共查询到19条相似文献,搜索用时 656 毫秒
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结合自身实验条件采用电子束蒸发(EBE)、离子束溅射(IBS)和原子层沉积(ALD)三种工艺制备了HfO2薄膜,对其进行退火实验,采用1064 nm Nd:YAG激光测定了即时沉积和退火后各HfO2薄膜的抗激光损伤能力。研究发现,ALD HfO2薄膜的激光损伤阈值最高,EBE HfO2薄膜次之,IBS HfO2薄膜的损伤阈值最低;300℃退火对各工艺薄膜抗激光损伤能力的影响均为负面,500℃退火则会显著降低ALD HfO2薄膜的抗激光损伤能力。 相似文献
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本文采用MonteCarlo方法模拟低能Ar+离子注入ZrO2单晶所引起的原子级联碰撞过程.模拟结果表明,Ar+离子沿[111]轴沟道方向入射的溅射率低于沿[101]轴沟道方向入射的溅射率,更低于沿非沟道方向入射的溅射率.Ar+离子沿沟道方向入射的溅射率与非沟道方向入射的溅射率的差别随着Ar+离子入射能量的增大而迅速增大.因此在薄膜生长的过程中,若用一定能量的离子束以一定的入射角度进行轰击,薄膜中那些低指数晶向对准离子入射方向的晶粒,其溅射率和损伤程度较小.这些晶粒能保存下来并继续生长,而其它的晶粒由于其溅射率和损伤程度较大生长受到抑制.在薄膜生长的过程中,溅射率最少的晶粒由于生长速度较快,最终抑制了其它取向晶粒的生长.该模拟计算定性地说明了由于晶粒溅射产额的各向异性导致了Y稳定的ZrO2薄膜具有单一的取向和平面织构. 相似文献
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以1 030 nm高反,940,980 nm高透的波长分离膜作为实例,为提高该薄膜元件的波长分离效果,从膜系的优化方面做了一系列的研究,诸如采用带通滤光片的设计思想,在膜堆两侧加入了匹配层,调整膜堆的周期厚度,并用膜系设计软件对通带作进一步的优化.通过这一系列的优化设计后,利用RF双离子束溅射工艺在BK7玻璃基底上沉积样品薄膜,并在基底背面加镀通带增透膜.结果显示,透射带在940和980 nm处的透过率分别为97.73%和93.63%,反射带在1 030 nm的反射率为99.99%.对所制备的样品薄膜进行了激光损伤阈值测量,得到了35 J/cm2(1 064 nm,12 ns)的结果. 相似文献
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《光学学报》2017,(2)
氧化铪是高激光损伤阈值薄膜领域内一种重要的高折射率材料,其禁带宽度和Urbach带尾宽度直接影响到薄膜的吸收和激光损伤阈值。针对离子束溅射沉积法制备的氧化铪薄膜,以基板温度、离子束电压、离子束电流和氧气流量为主要制备参数,提出了基于正交实验的光学带隙调整方法,并采用Cody-Lorentz介电常数模型表征了薄膜的禁带宽度和带尾宽度。研究结果表明,当置信概率为90%时,在影响氧化铪薄膜禁带宽度的制备因素中,影响权重从大到小依次为基板温度、离子束电流和氧气流量,采用低基板温度、中等离子束电流和低氧气流量制备参数组合,可以获得高禁带宽度的氧化铪薄膜;对带尾宽度影响最大的制备参数是基板温度,其他参数影响不显著,在高基板温度下可以获得较低的带尾宽度,这表明氧化铪薄膜的无序度较低。 相似文献
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离子辅助沉积氧化物薄膜的光学特性 总被引:1,自引:1,他引:0
考察了不同离子、离子能量、离子束流密度等制备参数对离子辅助沉积的TiO_2、ZrO_2和SiO_2薄膜的折射率、吸收和激光损伤阈值等光学特性的影响。 相似文献
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用电子束蒸发的方法在BK7玻璃上制备了ZrO2单层膜和ZrO2/SiO2高反膜,利用掺Ti:sapphire飞秒激光系统输出的中心波长为800 nm,脉宽为50 fs的激光脉冲对这两种样品进行了激光损伤阈值测试.实验结果表明,ZrO2单层膜的阈值比ZrO2/SiO2高反膜的高;这与传统的纳秒脉冲激光的损伤情况相反.利用光离化和碰撞离化激发电子到导带,形成电子等离子体基本模型并对此现象进行了解释.同时,用显微镜对样品的损伤形貌进行了观测,对损伤的特点进行了表征. 相似文献
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利用电子束蒸发方法在Yb∶YAG晶体和熔融石英衬底上沉积单层ZrO2薄膜,分别在673 K和1 073 K的温度下经过12 h退火以后,通过X射线衍射(XRD)分析了薄膜晶相,计算了薄膜的晶粒尺寸;利用表面热透镜技术获得了薄膜的吸收;测量了退火后薄膜的激光损伤阈值。实验结果表明:两种衬底上的薄膜结构受到退火温度和衬底表面结构的影响,高温退火有利于单斜相的形成,含单斜相的ZrO2薄膜具有较高的激光损伤阈值,而由于衬底的吸收,Yb∶YAG晶体上薄膜的损伤阈值远小于石英衬底上薄膜的损伤阈值。 相似文献
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D C Weisser N R Lobanov P A Hausladen L K Fifield H J Wallace S G Tims E G Apushkinsky 《Pramana》2002,59(6):997-1006
The beam optics of a multi-sample sputter ion source, based on the NEC MCSNICS, has been modified to accommodate cathode voltages
higher than 5 kV and dispenses with the nominal extractor. The cathode voltage in Cs sputter sources plays the role of the
classical extractor accomplishing the acceleration of beam particles from eV to keV energy, minimizing space charge effects
and interactions between the beam and residual gas. The higher the cathode voltage, the smaller are these contributions to
the emittance growth. The higher cathode voltage also raises the Child’s law limit on the Cs current resulting in substantially
increased output. The incidental focusing role of the extractor is reallocated to a deceleration Einzel lens and the velocity
change needed to match to the pre-acceleration tube goes to a new electrode at the tube entrance. All electrodes are large
enough to ensure that the beam fills less than 30% of the aperture to minimize aberrations. The improvements are applicable
to sputter sources generally. 相似文献
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Cluster ions have been recognized as a superb primary species in time of flight secondary ion mass spectroscopy (ToF-SIMS) compared with monatomic primary ions, as they significantly enhance the secondary ion yields from bulk samples. Self-assembled monolayers provide an important system for studying the fundamental mechanism involved in the yield enhancement.We used a gold cluster ion source to analyze a new type of self-assembled monolayer: a fluorocarbon-grafted polyethylene terephthalate. In addition to the structure details, which helped to understand the grafting mechanism, ToF-SIMS analysis revealed that fluorocarbon secondary ion yield enhancements by cluster ions were due to the enhanced sputter efficiency. A larger information depth may also be expected from the enhancement. Both mathematical definitions of damage cross-section and disappearance cross-section were revisited under a new context. Another cross-section parameter, sputter cross-section, was introduced to differentiate the beam induced sputter process from damage process. 相似文献
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Hyun Kyong Shon Dahl Hyun Kim Byoung Hoon Lee Dae Won Moon 《Applied Surface Science》2008,255(4):1055-1057
The effects of C60 cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs+, 10 keV C60+, 20 keV C602+ and 30 keV C603+ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth. 相似文献