α-P/GaAs(100)界面的光电子能谱研究

本文采用X射线光电子能谱、紫外光电子能谱和低能电子衍射对室温下P在GaAs(100)表面上的生长进行了研究。结果表明,在生长初期P是成团吸附的,随着淀积量的增加而生长成α-P薄膜,该薄膜的价带结构与等离子体淀积的α-P:H薄膜的价带结构相似。在界面处有约一单层的P与衬底表面的Ga成键。α-P覆盖层使GaAs表面势垒下降约0.2eV。 关键词：     

Mn/GaAs(100)界面电子结构的同步辐射光电子能谱研究

利用同步辐射光电子能谱,研究了室温下在GaAs(100)表面上淀积的Mn的超薄膜的电子结构.实验发现,在θ<2ML的覆盖度下,Mn3d电子的能量态密度分布与体金属α-Mn差别很大当θ>2ML之后,便逐步接近α-Mn的体电子结构.这一结果可由Mn3d电子的自旋向上带和自旋向下带的交换分裂很好地解释.由此推断,当覆盖度θ<2ML时,在GaAs(100)表面上淀积的Mn的超薄膜具有磁有序结构 关键词：     

Fe/ZnO (0001)体系界面相互作用中薄膜厚度效应的光电子能谱研究

利用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)技术,系统研究了室温下Fe/ZnO界面形成过程中Fe薄膜与氧结尾的ZnO(000 1 )衬底之间的相互作用,结果显示初始沉积的Fe明显被表面氧氧化为Fe²⁺离子,在Fe覆盖度为0—3 nm的范围内,分别观察到与界面电荷传输、化学反应以及薄膜磁性相关的三个有意义的临界厚度,这一结果将有助于基于Fe/ZnO界面的相关器件的设计和研发. 关键词： Fe/ZnO 界面作用 同步辐射光电子能谱 X射线光电子能谱     

Fe/ZnO(0001)界面的同步辐射光电子能谱研究

利用同步辐射光电子能谱研究了Fe/ZnO生长模式、界面化学反应和电子结构.结果表明，Fe在ZnO(0001)表面以类SK模式生长(单层加岛状生长).当沉积约2?的Fe后，生长模式开始从二维层状生长转变成混合模式生长.界面价带谱和Fe3p芯能级谱的分析表明，在低覆盖度下，约有一个原子层(约1.5?)的Fe被ZnO(0001)面的外层O原子氧化，随着沉积厚度的增加，金属态Fe的信号逐渐增强.当吸附了5.1?的Fe时，出现了较强的金属Fe的Fermi边，说明出现了Fe的金属态.此外，在Fe原子吸附过程中，样品功函数在Fe厚度为0.2?时达到最小值4.5eV，偶极层形成后逐渐稳定在4.9eV.     

利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用.利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶.测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I的能带排列.利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb—O键(低结合能)和Pb—Te键(高结合能).在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中.该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.     

Fe/ZnO(0001-)界面的同步辐射光电子能谱研究

利用同步辐射光电子能谱研究了Fe／ZnO生长模式、界面化学反应和电子结构．结果表明，Fe在ZnO（0001^-）表面以类SK模式生长（单层加岛状生长）．当沉积约2A的Fe后，生长模式开始从二维层状生长转变成混合模式生长．界面价带谱和Fe3p芯能级谱的分析表明，在低覆盖度下，约有一个原子层（约1．5A）的Fe被ZnO（0001）面的外层0原子氧化，随着沉积厚度的增加，金属态Fe的信号逐渐增强．当吸附了5．1A的Fe时，出现了较强的金属Fe的Fermi边，说明出现了Fe的金属态．此外，在Fe原子吸附过程中，样品功函数在Fe厚度为0．2A时达到最小值4．5．eV，偶极层形成后逐渐稳定在4．9eV．     

Si/ZnS极性界面能带偏移的同步辐射光电子能谱研究

用同步辐射光电子能谱测量了Si/ZnS（111）及（100）异质结的价带偏移ΔE_v．对于Si/ZnS（111）及（100）两界面，ΔE_v的实验结果均为（1.9±0.1）eV，与已有理论预期值相当符合，但与Maierhofer所报告的ZnS/Si（111）异质结测量结果之间则存在明显差别．该实验结果表明对于Si/ZnS极性界面，互逆性规则（commutativity rule）可能不成立，就此进行了讨论． 关键词：     

用光电子能谱研究 Si/GaP(Ⅲ)异质界面的价带不连续性

介绍在改装的ADES-400型光电子能谱仪上,用Si电子束蒸发的方法生长Si/GaP(Ⅲ)界面的过程,并用光电子能谱原位地分析测量不同条件下生长的Si/GaP(Ⅲ)异质界面的形成状况和价带不连续值△E_v。讨论了△E_v与界面状况和原子能级变化的相互关系,确定了生长有序的突变Si/GaP(Ⅲ)异质界面的条件,得到此时界面的价带不连续值为0.80eV。它与理论计算值基本一致。 关键词：     

(Bi,Cd)Sr_2(Ln,Ce)_nCu_2O_y超导体及界面反应的光电子能谱研究

用光电子能谱研究了(Bi.Cd)Sr_2(Ln,Ce)_(?)Cu_2O_y的电子结构,以及其与铝之间的反应.芯能级结果表明:(Bi,Cd)Sr_2(Ln,Ce)_(?)Cu_2O_y系列中n=1,2和3三种材料的结果基本一致,并且类似其它超导材料中相同元素的芯能级结果.在(Bi,Cd)Sr_2(Ln,Ce)_(?)Cu_2O_y与铝的界面处,铝与(Bi,Cd)Sr_2(Ln,Ce)_(?)Cu_2O_y中的元素发生强烈反应,Bi—O,Sr—O和Cu—O键受到破坏,铜的价态从+2变为+1,并且同时伴随着超 关键词：     

用角分辨光电子能谱研究Co/Cu(111)外延超薄膜的电子结构

利用同步辐射角分辨光电子能谱研究了分子束外延生长的Co/Cu(111)超薄膜电子结构的变化.Cu(111)的位于表面布里渊区Γ点的表面态在覆盖度为两单层时仍然可以分辨,说明薄膜生长模式不是二维层状生长.在一单层和二单层时,动量沿Cu体布里渊区ΓΛL方向变化,Co的最明显的峰包有能量色散.在覆盖度从一单层到两单层的变化过程中,固定光子能量测谱发现Co的能带的能量调整.实验测得的Co膜的电子结构与已有理论计算的结果对比,初步确定Co原子在生长初期阶段为两层岛生长,而且在一单层时已经具有铁磁性.     

Mn overlayers on PbTe（111）： Substitutional adsorption and interface formation

The formation of the Mn/Pb Te（111） interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a（√3 ×√3）R30？-Pb0.67Mn0.33 Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/Pb Te（111） interface. The valence band maximum associated with the Pb0.67Mn0.33 Te layer is located at 1.27 e V below the Fermi level, and a schematic electronic structure of the Mn/Pb Te（111）interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 e V,in comparison with 4.35 e V for the Pb-covered substituted substrate and 3.95 e V for the pristine Pb Te（111） surface.     

Interface behavior of Mn/PbTe(111) studied by scanning tunneling microscopy and X-ray photoemission spectroscopy

Mn overlayers growth on PbTe(111) have been investigated by using scanning tunneling microscopy (STM) and X-ray photoemission spectroscopy (XPS). The strong chemical interactions were found during the formation of Mn/PbTe(111) interface. At the initial deposition of Mn, one part of Mn adatoms substitute Pb atoms on the PbTe(111) surface, forming a (√3 × √3)R30° MnTe phase, and the other part of Mn adatoms, together with the kicked-out Pb atoms, nucleate at the boundaries of the MnTe islands, forming loop islands around the MnTe islands as an intermediate state. Finally, they develop into regular 3D Pb capped Mn islands upon further Mn deposition. For Mn growth on the PbTe surface where Pb atoms are almost completely substituted by Mn, the deposited Mn atoms either cooperate into the 3D Pb capped Mn islands promoting the upright growth of the 3D Pb capped Mn islands, or nucleate and grow on the MnTe superstructure areas. Free Pb layer always floats on the top of surface, indicating that Pb layer has smaller surface energy, and Mn adatoms always exchange the positions with the underneath Pb atoms during the growth.     

Interdiffusion process in the InSe/Pt interface studied by angle-resolved photoemission

The electronic structure of the InSe/Pt interface has been studied by angle-resolved and X-ray photoemission measurements. From these results, it has been found that Pt incorporates into the InSe lattice at initial stages of Pt deposition, acting as a surface acceptor-like which tends to turn the interface into intrinsic. Beyond certain Pt submonolayer coverage, the band-bending process appears to be controlled by localized states appearing close to the Fermi level. The appearance of these states has been attributed to a reaction-like mechanism between diffused Pt and InSe atoms. For this interface, it has been found that a final electronic barrier of ∼1.2 eV is formed, close to that expected for an abrupt InSe/Pt Schottky barrier. Nevertheless, the atomic structure of the interface is far from that expected for an ideal Schottky interface.     

Structural and magnetic properties of the Ce/Fe(001) interface: a spin resolved inverse photoemission study

We report a spin-resolved inverse photoemission study on the early stages of the Ce/Fe(001) interface formation in the coverage range 0–10 Å. The interface has been grown in two different fashions (i.e., keeping the substrate temperature either at room temperature or at 600 °C), leading to quite different morphologic and magnetic properties. The room-temperature-grown interface shows the formation of a non-intermixed disordered Ce phase, giving rise to quite featureless spectra and to the absence of detectable spin-dependent effects. The hot-grown interface shows instead the formation of a stable and ordered Ce---Fe compound, with the clear appearance of new structures which show a sizeable spin-dependent behavior. A relevant Ce 4f contribution to them is ruled out on the basis of their angular dependence and of cross-section arguments, indicating their band-like character.     

苯并咪唑苝与金属Ag的界面电子结构研究

利用同步辐射光电子能谱实验技术考察了苯并咪唑苝(BZP)和Ag的界面形成过程与电子结构.单层覆盖度以下时，BZP分子与Ag有弱相互作用，在有机分子禁带中出现明显界面反应态，结合能位于0.9eV.单层铺满后，BZP分子呈现三维岛式生长，且与Ag的相互作用逐渐减弱，同时最高占据分子轨道由于终态效应逐渐向高结合能方向位移至体相结合能位置(2.3eV). Ag衬底上BZP分子的生长导致样品表面功函数减小，表明形成了表面偶极势(Δ=0.3eV)，且电子从有机分子向金属Ag偏移.最后，考察了BZP/Ag 关键词： 有机-金属界面 电子结构 光电子能谱 同步辐射     

酞菁铜与MoS_2(0001)范德瓦耳斯异质结研究

利用光电子能谱、原子力显微镜以及低能电子衍射等表面研究手段系统研究了真空沉积生长的酞菁铜薄膜与衬底MoS2(0001)之间的范德瓦耳斯异质结界面电子结构和几何结构.角分辨光电子能谱清楚地再现了MoS2(0001)衬底在Γ点附近的能带结构.低能电子衍射结果表明,CuPc薄膜在MoS2(0001)表面沿着衬底表面[11ˉ20],[1ˉ210]和[ˉ2110]三个晶向有序生长,反映了衬底对CuPc的影响.原子力显微镜结果表明,CuPc在MoS2衬底上遵循层状-岛状生长模式:在低生长厚度下(单层薄膜厚度约为0.3 nm),CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜;在较高的沉积厚度下,CuPc沿衬底晶向形成棒状晶粒,表现出明显的各向异性.光电子能谱显示界面偶极层为0.07 eV,而且能谱在膜厚1.2 nm饱和,揭示了酞菁铜与MoS2(0001)范德瓦耳斯异质结的能级结构.     

AlN-Si(111)异质结构界面陷阱态研究

利用Al_AlN_Si(111) MIS结构电容_频率谱研究了金属有机化学气相沉积法生长的 Si 基AlN的AlN_Si异质结构中的电荷陷阱态. 揭示了AlN_Si异质结构界面电荷陷阱态以及A lN层中的分立陷阱中心. 结果指出：AlN层中存在E_t-E_v=2.55eV的分立陷阱中心；AlN_Si界面陷阱态在Si能隙范围内呈连续分布，带中央态密度最低，N_ss为8×10^11eＶ^-1cm^-2，对应的时间常数τ为8×10^-4s ，俘获截面σn为1.58×10^-14cm^2；在AlN界面层存在三种陷阱 态，导致Al_AlN_Si异质结构积累区电容的频散. 关键词： 界面陷阱态 AlN-Si 电容-频率谱     

Buildup of the InSe/M interface (M Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy

The electronic properties of InSe/M (M  Pd, Au) interfaces have been studied by X-ray photoemission measurements. For the InSe/Pd interface, it has been found that Pd atoms diffuse into the InSe lattice at early stages of Pd coverage, acting as acceptor centers. As the Pd coverage increases, a Pd-InSe reaction determines the electronic behaviour of the interface. However, for Pd coverages higher than 1 ML, the barrier formation tends to be controlled by an emerging bulklike Pd overlayer. Despite the atomic structure of this system is far from that expected for an ideal Schottky one, the final electronic barrier value is close to that expected for an abrupt InSe/Pd Schottky interface. On the contrary, the InSe/Au system appeared to behave as a quasi-ideal abrupt Schottky interface. Annealing processes performed at temperatures higher than 600 K alter this scheme, as revealed by X-ray absorption spectroscopy measurements, enhancing diffusion of Au atoms into InSe. In any case, the electronic barrier results to be determined by the Au overlayer formed.     

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

The high-mobility conducting interface (CI) between LaAlO₃ (LAO) and SrTiO₃ (STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_bi) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V_bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O₂(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_bi-driven CI formation in as-grown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.