Modification of the dielectric properties of copper-doped CdIn2S4 single crystal

The study of the dielectric properties of a CdIn₂S₄〈3 mol % Cu〉 single crystal in alternating-current (ac) electric fields with frequencies f = 5 × 10⁴?3.5 × 10⁷ Hz has revealed the origin of dielectric loss (relaxation loss that is changed by the through current loss at high frequencies). It has been found that CdIn₂S₄〈Cu〉 has permittivity increment Δ?′ = 123, relaxation frequency f _r = 2.3 × 10⁴ Hz, and relaxation time τ = 43 μs. The doping of CdIn₂S₄ single crystal with copper (3 mol %) is established to substantially increase the permittivity (?′), dielectric loss tangent (tanδ), and ac conductivity (σ_ac). In this case, the frequency dispersion of ?′ and tanδ increases and that of σ_ac decreases.     

Landau theory of the isotropic-nematic critical point

Landau theory is used to analyze the effect of an applied on nematics with positive dielectric (or diamagnetic) anisotropy. Analytic results are given for the phase boundary, stability limits, and location of the critical points in the field-temperature phase diagram. For biphenyl compounds having a dielectric anisotropy ?_a≈10, it is argued that the critical point should occur at E_c≈10² kV/cm, which is experimentally accessible.     

Dielectric relaxation in SrTiO<Subscript>3</Subscript>: Mn

Dielectric relaxation (activation energy U≈0.03 eV, relaxation time τ₀≈5×10^?11 s) has been observed in SrTiO₃: Mn solid solutions at low temperatures. It is assumed that the relaxation is related to reorientation of the polarons localized at defects of the {Mn _Ti ²⁺ -O^?} type and that the deviations from classical thermally activated behavior at the lowest temperatures reached are due to the quantum tunneling mode.     

Origin of dielectric relaxations in KHSeO4 above room temperature

The dispersion curves of the dielectric response for KHSeO₄ were obtained in the radio frequency range at several isotherms below the fast proton conducting phase (T?<?415 K). The results reveal a distinct dielectric relaxation at low frequency, which is about 682 Hz at 320 K, and then, it shifts to higher frequencies (～10 kHz) as the temperature increases. The f _max vs. reciprocal T shows an activated relaxation process with an activation energy of 0.5 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be attributed to polarization induced by the proton jump and selenate tetrahedral reorientations. The displacement of mobile H⁺ proton accompanied by SeO ₄ ^??2 tetrahedra reorientations creates structural distortion in both sublattices which induce localized dipoles like HSeO ₄ ^? .     

Dielectric,electrical transport and magnetic properties of Er3+substituted nanocrystalline cobalt ferrite

Erbium substituted cobalt ferrite (CoFe_2−xEr_xO₄; x=0.0–0.2, referred to CFEO) materials were synthesized by sol-gel auto-combustion method. The effect of erbium (Er³⁺) substitution on the crystal structure, dielectric, electrical transport and magnetic properties of cobalt ferrite is evaluated. CoFe_2−xEr_xO₄ ceramics exhibit the spinel cubic structure without any impurity phase for x≤0.10 whereas formation of the ErFeO₃ orthoferrite secondary phase was observed for x≥0.15. All the CFEO samples demonstrate the typical hysteresis (M–H) behavior with a decrease in magnetization as a function of Er content due to weak superexchange interaction. The frequency (f) dependent dielectric constant (ε′) revealed the usual dielectric dispersion. The ε′–f dispersion (f=20 Hz to 1 MHz) fits to the modified Debye's function with more than one ion contributing to the relaxation. The relaxation time and spread factor derived are ∼10⁻⁴ s and ∼0.61(±0.04), respectively. Electrical and dielectric studies indicate that ε′ increases and the dc electrical resistivity decreases as a function of Er content (x≤0.15). Complex impedance analyses confirm only the grain interior contribution to the conduction process. Temperature dependent electrical transport and room temperature ac conductivity (σ_ac) analyses indicate the semiconducting nature and small polaron hopping.     

Dielectric relaxation and ferroelectricity in Cd2Nb2O7 pyrochlore

The dielectric dispersion of Cd₂Nb₂O₇ pyrochlore in a weak electric field was studied in a broad frequency range (100 Hz to 13 MHz) using the crystal samples slowly cooled (0.5 K/min) in the temperature interval from 300 to 80 K. As the temperature decreased down to T _c=196 K and T _max～190 K, the dielectric permittivity exhibited deviation from the Curie-Weiss law. It is suggested that this behavior is related to the development of a short-range correlation between microscopic polar regions formed at T→T _max ⁺ . The local order parameter q(T) ～ 〈P _i P _j 〉^1/2 was calculated using the permittivity ε′(T) measured at various frequencies. The variation of this parameter is compared to that of the spontaneous polarization P _s (T) determined from the measurements of a pyroelectric current in the external electric field E _dc =0.95 kV/cm. In the frequency range from 100 Hz to 13 MHz, the dispersion of the dielectric response in the temperature region of 180–192 K is characteristic of a relaxator ferroelectric featuring a glasslike behavior. The parameters of this state were determined, including the activation energy of the polarization fluctuations (E _a ≈0.01 eV), the relaxation rate at T → ∞ (f ₀=1.9×10¹² Hz), and the polarization fluctuation freezing temperature (T _f =183 K). In Cd₂Nb₂O₇ pyrochlore, in contrast to the known relaxator ferroelectrics of the PMN type studied previously, this state coexists with the normal ferroelectric state appearing at T _c.     

Dielectric losses in statistical mixtures

The specific features of the dielectric spectra of statistical mixtures in the form of heterogeneous systems with spherical particles chaotically arranged in the space have been investigated. The distribution function of relaxation times f(τ) has been restored. It has been established that the relaxation times are continuously distributed within a wide interval [τ₁, τ₂]. Different methods for broadening the relaxation time distribution interval and approximating the relaxation time distribution function f(τ) have been analyzed. It has been demonstrated that f(τ) is a nonmonotonic function with two maxima at the boundaries and a minimum in the vicinity of the midpoint of the interval [τ₁, τ₂]. These features of the relaxation time distribution function are responsible for the large difference between the average relaxation frequencies of the permittivity and the dielectric loss (electrical conductivity).     

Frequency dispersion of the dielectric characteristics in polymer films based on the [NiSalen] complex

The results of the measurements of the dielectric properties exhibited by metal-containing polymer structures based on Ni(II) complexes in the frequency range f = 10²–10⁵ Hz are reported. It is established that, in the range of acoustic frequencies, the permittivity ε decreases with increasing frequency, whereas the dielectric loss tangent tan δ increases. At frequencies f > 10⁴ Hz, the dependence tan δ(f) is characterized by a relaxation maximum. The possible mechanisms of dielectric polarization and charge transfer in an alternating-current electric field are considered.     

Study of dipole dynamics and pre-transitional effects at isotropic to nematic phase transition by low-frequency dielectric relaxation measurements

Thermal microscopy (TM) as well as low-frequency (LF) dielectric relaxation studies are carried out on a nematic liquid crystal (NLC), viz E7 (Merck Ltd, UK). The isotropic to nematic (IN) transition temperatureT _IN determined by TM and LF-dielectric permittivity measurements agrees with the available data. Dielectric loss studies in the frequency region of 5–10?MHz indicate a relaxation (in the kHz region) akin to Debye type off-centered dispersion. The observed nematic relaxation is found to correspond to reorientation (about the short axis) of the nematic dipole to the external field. The temperature variation of the nematic relaxation frequencyf _R is found to follow an Arrhenius shift, with an activation energy of 1.7?eV. Temperature variation of the dielectric strength (Δε = ε _o ? ε_∞) and the distribution parameter α in the nematic phase are discussed. The dynamic response of the nematic dipoles and growth of pre-transitional fluctuations are found to be nonlinear in the vicinity of the IN transition. The value of the exponent α_eff = 0.072 indicates weak growth of transitional fluctuations across the IN transition.     

The Mechanism of 4f-5d hybridization in Sm1−x R x S (R=Ce, Gd, and Y) systems with intermediate valence

For Sm_1?x R _x S (R=Ce, Gd, Y) systems with intermediate valence, the population of Sm 4f states (valence) and populations of Ce 5d, Gd 5d, and Y 4d states are determined by the method of x-ray line displacement. It is found that, in all the systems under investigation, the valence of Sm upon transition to the intermediate valence state increases from m≈2.5 (x≈0.15–0.25) to m≈2.65 (x≈0.8) and then decreases. The populations of Ce, Gd, and Y d states remain nearly constant over the entire region of compositions: $\bar n_d = 0.78 \pm 0.03,0.43 \pm 0.04$ , and 1.07±0.04 for Ce, Gd, and Y, respectively. The experimental dependence of the Sm valence on the composition is explained under the assumption that the 4f electron of an Sm atom can be hybridized through two channels, namely, with the 5d electron of the neighboring Sm atom and with its own 5d electron.     

Low frequency dielectric relaxation in lightly doped VO2 single crystals

The relative effects of intrinsic and extrinsic defects on the dielectric relaxation of VO₂ crystals have been investigated by measurement of the dielectric parameters of undoped crystals and crystals doped with Ti, Cr and Al. Measurements have been made in the temperature range 77–250 K and the frequency range 50–100 kHz. The dielectric data is described by a Cole-Cole distribution function with a distribution parameter α ? 0.45 which decreases with increasing temperature. However, the distribution of activation energies g(E) derived from α is almost independent of temperature. The overall dielectric relaxation behaviour is determined primarily by the intrinsic defect structure of VO₂, and the effect of impurities is observed only in changes in the low frequency limiting (static) value of the dielectric constant. The same transport mechanism is found to determine the dc conductivity and the dielectric relaxation and evidence is presented that the dielectric relaxation is of dipolar origin.     

Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices

This paper is devoted to the study of the electrical properties of Au/HfO₂/TiN metal–insulator–metal (MIM) capacitors in three distinctive modes: (1) alternative mode (C–f), (2) dynamic regime [thermally stimulated currents, TSCs I(T)] and (3) static mode [I(V)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency C–f characteristic possesses a low-frequency dispersion that arises for high temperature (T > 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy E _a ~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C (E _a ~ 1 eV) is in agreement with impedance spectroscopy (C–f). On the other hand, when the MIM structures are analyzed in static mode, the I–V plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.     

Dielectric parameters in Se70Te30 and Se70Te28Zn2 chalcogenide glasses

Temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε″) are studied in glassy Se₇₀Te₃₀ and Se₇₀Te₂₈Zn₂. The measurements have been made in the frequency range (8-500 kHz) and in the temperature range 300 to 350 K. An analysis of the dielectric loss data shows that the Guintini's theory of dielectric dispersion based on two-electron hopping over a potential barrier is applicable in the present case.No dielectric loss peak is observed in glassy Se₇₀Te₃₀. However, such loss peaks exist in the glassy Se₇₀Te₂₈Zn₂ in the above frequency and temperature range. The Cole-Cole diagrams have been used to determine some parameters such as the distribution parameter (α), the macroscopic relaxation time (τ₀), the molecular relaxation time (τ) and the Gibb's free energy for relaxation (ΔF).     

Magnetic properties and peculiarity of magnetic states in dilute antiferromagnets Mn1−x Zn x F2

The dependence of magnetic moment and susceptibility on temperature, magnetic field and frequency of some single crystals Mn_1?x Zn _x F₂ (x≈x _e=0.75—percolation limit) were experimentally investigated. Our experiments show that (Bazhan and Petrov 1984; Cowleyet al 1984; Villain 1984) in these crystals the nonequilibrium magnetic state of spinglass type with finite correlation length appears as temperature decreasesT<T in weak magnetic fields. This state is determined by fluctuation magnetic moments √nμ (wheren is the number of magnetic ions, corresponding to finite correlation length andμ the magnetic moment Mn⁺¹). In the experiments in low magnetic fields and frequencies there are no peculiarities in the magnetic susceptibility temperature dependence atT≠T _f. At temperaturesT>T _f andT<T _f magnetic susceptibility is determined by 1 $$\chi \left( {T > T_f } \right) = \frac{{N\left\langle \mu \right\rangle ^2 }}{{3k\left( {T + \theta } \right)}} = \frac{N}{n}\frac{{\left\langle {\sqrt n \mu } \right\rangle ^2 }}{{3k\left( {T + \theta } \right)}} = \chi \left( {T< T_f } \right)$$ . In strong magnetic fields and large frequencies there are peculiarities in thex(T) dependence atT=T _f. AtT<T _f and strong magnetic fieldsX(T)=x ₀ andT<T _f and at large frequenciesx(T)=x ₀+α/T. The dependences of magnetic susceptibility on the frequency are determined by the magnetic system relaxation. Calculations and comparison with experiments show that the relaxation of the investigated magnetic systems atT<T _f follows the relaxation lawM(t)=M(0) exp[?(t/τ) ^r ], suggested in Palmeret al (1984) for spin-glasses relaxation taking into account the time relaxation distributionτ ₀....τ _max in the system and its ‘hierarchically’ dynamics.     

Low-frequency dielectric relaxation (1/<Emphasis Type="Italic">f</Emphasis> noise) in relaxors of the (1 − <Emphasis Type="Italic">x</Emphasis>)PMN-(<Emphasis Type="Italic">x</Emphasis>)PZT system

The dielectric properties of relaxor ferroelectric ceramics (1 ? x)PbMg_1/3Nb_2/3O₃-(x)PbZr_0.53Ti_0.47O₃ (PMN-PZT) have been studied at frequencies from 40 Hz to 1 MHz in the temperature range of the diffuse phase transition. It is established that the dielectric relaxation generates 1/f noise, whose spectral density depends on the relaxor composition and temperature.     

Magnetic-field-induced slowing-down of molecular rotation in C<Subscript>60</Subscript> crystals

The molecular dynamics of C₆₀ crystals was studied by inelastic neutron scattering at T=290 K, i.e., above the first-order phase transition temperature (T_C≈260 K), in the region of free C₆₀-spheroid rotation in the lattice. The energy broadening of the original neutron spectrum 2Γ₀≈0.1 meV for a momentum transfer q=2 Å^?1 is in agreement with NMR data on the rotational relaxation time of the molecule τ～10^?11 s～ ?Γ₀. This effect was observed to decrease in magnetic fields H=2.5–4.5 kOe applied along the scattering vector: Γ_H=0.7Γ₀. The slowing-down of the molecular rotation is discussed in connection with the interaction of a magnetic field with the molecular currents, which fluctuate when the C₆₀ cage rotates.     

Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature

The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO₃ ∥ (100)Ba_0.75Sr_0.25TiO₃ ∥ (001)SrRO₃ heterostructure grown by laser ablation on (001)La_0.294Sr_0.706Al_0.647Ta_0.353O₃ were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba_0.75Sr_0.25TiO₃ layer increased approximately linearly with decreasing temperature in the interval 320–200 K. The real part of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ?′/?₀=4400 at T _M≈285 K (f=100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba_0.75Sr_0.25TiO₃ ferroelectric layer, observed for T<T _M, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.     

Low temperature polarization effects in ice

When an initially unpolarized HF doped ice specimen is warmed at a constant rate in an applied electric field two peaks are observed in the current. The low temperature peak occurs near 100°K and the temperature at which this peak occurs is seen to increase as the HF concentration decreases. The second peak appears to occur randomly in the temperature range 125–135°K. These peaks are also observed if the sample is cooled in an applied electric field and then warmed at a constant rate with the field removed. It is suggested that the first peak is due to a dielectric relaxation process which is governed by the L defects released from the HF molecules. This release of L defects is shown to obey the law of mass action with an activation energy for liberation of an L defect of 0.12±0.06 eV and a dissociation constantk _o ^L≈10²⁹ m^?3. A simple theoretical model of ice is also developed which predicts the current reversal phenomenon observed by Dengelet al. [11] suggesting that it is due to dipole relaxation and not to ferroelectric ordering.     

Static and dynamic behavior of the cluster phase in LaMn0.6Co0.4O3

A non-uniform magnetic state in the perovskite system LaMn_0.6Co_0.4O₃ has been studied by magnetometric methods. Two ferromagnetic (FM) critical temperatures are observed. The first one at T_C1≈217 K is ascribed to the onset of FM state in the Mn⁴⁺/Co²⁺-ordered domains (phase 1), while the disordered regions containing Mn⁴⁺, Mn³⁺, Co³⁺ and Co²⁺ valence states (phase 2) remain in the paramagnetic state. Below T_C2≈147 K a long-range FM arrangement develops also in certain part of phase 2, but the major part of phase 2 is formed by polydisperse FM clusters. This second transition is accompanied by a huge increase of coercivity and by occurrence of long-time relaxation. Finally, between 40 and 65 K, a frequency-dependent maximum in the imaginary part of the ac susceptibility is observed, which can be ascribed to the relaxation of small clusters behaving superparamagnetically.     

Inflation of fireballs, the gluon wind and the homogeneity of the HBT radii at RHIC

We solve analytically the ellipsoidally expanding fireball hydrodynamics with source terms in the momentum and energy equations, using the non-relativistic approximation. We find that energy transport for high-p _tjets of gluons to the medium leads to a transient, exponential inflation of the fireballs created in high energy heavy ion collisions. In this transient, inflatory period, the slopes of the single particle spectra are exponentially increasing, while the HBT radius parameters are exponentially decreasing with time. This effect is shown to be similar to the development of the homogeneity of our Universe due to an inflatory period. Independently of the initial conditions, and the exact value of freeze-out time and temperature, the measurables (single particle spectra, the correlation functions, slope parameters, elliptic flow, HBT radii and cross terms) become time-independent during the late, non-inflatory stages of the expansion, and they satisfy a new kind of scaling laws. If the expansion starts with a transient inflation caused by the gluon wind, it leads naturally to large transverse flows as well as to the simultaneous equality, and scaling behaviour of the HBT radius parameters, R _side≈R _out≈R _long≈t _f √T _f /m. With certain relativistic corrections, the scaling limit is 281-2, where m _tis the mean transverse mass of the pair.