Fine pattern fabrication on SnO2:Sb thin films formed by the sol–gel process

The effects of UV irradiation on the properties of Sb⁵⁺ doped gel films were studied, which were prepared from stannic chloride (SnCl₄·5H₂O) and sodium alkoxide (NaOR) modified with benzytone (BzAcH). It was found that the absorption peak at around 335 nm due to the π → π* transition showed the formation of a chelate ring to Sn. The intensity of the absorption band decreased with UV light irradiation at 365 nm from a high‐pressure mercury lamp (250W). This finding showed that the SnO₂:Sb gel films modified with BzAcH were photosensitive to UV light. Additionally, this finding was applied to the fabrication of patterns on the SnO₂:Sb thin films. A gel film was irradiated through a mask and leached in water. Then a positive pattern was formed on the SnO₂:Sb thin films attached to the substrate. After heat treatment, the SnO₂:Sb gel films changed into transparent conductive films with an average conductivity of 1.20 × 10^?2Ω cm and with a transmission of 97.1%. Copyright © 2006 John Wiley & Sons, Ltd.     

Preparation and characterization of antimony-doped SnO2 thin films on gold and silver substrates for electrochemical and surface plasmon resonance studies

The paper reports on the deposition of thin antimony (Sb)-doped SnO₂ films onto gold and silver substrates using magnetron sputtering. The influence of the SnO₂:Sb film on the electrochemical and surface plasmon resonance properties is investigated. The best results in terms of stability, electrochemical and plasmonic characteristics are obtained for SnO₂:Sb of 8.5 nm thickness deposited on silver substrates.     

The effect of dopant’s valence (+III and +V) on the anion/cation uptake properties of antimony-doped tin dioxide

Antimony is perhaps the most frequently used doping element of tin dioxide. Although antimony of different oxidation states have been used in the synthesis, the effect of dopant’s valence on ion exchange properties has not been investigated critically. In our study the valence of antimony had clear effects on the metal uptake properties of Sb-doped SnO₂ materials. Extremely high Tc uptake (Kd > 100 000 mL g⁻¹) on Sb(III)-doped material was observed in conditions under which Sb(V)-doped material did not show any Tc uptake. However, the Sb(V)-doped material showed good Ni²⁺ uptake properties (Kd up to 33 000 mL g⁻¹), even at pH values below the material’s point of zero charge (pzc), while the Sb(III)-doped material showed Ni²⁺ uptake only at pH above its pzc. The cation uptake of Sb-doped SnO₂ resembles typical weakly acidic cation exchanger character but the uptake of TcO₄- does not follow a typical anion exchange pattern. Instead, we propose a sorption process related to redox reactions as the probable Tc uptake process.     

Characterization of Sb2O3 subjected to different ion and plasma surface treatments

This paper presents a study of Sb₂O₃ subjected to oxygen plasma and to ion beam bombardment (Ar⁺ and O₂⁺ ions of 4 keV) by x‐ray photoelectron and reflected electron energy‐loss spectroscopies. Changes in stoichiometry (i.e O/Sb ratio) and oxidation state of Sb have been detected and correlated with the chemical and ballistic effects of the beams used for alteration of the Sb₂O₃ surface. Thus, oxygen plasma treatments lead to a significant oxidation of the surface layers of this material with the formation of up to 51% Sb⁵⁺ species as found by Sb 4d curve‐fitting analysis. By contrast, O₂⁺ ion bombardment only produces a mild oxidation of the target with the formation of ～13% Sb⁵⁺ species. Argon ion bombardment induces a complex process where Sb⁵⁺ and Sb⁰ species are formed simultaneously. This result has been discussed in terms of a disproportionation reaction of the type Sb³⁺ → Sb⁵⁺ + Sb⁰. The changes in the electronic properties of the treated material are consistent with the loss upon oxidation to Sb⁵⁺ of the valence states associated to the 5s² electron pair of antimony. Approximate shapes of valence bands for Sb₂O₃ and Sb₂O₅ pure compounds have been extracted by applying factor analysis to valence band spectra of Sb₂O₃ subjected to different ion and plasma treatments. Copyright © 2003 John Wiley & Sons, Ltd.     

Quantification of antimony depth profiles in Sb-doped tin dioxide thin films

Sb-doped SnO₂ thin films, deposited by atomic layer epitaxy (ALE) for gas sensor applications, have been characterized by secondary ion mass spectrometry (SIMS). Quantification of the depth profile data has been carried out by preparing a series of ion implanted standards. Average concentrations determined by SIMS have been compared with Sb/Sn ratios obtained by X-ray fluorescence (XRF) spectrometry and proton induced X-ray emission (PIXE) spectrometry and have been found to be in good agreement. However, a detection limit of 5×10¹⁸ at cm^-3 could only be obtained because of mass interferences. SIMS data show that the ALE technique can be used to produce a controllable growth and doping of thin films.     

Observation of Sb2O3 Nanocrystals in SiO2 after Sb Ion Implantation

 Antimony nanocrystals were formed in thin SiO₂ films using low-energy ion implantation of Sb followed by annealing. Using Fourier transform laser microprobe mass spectrometry (FT LMMS), we observed for the first time the presence of antimony oxide in the intermediate phase (as-implanted layer of Sb) by means of signals referring to the intact Sb₂O₃ molecules. Only SbO⁺ fragments, but no adduct ions of Sb₂O₃ could be detected in annealed samples. The size and the distribution of the nanocrystals formed around the initial depth of implantation were studied in the as-implanted samples by high-resolution electron microscopy (HREM). The crystalline structure of these nanocrystals was also studied and the presence of antimony trioxide Sb₂O₃ in the form of valentinite was proven. After the annealing step, the implanted material had spread into a wider band. The method introduced here, based on combining TEM (transmission electron microscopy) and FT LMMS results, offers the possibility of studying the evolution of the phases in Sb nanocrystal formation.     

Optical,electrical, and electrochemical behavior of p-type nanostructured SnO<Subscript>2</Subscript>:Ni (NTO) thin films

The physical and electrochemical properties of sol-gel synthesized nickel-doped tin oxide (NTO) thin films were investigated. The X-ray diffraction results showed that NTO samples exhibited a tetragonal structure. The average crystallite size and the unit cell volume of the films were reduced by Ni increment, while the stacking fault probability was increased. Furthermore, the field-emission scanning electron microscopy images clearly displayed that the worm-like surface morphology of the SnO₂ thin films was altered to the spherical feature in 3 and 10 mol% NTO samples. Moreover, by virtue of Ni incorporation, the average transparency of the SnO₂ thin films rose up from 67 to 85% in the visible region; also, the optical band gap of the SnO₂ sample (3.97 eV) increased and the thin film with 3 mol% dopant concentration showed a maximum value of 4.22 eV. The blue/green emission intensities of photoluminescence spectra of SnO₂ thin film changed via Ni doping. The Hall effect measurements revealed that by Ni addition, the electrical conductivity of tin oxide thin films altered from n- to p-type and the carrier concentration of the films decreased due to the role of Ni²⁺ ions which act as electron acceptors in NTO films. In contrast, 20 mol% Ni-doped sample had the highest mobility about 9.65 cm² (V s)^?1. In addition, the cyclic voltammogram of NTO thin films in KOH electrolyte indicated the charge storage capacity and the surface total charge density of SnO₂ thin films enhanced via Ni doping. Moreover, the diffusion constant of the samples increased from 2?×?10^?15 to 6.5?×?10^?15 cm² s^?1 for undoped and 5 mol% dopant concentration. The electrochemical impedance spectroscopy of the NTO thin films in two different potentials showed the different electrochemical behaviors of n- and p-type thin films. It revealed that the 20 mol% NTO thin film had maximum charge transfer at lower applied potential.     

Synthesis,Characterization, and Singlet Oxygen Sensitization by Antimony (III/V) Corrole Complexes

The synthesis, structural, spectroscopic characterization, and DFT/TD-DFT calculations of antimony corroles are reported herein. The studied complexes can be described as [(Corr)Sb^III] and [(Corr)(oxo)Sb^V]₂, where Corr is the trianion of corrole. All these complexes are diamagnetic in nature as is evident from sharp peaks with normal chemical shifts in the ¹H NMR spectra. Single crystal XRD analysis reveals that the antimony(V) corrole complex is the bis-μ-oxo-bridged dinuclear antimony(V). Both the tetra and hexa-coordinated [(Corr)Sb^III] and [(Corr)(oxo)Sb^V]₂ antimony complexes adopt domed-structure with weak d-π electron coupling. The Sb−O bond distances in the co-facial dimer of [(Corr)(oxo)Sb^V]₂ are 1.9802(16) Å (DFT: 2.0141 Å ) (for Sb1−O1), and 1.9639(17) Å (DFT: 1.9957 Å ) (for Sb2−O2) respectively. We observed that even though iodosobenzene is frequently used to oxidize [(Corr)Sb^III] species, the oxidation of [(Corr)Sb^III] is indeed very facile in nature and it even occurred in the air-equilibrated CHCl₃ solution while storing for few days. Excitation of these antimony (III/V) corrole complexes in DCM/MeOH (1 : 1) at 77 K results in red emission with maxima at 640–720 nm. The singlet oxygen production of [(Corr)(oxo)Sb^V]₂ has a quantum yield of 69 % and is two times higher than the analogous [(Corr)Sb^III] derivatives.     

Study on antimony oxide self-assembled inside HZSM-5

Sb/ZSM-5 was obtained by solid-state reaction with the mixture of Sb₂O₃ and zeolite HZSM-5 under a dry nitrogen flow at 773 K. Characterization of the treated zeolite was undertaken with XRD, ²⁷Al MAS NMR, BET, TGA and FT-IR. The results revealed that part of the antimony oxides migrated into the channels of zeolite, and decreased the Brönsted acid sites in Sb/ZSM-5 remarkably. The other part of antimony oxides together with the amorphous alumino-silicate in the products distributed on the external surface of zeolite ZSM-5 and modified it, while the framework of ZSM-5 in crystal phase was retained. The structure of occluded antimony oxide inside the channels of ZSM-5 was studied by XRD Rietveld method. The result showed that their structure can be described as a chain of non-perfect [Sb₅O₅(H₂O)₂]_n⁵ⁿ⁺, which is parallel to the straight channel of ZSM-5. There is about 0.6 [Sb₅O₅(H₂O)₂]⁵⁺ unit in every cell of the ZSM-5 on an average.     

自掺杂型锑氧化物材料的制备、表征及其对Sr(Ⅱ)的吸附性能

⁹⁰Sr 是核电站放射性废液中需要重点去除的核素之一,水合锑氧化物Sb₂O₅·mH₂O可以在酸性条件下选择性吸附脱除⁹⁰Sr. 本文在以醇为溶剂的无水体系中,以化学性能较稳定且毒性低的SbCl₃为原料,以紫外线照射辅助双氧水氧化及控制水解两步法制备出自掺杂型锑氧化物Sb（Ⅲ）/Sb₂O₅. 文中采用X射线光电子能谱（XPS）、X射线衍射（XRD）和傅里叶变换红外（FTIR）光谱对材料结构进行结构表征,并采用批量实验方法研究不同Sb（Ⅲ）/Sb（total）比例与Sr（Ⅱ）吸附性能的相关性,以及溶液pH 值对Sr（Ⅱ）吸附性能的影响. 实验结果表明：Sb（Ⅲ）可在较大的比例范围内共存于立方烧绿石型Sb₂O₅晶格内,形成良好的固溶体Sb（Ⅲ）/Sb₂O₅;制备过程中通过控制醇溶剂的类型、氧化剂的添加方式以及两步反应温度,可以获得具有不同氧化率,即不同Sb（Ⅲ）/Sb（total）比例的Sb（Ⅲ）/Sb₂O₅材料;其中Sb（Ⅲ）/Sb（total）比例为49.8%的锑氧化物材料吸附性能最好,在纯水体系下对Sr（Ⅱ）的分配系数为6.6×107 mL·g^-1,在pH=3-13 范围内对Sr（Ⅱ）具有良好的吸附性能,并且在本文实验条件下,Sr（Ⅱ）在锑氧化物材料上的吸附更好地符合Langmuir吸附模型.     

Effect of Al doping on the conductivity type inversion and electro-optical properties of SnO2 thin films synthesized by sol-gel technique

Al doped SnO₂ thin films have been synthesized by a sol-gel dip coating technique with different percentages of Al on glass and silicon substrates. X-ray diffraction studies confirmed the proper phase formation in the films and atomic percentage of aluminium doping in the films was obtained by energy dispersive X-ray studies. SEM studies showed the particle sizes lying in the range 100–150 nm for the undoped films and it decreased with increase of Al doping. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region and the transparency increases with the increase of Al doping in the films. The direct allowed bandgap of the films have been measured for different Al concentration and they lie within the range of 3.87–4.21 eV. FTIR studies depicted the presence of Sn–O, Al–O, bonding within the films. The room temperature electrical conductivities of the films are obtained in the range of 0.21 S cm⁻¹ to 1.36 S cm⁻¹ for variation of Al doping in the films 2.31–18.56%. Room temperature Seebeck coefficients, S_RT of the films were found in the range +56.0 μVK⁻¹ to −23.3 μVK⁻¹ for variation of Al doping in the films 18.56–8.16%. It is observed that the Seebeck coefficient changes its sign at 12.05% of Al in the films indicating that below 12.05% of Al doping, SnO₂:Al behaves as an n-type material and above this percentage it is a p-type material.     

Achieving Near-unity Photoluminescence Quantum Yields in Organic-Inorganic Hybrid Antimony (III) Chlorides with the [SbCl5] Geometry

Hybrid organic–inorganic antimony halides have attracted increasing attention due to the non-toxicity, stability, and high photoluminescence quantum yield (PLQY). To shed light on the structural factors that contribute to the high PLQY, five pairs of antimony halides with general formula A₂SbCl₅ and A₂Sb₂Cl₈ are synthesized via two distinct methods and characterized. The A₂SbCl₅ type adopts square pyramidal [SbCl₅] geometry with near-unity PLQY, while the A₂Sb₂Cl₈ adopts seesaw dimmer [Sb₂Cl₈] geometry with PLQY≈0 %. Through combined data analysis with the literature, we have found that A₂SbCl₅ series with square pyramidal geometry generally has much longer Sb⋅⋅⋅Sb distances, leading to more expressed lone pairs of Sb^III. Additional factors including Sb−Cl distance and stability of antimony chlorides may also affect PLQY. Our targeted synthesis and correlated insights provide efficient tools to precisely form highly emissive materials for optoelectronic applications.     

New materials synthesis: Characterization of some metal-doped antimony oxides

In order to understand the chemistry of altermetal dopants in antimony oxide, the detailed structural characterization of two β-Sb₂O₄ compounds is reported, Mo-doped β-Sb₂O₄ (1.5 metal%) and V-doped β-Sb₂O₄ (5 metal%). The methods used to characterize these materials are X-ray and neutron diffraction, scanning electron microscopy, Mo K-edge extended X-ray absorption fine structure spectroscopy, and elemental analysis. The atomic position of each of these dopants in Sb₂O₄ is radically different as is the overall effect on the host structure. Molybdenum does not substitute for Sb atoms, rather the Mo atoms are found in channels of electron density formed by Sb³⁺ lone pairs. The two nearest Sb³⁺ are absent and the oxygen stoichiometry is preserved. The formula is Sb_1.97Mo_0.015O₄. Vanadium incorporates substitutionally for the Sb³⁺ atoms and there are random oxygen vacancies in the resultant structure. The formula is Sb_1.9V_0.1O_3.67. In each case the atomic positions of the host structure (Sb and O) are remarkably unaltered. The β-Sb₂O₄ structure can accommodate Mo and V simultaneously, presumably both means of metal incorporation are employed in this ternary oxide.     

Determination of trivalent antimony

Summary A method is described for the determination of trivalent antimony. It depends on the oxidation of Sb³⁺ to Sb⁺ with KMnO₄ in sulfuric acid solutions (0.72-3.4N H₂SO₄) in the presence of fluoride ions and at temperatures below 50°. Amounts of antimony ranging from 15.7gmg to 61 mg can be determined accurately.

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Zusammenfassung Eine Methode zur Bestimmung von Sb (III) wurde beschrieben. Sie beruht auf der Oxydation zu Sb(V) mit Permanganat in schwefelsaurer Lösung (0,72-3,4N H₂SO₄) in Gegenwart von Fluorid bei Temperaturen unter 50° C. Mengen zwischen 15,7gmg und 61 mg Antimon lassen sich genau bestimmen.

     

Influence of F‐ doping on the microstructure,surface morphology and electrochemical properties of the lead dioxide electrode

The lead dioxide electrode (PbO₂) with Ti substrate and SnO₂‐Sb₂O₅ intermediate layer was doped by F^‐ ion through the potentiostatic anode co‐deposition method. The content of F in the coating can be controlled by adjusting deposition potential. The effect of F^‐ doping on the composition, surface morphology and electrochemical properties of the PbO₂ electrode was characterized by X‐ray diffraction, scanning electron microscope, X‐ray photoelectron spectroscopy and electrochemical measurement methods. The results have confirmed that the content of β‐PbO₂ increases with increasing that of F, and the doping can make the β‐PbO₂ grains become fine and the electrode surface become smooth; the specific surface areas and conductivity increase, and the initial potential of oxygen evolution shifts toward positive direction compared with the free‐doped PbO₂ electrode; the oxygen evolution potential increases with the increasing of the F^‐content in the PbO₂ film electrode. The bulk electrolysis result demonstrated that the performances of the F‐PbO₂ electrode for anodic oxidation aniline have been improved to some extent. Copyright © 2012 John Wiley & Sons, Ltd.     

Sb掺杂ZnSnO3透明导电薄膜：制备与性能

采用溶胶-凝胶法（Sol-Gel）和旋涂法制备了未掺杂的ZnSnO₃薄膜和掺入不同物质的量的Sb的ZnSnO₃薄膜。采用X射线衍射（XRD）、场发射扫描电镜（FE-SEM）、X射线光电子能谱（XPS）、霍尔效应仪（Hall）以及紫外-可见光（UV-Vis）等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明：所有薄膜都是ZnSnO₃结构;与未掺Sb的ZnSnO₃薄膜相比,掺入Sb后的ZnSnO₃薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明：Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光（UV-Vis）表明：在波长大于475nm的可见光范围内,掺入Sb的ZnSnO₃薄膜的可见光透过率都在80%以上。     

Sb掺杂ZnSnO_3透明导电薄膜:制备与性能(英文)

采用溶胶-凝胶法(Sol-Gel)和旋涂法制备了未掺杂的ZnSnO3薄膜和掺入不同物质的量的Sb的ZnSnO3薄膜。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、X射线光电子能谱(XPS)、霍尔效应仪(Hall)以及紫外-可见光(UV-Vis)等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明:所有薄膜都是ZnSnO3结构;与未掺Sb的ZnSnO3薄膜相比,掺入Sb后的ZnSnO3薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明:Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光(UV-Vis)表明:在波长大于475 nm的可见光范围内,掺入Sb的ZnSnO3薄膜的可见光透过率都在80%以上。     

All‐Inorganic Lead‐Free 0D Perovskites by a Doping Strategy to Achieve a PLQY Boost from <2 % to 90 %

Zero‐dimensional (0D) lead‐free perovskites have unique structures and optoelectronic properties. Undoped and Sb‐doped all inorganic, lead‐free, 0D perovskite single crystals A₂InCl₅(H₂O) (A=Rb, Cs) are presented that exhibit greatly enhanced yellow emission. To study the effect of coordination H₂O, Sb‐doped A₃InCl₆ (A=Rb, Cs) are also synthesized and further studied. The photoluminescence (PL) color changes from yellow to green emission. Interestingly, the photoluminescence quantum yield (PLQY) realizes a great boost from <2 % to 85–95 % through doping Sb³⁺. We further explore the effect of Sb³⁺ dopants and the origin of bright emission by ultrafast transient absorption techniques. Furthermore, Sb‐doped 0D rubidium indium chloride perovskites show excellent stability. These findings not only provide a way to design a set of new high‐performance 0D lead‐free perovskites, but also reveal the relationship between structure and PL properties.     

Synthesis and Crystal Structures of New Antimony Polysulfido Complexes: [P(C6H5)4]3Sb3S25 and [P(C6H5)4]2Sb2S15 · 2(C3N2H6)

Reaction of elemental antimony with sulfur under mild hydrothermal conditions yielded different polysulfido-clusters of antimony. These were isolated as tetraphenylphosphonium salts [P(C₆H₅)₄]₃Sb₃S₂₅ and [P(C₆H₅)₄]₂Sb₂S₁₅ · 2(C₃N₂H₆) and their crystal structures were determined. In the first compound two different polysulfide anions are observed, Sb₂S₁₇^2– and Sb₂S₁₆^2–, whereas the second contains the Sb₂S₁₅^2– complex. These dinuclear anions show as a common building principle two ψ-trigonal bipyramidal coordinated Sb centers bridged by two S_x^2– units and an additional S_x^2– chelate ligand bound to each Sb center giving a tricyclic structure.