YAG:Ce and YAP:Ce – Suitable Fast Detectors for Transmission Mössbauer Spectroscopy

Yttrium aluminum garnet and perovskite activated by cerium are fast mechanically and chemically resistant scintillation materials. Their mechanical properties enable easy and precise machining. Both scintillation materials have a decay time shorter than 100 ns and, therefore, are suitable to use for high counting rates. The luminescence maximum of YAP:Ce and YAG:Ce are 360 and 550 nm, respectively. Their luminescence bands correspond with the sensitivity spectral range of the most widely used photomultipliers. Moreover, the semiconductor light detectors can be used with YAG:Ce scintillation crystals. Theoretical and experimental comparative analysis of characteristics for both YAP:Ce and YAG:Ce detectors and good experience over relatively long periods of using these detectors allow us to draw a conclusion regarding their unconditional advantages over other commonly used detectors for transmission Mössbauer spectroscopy. The considerable improvement in data production enhances the capabilities of Mössbauer spectroscopy as a research and analytical tool.     

LED白光源用Pr~(3+),Ce~(3+):YAG光纤制备与特性

采用激光加热基座法制备LED白光源用Pr3+,Ce3+:YAG单晶光纤荧光材料,对所制备材料的荧光光学特性进行了实验分析结果表明,在Pr3+和Ce3+共掺发光过程中,Pr3+离子的发光可以通过Ce3+敏化作用使得其610 nm谱线荧光强度得到有效增强;利用所制备Pr3+,Ce3+:YAG单晶光纤荧光材料与蓝色LED合成产生高效LED光纤白光源,光源的色坐标为(x＝0.322,y＝0.335),显色指数84.3,表明光源品质良好,有望用于未来高效大功率光纤白光源.     

射频超导腔加速性能的改进

为提高超导加速腔的加速梯度和Q值，改进了薄膜型超导腔的加速性能。研究证明，对于铜铌溅射腔，在无氧铜衬底和铌膜之间加入NbN 层可以提高铌膜的超导转变温度，改善晶格结构；对纯铌超导腔提出了改进方法，在传统的纯铌超导腔表面制备多层的超导-绝缘-超导复合膜可以屏蔽Nb腔表面的界面场，提高超导腔的临界磁场，从而提高了铌腔的加速梯度。     

Growth and spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) photorefractive crystals

RE, Mn:YAP (RE=Yb and Ce) crystals with dimension of Φ 25×60 mm were successfully grown by the Czochralski method. The spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) crystals before and after γ-irradiation were investigated at room temperature. The results show that the content of Mn⁴⁺ ions was increased with the Yb³⁺ ions co-doping, but decreased by Ce³⁺ ions co-doping. Thermoluminescence (TL) spectra of the crystals indicate three steps of recombination, and the probable recombination processes were discussed.     

Ce~(3+)注入对超晶格中硅纳米晶光致发光强度的影响

研究了铈离子注入和二次退火等因素对硅纳米晶(nc-Si)发光强度的影响.利用电子柬蒸发以及高温退火得到nc-Si/SiO2超晶格结构.随后将该结构样晶分别注入2.0×1014cm2和2.0×1015cm-2剂量的铈离子(Ce3+),再分别以不同温度对其进行二次退火,获得多种样品.通过对样品光敏发光光谱的分析发现,Ce3+注入后未经过二次退火的样品发光强度急剧下降.二次退火后的样品,随着退火温度的升高,样品的光致发光灶度逐渐增强,但当温度超过600℃时,发光强度反而下降,600℃为二次退火的最佳退火温度.注入适当剂量的Ce3+,其发光强度可以超过未注入时的发光强度,Ce3+的注入存在饱和剂量.研究表明,样品发光强度的变化受到铈离子注入剂量和注入后二次退火温度等因素的影响,并且存在着Ce3+到nc-Si的能量传递.     

A single wavelength 1339 nm Nd:YAP pulsed laser

The laser oscillating at a weak line of Nd:YAP around 1.3-μm realized though selecting polarization is described. The energy level transitions of Nd:YAP crystal and their polarization properties were analyzed. A thin-film polarizer was adopted to restrain the oscillating of the c-axis strong polarized spectral lines and a reasonable transmittance was designed to suppress the a-axis polarized 1064 nm strong line lasing, and then a-axis polarized 1339 nm pulse laser of 336 mJ for free running mode and 64 mJ for electro-optic Q-switched mode were successfully achieved, corresponding to pulse widths of 180 μs and 35 ns, respectively. This method of selecting polarization to realize weak line oscillating is significant for anisotropic laser crystals doped with Nd³⁺ ions to select the particular transitions.     

Laser properties of coactivated YAP: Nd free of colour centres

YAP:Nd, Cr grown under Ar-H₂ or Ar-He-H₂ atmosphere possesses good energy transfer from Cr³⁺ to Nd³⁺ but suffers from the colour centre formation. The centre formation was completely prevented using further admixture of Ce³⁺ and 10^–4–10^–3 wt. % Fe. Small luminescence quenching of Cr³⁺ or Nd³⁺ due to iron ions is negligible in the presence of Ce³⁺. The crystals may be also heavily doped with Nd³⁺ because the increased pumping efficiency compensates the shortening of the luminescence lifetime. YAP: Nd, Ce, Cr, Fe is advisible active laser material particularly for all the types of pulsed lasers.     

Investigation on a colliding pulse mode-locking(Ce~(3 ),Nd~(3 )):YAG laser using an unstable resonator

An investigation on the characteristics of a passive colliding pulse mode-locking(Ce~(3 ),Nd~(3 )):YAG laser using an unstable resonator containing an antiresonant ring hasbeen completed.Using a Ф3×40mm active medium and the pentanethine cyanine dissolved in1,2-dichloethane as a saturable absorber,9 picosecond pulse-width and 3.2 mJ output energywere obtained.The optimum initial transmission of the absorbing cell was determined.     

氧对LaOX：Ce3+和MFX：Ce3+体系猝灭作用的光谱研究

本文首次报道了LaOX:Ce3+和MFX:Ce3+(X=Cl-,Br-;M=Ba2+,Sr2+系列的光声光谱特性,并通过与荧光光谱的对照研究,讨论了氧对Ce3+在MFX和MF2(M=Ba2+,Sr2+基质中发光的猝灭作用.发现样品的发光随灼烧时间的加长而减弱,光声信号却依次增强,表明空气中氧对Ce3+发光的猝灭表现在其无辐射跃迁几率增加.同时发现由于非氟卤素的引入,便得MFX:Ce3+比MF2:Ce3+的抗淬灭性增强.文中着重研究了Ce3+在MFX基质中的发光,结果表明,在无氧合成条件下,MFX:Ce3+中Ce3+以发光中心Ⅱ(420nm附近)为主.     

LD侧面抽运Nd:YAP腔内三倍频蓝光激光器

研制了一台LD侧面抽运Nd:YAP腔内三倍频447.1 nm脉冲蓝光激光器.采用列阵高频激光二极管侧面抽运Nd:YAP晶体,使用V型折叠腔,LN晶体电光调Q,输出高峰值功率的1 341.4 nm偏振基频光.选取KTP晶体Ⅱ类临界相位匹配倍频,获得670.7 nm红光.使用LBO晶体Ⅰ类临界相位匹配把670.7 nm的倍频光与1 341.4 nm的基频光进行和频,获得三倍频447.1 nm的蓝光输出.实验结果表明：优化后的V型折叠腔,可提高非线性转换效率,在平均抽运功率92.4 W时,获得了平均功率887 mW、峰值功率17.7 kW、脉宽50 ns的偏振蓝光输出,光-光转换效率为0.96%.     

Spectral and laser properties of YAP:Nd grown in reducing atmosphere

YAP:Nd crystals grown from the melt in molybdenum crucible under reducing (He-Ar-H₂) protective atmosphere contain growth colour centre (brown appearance) due to surplus of metal ions. The colouration may be irreversibly removed by annealing at 1200 °C. Oxygen annealed crystals are improper as a laser active material because of colour centre formation (reddish appearance) which is substantially strenghtened by the pumping light. This phenomenon is connected with the presence of molybdenum (5 ppm) in a higher valence state. On the other hand the same crystals treated in vacuum or hydrogen need a limited filtration of the pumping light (up to 280–320 nm), to exclude detrimental role of iron impurity and they may be succesfully used in continuous and particularly in pulsed lasers. No ageing or erratic performance was found in the lasers using such crystals.     

1.34μmNd：YAP激光器的被动锁模

演示了氙灯泵浦的Nd:YAP激光器在波长1.34μm处的被动锁模,利用染料BDN-3e溶解于二甲亚砜作为可饱和吸收体,获得了波长为1.34μm的被动锁模脉冲序列输出.锁模脉冲序列的总能量达到2.2mJ,每个脉冲的平均脉宽为120ps.     

带抗共振环的非稳腔对撞脉冲锁模Nd:YAP(Nd:YAL0_3)激光器

本文报道用Nd:YAP (Nd:YALO_3)激光介质在带抗共振环的平-凸非稳腔结构中,选用五甲川-1,2-二氯乙烷染料,实现对撞脉冲被动锁模,获得良好锁模脉冲波形的实验结果.在1Hz的重复频率下,锁模脉冲平均脉宽<10ps,输出脉冲系列平均能量80mJ,脉冲系列能量集中于中央的三个脉冲,锁模成功率100%.输出能量稳定性80±4mJ.     

Nd3+:Er3+:KY(WO4)2激光晶体的生长和光谱特性

采用熔盐法从K2 WO4助熔剂体系生长出尺寸为 4 5mm的Nd3 :Er3 :KY(WO4) 2 透明晶体。从晶体中切割出Ф3× 11 9mm的激光器件 ,测量了晶体的紫外 -近红外的吸收光谱 ,从吸收光谱图上可以看到 ,晶体存在着 974 88nm ;80 1 0 (798 12 ,80 3 95 )nm ;74 8 5 (75 3 5 ,74 3 4 9)nm ;6 5 3 6 1nm ;5 86 6 5nm ;5 18 6(5 4 5 0 3,5 2 1 32 ,4 89 35 )nm ;4 5 2 80nm ;4 0 7 81nm ;36 7 2 2 (377 2 4 ,36 6 4 ,35 8 0 2 )nm九个吸收峰带 ,对各个吸收峰带按照Er3 和Nd3 离子的能级跃迁进行了归属。同时采用Edinburgh InstrumentF92 0荧光光谱仪在室温下对晶体进行了荧光测试研究。研究结果表明 ,共掺Nd3 离子可以增强Er3 :KY(WO4) 2 对半导体激光器泵浦源 (80 0nm)的吸收。     

Radiation induced colour centers and damage in YAlO 3 :Ce and YAlO 3 :Ce,Zr scintillators

Radiation induced absorption spectra (irradiation up to 500 v Gy by 60 Co) and TSL of a set of YAP:Ce crystals co-doped by Zr 4+ were investigated. Positive effect of Zr 4+ co-doping was found, namely reduction of both the defect creation and presence of TSL active traps. Up to three absorption bands were observed in the radiation induced absorption spectra. They probably have different origin - from colour centers in the green part of the spectra to change of the Ce 3+ valency in the near UV.     

Absorption background and laser properties of YAP:Nd

YAP:Nd laser crystals suffer to a greater extent than YAG:Nd from colour centres formation. Stable brownish-yellow or green colourations are evoked by non-oxidizing treatment at high (>1500 °C) temperature. The former colouration may be attributed to holes in the oxygen neighbourhood of Y³⁺ at Al sites, the latter to the F⁺ centres. Brownish-red colouration of less stability is induced by optical pumping of Nd³⁺ containing crystals. It may be attributed to holes in oxygen neighbourhood of Nd³⁺.Dependences of the colourations on the preparation methods are described. YAP:Nd,Zr laser rods, oxygen annealing of which was followed by medium (1100–1400 °C) temperature treatment in vacuum or hydrogen showed no anomalous colouration and extremely low losses at Nd³⁺ emission wavelength independent of pumping power. Using such rods, an overall efficiency of 2·5% and a slope efficiency of 3·0% in CW lasers were reached.     

Growth of YAP in reducing conditions

Growth of the perfect YAP crystals up to 35 mm in diameter and 185 mm in length is described. The decomposition of the crystal and the iron content were suppressed by using of Ar-He-H₂ protective atmosphere and negatively charged electrode above the melt level. The shape of solid-liquid interface is connected with optical homogeneity of the crystals. It may be controlled by the Ar: He ratio. The comparison with the crystals grown in vacuum is given.     

Nonvolatile photorefractive holographic recording in Sc:Ce:Cu:LiNbO3

In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO₃ crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO₃ crystals were grown by the Czochralski method and oxidized in Nb₂O₅ powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO₃ crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO₃ crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO₃ and Ce:Cu:LiNbO₃ crystals.     

Nd^3＋：YAlO3晶体折射率温度系数的表示式

建立了Nd~(3+):YAlO_3(Nd:YAP)晶体折射率温度系数的表示式,该式得到的结果与测量值间具有较好的一致性。利用这个式子可以计算0.5398μm～1.0795μm波长范围311K～455K温度范围内Nd:YAP晶体的折射率温度系数。     

Ce~(3+)、Tb~(3+)在SrZnP_2O_7材料中的发光及能量传递

采用高温固相法制备了Ce3+、Tb3+激活的SrZnP2O7材料,并研究了材料的发光性质。在290 nm紫外光激发下,SrZnP2O7∶Ce3+材料的发射光谱为双峰宽谱,主峰位于329 nm。SrZnP2O7∶Tb3+材料的发射光谱由420,443,491,545,587,625 nm六个峰组成,分别对应Tb3+的5D3→7F5、5D3→7F4、5D4→7F6、5D4→7F5、5D4→7F4和5D4→7F3特征发射;监测545 nm最强发射峰,所得激发光谱覆盖200~400 nm,主峰为380 nm。研究了Ce3+、Tb3+在SrZnP2O7材料中的能量传递过程,发现,Ce3+对Tb3+具有很强的敏化作用,提高了SrZnP2O7∶Tb3+材料的发射强度,当Ce3+摩尔分数为3%时,SrZnP2O7∶Tb3+材料的发射强度提高了近2倍。引入电荷补偿剂可提高SrZnP2O7∶Tb3+材料的发射强度,其中以掺入Li+和Cl-时效果最明显。