Dynamic Alignment of D2 Enhanced by Two Few-cycle Pulses

利用数值方法求解D2分子刚性转子模型在超短飞秒激光脉冲作用下的薛定谔方程,计算了双原子分子D2在两束固定强度的飞秒激光脉冲作用下,延迟时间对于分子取向的影响.结果表明,只要选取合适的延迟时间,就能很好改善分子取向;保持两束激光强度不变,通过调整两束脉冲的宽度,选择合适的延迟时间能够进一步有效提高D2分子的取向程度.     

Upconversion from the I13/2 and I11/2 levels in Er:YAG

The efficiency of erbium three-micron laser (laser transition ⁴I_11/2→⁴I_13/2) depends essentially on the ratio of the parameters of active energy transfer upconversion (ETU) from the laser levels. The parameters of both ETU processes can be obtained from the analysis of the shape of the kinetics of the ⁴I_11/2 level in concentrated Er:YAG crystals, under short pulse pumping. Mathematical modeling is used to evaluate the sensitivity of the method and to estimate the errors which can be introduced by the inhomogeneous pumping and accidental impurities. It was found that the ratio of the parameters corresponding to the ETU from the laser levels is less sensitive to the pumping inhomogeneities than that corresponding to the lower laser level. A reduction of this ratio with increasing erbium concentration is observed.     

正交双色场中氢分子非次序双电离的研究

利用经典系综模型,研究了正交双色场作用下氢分子非次序双电离中双电离电子的相关特性.结果表明,双电离电子相关动量谱强烈地依赖于正交双色场的相对相位.通过改变正交双色场的相对相位,相关动量可以从反相关模式转变为相关模式.向后分析表明,相关电子动量谱对双色场相对相位的依赖关系起源于碰撞过程中碰撞电子碰撞角和碰撞动量对相对相位...     

RHEED and Auger study of the MoO3(010) surface interaction with H2S/H2 mixture and pure H2S

Pure single crystals of MoO₃ were carefully grown by physical vapor transport. The initial stages of the interaction of H₂S with a MoO₃ (010) surface were studied by RHEED and AES at low pressure p <133 Pa and at T < 700 K. Three main stages were found: (a) The formation of either a completely disordered sulphur adiayer (with pure H₂S) or a superstructure MoO₃(010)-[2 × 1]S (with H₂S/H₂). (b) A reduction of MoO₃ producing oriented three-dimensional MoO₂ islands, (c) An epitaxial overgrowth of MoS₂ from the MoO₂ three-dimensional crystallites.     

对称性对总自旋为1/2的三费米体系结构的影响

揭示了量子力学对称性对总自旋s为1/2的三费米子体系结构的决定性影响.     

使用斯塔克诱导的绝热拉曼通道技术实现D2分子的高效相干布居转移

使用斯塔克诱导的绝热拉曼通道技术,成功地将分子束中的D₂分子从(v=0, J=0)转移至(v=1, J=0). 激发效率达到了75%.该技术将为交叉分子束和分子束-表面散射实验研究氢分子的振动激发对化学反应的影响提供一个独特的工具.     

The microwave spectrum of thioformaldehyde,CD2S,and CH2S: Average structure,dipole moments,and 33S quadrupole coupling

Microwave transitions up to J = 53 in the ground vibrational state of deuterothioformaldehyde, CD₂S, were studied between 8 and 40 GHz. A detailed centrifugal distortion analysis yields accurate constants for comparison with force field values. The isotopic species ¹³CH₂S, CH₂³⁴S, CH₂³³S, ¹³CD₂S, CD₂³⁴S, and CD₂³³S were studied in natural abundance. Accurate average zero-point structures were determined for both CD₂S and CH₂S:

$\text{CH}{}_2\text{S}\text{CS}\text{=1.6138(4)}\text{CH}\text{= 1.0962(6)}\text{A}\text{?}\text{∠}\text{HCH}\text{=116° 16(6)′,}\text{CD}{}_2\text{S}\text{CS}\text{=1.6136(4)}\text{CD}\text{= 1.0931(4)}\text{A}\text{?}\text{∠}\text{DCD}\text{=116° 25(5)′}$

Changes in the zero-point geometry for deuterium substitution were established. Quadrupole fine structure arising from the ³³S nucleus has been measured in CH₂³³S and CD₂³³S. Analysis gives the following coupling constants (for both molecules) as χ_aa = ?11.7 and χ_bb - χ_cc = 88.1 MHz. The dipole moment of CD₂S was measured to be 1.6588(8)D and an accurate comparison with CH₂S was made; the ratio of dipole moments $\text{CD}{}_2\text{S}\text{CH}{}_2\text{S}$ was found to be 1.0062(4). The spectroscopic and bonding properties of CH₂S will be compared with formaldehyde and other molecules.     

Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals

Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl₂Ga₂Se₃S layered single crystals in the temperature range of 10-260 K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The capture cross section and the concentration of the traps have been also determined. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light illumination temperatures. This experimental technique provided values of 10 and 88 meV/decade for the traps distribution related to two different trapping centers.     

Penning ionization electron spectroscopy of H2O,D2O,H2S and SO2

Electron energy peak shifts and peak shapes were determined in the ionization of H₂O, D₂O, H₂S and SO₂ by Ne(³P₂) and He(2¹S, 2³S) metastable atoms. The shifts are large, especially in ionization of H₂O and D₂O into the ionic ground state and are probably mostly due to chemical interaction during the collision.In a previous paper the electron energy distribution curves for ionization of CO, HCl, HBr, N₂O, NO₂, CO₂, COS and CS₂ by helium, neon and argon metastables and the characteristics of this ionization were described¹. In this paper the series of triatomic molecules was extended to the molecules H₂O, D₂O, H₂S and SO₂. Because all these molecules have considerable dipole moments it could be expected that the peak shifts might be enhanced as compared with other triatomic molecules.     

Adsorption of H2S,H2O and O2 on Si(111) surfaces

Electron energy-loss spectroscopy has been applied to the study of Si(111) surfaces covered with H₂S, H₂O and O₂ at room temperature and the surfaces annealed at ～ 600°C. The experimental results strongly suggest that H₂S and H₂O adsorb in the molecular states at room temperature. It is proposed that O₂ is first adsorbed in a molecular state, then adsorbs as atoms, and finally oxidizes forming SiO₂.     

Valence band photoemission study of the copper chalcogenide compounds, Cu2S, Cu2Se and Cu2Te

The electronic structures of the copper chalcogenide compounds, Cu₂S, Cu₂Se and Cu₂Te have been investigated by taking photoemission data with synchrotron photon sources. The band calculations are done using the full-potential linear-muffin-tin-orbital method. Since the crystal structures are not clarified well, several simplified structure models are used. The calculated densities of states are compared with the observed spectra. The analysis shows that a sharp peak at −3.5 eV is due to the Cu 3d states, and that the tails at the high and low energy sides of the Cu 3d peak are due to the chalcogen p states.     

Effect of rare earth (Pr2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3 and Er2O3 ) on the acoustic properties of glass belonging to bismuth-borate system

Bismuth-borate glasses doped with some rare earth ions were studied with respect to the density, molar volume and the elastic moduli, Poisson’s ratio, Debye temperature, microhardness, softening temperature, acoustic impedance, diffusion constant and latent heat of melting. Ultrasonic velocities were measured by the pulse echo overlap technique at a frequency of 10 MHz and at room temperature. From these velocities and density values, various elastic moduli were calculated. The correlation of elastic stiffness, the cross link density, and the fractal bond connectivity of these glasses are discussed. The derived experimental values of shear modulus, bulk modulus, Young’s modulus, and Poisson’s ratio for our glasses are compared with the theoretically calculated values in terms of the bond compression model and Makishima-Mackenize theory.     

掺杂离子对白色长余辉发光材料Y2O2S:Tb3+, Eu3+,M2+ (M=Mg,Ca, Sr,Ba),Zr4+性能的影响

采用高温固相法制备了白色长余辉发光材料Y₂O₂S:Tb³⁺, Eu³⁺,M²⁺(M=Mg, Ca, Sr, Ba), Zr⁴⁺, 利用X晶体衍射、发光光谱、余辉曲线和热释光曲线等对制备的材料进行表征。结果表明:掺杂离子没有改变样品晶体结构和发射峰的位置,但对其发光强度、余辉时间及陷阱深度有较大的影响。在263 nm紫外光的激发下,469 nm和626 nm的发射分别对应于Eu³⁺的⁵D₂→⁷F₀、⁵D₀→⁷F₂跃迁,544 nm的发射对应于Tb³⁺的⁵D₄→⁷F₅跃迁,主要通过它们的混合产生白光。掺杂不同二价离子样品的余辉性能按Mg²⁺、Sr²⁺、Ca²⁺、Ba²⁺的顺序递减,其中掺杂Mg²⁺的样品,色度坐标为(0.29,0.32),陷阱深度为1.17 eV,余辉时间长达320 s(≥1 mcd/m²),表现出最佳的发光性能。     

Dissociaton and energy transfer in molecular impact on surfaces: Experimental and theoretical studies of I2/Mg(100) and I2/sapphire

Solute segregation to antiphase boundaries (APBs) in long-range ordered alloys and its effects on antiphase domain coarsening kinetics have been investigated theoretically, and calculations have been carried out to model the structure and properties of APBs in B2-ordered FeAl alloys. Equilibrium segregation was studied by using the continuum diffuse-interface model of Cahn and Hilliard to calculate profiles of order parameter and composition, as well as interfacial free energy. The migration kinetics of APBs with segregation have been investigated theoretically for the low-velocity regime. A differential equation describing concentration deviations from the equiibrium profile is derived, and approximate solutions to the equation are determined to predict segregation profiles for migrating APBs in FeAl alloys. Measurements of domain coarsening kinetics in FeAl alloys are presented for a temperature range in which segregation was predicted theoretically. A marked slowing of domain coarsening kinetics in this range was observed.     

Microwave spectra of dimethylsulfide-d6, (CD3)2S,ground and excited torsional states

The microwave spectra of the molecular isotope (CD₃)₂S in the ground state and the first and second excited states of methyl top torsion (internal rotation) and of CSC deformation as well as the ground-state spectra of the ¹³C and ³⁴S substituted forms have been measured. The rotational constants and centrifugal distortion and rotation-vibration interaction constants could be determined. The rotational lines in the excited torsional states (1₁, 1₂, 2₁, 2₂, 2₃) were found to be split into quartets due to the interaction between molecular rotation and methyl top internal rotation. The experimental multiplet splittings were fitted to those calculated from a rotation-internal rotation Hamiltonian in order to obtain values for the internal rotation barrier V₃ and the top-top interaction potential coefficients V₁₂ and V′₁₂. V₁₂ was too highly correlated with V₃ for a separate determination. The values following from the least-squares adjustment are discussed.     

高压下Eu^3^＋：Gd2O2S的发射光谱,能级及晶体场

在室温下，０－１５ＧＰａ压力范围内，测量了Ｅｕ＾３＾＋：Ｇｄ２Ｏ２Ｓ的发射光谱。通过对７Ｆ０－６多重态能级结构的拟合，研究了压力对能级和晶体场的影响。     

Ga2O3组分对Tm3+掺杂GeO2-Ga2O3-Li2O-BaO-La2O3玻璃的光谱性能影响

制备了Tm³⁺(8.0mol%)掺杂(77-x)GeO₂-xGa₂O₃-8Li₂O-10BaO-5La₂O₃(x=4,8,12,16)系列玻璃.系统地研究了Ga₂O₃从4mol%变化到16mol%时,玻璃的光谱性质与热学性质的变化规律.差热分析表明,随着Ga₂O₃含量的增加,锗酸盐玻璃的热稳定性增加.运用Judd-Ofelt(J_O)理论计算得到了Tm³⁺在不同Ga₂O₃含量的GeO₂-Ga₂O₃-Li₂O-BaO-La₂O₃玻璃中的J-O强度参数(Ω₂,Ω₄,Ω₆)及Tm³⁺各激发能级的自发跃迁概率、荧光分支比以及辐射寿命等光谱参量.在808nm激光二极管的激发下,测试并分析了Ga₂O₃对Tm³⁺荧光光谱特性的影响.随着Ga₂O₃从4mol%增加到16mol%,Tm³⁺在1.8μm处的荧光强度呈现先减弱后增强的特性.当Ga₂O₃含量大约在12mol%时,Tm³⁺在1.8μm处的荧光强度最弱,受激发射截面达到最小.还初步讨论了Ga₂O₃对玻璃结构与光谱参数的影响规律. 关键词： 3+掺杂锗酸盐玻璃')" href="#">Tm³⁺掺杂锗酸盐玻璃 光谱性能 Judd-Ofelt参数 热稳定性     

Microwave spectroscopic study of the CO-H2S complex

Rotational spectra of the CO-H₂S complex were studied using a cavity Fourier transform microwave spectrometer. Altogether 16 isotopomers were investigated. The tunneling splitting due to interchange of the “bonded” and “non-bonded” hydrogen (deuterium) nuclei of the H₂S (D₂S) subunit was observed and analyzed. In addition, the nuclear quadrupole hyperfine structures due to the quadrupolar ³³S and ¹⁷O nuclei could be resolved and analyzed. The resulting rotational, tunneling, and hyperfine constants were used to derive structural and dynamical information about the complex.     

Surface chemistries of lithium: Detailed characterization of the reactions of H2S, SO2, and SO2Cl2 using XPS and EELS

The surface chemical reactions of clean lithium with H₂S, SO₂ and SO₂Cl₂ have been studied by a combination of XPS and EELS. The reactions with H₂S lead entirely to the formation of sulfide product layers, which propagate only to the extent of a few monolayers. The reactions with SO₂ are more complicated, the first monolayer consists of oxide and sulfide from the full dissociation of the SO₂ molecule. Subsequent reaction occurs to form sulfide, sulfite and SO₂ (ads), probably as the radical anion form. At exposures of SO₂ up to atmospheric pressure, the product layer composition, within the XPS sampling depth, becomes exclusively sulfite. The reaction with SO₂Cl₂ occurs along similar pathways. The first monolayer is exclusively the oxide, sulfide and chloride, while subsequent reactions occur to form sulfite and SO₂ (ads), in the presence of additional chloride. These studies are important first steps toward the understanding of electrochemical processes of these interfaces.