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We have investigated the physical properties,including the morphology,texture,adhesion and chemical quality,of high-frequency chemical vapour deposited diamond coatings on WC-6% Co substrates,which were pre-treated by a two-step etching method.The results indicate that the increasing Co content from 0.12 to 3.05% within the etching depth of 5μm caused a morphology transformation from prism diamond to spherulitic diamond,and a texture transformation from a {111} orientation to a {110} orientation.The Raman spectrum shows that the spherulitic diamond film contains more non-diamond phases (graphite,amorphous carbon and diamond-like carbon,etc) and has lower chemical quality than diamond films on a WC-6% Co substrate.The diamond coating grain sizes became about four times smaller when the deposition temperatures on the substrate surface were reduced from 1000 to 900℃.Compared with spherulitic diamond films,the prism diamond films exhibit better adhesion on the WC-6% Co substrate. 相似文献
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CHEN Jiming T. Muroga T. Nagasaka QIU Shaoyu ZHANG Fu LI Chong LIANG Bo XU Zengyu 《核工业西南物理研究院年报(英文版)》2004,(1):105-108
V-4Cr-4Ti is the leading candidate vanadium alloy for fusion applications as structural material of first wall and blanket. Due to the interaction between Ti and interstitial solutes of C, N, and O, precipitation occurs at elevated temperature. The behavior has been studied in the past few years by short time annealing and results showed that it may greatly affect its mechanical properties Ti-CON type precipitates, appearing at- 700℃ in the solid-solution annealed alloy in high number density and small size, strengthen the alloy significantly and reduce its ductility. As the ductility reduction is in an acceptable level, the strengthening might be utilized for a light and strong vanadium alloy structure. Before a conclusion, uncertainty of its thermal stability should be studied during the high temperature serves. Besides, seldom has been studied for the effect of long time aging on precipitation behavior and tensile properties of the alloy. 相似文献
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金刚石簿膜淀积过程中微波等离子体特性 总被引:1,自引:0,他引:1
高克林 《核聚变与等离子体物理》1992,12(2):124-128
一、引言 在金刚石薄膜的制备过程中,人们往往监测成膜过程中的宏观参量,使其工艺的重复性,优选性受到了很大限制。而随着对膜质量和结构的要求越来越高,人们开始开展对低压下合成金刚石机理的研究,但至今未见系统地研究宏观参量与等离子体参量方面的工作报道。 相似文献
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Interfacial Properties of AlN/Si(111) Grown by Metal—Organic Chemical Vapour Deposition 总被引:1,自引:0,他引:1 下载免费PDF全文
We have studied the interfacial structures of AlN/Si(111) grown by metal-organic chemical vapour deposition.X-ray photoelectron spectroscopy and Anger electron spectroscopy were used to analyse the components and chemical structures of AlN/Si(111).The results indicated that a mix-crystal transition region,approximately 12nm,was present between the AlN film and the Si substrate and it was composed of AlN and Si3N4.After analysis we found that the existence of Si3N4 could not be avoided in the AlN/Si(111) interface because of strong diffusion at 1070℃.Even in AlN layer Si-N bonds,Si-Si bonds can be found. 相似文献
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激光淀积YBa2Cu3O7外延超导薄膜 总被引:4,自引:2,他引:2
利用准分子脉冲激光成功地在(100)SrTiO_3与(100)Y-ZrO_2衬底上淀积了 YBa_2Cu_3O_7超导薄膜,T_c(R=0)>90K,J_c(T<82K)>1×10~6A/cm~2.研究了衬底温度对外延YBa_2Cu_3O_7薄膜超导性能及结构的影响. 相似文献
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众所周知,激光束能量密度高、光斑面积小、单色性好、方向性强和容易控制的特点导致它在材料加工(打孔与焊接)、生物、化学、医学和通信方面的广泛应用.最近发现采用脉冲激光淀积技术制备超导、介质和半导体薄膜时具有纯度高、成分准确、厚度均匀、重复性好和操作方便等许多优点,因而它已经成为最有发展前途的制膜新工艺.本文利用激光的线性吸收模型和溅射粒子角分布函数导出了固体靶刻蚀速率和薄膜淀积速率的解析计算公式.实验表明,计算值与实验值之间的相对误差都不超过10%. 相似文献
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Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition 下载免费PDF全文
Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit (〈0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures. 相似文献
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对最常用的TiO2和SiO2薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型,对TiO2和SiO2单层膜和多层膜进行了实验测试,得到了一些有价值的结果,特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素,低聚集密度产生张应力,而高聚集密度产生压应力.在多层膜中通过调节工艺参数,适当地控制张应力或压应力,可使累积应力趋向于零.
关键词:
薄膜应力
离子辅助淀积
聚集密度 相似文献
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报道了在蓝宝石(αAl2O3)衬底上采用atmosphericpressurechemicalvapor(APCVD)技术异质外延碳化硅薄膜材料的研究.通过引入ⅢⅤ族氮化物为中间的缓冲层,在C(0001)蓝宝石上成功地生长出SiC薄膜,经过四晶衍射分析,分别在3549°和7502°发现了6HSiC(0006)面和(00012)晶面族的对称衍射峰,显示SiC薄膜的晶体取向与(0001)面的衬底是相同的.扫描电子显微镜(SEM)的观察显示薄膜表面连续、光滑,不要利用二次离子质谱仪(SIMS)方法对生长膜层在纵
关键词:
碳化硅
外延生长
化学汽相淀积 相似文献
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An integrable Hamiltonian hierarchy, a high-dimensional loop algebra and associated integrable coupling system 下载免费PDF全文
A subalgebra of loop algebra ?_2 is established. Therefore, a new isospectral problem is designed. By making use of Tu's scheme, a new integrable system is obtained, which possesses bi-Hamiltonian structure. As its reductions, a formalism similar to the well-known Ablowitz-Kaup-Newell-Segur (AKNS) hierarchy and a generalized standard form of the Schr?dinger equation are presented. In addition, in order for a kind of expanding integrable system to be obtained, a proper algebraic transformation is supplied to change loop algebra ?_2 into loop algebra ?_1. Furthermore, a high-dimensional loop algebra is constructed, which is different from any previous one. An integrable coupling of the system obtained is given. Finally, the Hamiltonian form of a binary symmetric constrained flow of the system obtained is presented. 相似文献
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PECVDSiON薄膜的工艺控制,性质及其潜在应用 总被引:2,自引:1,他引:1
研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。 相似文献
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Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 总被引:1,自引:0,他引:1 下载免费PDF全文
We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency. 相似文献
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采用低压MOCVD系统,在生长过程中使用SiNx原位淀积的方法产生纳米掩模,并在纳米掩模上进行选区生长和侧向外延制备了GaN外延薄膜.使用拉曼光谱和光荧光的手段对GaN外延膜中的残余应力进行了研究.研究发现,用SiNx原位淀积出纳米掩模后,GaN生长将由二维向三维转变,直到完全合并为止.利用拉曼光谱和光荧光谱分别研究了薄膜中的残余应力,两者符合得很好;这种方法生长出的GaN薄膜的应力分布较传统的侧向外延更加均匀;并且从中发现随着生长过程中SiNx原位淀积时间的增加,生长在其上的GaN外延膜中的残余应力减小.这是因为,随着SiNx原位淀积时间的增加,SiNx纳米掩模的覆盖度也增大.因此侧向外延区的比例增大,残余应力随之减小. 相似文献
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Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition 下载免费PDF全文
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA. 相似文献