. PACS 52.38.Mf; 42.62.Cf; 81.05.Kf     

Fabrication of polaritonic structures in LiNbO<Subscript>3</Subscript> and LiTaO<Subscript>3</Subscript> using femtosecond laser machining

Fabrication of patterned materials in ferroelectric LiNbO₃ and LiTaO₃ crystals using femtosecond laser micromachining is presented and discussed. Damage feature sizes in the 10–100 μm range were achieved using 800-nm, 50-fs (FWHM) ultra-fast laser pulses with energies ranging from 10 μJ up to 350 μJ. Fabrication of polaritonic devices such as waveguides, resonators, focusing reflectors, diffractive and dispersive elements, photonic band gap materials, and other microstructures is demonstrated. PACS 77.84.Dy; 42.62.Cf; 71.36.+c     

Evolution of a femtosecond laser-induced plasma and energy transfer processes in a SiO<Subscript>2</Subscript> microvolume detected by the third harmonic generation technique

A nonlinear optical method has been proposed for probing the evolution of a plasma and energy transfer processes in the microvolume of a transparent dielectric using the third-harmonic probe signal. The electron self-trapping time has been estimated as t = 150 ± 80 fs. A decrease in the third-harmonic probe signal has been detected at the picosecond time scale; this decrease can be attributed to a change in the third-order susceptibility χ⁽³⁾ of a fused silica sample modified by laser radiation.