Optical properties of Tm-doped GaSe single crystals

Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ³F₄→³H₆ transition of Tm³⁺ ions with a low symmetry of D₃ in the host lattice.     

LiBX2 (B=Ga, In; X= S, Se, Te)光学性质与力学性质的第一性原理计算

采用基于第一性原理的赝势平面波方法系统地计算了LiBX₂ (B= Ga, In; X= S,Se,Te) 晶体的光学性质与力学性质. 由禁带宽度推断出晶体抗激光损伤阈值的大小顺序为LiGaS₂ > LiInS₂ > LiGaSe₂ > LiInSe₂ > LiGaTe₂ > LiInTe₂. 六种晶体在常压下均满足机械力学稳定性要求, 且铟化合物可塑性及延展性强于镓化合物. 这些晶体的静态电介电常数 ε₁(0)、静态折射率n(0)和双折射率Δn 理论计算值与实验值相符. LiGaS₂, LiInS₂, LiGaSe₂, LiInSe₂和LiGaTe₂五种化合物双折射率较高, 并且它们的吸收谱与反射谱在中远红外区是透过的, 因此可推断出这五种化合物可以成为优异的中远红外非线性光学材料.     

Optical and EPR study of BaY2F8 single crystals doped with Yb

Optical and electron paramagnetic resonance study have been carried out on BaY₂F₈ single crystals doped with Yb ions at 0.5 and 10 mol%. The crystals have been obtained using the Czochralski method modified for fluoride crystal growth. Optical transmission measurements in the range of 190-3200 nm and photoluminescence measurements were carried out at room temperature. Absorption spectra of BaY₂F₈ single crystals doped with Yb due to the ²F_7/2→²F_5/2 transitions have been observed in the 930-980 nm range. To analyze the possible presence of Yb²⁺ ions in the investigated crystals, irradiation with γ-quanta with a dose of 10⁵ Gy have been performed. The observed photoluminescence bands show usual emission in IR and other one in VIS, being an effect of cooperative emission of Yb³⁺ ions and energy up-conversion transitions of photons from IR to UV-vis(visible) due to hoping process between energy levels of paired Yb³⁺ and Er³⁺, where Er³⁺ ions are unintentional dopants. The EPR spectra of BaY₂F₈:Yb 10 mol% consist of many overlapping lines. They have been analyzed in terms of spin monomers, pairs, and clusters. The angular dependence of the resonance lines positions have been studied also to find the location of coupled ytterbium ions in the crystal structure.     

Influence of γ-radiation on photoluminescence properties of YPO4:Eu3+,Ce3+ and YPO4:Dy3+,Ce3+ phosphors

Hexagonal YPO₄ phosphors doped with Eu³⁺/Dy³⁺ and co-doped with Ce³⁺ were synthesized by a hydrothermal route assisted using lauric acid as a capping agent. The prepared phosphors were characterized by transmission electron microscopy, infrared spectroscopy, powder X-ray diffraction and photoluminescence spectra. YPO₄: Eu³⁺ gives two red emission peaks at 587 and 610?nm corresponding to ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transitions, respectively. YPO₄: Dy³⁺ exhibits two emission peaks at 485?nm (blue) and 575?nm (yellow) corresponding to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions, respectively. Ce³⁺ ions enhanced the emission intensity as a co-dopant in both phosphors. Moreover, the effect of γ-radiation in the dose range 5–300?kGy on the photoluminescence behaviour of YPO₄:Eu³⁺,Ce³⁺ and YPO₄:Dy³⁺,Ce³⁺ was also investigated. Quenching of emission intensity, after irradiation at 5 and 300?kGy, was observed in both the phosphors due to loss of excess energy through a non-radiative relaxation process.     

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

We have used the Bridgman method to grow CsBr:Eu²⁺ single crystals, adding an activator to the mix in the form of Eu₂O₃ in amounts of 0.0125, 0.0250, and 0.0500 mole %. At T = 300 K, we studied the absorption spectra, the photoluminescence (PL) spectra, and the photostimulated luminescence (PSL) spectra of the grown crystals. We have established that the structure of the photoluminescence and photostimulated luminescence centers in crystals grown from the CsBr:Eu₂O₃ mix includes isolated dipole centers Eu²⁺-V_Cs, emitting in bands with maxima at 432 nm and 455 nm respectively, and in crystals grown at activator concentrations of 0.025 and 0.050 mole % they also include aggregate centers (AC) based on CsEuBr₃ nanocrystals with emission bands at 515 m and 523 nm. We have shown that the maximum concentration of aggregate centers of the CsEuBr₃ nanocrystal type in CsBr:Eu²⁺ crystals is achieved for an activator content in the mix within the range 0.01–0.05 mole %. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 359–362, May–June, 2006.     

Eu red long afterglow in Y2O2S:Ti, Eu phosphor through afterglow energy transfer

Eu,Ti co-doped Y₂O₂S:0.03Ti,0.03Eu phosphors and single Eu or Ti doped Y₂O₂S phosphors were prepared and their luminescent properties were investigated in detail by photoluminescence (PL) spectra, long afterglow spectra and thermoluminescence spectra measurements. The results showed that Y₂O₂S:Ti,Eu phosphors possess orange-red afterglow color with afterglow time above 5 h. The reddish afterglow color, which corresponds to a set of linear Eu³⁺ emissions at low-energy range (540-630 nm), was demonstrated to come from the energy transfer process from yellow Ti afterglow emissions, the proposed energy transfer mechanism may well explain the Eu³⁺ afterglow emission.     

An optical spectroscopy study of defects in lithium tantalate single crystals

The congruent, stoichiometric, and Mg doped stoichiometric LiTaO₃ single crystals have been successfully grown by the Czochralski technique. The evolution of defect structures caused by varying composition and post-growth processing has been evaluated from the optical absorption and photoluminescence measurements. Optical absorption studies showed that the UV absorption edge is very sensitive to the composition of LiTaO₃ crystals. Photoluminescence of various LiTaO₃ single crystals at room temperature was observed. The emission bands centered at 360, 430, and 530 nm were assigned to different defects, which can well show the defect information in LiTaO₃ crystals.     

调谐激光晶体Cr3+:ZnWO4光致发光特性的研究

研究了调谐激光晶体Ｃｒ³⁺：ＺｎＷＯ₄的光致发光特性。报道了它的吸收光谱、激发光谱、发射光谱及其随温度的变化、零声子跃迁和发射寿命等实验结果，并讨论了激发特性、电子－声子耦合作用、ＺｎＷＯ₄中Ｃｒ³⁺的发射寿命曲线等相关问题。 关键词：     

Optical properties of Cu+ centers in NaCl

Different aggregation-precipitation states of Cu⁺ have been characterized by absorption bands peaked at 305, 350 and 372–383 nm.The absorption bands at 372–383 nm, observed exclusively in the most doped crystal, have been associated with the Z₁₂, Z₃ excitons of CuCl microcrystals incorporated into the NaCl matrix Their positions shift to low energies with increasing concentration, as expected for a decrease in the stress over the precipitate.The Z1₁₂, Z₃ exciton bands of CuCl microcrystals precipitated in NaCl can be observed by the optical absorption spectrum without reaching saturation Therefore, this technique could be an alternative method to studies of CuCl thin-film depositions or reflectivity of CuCl single crystals.The red emission band observed at 600 nm is a long-lived emission (τ? 29 ms) at variance with the behavior reported for the Cu⁺ emission It is related to energy transfer processes from Cu⁺ to Mn²⁺.     

Effect of γ-irradiation on structural,morphological and luminescence properties of cerium-doped Y3Al5O12 nano-material

ABSTRACT

Cerium-doped yttrium aluminum garnet (YAG: Ce³⁺) nanopowder phosphors have been elaborated by sol–gel process and annealed at 900°C for 2?h. The prepared phosphors were exposed to gamma radiation, using ⁶⁰Co source, at different doses ranging from 5 to 100?kGy. The influence of γ-irradiation on the structural, morphological and luminescence properties of YAG: Ce³⁺ phosphors were investigated in detail by X-ray diffraction, ?eld emission scanning electron microscopy (FESEM), Fourier transforms infrared spectroscopy (FTIR) and photoluminescence measurements. The XRD analysis confirmed the presence of single cubic phase for all samples of YAG: Ce³⁺ nanophosphors independent of γ-rays dose. FESEM micrograph results revealed that the particles present flate-like shapes and high density of dislocation for sample irradiated at 100?kGy of γ-ray. The YAG: Ce³⁺ nanophosphors showed broad green–yellow emission band in the range of 450–700?nm with maximum intensity at 538?nm assigned to the 5d → 4f transitions of Ce³⁺ ion. The emission intensity of YAG: Ce³⁺ phosphors vary with the γ-ray irradiation and reach the maximum for sample irradiated to a dose of 25?kGy. The variation of luminescence intensity is related to the crystallite size and Ce⁴⁺ ions content in YAG host nanomaterial.     

Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

Photostimulated luminescence in PbHPO4 near TC

Optical properties (absorption and photoluminescence) of PbHPO₄ single crystals have been performed in the range 100 – 350 K, spanning the transition temperature (T_C=310 K). An intrinsic luminescene band centered at 450 nm has been observed. The excitation spectrum for this emission shifts with temperature in the ferroelectric phase. The temperature dependence for this shift has been determined as E(T) T, for T<T_C. Similar behaviour had been observed in birrefringence measurements (performed by other authors), which yield n T P_S² (spontaneous polarization). The results show that the flourescence is very useful, as an alternative technique, to study the dynamics of the phase transitions.     

Cold white light generation through the simultaneous emission from Ce3+, Dy3+ and Mn2+ in 90Al2O3·2CeCl3·3DyCl3·5MnCl2 thin film

The photoluminescence of a CeCl₃, DyCl₃ and MnCl₂ doped aluminum oxide film deposited by ultrasonic spray pyrolysis was characterized by excitation, emission and decay time spectroscopy. A nonradiative energy transfer from Ce³⁺ to Dy³⁺ and Mn²⁺ is observed upon UV excitation at 278 nm (peak emission wavelength of AlGaN-based LEDs). Such energy transfer leads to a simultaneous emission of these ions in the blue, green, yellow and red regions, resulting in white light emission with CIE1931 chromaticity coordinates, x=0.34 and y=0.23, which correspond to cold white light with a color temperature of 4900 K.     

Photolumiscent Properties of Nanorods and Nanoplates Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript>

Nanorods and nanoplates of Y₂O₃:Eu³⁺ powders were synthesized through the thermal decomposition of the Y(OH)₃ precursors using a microwave-hydrothermal method in a very short reaction time. These powders were analyzed by X-ray diffraction, field emission scanning electron microscopy, Fourrier transform Raman, as well as photoluminescence measurements. Based on these results, these materials presented nanoplates and nanorods morphologies. The broad emission band between 300 and 440 nm ascribed to the photoluminescence of Y₂O₃ matrix shifts as the procedure used in the microwave-hydrothermal assisted method changes in the Y₂O₃:Eu³⁺ samples. The presence of Eu³⁺ and the hydrothermal treatment time are responsible for the band shifts in Y₂O₃:Eu³⁺ powders, since in the pure Y₂O₃ matrix this behavior was not observed. Y₂O₃:Eu³⁺ powders also show the characteristic Eu³⁺ emission lines at 580, 591, 610, 651 and 695 nm, when excited at 393 nm. The most intense band at 610 nm is responsible for the Eu³⁺ red emission in these materials, and the Eu³⁺ lifetime for this transition presented a slight increase as the time used in the microwave-hydrothermal assisted method increases.     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶     

Luminescence in x-irradiated CaF2:Co

Photoluminescence of X-irradiated CaF₂:Co single crystals is reported. The emission spectrum shows four peaks at 505, 550, 640 and 685 nm, all of them with an excitation band at 275 nm. The same emission spectrum, plus a band at 280 nm, is found in X-ray excited luminescence measurements. Thermoluminescence of 80 K X-irradiated crystals gives a glow curve with five peaks at 100, 125, 145, 190 and 225 K. The spectral distribution of these glow peaks is similar to that of the X-ray excited luminescence. The 280 nm band is associated with electron—hole recombination. The other four bands are associated with electron transitions among excited states of Co²⁺ produced by recombination of holes and Co⁺-ions created by X-irradiation.     

Photoluminescence in Gd2O3: Er3+, Yb3+ upconversion inverse opal

Photoluminescence properties of Gd₂O₃: Er³⁺, Yb³⁺ upconversion inverse opal photonic crystals were investigated. The photoluminescence spectra of the inverse opal show strong dependence on upconversion emission intensity and the corresponding photonic band-gaps of the inverse opal. Significant suppression of the green or red upconversion emission was observed if the photonic band-gap overlaps with the Er³⁺ ions emission band. The color purity of the red or green emission was improved in the inverse opal by the suppression of green or red UC emission. We believe that the present work will be valuable for not only the foundational study of upconversion emission modification but also new optical devices in upconversion lighting and display.     

Growth and spectral characterization of β-Ga2O3 single crystals

Beta gallium oxide (β-Ga₂O₃) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors.     

Defect evolution and photoluminescence in anion-defective alumina single crystals exposed to high doses of gamma-rays

A method of luminescent UV and VUV spectroscopy was used to study the evolution of color centers in anion-defective alumina single crystals exposed to high doses of gamma-radiation. A sharp drop in the intensity of the emission bands and, therefore, the concentration of F⁺ and F-centers associated with the formation of aggregate F₂-type centers was found. The aggregate centers create an additional emission band in the range of (1.8–2.8) eV. When the crystals are exposed to middle and high doses, the photoluminescence (PL) intensity is the highest in the emission band of F₂²⁺-centers, which indicates a high concentration of the aggregates from singly charged oxygen vacancies (of F⁺-centers). When PL of the crystals exposed to high doses is excited with synchrotron radiation of the VUV range, a wide emission band in the red and near infrared (NIR) regions is registered. The centers related presumably to impurity defects, their aggregates and clusters consisting of several oxygen vacancies are responsible for this emission band.     

Thermoluminescence and photoluminescence studies on gamma irradiated CsI: Pb2+ crystals

Pure and Pb²⁺-doped CsI crystals have been grown by the Bridgemann technique. Optical absorption, thermoluminescence (TL) and photoluminescence (PL) measurements have been performed. In undoped and Pb²⁺-doped cesium iodide crystals, F-centers and V-centers have been produced at 770 nm and 350 nm, respectively. In Pb²⁺-doped crystals, additional centers at 373 nm, 290 nm and 258 nm bands have been produced. In undoped samples, only two glow peaks at 343 K and 373 K have been produced, and in Pb²⁺-doped samples additional glow peaks at 383 K and 423 K have been produced. For all the samples, TL emission, PL and excitation measurements have been performed.