共查询到18条相似文献,搜索用时 93 毫秒
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利用红外光源浮区法生长出大尺寸、高质量的磁失措自旋冰化合物Dy2Ti2O7单晶体.X射线衍射实验证实晶体具有面心立方结构,空间群为 Fd3m,晶胞参数a=1.0112(2) nm,[111]和[400]方向X射线衍射摇摆曲线半高宽分别仅为0.07°和0.05°.直流磁化率与温度关系测量给出晶体的Van Vleck顺磁因子为2.46×10-5 m3/mol,有效磁矩μeff=10.24(4)μB,Cure-Weiss温度ΘCW=1.1 K,揭示Dy2Ti2O7具有弱的铁磁性.对磁性起源的综合分析表明,该自旋冰晶体磁性质主要来源于磁偶极相互作用,且相关最近邻长程偶极相互作用能量标度Dnn=3.00 K. 相似文献
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采用溶胶-凝胶法(Sol-gel)制备了不同烧结温度和Tm3+掺杂浓度的Y2Ti2O7:xTm (x=0.005,0.01,0.03,0.05)荧光粉,分别采用X射线衍射分析仪(XRD)、透射电子显微镜(TEM)和荧光光谱仪对样品的晶型结构、形貌以及发光性能进行了表征。XRD结果表明,所得到的样品为单一立方相烧绿石结构。样品在361 nm紫外光激发下发射出 蓝光,其峰值波长为456 nm,对应于Tm3+的1D2→3F4跃迁。1 000 ℃烧结的Y2Ti2O7: 0.01Tm3+样品具有较好的发光性能。样品在456 nm处的相对发光强度随Tm3+掺杂浓度的增大先升高后降低,在Tm3+摩尔分数为1%时达到最大,即出现了浓度猝灭现象。 相似文献
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通过对Eu2-xPbxRu2O7(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测,结果发现,随着Pb替代浓度x值的增加,样品的电阻率逐渐减小,系统在x=0.8附近发生了金属-绝缘体(M-I)相变;Ru4+的局域磁矩及其自旋玻璃冻结温度TG也随之降低. 在该体系中,Pb2+对Eu3+的部分替代使样品中载流子浓度增加,Pb的6p能带与Ru 4d电子的T2g能带混合,能带得以拓宽,Ru 4d电子的巡游性增强,导致该体系物性的系列变化.
关键词:
自旋几何受挫
2-xPbxRu2O7体系')" href="#">Eu2-xPbxRu2O7体系
金属-绝缘体相变
自旋玻璃态 相似文献
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用传统固相烧结法制备了Sr2Bi4-xDyxTi5 O18(SBDT-x, x=0—0.20)陶瓷样品. x射线衍射分析表明, 微量的Dy掺杂没有影 响Sr2Bi4Ti5O18(SBTi) 原有的层状钙钛 矿结构. 通过研究样品的介电特性, 发现Dy掺杂减小了材料的损耗因子, 降低了样品铁电- 顺电相转变的居里温度. 铁电性能测量结果表明, 随Dy含量的增加, SBDT-x系列样品的剩余 极化先增大, 后减小. 当Dy掺杂量为0.01时, 剩余极化达到最大值, 约为20.1 μC·cm-2. 掺杂引起剩余极化的变化, 与材料中缺陷浓度、内应力以及晶格畸变程度等因 素有关, 是多种作用机理相互竞争的结果. (Bi2O2)2+ 层通常被看作是绝缘层和空间电荷库, 对材料的铁电性能起关键作用. 掺杂离子进入(Bi2O2)2+层会导致铁电性能变差.
关键词:
2Bi4Ti5O18陶瓷')" href="#">Sr2Bi4Ti5O18陶瓷
Dy掺 杂
铁电性能
居里温度 相似文献
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通过助溶剂熔融法并在氩气气氛炉中成功生长出高质量大尺寸的CaTi2O4的单晶.X射线衍射实验及能量损失谱EDS证实,制备的CaTi2O4单晶晶胞参数a=9.781?,b=9.966?,c=3.148?,所有样品均为单相,且符合化学计量比,样品高纯.通过直流磁化率的测量,首次给出了晶体的Van-Vleck顺磁因子为6.85×10-5cm3/mol,Cure-Weiss温度为-0.44 K,呈弱反铁磁性.同时,通过单晶各向磁化率的测量,进一步确认了CaTi2O4晶体中一维有序Ti-Ti反铁磁dimer链的形成,并明确了其方向.
关键词:
2O4')" href="#">CaTi2O4
磁化率
各向异性
反铁磁二聚化 相似文献
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利用同步辐射光源(德国HASYLAB实验室的SUPERLUMI实验站)和真空紫外激光(157.6nm)对新型蓝光发射长余辉材料Sr2MgSi2O7:Eu2+(0.2%),Dy3+(8%)进行了光谱研究。在170nm同步辐射光源激发下,观察到对应Eu2+:5d-4f跃迁的477nm发射带和对应Dy3+:4f-4f跃迁的两组线谱发射,其中只有来自Eu2+的5d-4f发射对长余辉光谱有贡献。在157.6nm激光激发下,除了上述发射外,还明显观察到对应Eu3+的红色线谱(590,614,626nm)。结合这些光谱特性,对Sr2MgSi2O7:Eu2+,Dy3+中稀土离子的发光特性以及长余辉发光机理进行了讨论,并提出了Eu2+充当空穴陷阱的可能性。 相似文献
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In this article, the structural and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm2Ti2O7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm2Ti2O7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress. 相似文献
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We describe the structural properties and electrical characteristics of thin thulium oxide (Tm2O3) and thulium titanium oxide (Tm2Ti2O7) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm2Ti2O7 film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 1011 eV−1 cm−2, and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm2O3 film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress. 相似文献
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In this work, the complete matrix of optical spectral levels in trigonal symmetry of 3d2 (3d8) ions are established on basis of strong field coupling mechanism by using two spin–orbit coupling parameters model. The contribution of the spin–orbit coupling of ligand to the optical spectra has been included in these formulas. As an application, the optical spectra of Cr4+ in Y2Ti2O7 and Y2Sn2O7 have been studied by the complete diagonalization (energy matrix) method. The covalent effect has been studied and the difficulty about Dq parameter in explanation of optical spectra of Cr-doped Y2Ti2O7 and Y2Sn2O7 is removed. The theoretical results are in good agreement with observed data. 相似文献
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利用传统的固相反应工艺,在不同的烧结温度下制备了一系列的CaCu3Ti4O12陶瓷样品,考察了其微观结构以及介电和复阻抗方面的电学性质.研究发现这些样品在微观结构方面可分为三种类型,高介电性与微观结构有着密切的关联性.室温下,样品的低频介电常数随陶瓷晶粒尺寸的增大而提高.随着测试温度的升高,不同微观结构类型的样品呈现出不同的电学性质的变化,但其中也存在着一些相同的特征.高温下,介电频谱呈现出一个低频介电响应和两个类Debye型弛豫色散,复阻抗谱呈现出三个Cole-Cole半圆弧.将实验上观测到的电学性质的起因归于陶瓷多晶微结构中的晶畴、晶界和晶粒内的缺陷.
关键词:
3Ti4O12')" href="#">CaCu3Ti4O12
微观结构
电学性质 相似文献
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This paper describes the structural properties and electrical characteristics of thin Dy2O3 dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy2O3 dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance-voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700 °C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy2O3 structure and the reduction of the interfacial SiO2 layer. 相似文献
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A red-emitting phosphor material, Gd2Ti2O7:Eu3+, V4+, by added vanadium ions is synthesized using the sol-gel method. Phosphor characterization by high-resolution transmission electron microscopy shows that the phosphor possesses a good crystalline structure, while scanning electron microscopy reveals a uniform phosphor particle size in the range of 230-270 nm. X-ray photon electron spectrum analysis demonstrates that the V4+ ion promotes an electron dipole transition of Gd2Ti2O7:Eu3+ phosphors, causing a new red-emitting phenomenon, and CIE value shifts to x=0.63, y=0.34 (a purer red region) from x=0.57, y=0.33 (CIE of Gd2Ti2O7:Eu3+). The optimal composition of the novel red-emitting phosphor is about 26% of V4+ ions while the material is calcinated at 800 °C. The results of electroluminescent property of the material by field emission experiment by CNT-contained cathode agreed well with that of photoluminescent analysis. 相似文献
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The optical band positions and spin-Hamiltonian parameters (g factors gg? and zero-field splitting D) for the trigonal Cr3+ centers in Y2Ti2O7 crystal are calculated from the complete diagonalization (of energy matrix) method based on the two-spin-orbit-parameter model. In the calculations, the contributions to spectral data from both the spin-orbit parameter of central dn ion and that of ligand ion are considered and the crystal field parameters used are estimated from the superposition model. The calculated results are in reasonable agreement with the experimental values. The defect structures of Cr3+ center is suggested. 相似文献
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用传统的固相烧结工艺,制备了钼掺杂铁电陶瓷样品SrBi4Ti4O15(SBTi)铁电陶瓷SrBi4-2x/3Ti4-xMoxO15(x=0.00,0.003,0.012,0.03,0.06,0.09).X射线衍射的结果表明,样品均为单一的层状钙钛矿结构相,Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现,样品晶粒为片状,随掺杂量的增加,晶粒逐
关键词:
4Ti4O15')" href="#">SrBi4Ti4O15
Mo掺杂
剩余极化
居里温度 相似文献