A Tunneling Model for Afterglow Suppression in CsI:Tl,Sm Scintillation Materials

Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that samarium electron traps scavenge electrons from thallium traps and that electrons subsequently released by samarium recombine non-radiatively with trapped holes, thus suppressing afterglow. Experiments on single crystals support the inference that electrons tunnel freely between samarium ions and are trapped preferentially as substitutional Sm⁺ near V_KA(Tl⁺) centers where non-radiative recombination is the rate-limiting step. Afterglow in microcolumnar films of CsI:Tl,Sm is enhanced by inhomogeneities which impede tunneling between samarium ions, but is partly suppressed by annealing.     

The effect of Pb2+ dopant in the crystal of CsI and its application as scintillation detector: a study of alpha particles

Scintillation crystals have been used in various fields, such as high energy physics, nuclear instrumentation, radiation measurements, medical imaging, nuclear tomography, astrophysics and other fields of science and engineering. For these applications, the development of scintillation crystals with good performance is required. Scintillation crystals based on cesium iodide (CsI) matrix are matters with relatively low hygroscopicity, easy to handle and of low cost, characteristics that favor their use as radiation detectors. In this study, pure CsI crystal and lead doped CsI crystals were grown using the Bridgman vertical technique. The concentration of the lead doping element (Pb) was studied in the range of 10^?2 to 5×10^?4 M. The distribution of the doping element in the crystalline volume was determined by atomic absorption technique. The CsI:Pb crystal with nominal concentration of 10^?3 M was cut into 14 slices of 6 mm. The results show a higher concentration at the top of the crystal with a decrease in the initial phase of growth. The dopant concentration of Pb showed good uniformity from the slice 2 to the slice 12: the region is, therefore, suitable for use as a radiation detector. The luminescence emission of these crystals was measured. A predominant luminescence band near 450 nm and a single broad band around 320 nm were found with the addition of the Pb²⁺ ions in the CsI matrix. Alpha particles spectrometry measurements were carried out to evaluate the developed scintillators.The resolution of 5.6% was obtained for the CsI:Pb 5×10^?4 M crystal, when excited with alpha particles from a ²⁴¹Am source, with energy of 5.54 MeV.     

铈掺杂氧化铝薄膜的蓝紫色发光特性

应用中频反应磁控溅射技术制备了Al₂O₃:Ce³⁺的非晶薄膜.X射线光电子谱(XPS)检测显示薄膜中有Ce³⁺生成.这些薄膜的光致发光峰是在374nm附近,它来自于Ce³⁺离子的5d¹激发态向基态4f¹的两个劈裂能级的跃迁.发光强度强烈地依赖于薄膜的掺杂浓度,但发光峰位置不随掺杂浓度而变化.Ce³⁺含量和薄膜的化学成分是通过X射线散 关键词： 光致发光 2O₃')" href="#">Al₂O₃ 薄膜 稀土元素     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.     

Effect of the chemical state of silver on the luminescence properties of GeO<Subscript>2</Subscript>-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ag films

A sol-gel method is used to prepare GeO₂-Eu₂O₃-Ag films in which the luminescence efficiency of Eu³⁺ ions during UV excitation is comparable to that in films activated by organic europium complexes. The luminescence spectra of these films are recorded, and the films are also studied using EPR and x-ray diffraction. The main origin of this effect is found to be complex Eu-Ag centers with a high quantum yield of the intracenter transfer of excitations to the rare-earth activator from silver ions and Ag _m ⁿ⁺ oligomer clusters located on the surface of silver nanoparticles.     

Photo- and thermo-stimulated luminescence of CsI—Tl crystal after UV light irradiation at 80 K

Abstract

Thermo- and photo-stimulated luminescence are studied for CsI—Tl crystal after the irradiation with the UV light at 80 K. Creation spectrum of the photostimulated luminescence coincides with the D absorption band of Tl⁺ ions. Nature of the defects created by UV light at low temperatures is discussed basing on the correspondence between the thermostimulated glow curve peaks and thermal evolution of the photostimulation spectra observed after irradiation in the D absorption band. Three bands at 1400, 950 and 580 nm have been observed in the stimulation spectrum at 80 K. The 1400 and 950 nm stimulation bands are presumably explained as the optical transitions in the Tl⁰ centre forming the spatially correlated defect pair with V_k centre while the 580 nm stimulation band is connected with the unperturbed Tl⁰ centres. It is concluded that the Tl⁺ luminescence at low temperature is connected with the electron recombination with the Tl²⁺ centre.     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Luminescence of excitons and antisite defects in Lu<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

The luminescence of excitons and antisite defects (ADs) was investigated, as well as the specific features of the excitation energy transfer from excitons and ADs to the activator (Ce³⁺ ion) in phosphors based on Lu₃Al₅O₁₂:Ce (LuAG:Ce) single crystals and single-crystalline films, which are characterized by significantly different concentrations of ADs of the Lu _Al ³⁺ type and vacancy-type defects. The luminescence band with λ_max = 249 nm in LuAG:Ce single-crystal films is due to the luminescence of self-trapped excitons (STEs) at regular sites of the garnet lattice. The excited state of STEs is characterized by the presence of two radiative levels with significantly different transition probabilities, which is responsible for the presence of two excitation bands with λ_max = 160 and 167 nm and two components (fast and slow) in the decay kinetics of the STE luminescence. In LuAG:Ce single crystals, in contrast to single-crystal films, the radiative relaxation of STEs in the band with λ_max = 253.5 nm occurs predominantly near Lu _Al ³⁺ ADs. The intrinsic luminescence of LuAG:Ce single crystals at 300 K in the band with λ_max = 325 nm (τ = 540 ns), which is excited in the band with λ_max = 175 nm, is due to the radiative recombination of electrons with holes localized near Lu _Al ³⁺ ADs. In LuAG:Ce single crystals, the excitation of the luminescence of Ce³⁺ ions occurs to a large extent with the participation of ADs. As a result, slow components are present in the luminescence decay of Ce³⁺ ions in LuAG:Ce single crystals due to both the reabsorption of the UV AD luminescence in the 4f-5d absorption band of Ce³⁺ ions with λ_max = 340 nm and the intermediate localization of charge carriers at ADs and vacancy-type defects. In contrast to single crystals, in phosphors based on LuAG:Ce single-crystal films, the contribution of slow components to the luminescence of Ce³⁺ ions is significantly smaller due to a low concentration of these types of defects.     

Creation of excitons and defects in a CsI crystal during pulsed electron irradiation

Data presented on the influence of the temperature in the range 80–650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉=0.25 MeV, t _1/2=15 ns, j=20 A/cm²). The structure of the short-wavelength part of the transient absorption spectra at T=80–350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE’s) transforms repeatedly during their lifetime until their radiative annihilation at T⩾80 K, alternately occupying di-and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE’s in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I⁻(I⁰I⁻ e ⁻))*. Fiz. Tverd. Tela (St. Petersburg) 40, 640–644 (April 1998)     

稀土（Tb，Gd）掺杂多孔硅的光致发光性能研究

用电化学方法对多孔硅薄膜进行了稀土（Tb，Gd）离子的化学掺杂.利用荧光分光光度计测试了样品的光致发光特性.用扫描电子显微镜研究了薄膜的表面形貌.用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况.结果表明，Tb的掺入显著增强了多孔硅的发光强度，并且发光峰位出现蓝移.这是由于Tb³⁺的4f能级⁵D_{4—⁷F3，⁵D4—⁷F关键词： 多孔硅 稀土掺杂 光致发光}     

Effect of alkali-metal doping on photoluminescence of CdS films

It is established that doping of CdS polycrystalline films with alkaline metals (Li, Na, K, Cs) results in an increase of luminescence intensity by 3–5 times compared with pure films. This increase is accounted for by the placement of alkaline-metal ions in V _Cd ²⁻ cation vacancies, which are nonradiative recombination centers in these films. From the dependences of the luminsecence intensity of the doped films on the synthesis conditions (deposition temperature, concentration of doping impurities, type of doping metal), the parameters that ensure the maximum luminescence intensity of the films are determined as T_dep ≈ 450°C and C_Me = 1·10⁻⁵ at %. The luminescence intensity decreases by 1–3% upon exposure of the films to UV light (λ_max = 365 nm, I = 10²¹ quanta·sec·cm⁻¹) for several hours. This is indicative of the stability of these films against UV radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 362–366, May–June, 2007.     

Structural and optical properties of Au-implanted ZnO films

The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 °C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO₂. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au⁰ is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission.     

Blue luminescence from Ce-doped ZnO thin films prepared by magnetron sputtering

The photoluminescence properties of undoped and Ce-doped ZnO thin films that were prepared by DC magnetron sputtering were investigated. It was found that the incorporation of Ce could intensively affect the structural, optical, and photoluminescence properties of the ZnO thin films. The undoped ZnO thin films showed a sharp UV luminescence, whereas the Ce-doped ZnO thin films showed a broad blue luminescence. The effects of excitation wavelength and annealing atmosphere on the photoluminescence properties of Ce-doped ZnO thin films were also studied. After post-annealing in air and oxygen atmospheres, the blue emissions of the prepared films were drastically suppressed. Our results indicate that the blue emissions of Ce-doped ZnO thin films are related to zinc interstitials and the intrinsic transition of Ce³⁺ ions.     

Photo- and radiation-chemical transformations of carbonate ions in CsI and CsI(Tl) crystals

It is shown that irradiation of CsI and CsI(Tl) crystals containing carbonate and hydroxyl ions induces radiation defects there in the form of color centers, HCO ₃ ^- ions, and H₂O molecules. HCO ₃ ^- ions are formed in the bulk of crystals, whereas water molecules are formed only in the surface layer. IR spectra offered no evidence of decomposition of CO ₃ ^2- ions into CO and CO ₂ ^- and of formation of CO ₃ ^- ions in the course of growth nor in the course of irradiation of CsI(CO₃) and CsI(Tl, CO₃) crystals. Electron activator color centers in CsI(Tl, CO₃) crystals are likely to be stabilized by hole near-activator centers and by HCO ₃ ^- ions produced in radiation-induced chemical reactions.     

Influence of substrate activation process on structural and optical properties of ZnS thin films

ZnS thin films were deposited on glass substrates by a chemical bath deposition method using a substrate activation process in which aluminum ions become “contaminants” that act as a nucleation center for active components within the deposition solution. The structure and morphology results demonstrate that the films have a ZnS sphalerite crystal structure with a particle size less than 15 nm, and the films consist of small homogeneous grains. The effects of the substrate activation process on the band gap energies and donor-acceptor pair luminescence process were also investigated. A green emission centered at 502 nm was produced due to donor-acceptor transitions from the aluminum acceptor to the ionized and substitution aluminum centers (Al³⁺).     

Molecular assembly and photophysical properties of Langmuir-Blodgett films with novel lanthanide complexes of long chain para-dodecanoyl and para-myristoyl oxybenzoate

Several ultrathin luminescent Langmuir-Blodgett (LB) films have been prepared by using the subphase containing the rare earth ions (Eu³⁺, Dy³⁺). The effect of the rare earth ions on the monolayer of p-dodecanoyloxybenzoate (12-OBA) and p-myristoyloxybenzoate (14-OBA) was investigated. IR spectra showed the rare earth ions were bound to the carboxylic acid head groups and the coordination took place between the polar head group and the rare earth ions. The layer structure of the LB films was demonstrated by low-angle X-ray diffraction. The AFM study revealed that the LB films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 241 nm. The LB films can give off strong fluorescence, and the signal can be detected from a single layer. The characteristic luminescence behaviors of LB films have been discussed compared with those of the complexes.     

Ion-beam sputtering deposition of CsI thin films

Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE . PACS 81.15.-z; 79.60.Dp; 68.37.Ps     

Luminescence of Europium–Doped Anodic Oxide Films on Multilayer Titanium–Tantalum Composites

Luminescence of europium in anodic oxide films on thin–film Ti–Ta composites and the process of anodic oxidation of these by the method of chronovoltammetry are investigated for different orders of arrangement of metallic layers and temperatures of heat treatment. A correlation between the luminescence spectra and chronovoltammetric diagrams is noted. The luminescence is shown to be an efficient method for studying the complex phase composition of anodic oxide films. The luminescence spectra of samples are characterized by the presence of several types of luminescence centers inherent in the Eu³⁺ ion and the base. Conditions for the formation of Eu–doped anodic oxide films on a diffusion alloy, which are of interest for microelectronics as a new dielectric material, are determined.     

Sol-gel technique for the generation of europium-doped mesoporous and dense thin films: A luminescent study

In this paper, a series of europium-activated titania mesoporous and dense thin films were prepared by sol-gel process. Structural characterizations show that high europium ion loadings can be incorporated into titanium dioxide walls without destroying the mesoporous arrangement. However, high europium content locks the titanium dioxide crystallization process. Upon 10% europium ions loading, mesoporous thin films are mainly amorphous, whereas dense ones are still partially crystallized. Eu³⁺ ion luminescence has been investigated by exciting through the semiconductor host lattice. Emission features reveal that europium ions adopt similar environments (nanocrystalline and glassy-like ones) in both dense and mesoporous thin films. Fluctuations of europium emission under continuous UV excitation have been observed. One observes that the effect strongly depends on the thin films’ crystalline character which is strongly related with the texturation and existence at the mesoscopic length scale.     

Photoluminescence properties of heat-treated porous alumina films formed in oxalic acid

Photoluminescence and optical properties of as-anodized and heat-treated at 500 °C porous alumina films formed in a 0.3 M oxalic acid at 40 V have been studied. The FTIR indicates that the oxalate ions are embedded in the anodic alumina as chelating bidentate structures and further heating up to 500 °C does not cause any change in ion coordination. The results of time-resolved spectroscopy show the presence of two luminescence centers both in the as-anodized and heat-treated anodic alumina films with lifetimes of about 0.25 and 4.0 ns. The F⁺-centers in anodic alumina are responsible for the luminescence peak at about 420 nm, with a lifetime of about 4.0 ns. The luminescence peak at about 480 nm, with lifetime of about 0.25 ns, can be attributed to the luminescence of carboxylate ions existing in bulk of anodic alumina.