L-半胱氨酸修饰的ZnS∶Co/ZnS量子点的合成及表征

选用L-半胱氨酸作为修饰剂,采用共沉淀法在水溶液中合成了ZnS∶ Co/ZnS量子点.通过X-射线粉末衍射(XRD)、透射电镜(TEM)、红外光谱(IR)、紫外可见光谱(UV-Vis)和荧光光谱(PL)对量子点的结构、形貌、组成及光谱性质进行表征.结果表明:ZnS∶ Co/ZnS量子点为立方闪锌矿结构,颗粒呈球形,分散性好,颗粒尺寸约为3.3nm1;随着ZnS壳层增厚,ZnS∶ Co/ZnS量子点的荧光发射峰强度先增大后减小,核壳比为1∶0.15时发光强度达到最大.Co2+的掺杂和ZnS壳层的形成使量子点的荧光量子产率从2.4;增加到9.8;.L-半胱氨酸分子通过其巯基与量子点表面的金属离子配位,从而修饰在量子点的表面,使该量子点具有水溶性、生物相容性和生物可偶联性.     

长寿命水溶性CdS/ZnS核-壳量子点的合成及表征

以一锅法合成的CdS量子点为核心,采用单源分子前驱体法成功制备了高质量的油溶性CdS/ZnS核-壳量子点,量子点荧光量子产率高达43.7;,荧光寿命为306 ns.进一步用谷胱甘肽作为相转移剂,将油溶性CdS/ZnS量子点成功转入水相.采用紫外-可见吸收光谱(UV-vis)、荧光光谱(PL)、时间分辨荧光光谱(TRF)、透射电镜(TEM)和X-射线粉末衍射(XRD)对量子点的光谱性质和形貌、结构进行表征.结果表明:谷胱甘肽修饰的量子点水溶性好,粒径均匀,分散性良好,荧光量子产率高,荧光寿命长,显示了较好的生物分析应用前景.     

Ag/ZnS核壳结构纳米棒的制备及其光催化性能分析

在制备的Ag纳米线的基础上,用水热法合成了Ag/ZnS核壳结构纳米棒.使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、X射线能谱仪(EDS)、高分辨透射电子显微镜(HRTEM)、紫外-可见双光束分光光度计(UV-vis)、光致发光扫描仪(PL)等检测设备对样品的成分、形貌、微结构及光学性能进行了表征.结果显示,制备的Ag/ZnS复合材料为ZnS纳米颗粒包覆Ag纳米线的核壳结构,其紫外吸收峰位于350 nm处,相对于ZnS纳米颗粒变宽并发生红移,PL发射峰位于462 nm处,相对于ZnS纳米颗粒发生了蓝移,强度明显降低.光催化结果显示,Ag/ZnS核壳结构纳米棒的光催化性能优于ZnS纳米颗粒,分析了光催化反应机理.     

直接合成法制备CdSe@SiO2荧光纳米材料

以3-巯基丙基三甲氧基硅烷(MPS)为修饰剂,直接法制备得到闪锌矿结构的CdSe@SiO2核-壳型量子点,该方法简化了制备硅烷化核-壳型量子点的流程,缩短了制备的时间.用荧光分光光度计,透射电子显微镜,X射线粉末衍射仪等分析测试方法对得到的核-壳型核-壳型量子点的性能进行表征.结果表明:n(Cd2+):n(SeSO2-3)和反应体系Ph值,对纳米晶的光学性质具有显著影响.在最佳合成条件下得到的CdTe@SiO2纳米粒子的平均粒径约为20nm,其大小均匀.与CdSe纳米粒子相比,CdSe@SiO2核-壳型量子点光化学性能较稳定,常温下可以放置半年以上.SiO2包覆的CdSe纳米粒子有效地提高了核-壳型量子点的稳定性,大大增强了其抗光漂白性能.     

反相微乳液法制备CdS/ZnS纳米晶及其表征

用反相微乳液法制备了CdS纳米粒子,以ZnS对其表面进行包裹,得到了核壳结构的CdS/ZnS纳米晶.采用X射线衍射(XRD)、透射电镜(TEM)表征其结构、粒度和形貌,紫外-可见吸收光谱(UV-VIS)、光致发光光谱(PL)表征其光学特性.制得的CdS纳米微粒近似呈球形,直径约3.6nm;包裹以后颗粒仍为球形,粒径约10nm,以XRD、UV-VIS和PL证实了CdS/ZnS核壳结构的实现.文章还研究了不同Zn/Cd的摩尔比对CdS/ZnS纳米微粒光学性能的影响,UV-VIS谱表明随着壳层厚度的增加CdS/ZnS纳米晶的吸收带边有轻微的红移;PL谱表明壳层ZnS的包覆可减少CdS纳米微粒的表面缺陷,带边直接复合发光几率增大,且具有合适的壳层厚度时,CdS核层的发光效率有较大提高.     

水溶性ZnS∶Ni量子点的合成及荧光性质

以L-半胱氨酸为修饰剂,采用化学共沉淀法在水溶液中合成了ZnS∶Ni量子点.通过X-射线粉末衍射(XRD)、透射电镜(TEM)、红外光谱(IR)和荧光光谱(PL)对量子点的结构、组成、形貌及光谱性质进行表征.结果表明:ZnS∶ Ni量子点为立方闪锌矿结构,颗粒呈球形,平均尺寸约为2.9 nm,分散性良好;随着Ni2掺杂浓度的增加,ZnS∶ Ni量子点的荧光发射强度先增强后减弱,当Ni2+掺杂浓度为0.7;时,发射强度达到最大.经室内自然光照后,ZnS∶ Ni量子点的荧光量子产率可达15.4;.修饰在量子点表面的L-半胱氨酸使该量子点具有良好的水溶性、生物相容性和生物大分子可偶联性.     

微乳液法制备不同形貌低维硒化锌纳米晶

利用微乳液法,实现了多晶硒化锌纳米空心球、单晶硒化锌纳米棒以及ZnSe量子点的低温合成.通过调整Triton X-100/环己烷/水体系中表面活性剂Triton X-100的浓度分别制备出直径在120 nm左右,壁厚在6nm左右的ZnSe多晶纳米空心球体、长度达1μm的单晶纳米棒和直径位于4～6nm的ZnSe量子点.紫外可见吸收光谱显示不同形貌ZnSe纳米结构的吸收特征具有较大的差别.     

水热法合成Cu-In-Zn-S量子点及其荧光性能研究

通过水热法制备了Cu-In-Zn-S (CIZS)四元量子点,采用X射线衍射仪(XRD)、能谱仪(EDS)、透射电子显微镜(TEM)、荧光分光光度计(PL)研究了不同反应温度和Cu/In摩尔比对CIZS量子点的物相组成、显微形貌以及荧光性能的影响,同时利用傅里叶变换红外光谱仪(FT-IR)对CIZS量子点的表面性质进行表征.结果 表明,量子点颗粒在水溶液中呈类球型并且具有良好的分散性,粒径大小为3～4 nm.合成的CIZS量子点具有优异的荧光性能,随着反应温度的升高,量子点的荧光强度逐渐增强;当反应温度为110℃时,量子点的荧光强度最高;然而,过高的反应温度造成了In2S3杂质相的形成,荧光强度随之降低.此外,随着Cu/In摩尔比的减小,CIZS量子点的发光峰位由675 nm蓝移至644 nm,同时量子点的荧光强度逐渐提高;当n(Cu)/n(In)=1∶7时,荧光强度达到最高值.同时,量子产率(QYs)达到最大值6.2;.基于CIZS量子点的LED成功实现发光,其中显色指数达81.2,发光效率为36.8 lm/W,表明了CIZS量子点在照明领域良好的应用前景.     

微乳液法制备二氧化硅包覆ZnS:Mn/CdS纳米晶

采用微乳液法制备核壳结构ZnS:Mn/CdS(～4.5nm)纳米晶,为获得水溶性纳米晶,继续向此微乳液添加硅酸乙酯(TEOS),并使用氨水作为催化剂,通过TEOS水解缩聚反应,在ZnS:Mn/CdS粒子表面生长连续的二氧化硅壳层.采用透射电子显微镜(TEM)、X射线衍射(XRD)、红外光谱(IR)、光致发光谱(PL)对其表面形貌、结构和光学特性进行表征.ZnS:Mn /CdS纳米粒子表面被二氧化硅壳层完全包覆,粒径大小约为10nm左右,粒子均匀性好.由于二氧化硅相无定形且透光性良好,二氧化硅包覆ZnS:Mn/CdS纳米晶的光学特性与未包覆的ZnS:Mn/CdS极其相似.     

功能化ZnS:Mn/ZnS纳米微粒的制备及光学性质的研究

本文采用反相微乳液法制备了核壳结构的ZnS:Mn/ZnS纳米微粒.为了获得具有一定水溶性及生物相容性的纳米颗粒,巯基乙酸被直接加入到反相微乳液体系中对ZnS:Mn/ZnS纳米颗粒进行表面改性.连接上巯基乙酸的ZnS:Mn/ZnS纳米微粒在600nm处的光致发光明显增强.实验结果显示导致荧光增强的机理可能是有机分子及多核锌配合物的钝化作用.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Crystallization behaviours ofCo100−1(x+y)NbxBy amorphous alloys

The crystallization behaviours of Co_100?1(x+y)Nb_xB_y amorphous alloys were investigated by means of differential thermal analysis and a conventional X-ray diffractometer. The crystallization sequences are discussed in terms of the equilibrium phase diagram of the ternary alloy system.Assuming crystallization occurs as a result of nucleation and growth, the stabilizing effect of eutectic phase separation on the crystallization is shown by introducing the effective free energy of the critical nucleus.