LD泵浦Nd:YVO4/KTP/BBO紫外激光器

本文报道在国内首次实现的LD泵浦的四倍频连续紫外激光器的实验结果.首先研究了LD泵浦的Nd:YVO₄激光器,在普通平-平腔结构下,得到斜效率55.68%,激光输出波长1064nm;利用KTP作为倍频晶体,实现腔内倍频,在泵浦功率11.85W时得到绿光(532nm)输出1.35W,光-光转换效率11%;用BBO晶体进行外腔谐振倍频,得到紫外光(266nm)输出.     

LD抽运的Nd:YAG陶瓷/KTP绿光激光器

报道了一种LD端面抽运Nd:YAG陶瓷、KTP腔内倍频的全固态连续波绿光激光器.当抽运功率为21.6 W时,1064 nm基频输出达到11.3 W,光—光转换效率为52.3%.采用Ⅱ类切割的KTP晶体作为腔内倍频介质,在直腔结构下获得了最大功率为1.86 W的532　nm绿光输出,光—光转换效率为7%.输出光斑具有高斯型强度分布,1 W输出时的M²因子约为1.7. 关键词： 全固态绿光激光器 Nd:YAG陶瓷 KTP倍频 直腔     

LD抽运Nd:Gd1-xYxVO4连续波激光器的实验研究

报道了一种半导体二极管(LD)抽运Nd:Gd1-xYxVO4晶体,采用简单、结构紧凑的平-平腔设计,实现了1.06 μm连续波激光输出,在8 W的注入功率下,获得3.25 W的1.06 μm连续波激光输出,光-光转换效率为41%,斜效率为45%.KTP腔内倍频实现了稳定的连续波532 nm绿光激光运转,当注入功率为8 W时,单向获得了621 mW的单模绿光输出.     

LD泵浦Nd：YAG/Cr：YAG腔外频率变换高功率紫外激光器

用KTP晶体对激光二极管端面泵浦的Nd:YAG晶体;Cr:YAG被动调Q产生的1064nm脉冲激光器进行腔外倍频,用BBO晶体四倍频产生266 nm紫外激光.用15 W的LD阵列;当LD泵浦功率为12 W的情况下;红外(1064 μm)调Q平均输出功率为2.2 W;脉冲序列周期为40 μs;脉宽为18ns;峰值功率高达4.9kW.采用KTP腔外二倍频;532nm的绿光输出平均功率为850mW;用BBO腔外四倍频;266nm的紫外光输出平均功率高达215mW，绿光-紫外光光转换效率为25.2%, 红外到紫外总的转换效率为9.8%.     

LD泵浦Nd∶YAG/Cr∶YAG腔外频率变换高功率紫外激光器

用KTP晶体对激光二极管端面泵浦的Nd∶YAG晶体,Cr∶YAG被动调Q产生的1064 nm脉冲激光器进行腔外倍频,用BBO晶体四倍频产生266 nm紫外激光.用15 W的LD阵列,当LD泵浦功率为12 W的情况下,红外(1064μm)调Q平均输出功率为2.2 W,脉冲序列周期为40μs,脉宽为18 ns,峰值功率高达4.9 kW.采用KTP腔外二倍频,532 nm的绿光输出平均功率为850 mW;用BBO腔外四倍频,266 nm的紫外光输出平均功率高达215 mW,绿光-紫外光光转换效率为25.2%,红外到紫外总的转换效率为9.8%.     

高稳定LD泵浦腔内倍频Nd∶YVO4/KTP连续绿光激光器

设计出一种能够较好地补偿激光晶体热效应的激光谐振腔，实现了高稳定LD单端泵浦KTP腔内倍频Nd∶YVO₄连续绿光激光器.当晶体吸收的泵浦功率为24.56 W时，532 nm激光功率达到5.3 W，光-光转换效率达到21.6％，激光模式为TEM00模.在输出功率5W左右时，激光器1 h功率不稳定度优于0.6％     

基于Nd∶YAG/Cr∶YAG复合晶体的全固态紫外激光器

被动调Q产生1064 nm脉冲激光在腔外聚焦后入射到KTP中,产生532 nm的倍频光,再通过LBO和频产生355 nm激光。当抽运功率为3.4 W时,基频光调Q输出平均功率为350 mW,峰值功率达3.5 kW。腔外二倍频532 nm绿光输出平均功率为110 mW,用Ⅰ类相位匹配LBO晶体和频获得36 mW的355 nm的紫外激光输出,三倍频效率(1064~355 nm)达到10.2%。由于Cr∶YAG晶体达到饱和吸收后,会呈现出各向异性的特征,对基频光的偏振状态有很大影响。实验中必须合理放置复合晶体,使基频光的偏振状态为近似线偏振以提高转换效率。     

基于Nd:YAG/Cr:YAG/YAG键合晶体LD侧面泵浦激光器

利用Nd∶YAG/Cr∶YAG/YAG键合晶体,建立了具有高平均输出功率的LD侧面泵浦被动调Q激光器系统.当Cr∶YAG的初始透过率为85%、最大泵浦光功率为187.5 W时,1 064nm激光的平均输出功率为83.68W.通过KTP晶体进行倍频,在最大泵浦光功率下,产生了27.2W532nm绿光激光脉冲,同时脉冲宽度和重复频率分别为210ns和21.2kHz;绿光单脉冲能量和峰值功率分别为1.28mJ和6.1kW;泵浦光(808nm)到倍频光(532nm)的光-光效率为14.5%.     

用于飞秒紫外激光产生的LD泵浦高效Nd:YVO4绿光激光器研究

利用简单的折叠腔,腔内不含任何其它附加光学元件,LD双端泵浦Nd:YVO₄,KTP腔内倍频绿光激光器实现了低阈值、高效率的TEM₀₀模稳定激光输出.最高绿光输出功率可达到3.3W,光-光转换效率为16.2%.     

激光二极管抽运Nd：YVO4／LBO腔内倍频5．3W连续波激光器

报道了激光二极管双向抽运Nd:YVO4晶体,LBO腔内倍频,最大输出功率为5．3W的连续波绿光激光器,采用LBO晶体Ⅰ类非临界相位匹配（NCPM）,温度调谐,当抽运光功率为20W时,获得了5．3W TEM00模532nm绿光输出,光－光转换效率达26．5％,并对绿光模式及输出功率随LBO晶体温度的变化关系进行了测量,与理论结果符合较好。     

Vector Coherent State Representations of SO5 SU2 SU2 U1 U1 and SO5 U1 U1

VCS representantions of SO₅ SU₂ SU₂ U₁ U₁ and SO₅ U₁ U₁ are discussed.Reduced matrix elements for SO₅ SU₂ SU₂ are derived.The multiplicity of a weight for SO₅ is determined by using the K-matrix technique.     

S2分子光谱特性及其应用

基于对海洋进行快速大面积探测或对潜通讯的需要．开始了对S₂分子激光器的研制。S₂分子激光器与其它几种激光器相比具有明显的优势．介绍了S₂分子的获得方式、S₂分子的势能曲线及特点、S₂分子光谱特性等。经过反复论证及试验，取得了阶段性研究成果，为横向脉冲快放电小型S₂分子激光器的研制及实现激光振荡奠定了坚实的基础。     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

Vector Coherent State Representations of SU3 in U1 U1 Basis

In this paper,Vector Coherent State (VCS) representations of SU₃ in U₁ U₁ basis are discussed.Orthonormal basis vectors for SU₃ U₁ U₁ are derived and the multiplicity of a weight for SU₃ U₁ U₁ is determined by using K-matrix technique.     

A Two-Parameter Deformed Two-Dimensional Interacting Boson Model With Uqp(U3)Uqp(U2)Uqp(SO2) Symmetry

A two-parameter deformed two-dimensional interacting boson model with U_qp(U₃) U_qp(U₂) U_qp(SO₂)symmetry is constructed.It is found that the energy spectrum and transition matrix elements depend very sensitively on the second parameter of deformation.     

CdGd2(WO2)4单晶的顺磁共振谱研究

通过粉末XRD测定了CdGd₂(WO₂)₄单晶的晶格常数,由σ- T和ESR实验得出晶体具有顺磁性,但又具有磁各向异性,探讨了晶体的磁各向异性与晶体结构的关系,计算了各向异性g²张量,所得结果和实验符合甚好.      

Mixing between the 23S1 and 13D1 Ds

Mixing between the 2³S₁ and 1³D₁ D_s is studied within the ³P₀ model. If mixing between these two 1^- states exists, D_s1^*(2700)^± and D_sJ^*(2860)^± could be interpreted as the two orthogonal mixed states with mixing angle θ≈ -80° in the case of a special β for each meson. However, in the case of a universal β for all mesons, D_s1^*(2700)^± could be interpreted as the mixed state of 2³S₁ and 1³D₁ with mixing angle 12° < θ < 21° but D_sJ^*(2860)^± seems difficult to interpret as the orthogonal partner of D_s1^*(2700)^±.     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

大功率TEA CO2激光系统的电磁兼容设计

大功率TEA CO2激光系统工作时产生的强电磁干扰主要来源于激光主放电回路、脉冲火花开关和电源。这种强电磁脉冲干扰对激光系统内部及相关外部设备的电子系统具有很大的干扰和破坏作用。对大功率TEA CO2激光系统的电磁干扰进行了分析计算,在此基础上对大功率TEA CO2激光系统进行了EMC设计。硬件设计手段分别采用了对电磁干扰源和控制子系统进行屏蔽、系统合理布局与布线、滤波隔离,软件采用了数据冗余纠错、冗余化操作和数据鉴别等抑噪和纠错技术,有效地抑制了干扰电磁波在系统内外的传播,解决了大功率TEA CO2激光系统EMC问题。结果表明,对电磁干扰源和控制子系统进行屏蔽,系统合理布局与布线、滤波隔离等措施,是抑制电磁干扰,保证激光控制子系统硬件不受损坏的主要手段。软件抗干扰,是硬件抑制电磁干扰措施的补充和延伸,能使激光系统具有很高的可靠性。