IR Reflection of Thin Bi4Ge3O12 Films

The spectra of IR reflection of the systems thin Bi₄Ge₃O₁₂ film–substrate made of molten -SiO₂ quartz in the region 10–1600 cm^–1 at 295 K are investigatedterpretation of fundamental vibrations in the region 10–800 cm^–1 and two phonon processes in the region 800–1600 cm^–1 are considered.     

Infrared properties of quartz fibres

The IR properties of micron-size amorphous SiO₂ fibres have been investigated between 400 cm^–1 and 1400 cm^–. For the single scattering size and shape effects have been measured and compared with theory. The observed diffuse reflection of quartz wool can be explained qualitatively by the Kubelka-Munk theory for multiple scattering.reported at the 5th International Conference on Infrared and Millimeter Waves, October 6–10, 1980     

Temperature dependence of anisotropy in monocrystalline lithium ferrite films

A study of crystallographic and uniaxial anisotropy in monocrystalline Li-ferrite films in the temperature range 4.2–550°K is presented. The experimental results K₁(T) agree well with calculations based on the one ion model with crystalline field coefficients of a_A=–2.77 ·10^–2 cm^–1, a_B=3.34 · 10^–2 cm^–1. An experimental function K_u(T) is obtained which does not contradict the assumption that anisotropic stresses are responsible for the development of uniaxial anisotropy in Li-ferrite films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 113–116, August, 1973.     

Determination of the unsaturated losses and of the saturation intensity in the KrCl excimer laser

The unsaturated losses , and the saturation intensityI _s, were measured in an uv-preionized KrCl laser for optimized He and Ne based laser gas mixtures. The measurements were made as a function of the specific power loading and of the total pressure of the laser mixtures. Higher values for andI _s were found for the Ne-based laser mixture than for the He-based mixture. At 45 kV charging voltage and at 355 kPa of total pressure we measured =0.053 cm^–1 andI _s =9.4MW/cm² for the Ne based mixture, and =0.035 cm^–1 andI _s =5.1MW/cm² for the He based mixture.     

Evolution of the homogeneous IR spectrum of a highly vibrationally excited molecule as a result of a change in its vibrational energy

Using a photodissociation technique, we have measured the IR spectrum of thev ₂₁ mode of the (CF₃)₃ CI molecule with a vibrational energy ofE ₂=42500±3500 cm^–1 which is more than two times the dissociation energy. The experimental spectrum of a Lorenzian shape with a halfwidth of ₂=10.8±1.5 cm^-1 has been analyzed simultaneously with the results of the preceding work (₁=8.6±0.6 cm^-1) that were obtained at a lower vibrational energy (E ₁=36500±2500 cm^–1).     

Photoconductivity of highly excited A IV B VI thin films

We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients _A5×10^–28 cm⁶ s^–1 for PbTe and _A5.3×10^–29 cm⁶ s^–1 for PbS for carrier concentration changes N>10¹⁸ cm^–3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.     

Investigations on the excited states of Eu2+ in CaF2-and SrF2-crystals by two-photon absorption spectroscopy

The two-photon-excitation spectra of Eu²⁺:CaF₂ and Eu²⁺:SrF₂ have been studied at 4.2 K in the region between 24,100cm^–1 and 28,100cm^–1. Besides a broad two-photon absorption region two groups of sharp lines at 27,600cm^–1 and 28,000cm^–1 in Eu²⁺:CaF₂ (27,670cm^–1 and 28,080cm^–1 in Eu²⁺:SrF₂) are identified with the transitions 4f ⁷:⁸ S _7/24f ⁷:⁶ P _7/2,⁶ P _5/2. It is shown that the 4f-states of Eu²⁺ in this host lattice differ significantly in their physical properties from the same states of the isoelectronic Gd³⁺. For these transitions, however, the calculated two-photon absorption rates are in good agreement with the experiments.A project of the Sonderforschungsbereich 65 Festkörperspektroskopie, Darmstadt-Frankfurt, supported by the Deutsche Forschungsgemeinschaft     

Fluorimetric Determination of Thyroxine Hormone with Eu(III)-(Pyridine-2,6-Dicarboxylate) Tris Complex

We describe a method for the determination of thyroxine (Thy) using its quenching effect on Eu(PDA)₃ ^3- tris complex fluorescence. The relative fluorescence intensities are measured at fixed _exc = 282 nm, _em = 615 nm by titrating the metal complex with Thy in piperazine buffer solution at pH 6.5. Data indicated an associative type of reaction of two molecules valid between 0.0 < R < 1.0, R being the mole ratio of Eu(PDA)₃ ^3- to Thy. Over this ratio and up to (R 1.0) collisional quenching of Eu(PDA)₃ ^3- complex ion emission is seen as a result of heavy atom effect, intermolecular energy transfer playing the main role. This is also confirmed by the Stern-Volmer equation. In optimized experimental conditions, the L- form of Thy is determined in a range of 15.5–551.6 g/ml (2.0 × 10^–5 – 7.1 × 10^–4 M) with relative error of ±1.17%.     

Diffusion of Al in ion-implanted Pd and Pt

The diffusion coefficients of aluminium have been measured in polycrystalline fcc Pd and Pt. The Al-implanted palladium and platinum samples were annealed at 400°–800 °C and 450°–900 °C, respectively. The aluminium profiles were probed using the nuclear resonance broadening (NRB) technique. Values of (1.41±0.09) and (1.38±0.09) eV for the activation energy and (1.5 _–1.0 ⁺⁵ )×10^–6 and (4 _–3 ⁺¹⁰ )×10^–7cm²/s for the frequency factor were obtained for Al in Pd and Pt, respectively. These anomalous results, compared to the normal impurity diffusion, were checked using also Al-evaporated samples.     

Laser-induced free-carrier absorption in Si single crystal

The transmitted energy density in thin single Si crystal, wafers is measured at=1.06 m as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm². The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm² energy density range are fitted with an Auger constant of 10^–30 cm⁶s^–1.Work supported in part by M.P.I. and G.N.S.M.-C.N.R.     

Relation between the fine structure of the vibrational spectrum of the crystal lattice and the cation distribution in Co1+2xFe2−3xSbxO4 ferrites

The infrared reflection spectra in the region of lattice vibrations (1500–200 cm^–1) of ferrite spinels Co_1+2xFe_2–3xSb_xO₄ with x=0.0–0.4 are investigated. The permittivity spectra are calculated using the Kramers-Kronig relations. A dispersion analysis of the ₁(v); ₂(v) spectra, carried out using the multiscintillator model, enabled the fine structure of the bands of the spectra to be determined. It was found that for CoFe₂O₄ ferrite the short-wave band (v=590 cm^–1) consists of two components, while the long-wave band (v=375 cm^–1) consists of fur components. Since cobalt ferrite is inverted spinel, in which there are only Fe³⁺ ions in the tetra positions, the doublet structure with v=590 cm^–1 must obviously belong to vibrations of the ion groups FeO₆ and CoO₆, while the second band may belong to vibrations of the ion complexes consisting of the tetra-cation (Fe³⁺), oxygen and the three closest octa-cations [3Fe], [2Fe1Co], [2Co1Fe] and [3Co]. The replacement of some of the iron ions with antimony leads to the appearance of additional lines from the short-wave edge of both bands. The intensity of these lines increases as the value of the diamagnetic substitution increases, which enables the highest-frequency component to be uniquely related to the vibrations of the complex formed by the tetra-cations Fe³⁺ or Co²⁺, the anion and the three octa-cations Sb⁵⁺.V. I. Ul'yanov-Lenin Kazan State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 105–109, July, 1995.     

Far infrared surface electromagnetic waves propagation on A3B5 semiconductors

The real and imaginary parts of surface electromagnetic waves (SEW) refraction index n_ef in n-type InSb, GaAs and InP have been measured in FIR region (=85–142 cm^–1). The n_ef measurements allowed to determine plasma frequency _p and plasmon damping . The obtained nonlinear SEW propagation distance L dependence on Te impurity concentration in GaAs (N=10¹⁷–10¹⁹ cm^–3) was explained taking into account the conduction band nonparabolity as well as the presence of isostructural phase transition at N=2×10¹⁰ cm^–3.     

Instability of the molecular structure of monobenzoporphin to the alternation of the macrocycle bond lengths and its manifestation in the electronic spectra

Quantum-chemical calculations of the geometric structure of the molecules of monobenzoporphin (H₂ MBP) and monobenzoporphin with methyl and ethyl substituents in the five-member rings (H₂MBPm) have been carried out by the restricted and unrestricted Hartree-Fock methods with the AM1 Hamiltonian (AM1 RHF and AM1 UHF methods). The calculation of the above-indicated molecules by the AM1 RHF method without restrictions on their symmetry has given, for them, a planar structure with an alternation of the lengths of the bonds along the 18-member azacyclopolyene and the symmetry C _1h for their aromatic part. The calculation of the transitions to the excited electron Q states in such a structure by the CNDO/S method has shown that these states are characterized by large hypsochromic shifts (~3000–4000 cm^–1 ) relative to the Q levels of porphin (H₂P), which is in contradiction with the experimental data, according to which these shifts are bathochromic and comprise = –330 cm ^–1 and = –750 cm^–1. Optimization of the geometry of the H₂ MBP and H₂MBPm molecules by the AM1 UHF method gives, for them, a structure with equal lengths of the bonds along the 18-member azacyclopolyene with a symmetry differing insignificantly from the D _2h symmetry; elements of the structure with a lower symmetry and an alternation of the lengths of the bonds are retained in the condensed pyrrolenine and benzene rings. The calculation of the shifts of the Q levels in the H₂MBPm molecule of this geometry relative to the analogous levels in H₂P has shown that they are bathochromic and equal to = –520 cm^–1, and the RHF calculation with optimization of the geometry of the molecule and restrictions on the effective symmetry D _2h of the 18-member azacyclopolyene has given = –350 cm^–1 and = –430 cm^–1. The restrictions imposed on the C ₂ symmetry of the H₂MBP molecules by the RHF method are inadequate to equalize the lengths of the bonds along the 18-member azacyclopolyene. The calculations of the energy of the B levels of the monobenzoporphyrins considered also lend credence to their geometric structure with equal lengths of the bonds along the 18-member azacyclopolyene.Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 71, No. 6, pp. 712–721, November–December, 2004.This revised version was published online in April 2005 with a corrected cover date.     

Enhanced flux pinning in pulsed laser deposited Y Ba2Cu3O7−δ : BaTiO3 nanocomposite thin films

The effect of incorporation of BaTiO₃(BTO) nanoparticles on the flux pinning properties of pulsed laser deposited YBCO:BTO thin films was studied. Substantial increase in the critical current density (J_C) and the pinning force density (F_p) of the nanocomposite thin films was observed. At 77 K, and zero applied magnetic field, the value of J_C for YBCO and YBCO:BTO (2%) thin films were 2.93 MA/cm² and 6.43 MA/cm², respectively. At the same temperature and an applied magnetic field of 4 T, the value of J_C increases from 3.6×10⁴ A/cm² for YBCO thin film to 2.7×10⁵ A/cm² for YBCO:BTO (2%) nanocomposite thin film. The study of temperature and field dependence of of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in the improvement of flux pinning properties.     

Low-Temperature Midinfrared Absorption in GaSe

We report the measurement of the temperature dependence of the absorption spectra of - GaSe over the temperature range 300 K to 5 K. Measurements have been made for both the e-ray (polarized parallel to the crystals c-axis) and the o-ray (polarized perpendicular to the c-axis), over the spectral range 4000 to 10 cm^–1. Nine absorption lines at 417, 440, 499, 546, 891, 945, 1015, 1093, 1270 cm^–1 were recorded at 300 K for the e- ray spectra. Some of these lines were identified using the results of a modified single layer, linear chain model of GaSe. The lines at 417, 440 and 499 cm^–1 were assigned to local impurity absorption originating from N, Mg and O, respectively. The weak lines at 945, 1015 and 1093 cm^–1 were assigned to hole transitions from the acceptor levels to the top of the valence band. Two absorption lines at 891 cm^–1 and 1270 cm^–1 were assigned to hole transitions from the quasi-local acceptor levels to the double degenerate valence sub-bands ₅ or ₆. The origin of lines recorded in the far IR absorption spectra at 20, 37 cm^–1 and 362 cm^–1 were also identified.     

Crystal fields in PrB6 and NdB6

The electron-phonon relaxation times of the crystal-field levels of the metastable state⁵D₄ of Tb³⁺ were measured between 2 and 4.2K. The relaxation of the lowest pseudodoublet (E=1.25 cm^–1) shows an Orbach process via higher crystal-field levels. The other levels show direct relaxation on a nanosecond time scale. The higher crystal-field levels were used to look for propagation of high-energy (4THz) nonequilibrium phonons by phonon-induced fluorescence. No ballistic propagation of high-energy phonons could be found.     

Saturation of resonant frequency conversion processes in cadmium vapour

We have investigated two-photon resonant up conversion of 375 to 159 nm coherent radiation using the four-frequency process ₁₅₉=2₃₇₅+₁₀₄₀ in cadmium vapour, where the ir component (1040 nm) is internally generated by the 375 nm pump tuned to the Cd two-photon transition 5s ^{2 1} S ₀5s6s ¹ S ₀. Scaling laws and tuning behaviour of both the 159 and 1040 nm output power were measured up to 1×10⁸ W cm^–2 pump intensity and 2×10¹⁷ cm^–3 Cd number density. The results are compared to numerical calculations based on semiclassical theory in a stationary perturbation approximation up to third order. Here, in accordance with experimental results, the ir component was assumed to originate from a superposition of stimulated emission and parametric generation. The observed saturation effects turned out to be mainly due to population changes of the atomic levels involved and are qualitatively reproduced by calculations. Discrepancies with respect to absolute output levels are discussed in terms of the approximations in the theoretical formalism.     

Electrical properties and defect model of tin-doped indium oxide layers

Tin-doped In₂O₃ layers were prepared by the spray technique with doping concentrationsc _Sn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×10²¹cm^–3 and minimum resistivities =1.3×10^–4 cm are obtained if the layers are doped withc _Sn9 at. % and annealed in an atmosphere of oxygen partial pressurep _O2 10^–20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In₂O₃:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn₂O₄ complex. At low doping concentrationc _Sn4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K ₁ ·p _O2 ^–1/8 ·(3 ×10¹⁰ × c_Sn –N)^1/4 with an equilibrium constantK ₁=1.4×10¹⁵ cm^–9/4bar^1/8, determined from our measurements.     

Determination of the isotopic composition of hydrogentritium mixtures by emission spectroscopy

Absolute effective cross sections for collisions of the second kind are evaluated by studying the dependence of line or molecular band intensification on the partial pressures of mixture components in a glow discharge. Determination of the cross sections is based on measurement of the relative intensities of the corresponding bands in mixtures of different percentage composition. The resulting values for the effective cross sections Q are as follows: N₂(C³ II)_v=3 and Ar(³P_o) 3.10^–15 cm², N₂(C³ II)_v=2 and Ar(³P₂) 0.8.10^–15 cm, N₂(C³ II)_v=0 and CO 2.10^–15 cm, CO(C³ II)_v=0 and Ar(³P₂) 0.3.10^–15 cm².In conclusion, the authors wish to thank V. S. Mel'chenko for discussing the results of the present study.