天然杂质对黄铁矿的电子结构及催化活性的影响

采用密度泛函理论和平面波赝势方法对含天然杂质黄铁矿的电子结构和光学性质进行了计算,并讨论了二十种天然杂质:钴、镍、砷、硒、碲、铜、金、银、钼、锌、铊、锡、钌、钯、铂、汞、镉、铋、铅和锑,对黄铁矿催化活性的影响.结果表明在过渡金属杂质中,杂质能级主要由它们的d轨道产生,而在主族金属及非金属杂质中,杂质能级主要由它们的s或p轨道产生.含铜、钼、砷、金、银或镍的黄铁矿对氧的还原的电催化能力增强.除锌、钼、钌、砷、锑、硒和碲外,其余杂质能增强黄铁矿表面俘获电子的能力,使光生电子和空穴复合的概率减小.光学性质计算表 关键词： 天然黄铁矿 杂质 电子结构 光学性质     

Ab-initio study of Li based chalcopyrite compounds LiGaX2 (X= S,Se, Te) in tetragonal symmetry: A class of future materials for optoelectronic applications

Structural, electronic, optical, and thermoelectric aspects of chalcopyrite LiGaX₂ (X = S, Se and Te) compounds have been investigated by density functional theory (DFT) based Wien2k simulator. The optimized ground state parameters are calculated by Wu-Cohen generalized gradient approximation (WC-GGA) and electronic structures, which have been further improved by modified Becke-Johnson (mBJ) potential. Moreover, a comparative study is given among the contribution of three anions (S, Se and Te) in the same symmetry of tetragonal phase. The calculated band gaps of the studied compounds are 3.39, 2.83, and 1.96 eV for LiGaS_2, LiGaSe₂ and LiGaTe₂, respectively. The observed band gaps consider the studied compounds are potential materials for optoelectronic devices. In addition, the optical response of the studied materials has been analyzed in terms of dielectric constants, refraction, absorption, reflectivity and energy loss function. We have also reported the thermoelectric properties like Seebeck coefficient, thermal and electrical conductivities, and figure of merit as function of temperatures by using BoltzTrap code. The high thermal efficiency and absorption spectra in the visible region make the studied materials multifunctional for energy applications.     

Electronic structure and structural phase stability of CuAlX2 (X=S, Se, Te) under pressure

The electronic and structural properties of chalcopyrite compounds CuAlX₂ (X=S, Se, Te) have been studied using the first principle self-consistent Tight Binding Linear Muffin-Tin Orbital (TBLMTO) method within the local density approximation. The present study deals with the ground state properties, structural phase transition, equations of state and pressure dependence of band gap of CuAlX₂ (S, Se, Te) compounds.Electronic structure and hence total energies of these compounds have been computed as a function of reduced volume. The calculated lattice parameters are in good agreement with the available experimental results. At high pressures, structural phase transition from bct structure (chalcopyrite) to cubic structure (rock salt) is observed. The pressure induced structural phase transitions for CuAlS₂, CuAlSe₂, and CuAlTe₂ are observed at 18.01, 14.4 and 8.29 GPa, respectively. Band structures at normal as well as for high-pressure phases have been calculated. The energy band gaps for the above compounds have been calculated as a function of pressure, which indicates the metallic character of these compounds at high-pressure fcc phase. There is a large downshift in band gaps due to hybridatization of the noble-metal d levels with p levels of the other atoms.     

Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1-xOx （Y = S,Se, Te） semiconductors by first-principles calculations

The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.     

Electronic properties of chalcopyrite CuAlX2(X=S,Se,Te) compounds

We present results of the band structure and density of states for the chalcopyrite compounds CuAlX₂ (X=S,Se,Te) using the state-of-the-art full potential linear augmented plane wave (FP-LAPW) method. Our calculations show that these compounds are direct band gap semiconductors. The energy gap decreases when S is replaced by Se and Se replaced by Te in agreement with the experimental data. The values of our calculated energy gaps are closer to the experimental data than the previous calculations. The electronic structure of the upper valence band is dominated by the Cu-d and X-p interactions. The existence of Cu-d states in the upper valence band has significant effect on the optical band gap.     

Electronic structure and spin–orbit coupling in ternary transition metal chalcogenides Cu2TlX2 (X = Se,Te)

Ternary transition metal chalcogenides provide a rich platform to search and study intriguing electronic properties. Using angle-resolved photoemission spectroscopy and ab initio calculation, we investigate the electronic structure of Cu$_{2}$Tl$X_{2}$ ($X=\text{Se, Te}$), ternary transition metal chalcogenides with quasi-two-dimensional crystal structure. The band dispersions near the Fermi level are mainly contributed by the Te/Se p orbitals. According to our ab-initio calculation, the electronic structure changes from a semiconductor with indirect band gap in Cu$_{2}$TlSe$_{2}$ to a semimetal in Cu$_{2}$TlTe$_{2}$, suggesting a band-gap tunability with the composition of Se and Te. By comparing ARPES experimental data with the calculated results, we identify strong modulation of the band structure by spin-orbit coupling in the compounds. Our results provide a ternary platform to study and engineer the electronic properties of transition metal chalcogenides related to large spin-orbit coupling.     

Prediction of 2D Li2X (X=Se,Te) monolayer semiconductors by first principles calculations

Two dimensional monolayer materials play important roles in new generation of electronic and optical devices in nano scale. In this paper, by using first principles calculations, the existence of 2D Li₂X (X=Se, Te) monolayer materials are theoretically predicted. Through cohesive energy calculation and phonon dispersion simulation, it is proved that the proposed 2D Li₂Se and Li₂Te monolayer materials are energetically and dynamically stable suggests their potential experimental realization. Our study shows that these newly predicted compounds are direct semiconductors and have strain tunable wide band gaps. As direct semiconductors, these new monolayers may have many applications in electronics and optoelectronics devices.     

Optical properties of chalcogen-loaded zeolite (ZSM-5)

Sulfur, selenium, and tellurium were loaded into sub-millimeter size ZSM-5 single crystals, and the optical properties have been comparatively studied. S and Te show similar features, while Se is unique. S and Te have optical absorption edges at wavelengths of ～400 nm with transmission dips at ～450 nm, while Se has the edge at ～550 nm. The three materials provide photoluminescence at visible wavelengths, with the intensities of S and Te being stronger than that of Se by two orders. These optical properties imply that S and Te in the zeolite form small atomic units such as S₃ and Te₂, while Se condenses into single-chain structures.     

First principles study on the structural, electronic and optical properties of diluted magnetic semiconductors Zn1-xCoxX （X=S, Se, Te）

The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant （about 0.6%-0.9%）. This is mainly due to the shortened Co-X bond length. The （partial） density of states （DOS） is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.     

A First-Principles Study of TiX2 (X = S,Se, and Te) Compounds Optical Properties under the Effect of Externally Applied Electric Field and Strain

Physics of the Solid State - Optical properties of titanium dichalcogenide compounds, TiX2 (X = S, Se, and Te) have been calculated by first-principles calculations using density functional theory...     

Trends in the band-gap pressure coefficients and bulk moduli in different structures of ZnGa2S4, ZnGa2Se4 and ZnGa2Te4

We have performed a first-principles investigation for the family of compounds ZnGa2X4 (X = S, Se, Te). The properties of two possible structures, defect chalcopyrite and defect famatinite are both calculated. We reveal that ZnGa2S4 and ZnGa2Se4 have direct band gaps, while ZnGa2Te4 has an indirect band gap. The local density approximation band gaps are found to be very different in two structures, while the lattice parameters and bulk moduli are similar. We extend Cohen’s empirical formula for zinc-blende compounds to this family of compounds. The pressure coefficients are calculated and metallization pressures are discussed. We find that agi remains fairly constant when the group-Ⅵ element X is varied in ZnGa2X4 (Ⅱ-Ⅲ2 -Ⅵ4 ).     

Optical Properties of High Pressure Phases in ZnTe 1− x Se x

We report on the optical properties of high pressure semiconducting phases in ZnTe 1 m x Se x . In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV. In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.     

Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study

Bi(2)Te(2)Se, a ternary tetradymite compound, has recently been identified to be a three-dimensional topological insulator. In this paper, we theoretically study the electronic structures of bulk and thin films of Bi(2)Te(2)Se employing spin-orbit coupling (SOC) self-consistently with density-functional theory. It is found that SOC plays an important role in determining the electronic properties of Bi(2)Te(2)Se. A finite bandgap opens up in the surface states of Bi(2)Te(2)Se thin films due to the hybridization of the top and bottom surface states of films. The intrinsic Bi(2)Te(2)Se thin films of three or more quintuple layers exhibit a robust topological nature of electronic structure with the Fermi energy intersecting the Dirac cone of the surface states only once between time-reversal-invariant momenta. These characteristics of Bi(2)Te(2)Se are similar to the topological behavior of Bi(2)Te(3), promising a variety of potential applications in nanoelectronics and spintronics.     

Random alloy-like local structure of Fe(Se, S)(1-x)Te(x) superconductors revealed by extended x-ray absorption fine structure

The local structure of Fe(Se, S)(1-x)Te(x) ternary (11-type) chalcogenides has been studied by temperature dependent Fe K-edge extended x-ray absorption fine structure measurements. We find that the Fe-Se and Fe-Te distances in ternary FeSe(1-x)Te(x) are closer to the respective distances in the binary systems, revealing significant divergence of the local structure from the average one. The mean square relative displacements show a systematic change with Te content, consistent with bond relaxation in the inhomogeneous ternary phases. Also, the Fe-Te and Fe-S distances in the FeS(0.2)Te(0.8) ternary system are found to be different in the crystallographically homogeneous structure. The observed features are characteristic of ternary random alloys, suggesting that a proper consideration should be given to the atomic distribution for describing the complex electronic structure of these multi-band Fe-based chalcogenides.     

The absorption spectra of single selenium and tellurium chains in dielectric matrix channels

The absorption spectra are reported for single Se and Te chains stabilized in the regular system of parallel channels of mordenite dielectric matrix. A conclusion is made that the Se(Te) chain located in the mordenite channel has no D₃ symmetry as the dihedral angle of the chain varies randomly. A correlation is found between absorption spectra of the Se(Te) chain and amorphous Se(Te).     

新型GeSe2-In2Se3-AgI玻璃性能研究

采用传统熔融-淬冷法制备了一系列新型(100-x)(4GeSe2-In2Se3)-xAgI(x=20,30,40mol%)硫系玻璃样品.利用X射线衍射分析、差热分析、可见-近红外吸收光谱、红外透过光谱、喇曼分析等技术手段研究了该玻璃系统的组成、结构、热稳定性和光学特性等.利用Tauc方程计算出了样品的间接带隙;测试了部分样品在不同升温速率下的差示扫描量热曲线,并采用Kissinger法计算了玻璃样品的析晶活化能.X射线衍射数据表明,该玻璃体系在较宽的组分范围内有良好的非晶特性,成玻范围较宽;差热分析和析晶动力学研究表明,玻璃样品70(4GeSe2-In2Se3)-30AgI具有较好的热稳定性(ΔT=114℃)和较高的活化能(Ea=320.4kJ/mol).随着AgI含量的增加,玻璃的短波吸收限蓝移,并且光学带隙有增大的趋势.此外,红外透过光谱分析表明该玻璃体系具有良好的红外透过性能,其红外截止波长不会随着AgI含量的增加而发生明显变化,皆为16μm左右.     

LiGaX2(X=S,Se, Te)的电子结构,光学和弹性性质的第一性原理计算

采用基于第一性原理的密度泛函理论赝势平面波方法,对LiGaX₂(X=S, Se, Te)的能带结构、态密度、光学以及弹性性质进行了理论计算. 能带结构计算表明LiGaS₂ 的禁带宽度为4.146 eV, LiGaSe₂ 的禁带宽度为3.301 eV, LiGaTe₂ 的禁带宽度为2.306 eV; 其价带主要由Ga-4p 层电子和X- np 层电子的能态密度决定; 同时也对LiGaX< 关键词： 电子结构 光学性质 弹性性质 LGX     

Electronic structure of transition metal dichalcogenides PdTe_2 and Cu_(0.05)PdTe_2 superconductors obtained by angle-resolved photoemission spectroscopy

The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades.Various MX2-type transition metal dichalcogenides,such as WTe2,Ir Te2,and Mo S2,have triggered great attention recently,either for the discovery of novel phenomena or some extreme or exotic physical properties,or for their potential applications.Pd Te2 is a superconductor in the class of transition metal dichalcogenides,and superconductivity is enhanced in its Cuintercalated form,Cu0.05 Pd Te2.It is important to study the electronic structures of Pd Te2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mechanism.Here we report systematic high resolution angle-resolved photoemission(ARPES) studies on Pd Te2 and Cu0.05 Pd Te2single crystals,combined with the band structure calculations.We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds.By carefully examining the electronic structures of the two systems,we find that Cu-intercalation in Pd Te2 results in electron-doping,which causes the band structure to shift downwards by nearly 16 me V in Cu0.05 Pd Te2.Our results lay a foundation for further exploration and investigation on Pd Te2 and related superconductors.     

Charge-density-wave phase of 1T-TiSe2: the influence of conduction band population

The charge-density-wave phase of TiSe(2) was studied by angle-resolved photoelectron spectroscopy and resistivity measurements investigating the influence of the band gap size and of a varying population of the conduction band. A gradual suppression of the charge-density-wave-induced electronic superstructure is observed for a variation of the band gap in the ternary compounds TiC(x)Se(2-x) with C=(S,Te) as well as for an occupation of only the conduction band by H(2)O adsorption-induced band bending. These observations point to an optimum band gap and support an excitonic driving force for the charge-density wave.     

高压下稳态六方Ge2Sb2Te5结构、电子和光学性质的第一性原理研究

采用基于密度泛函理论的广义梯度近似方法研究了稳态六方petrov原子序列结构Ge2Sb2Te5的结构、电子和光学性质。计算所得的平衡态晶格参数与实验数据和先前的理论结果吻合很好。基态的能带结构和态密度表明了稳态六方petrov原子序列结构的Ge2Sb2Te5持有金属性。从压强影响下体积的变化趋势发现稳态六方Ge2Sb2Te5在17 GPa和34 GPa 出现不稳定,暗示在此压强下的相变发生,这与2009年Krbal等人的实验结果相吻合。同时,还系统地研究了稳态六方petrov原子序列结构的Ge2Sb2Te5高压下的光学性质,得到了高压下介电函数、吸收率、光反射率、折射率、消光系数和电子能量损失谱在20 eV内的变化情况。