A novel optical diagnostic technique for analyzing the recrystallization characteristics of polycrystalline silicon thin films following frontside and backside excimer laser irradiation

Excimer laser annealing (ELA) is a widely used technique for producing polycrystalline silicon (poly-Si) thin films. An optical inspection system with simple optical arrangements for rapid measurement of recrystallization results of poly-Si thin films is developed in this study. The recrystallization results after both frontside ELA and backside ELA can be easily visible from the profile of peak power density distribution using the optical inspection system developed with an optimized moving velocity of 0.312 mm/s of the specimen. The method of backside ELA is suggested for batch production of low-temperature polycrystalline silicon thin-film transistors due to higher laser beam utilization efficiency and lower surface roughness of poly-Si films.     

Dynamical resolidification behavior of silicon thin films during frontside and backside excimer laser annealing

Excimer laser annealing (ELA) is frequently employed to fabricate low-temperature polycrystalline silicon films on glass substrate. The grain size and crystallinity of polycrystalline silicon films are significantly affected by the resolidification behavior during ELA. A real-time in situ time-resolved optical measurement system is developed to record the rapid phase transformation process during ELA. The average solidification velocity of liquid-Si is calculated from these optical spectra using MATLAB and Excel softwares. Field emission scanning electron microscopy images reveal maximum grain size of poly-Si films with a diameter of 1 μm, which is obtained in the complete melting regime of both frontside ELA and backside ELA. Recrystallization mechanisms of complete melting of Si thin films in frontside ELA and backside ELA are demonstrated. Resolidification scenarios of partial melting, near-complete melting and complete melting in frontside ELA and backside ELA are proposed.     

质子辐照下正照式和背照式图像传感器的单粒子瞬态效应

CMOS图像传感器应用于空间任务时容易受到质子单粒子效应影响.本文采用商用正照式(FSI)和背照式(BSI)CMOS图像传感器开展了不同能量的质子辐照实验,实验中通过在线测试方法分析质子单粒子效应.其中,质子能量最高为200 Me V,总注量为10¹⁰ particle/cm~2,结果未发现外围电路的单粒子效应,但观察到像素阵列出现不同形状的单粒子瞬态亮斑.通过提取瞬态亮斑沉积能量和尺寸大小两个特征参数,比较了不同能量质子对瞬态亮斑特征的影响,以及FSI和BSI中瞬态亮斑特征的差异.最后,结合仿真方法,与实验结果进行比较,预测了质子在CMOS图像传感器像素单元产生瞬态亮斑的能量沉积分布.仿真结果验证了光电二极管耗尽区厚度减小和外延层减薄是导致BSI图像传感器中质子能量沉积分布左移的主要因素.     

Evolution of microstructure in polycrystalline silicon thin films upon excimer laser crystallization

Polycrystalline silicon (poly-Si) films fabricated by pulsed excimer laser crystallization (ELC) have been investigated using time-resolved optical measurements, scanning-electron microscopy, and cross-sectional transmission-electron microscopy. Detailed crystallization mechanisms are proposed to interpret the microstructure evolution of poly-Si films for both frontside and backside ELC. It is found that the backside ELC is a good candidate for the manufacturing of low-temperature polycrystalline silicon because of the high laser efficiency and low surface roughness of the poly-Si films.     

Micro-Raman spectroscopy characterization of polycrystalline silicon films fabricated by excimer laser crystallization

The rapid recrystallization of amorphous silicon films utilizing excimer laser crystallization (ELC) is presented. The resulting poly-Si films are characterized by Raman spectroscopy. Polycrystalline silicon (poly-Si) films with higher crystallinity can be realized by a dehydrogenation process before ELC. Raman spectra as a function of various excimer laser energy densities are demonstrated. The crystallinity and residual stress of the poly-Si films are determined and discussed.     

Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation

The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH₃ for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si₂H₆ and NH₃ gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH₂ radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.     

Boron doping of silicon by excimer laser irradiation in a reactive atmosphere

UV excimer lasers have been used to dope semiconductors by a one-step process in which the laser serves both to melt a controlled thickness of a sample placed in dopant ambient and to photodissociate the dopant molecules themselves. Here we report the boron doping of silicon by means of an ArF (193 nm) excimer laser. Dopant atoms are obtained by photolysis of BCl₃ or pyrolysis of BF₃ molecules. The doping is performed both in gas ambient and using only an adsorbed layer. We have investigated the dependence of doping parameters such as laser pulse repetition and gas pressure on the subsequent boron impurity profiles and the dopant incorporation rate. These results indicate that the laser doping process is dopant-flux limited for BF₃ and externally rate limited for BCl₃.     

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi多晶硅 受激准分子激光器结晶 结晶化 界面晶粒生长polycrystalline silicon, excimer laser crystallization,Ni-disilicide, Ni-metal-induced lateral crystallization, two-interface grain growthProject supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).9/7/2005 12:00:00 AM3/6/2006 12:00:00 AMPolycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.     

A non-destructive optical diagnostic technique for measuring grain size of polycrystalline silicon produced by excimer laser crystallization

This work demonstrates a non-destructive optical diagnostic technique for determining grain size of polycrystalline silicon (poly-Si) and presents the result of melt-mediated phase transformation after excimer laser crystallization. The relationship between the average grain size of poly-Si films and transmissivity is investigated experimentally, which is found to coincide with the observation by field-emission scanning electron microscopy. This methodology can be used in association with a variety of non-destructive monitoring schemes.     

Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface

Spontaneous nanostructure formations on roughened and smooth silicon surface by the femtosecond laser irradiation with the repetition rate of 100 kHz were systematically studied. In addition to the widely accepted so-called coarse ripple, which has the period analogous to the wavelength of the laser beam and aligns perpendicularly to the electric field of the incident laser beam, the ripple which has the period similar to the wavelength of the incident laser beam but aligns parallel to the electric field of the laser beam was observed on the roughened surface for the lower fluence and the higher number of pulse irradiation. Furthermore, the ensemble of dots formed by the enhancement of the local electric field was found on the roughened surface. This structure is preferentially formed around the scratches aligned perpendicularly to the electric field of the laser beam. These novel nanostructures are considered to be peculiar to the femtosecond laser irradiation and open the possibilities for precise control of the spontaneous nanostructure formation by femtosecond laser irradiation.     

Multipulse irradiation of silicon by femtosecond laser pulses: Variation of surface morphology

The multipulse interaction of ultraviolet femtosecond laser pulses with silicon and generation of surface structures in a large area spot (?1 mm²) has been studied. The evolution of multiscale structures at the constant fluence strongly depends on the number of pulses, N. For N < 200, the “carpet-like” pattern of nano-, and micro-spikes is generated by the bubble explosion in a thin surface foam layer. The accumulation of bubbles and their explosion due to repetition of laser pulses cause damped membrane-like oscillations of the silicon surface. For 200 ≤ N, bifurcation of surface morphology takes place: (i) the surface tension waves of the wavelength ∼200 μm appear in the peripheral region of the spot. Generated by the surface thermal gradient in the liquid foam layer, they spread from the hot centerline towards the periphery of the spot. The change of their wavelength with propagation distance indicates onset of the Eckhaus instability caused by the phase modulation in multipulse interaction. (ii) Deep caverns appear in a highly superheated silicon layer in the central region of the spot due to the fast gas-liquid phase separation and the fragmentation process.     

Slip on the surface of silicon wafers under laser irradiation:Scale effect

The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.     

Dose and pressure dependence of silicon microstructure in SF6 gas due to excimer laser irradiation

ArF excimer laser radiation on Si surface at controlled SF₆ atmosphere creates a microstructure whose alteration at various UV doses and SF₆ pressures are investigated in this work. Moreover, a rigorous model has been presented here regarding the experiments based on the micro-fluid mechanical properties of molten silicon layer and the subsequent mechanical wave resonance due to the surface shallow fluid theory. The competitive thermal and non-thermal UV laser interaction with Si and the following heat transfer explains the creation of the self-assembled micro-pillars on Si surface.     

Morphological and structural effects of excimer laser treatment of amorphous silicon

The excimer laser irradiation of thin film amorphous silicon (a-Si) precursors on glass is a suitable method for obtaining high-performance polycrystalline silicon (p-Si) active layers for devices and circuits. By changing the experimental conditions, the recrystallization method generates a variety of microstructures that have direct impact on the material performance. An additional reason for microstructural characterization is introduced by the methods for spatially locating the recrystallization nuclei, used in more ergonomic concepts of device fabrication. Metal and SiO2 strip overlayers have been applied here, on a-Si to fix the position of the solidification seeds after laser melting. The control of many aspects of the thin film microstructure can be achieved with a collection of a few inspection techniques like AFM, SEM, EC contrast, TEM, X-ray diffraction (XRD), some of which require preliminary grain decoration treatment, and some do not. The results of different irradiation experiments, are herein illustrated, enlightened by the above characterization techniques, for providing information on surface morphology, grain arrangement, preferred orientation.     

Degradation of gallium arsenide under irradiation with an excimer laser

The results of a study of degradation of the surface of gallium arsenide resulting from irradiation with a power excimer laser at power densities ranging from the threshold power to the power level causing local melting of the surface are presented. Two degradation mechanisms have been identified, one of which causes the formation of a thin near-surface layer of modified nonstoichimetric gallium arsenide at a power level higher than 1×10⁷ W/cm² and the other of which causes the formation of a separate gallium phase. The formation of the separate gallium phase can be produced either by a single pulse of laser radiation with a power density exceeding 2.7×10¹¹ W/cm² or by a few less powerful pulses. An empirical relationship has been established between the power density and the number of pulses causing the formation of the separate gallium phase. It has also been established that as a result of laser irradiation at the boundary of “cold” and “hot” gallium arsenide, periodically ordered defects in the form of blocks aligned along the [100] directions emerge.     

Photochemical surface modification of PET by excimer UV lamp irradiation

UV irradiation has interesting potential for the photochemical modification of polymers. In order to study cross-linking effects and/or thin-layer deposition following a treatment in the presence of bi-functional media or in inert atmosphere, irradiation of PET in various atmospheres was performed using a KrCl excimer lamp. Surface properties were investigated by atomic force microscopy, nanoindentation, micro-thermal analysis, and X-ray photo-electron spectroscopy. The studies reveal that surface chemical composition, morphology, adhesion, thermomechanics, and stiffness/modulus are strongly affected by UV irradiation in the presence of bi-functional media. Films treated in octadiene and argon show an increase of surface modulus, much less expansion, and lower soft/melt temperatures, which is an indication of the surface cross-linking effect and a decrease of crystallinity within the near-surface layer. In the case of a diallylphthalate-treated film, depending on the local structure, either a strong decrease of melting temperature or no melting point is found, which is attributed to the irregular cross linking and thickness of the modified layer associated with a decrease of surface modulus. A significant increase of the alkali resistance is found after irradiation, as a result of both wetting and cross-linking effects on the polymer surface.     

Characterization of polycrystalline Ge thin films fabricated by short-pulse XeF excimer laser crystallization

XeF excimer laser-induced melting and recrystallization dynamics of amorphous germanium are investigated using time-resolved optical reflection and transmission measurements with a nanosecond time resolution, field-emission scanning electron microscopy, and micro-Raman spectroscopy. It is found that the disc-shaped grain with a diameter of approximately 0.8 μm is located in the complete melting regime with a melt phase duration of approximately 141–200 ns. The significant change of transmissivity is a key phenomenon revealing the excessive excimer laser fluence during excimer laser crystallization by in-situ optical measurements. Differences between the melting and recrystallization phenomenon for Si and Ge thin films are also discussed.     

Generation of multiply charged silicon and germanium ions by excimer laser pulses

Plasma bursts were produced by focusing excimer-laser (XeCl, 308 nm) pulses on Ge and Si targets. At moderate laser fluences (30 MW/cm²) high-intensity Ge³⁺ and Si³⁺ ion pulses were extracted from the laser-produced plasma. A peculiar electrical circuit allows a self-bunching of the beam. By time-of-flight method, the currents produced by the ions of different charge number were measured. Peak currents of 620 mA and 800 mA were recorded for Ge³⁺ and Si³⁺ ions, respectively, with an extraction voltage of only 400 V.