Improved focused ion beam target preparation of (S)TEM specimen--a method for obtaining ultrathin lamellae

Specimen quality is vital to (scanning) transmission electron microscopy (TEM) investigations. In particular, thin specimens are required to obtain excellent high-resolution TEM images. Conventional focused ion beam (FIB) preparation methods cannot be employed to reliably create high quality specimens much thinner than 20 nm. We have developed a method for in situ target preparation of ultrathin TEM lamellae by FIB milling. With this method we are able to routinely obtain large area lamellae with coplanar faces, thinner than 10 nm. The resulting specimens are suitable for low kV TEM as well as scanning TEM. We have demonstrated atomic resolution by Cs-corrected high-resolution TEM at 20 kV on a FIB milled Si specimen only 4 nm thick; its amorphous layer measuring less than 1 nm in total.     

Off-axis electron holography of unbiased and reverse-biased focused ion beam milled Si p-n junctions.

Off-axis electron holography is used to measure electrostatic potential profiles across a silicon p-n junction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled sample in situ in the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.     

Imaging thin films of nanoporous low-k dielectrics: comparison between ultramicrotomy and focused ion beam preparations for transmission electron microscopy.

Ultramicrotomy, the technique of cutting nanometers-thin slices of material using a diamond knife, was applied to prepare transmission electron microscope (TEM) specimens of nanoporous poly(methylsilsesquioxane) (PMSSQ) thin films. This technique was compared to focused ion beam (FIB) cross-section preparation to address possible artifacts resulting from deformation of nanoporous microstructure during the sample preparation. It was found that ultramicrotomy is a successful TEM specimen preparation method for nanoporous PMSSQ thin films when combined with low-energy ion milling as a final step. A thick, sacrificial carbon coating was identified as a method of reducing defects from the FIB process which included film shrinkage and pore deformation.     

Site-specific specimen preparation by focused ion beam milling for transmission electron microscopy of metal matrix composites.

This work describes the application and usefulness of the focused ion beam (FIB) technique for the preparation of transmission electron microscopy (TEM) samples from metal matrix composite materials. Results on an Aldiamond composite, manufactured by the squeeze casting infiltration process, were chosen for demonstration. It is almost impossible to prepare TEM specimens of this material by any other conventional method owing to the presence of highly inhomogeneous phases and reinforcement diamond particles. The present article gives a detailed account of the salient features of the FIB technique and its operation. One of the big advantages is the possibility to prepare site-specific TEM specimens with high spatial resolution. The artifacts occurring during the specimen preparation, for example, Ga-ion implantation, curtain effects, amorphous layers, bending of the lamella, or different milling behaviors of the materials have been discussed. Furthermore, TEM examination of the specimens prepared revealed an ultrafine amorphous layer of graphite formed at the interface between the Al and diamond particles that may affect the interfacial properties of the composite materials. This may not have been feasible without the successful application of the FIB technique for production of good quality site-specific TEM specimens.     

Damage in III-V compounds during focused ion beam milling.

The damage layers generated in III-V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.     

Point defect clusters and dislocations in FIB irradiated nanocrystalline aluminum films: an electron tomography and aberration-corrected high-resolution ADF-STEM study

Focused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.     

Focused ion beam irradiation—morphological and chemical evolution in PMMA

For poly(methyl methacrylate) (PMMA) as a representative of amorphous thermoplastic polymers, the milling effects, and the chemical changes due to ion bombardment with a focused ion beam (FIB) at normal incidence are studied with scanning force microscopy (SFM), scanning electron microscopy (SEM)/energy dispersive X‐ray (EDX), and infrared (IR) spectroscopy for varying conditions of Ga⁺ treatment, including the effect of partial water pressure. Stopping and Range of Ions in Matter (SRIM) simulation results for 30 keV Ga⁺ at normal incidence show that the zone of primary ion–polymer interaction extends ca 100 nm into the PMMA. Accordingly, this interaction region is much wider than the original beam diameter. The width of the region where the recoiled ions interact strongly with the polymer chains is larger. Secondary processes, such as fragment diffusion and phonon transport, are expected to extend even farther into the polymer. SEM and SFM reveal distinct topologies of areas milled without or in presence of water vapour. Water vapour–assisted FIB milling produces more roughness and defects. The infrared attenuated total reflection spectroscopy (IR‐ATR) spectra indicate that ion milling in PMMA damages methacrylate side groups in particular. In contrary to metals, an increase in the degree of milling is found when the beam spot overlap parameter increases. Copyright © 2009 John Wiley & Sons, Ltd.     

High-quality sample preparation by low kV FIB thinning for analytical TEM measurements.

Focused ion beam specimen preparation has been used for NiTi samples and SrTiO3/SrRuO3 multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure. Transmission electron microscopy techniques show that the samples are of high quality with a controlled thickness over large scales. Furthermore, preferential thinning effects in multicompounds are avoided, which is important when analytical transmission electron microscopy measurements need to be interpreted in a quantitative manner. The results are compared to similar measurements acquired for samples obtained using conventional preparation techniques such as electropolishing for alloys and ion milling for oxides.     

Submicron scale patterning in sintered silica colloidal crystal films using a focused ion beam

Focused ion beam milling is used to fabricate micron and submicron scale patterns in sintered silica colloidal crystal films. Rectangular cavities with both solid and porous boundaries, fluidic channels, and isolation of a small number of packed spheres are patterned. The ion beam can pattern sintered films of individual submicron size spheres and create patterns that cover up to 40 mum in less than 15 min. The experiments in this work indicate that the amount of redeposited material on the surface of a milled cavity determines whether the surface will be porous or solid. FIB direct patterning has applications in colloidal crystal based lithography, integrated photonic devices, optofluidic devices, and micrototal-analytical systems.     

Focused ion beam sectioning and lift-out method for copper and resist vias in organic low-k dielectrics.

The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.     

Plan-view preparation of TEM specimens from thin films using adhesive tape

A simple plan-view sample preparation technique for transmission electron microscopy (TEM) specimens is proposed for thin films by tearing-off the film with adhesive tape. The demand for very thin samples is highest for nanostructured materials where the structure of 2-5 nm sized features (grains) needs to be resolved; therefore, overlapping of nanometer-sized features should be avoided. The method provides thin areas at the fracture edges of plan-view specimens with thickness in the range of the grain size in the film allowing for artifact free high-resolution TEM imaging. Nanostructured materials typically fracture between the grains providing areas with the thickness of the grain size. Besides the swiftness of the method, the samples are free of surface amorphization artifacts, which can occur in ion beam milling up to 1 nm depth even at low energy ion bombardment. The thin film tear-off technique is demonstrated on a CuMn alloy thin film with grain size of 2 nm.     

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometer analysis of the grain boundary segregation/precipitation of boron in steel

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometry (FIB‐TOF‐SIMS) analysis was performed to investigate the grain boundary segregation/precipitation of boron in steel. To overcome the low secondary ion yield from the primary Ga⁺ source and the sensitivity using a high‐resolution Ga‐FIB source, a low energy oxygen ion beam was used prior to the Ga‐FIB‐TOF‐SIMS analysis. As a result, it was found that Ga‐FIB‐TOF‐SIMS is a very powerful tool for mapping boron segregation and/or precipitation in steel with a spatial resolution of ~200 nm. In addition, the results were strongly dependent on the surface composition. Copyright © 2014 John Wiley & Sons, Ltd.     

Evaluation of fine structure of tubular zeolite NaA membrane by FTIR-ATR and FIB-TEM.

A zeolite NaA (LTA) membrane supported by an alumina porous support tube for pervaporation (PV) dehydration of ethanol was characterized by transmission electron microscopy (TEM) using a focused ion beam (FIB) thin-layer specimen preparation technique and by Fourier transform infrared attenuated total reflectance method (FTIR-ATR) using a diamond prism as the waveguide. FIB-TEM clearly presented cross-section images up to about 15 microm depth from the membrane surface. FTIR-ATR monitored the Si-O asymmetric stretching vibration spectrum. The Si-O spectrum was compared with the TEM image and their relationships were discussed. By combining the two methods, we could study the thickness of surface LTA crystals, the grain boundary, the LTA/alumina interface structure and the crystallinity and density of materials inside of the alumina porous support. Consequently, fine structure changes of the LTA membrane corresponding to the hydrothermal synthesis condition could be sensitively detected.     

A review on the fabrication of substrates for surface enhanced Raman spectroscopy and their applications in analytical chemistry

This work reviews different types of substrates used for surface-enhanced Raman scattering (SERS) that have been developed in the last 10 years. The different techniques of self-assembly to immobilize metallic nanoparticles on solid support are covered. An overview of SERS platforms developed using nanolithography methods, including electron-beam (e-beam) lithography and focused ion beam (FIB) milling are also included, together with several examples of template-based methodologies to generate metallic nano-patterns. The potential of SERS to impact several aspects of analytical chemistry is demonstrated by selected examples of applications in electrochemistry, biosensing, environmental analysis, and remote sensing. This review shows that highly enhancing SERS substrates with a high degree of reliability and reproducibility can now be fabricated at relative low cost, indicating that SERS may finally realize its full potential as a very sensitive tool for routine analytical applications.     

Ion beam induced deposition of platinum carbon composite electrodes for combined atomic force microscopy–scanning electrochemical microscopy

In the present study, ion beam induced deposition (IBID) of platinum carbon (PtC) composite electrodes is evaluated for combined atomic force microscopy–scanning electrochemical microscopy (AFM–SECM) probes. After deposition, the PtC composite materials are post-treated using focused ion beam (FIB) milling to decrease the carbon content of the material. It is shown that this treatment leads to an improvement of electrode characteristics for selected analytes, including the oxidation of potassium hexacyanoferrate(II) trihydrate (Fe(CN)₆^4?) and hydrogen peroxide (H₂O₂). Moreover, the proposed approach is compatible with microfabricated AFM–SECM probes for increasing the AFM tip-integrated electroactive area while maintaining the geometric dimensions, which is important for imaging biosensor development.     

Sample Preparation of Energy Materials for X‐ray Nanotomography with Micromanipulation

X‐ray nanotomography presents an unprecedented opportunity to study energy storage/conversion materials at nanometer scales in three dimensions, with both elemental and chemical sensitivity. A critical step in obtaining high‐quality X‐ray nanotomography data is reliable sample preparation to ensure that the entire sample fits within the field of view of the X‐ray microscope. Although focused‐ion‐beam lift‐out has previously been used for large sample (few to tens of microns) preparation, a difficult undercut and lift‐out procedure results in a time‐consuming sample preparation process. Herein, we propose a much simpler and direct sample preparation method to resolve the issues that block the view of the sample base after milling and during the lift‐out process. This method is applied on a solid‐oxide fuel cell and a lithium‐ion battery electrode, before numerous critical 3D morphological parameters are extracted, which are highly relevant to their electrochemical performance. A broad application of this method for microstructure study with X‐ray nanotomography is discussed and presented.     

Cryo-FIB-Preparation and Cryo-SEM Investigation of Gold Nanolayers Used as Absorber for Laser Welding of Polymer Foils

The morphology of welded polymer foils was investigated by Scanning Electron Microscopy (SEM) using Focused Ion Beam (FIB) technology for cross-sectional preparation. Due to the sensitive structure of the copolymer Ethylene Tetrafluororethylene (ETFE), FIB preparation and SEM investigation were performed at cryo conditions. A gold nanolayer was used as absorber for the laser beam to weld the transparent copolymer foils. The embedding of the gold nanolayer inside the welding seam and its influence on the mechanical stability of the welding seams was demonstrated.     

冷冻双束扫描电镜的开放与管理

带冷冻传输系统的双束扫描电镜可实现样品原生态下的高分辨图像采集,以及冷冻含水样品的超薄切片制备,而被广泛应用于生命、医学、食品、化学、材料等领域,在相关科学研究中逐渐体现出不可取代的地位. 介绍了带冷冻系统扫描电镜的基本配置,并重点从开放共享与成效、仪器常见故障及维护等方面详细阐述了仪器的科学管理,以提高仪器的使用效率,为同类型仪器的运行提供管理经验.     

Argon cluster cleaning of Ga+ FIB-milled sections of organic and hybrid materials

Secondary ion mass spectrometry studies have been made of the removal of the degraded layer formed on polymeric materials when cleaning focused ion beam (FIB)-sectioned samples comprising both organic and inorganic materials with a 30-keV Ga⁺ FIB. The degraded layer requires a higher-than-expected Ar gas cluster ion beam (GCIB) dose for its removal, and it is shown that this arises from a significant reduction in the layer sputtering yield compared with that for the undamaged polymer. Stopping and Range of Ions in Matter calculations for many FIB angles of incidence on flat polymer surfaces show the depth of the damage and of the implantation of the Ga⁺ ions, and these are compared with the measured depth profiles for Ga⁺-implanted flat polymer surfaces at several angles of incidence using an Ar⁺ GCIB. The Stopping and Range of Ions in Matter depth and the measured dose give the sputtering yield volume for this damaged and Ga⁺-implanted layer. These, and literature yield values for Ga⁺ damaged layers, are combined on a plot showing how the changing sputtering yield is related to the implanted Ga density for several polymer materials. This plot contains data from both the model flat poly(styrene) surfaces and FIB-milled sections showing that these 2 surfaces have the same yield reduction. The results show that the damaged and Ga⁺-implanted layer's sputtering rate, after FIB sectioning, is 50 to 100 times lower than for undamaged polymers and that it is this reduction in sputtering rate, rather than any development of microtopography, that causes the high Ar⁺ GCIB dose required for cleaning these organic surfaces.     

Nano- and micro-fabrications of polystyrene having atactic and syndiotactic structures using focused ion beams lithography

Micro- and nano-fabrications of polystyrene (PS) having the atactic and syndiotactic structures were carried out with direct maskless etching using focused ion beam (FIB). Micro- and nano-scale structures were obtained with selective beam and material conditions avoiding the beam-heating and charge-up effects. The etching rates were different between atactic and syndiotactic PS. The rate of fabrication for syndiotactic PS shows higher than that of atactic one. Moreover, the direct etching was influenced by the molecular weight. The etching rate for the lower molecular weight became the faster. The FIB direct etching proceeds through the two steps (decomposition and desorption (outgas)). Both decomposition and desorption are influenced by both conformation (morphology) and configuration (stereoregularity). Furthermore, the beam profiles and fluence play the important roles to perform the nano-fabrication of PS.