Electronic states and spin-filter effect in three-dimensional topological insulator Bi_2Se_3 nanoribbons

We study the electronic band structure, density distribution, and transport of a Bi_2Se_3 nanoribbon. We find that the density distribution of the surface states is dependent on not only the shape and size of the transverse cross section of the nanoribbon, but also the energy of the electron. We demonstrate that a transverse electric field can eliminate the coupling between surface states on the walls of the nanoribbon, remove the gap of the surface states, and restore the quantum spin Hall effects. In addition, we study the spin-dependent transport property of the surface states transmitting from top and bottom surfaces(x-y plane) to the side surfaces(z-x plane) of a Bi_2Se_3 nanoribbon. We find that transverse electric fields can open two surface channels for spin-up and-down Dirac electrons, and then switch off one channel for the spin-up Dirac electron. Our results may provide a simple way for the design of a spin filter based on topological insulator nanostructures.     

Topological phases and phase transitions on the honeycomb lattice

We investigate possible phase transitions among the different topological insulators in a honeycomb lattice under the combined influence of spin-orbit couplings and staggered magnetic flux. We observe a series of topological phase transitions when tuning the flux amplitude, and find topologically nontrivial phases with high Chern number or spin-Chern number. Through tuning the exchange field, we also find a new quantum state which exhibits the electronic properties of both the quantum spin Hall state and quantum anomalous Hall state. The topological characterization based on the Chern number and the spin-Chern number are in good agreement with the edge-state picture of various topological phases.     

Quantum spin Hall effect in inverted InAs/GaSb quantum wells

We review the recent experimental progress towards observing quantum spin Hall effect in inverted InAs/GaSb quantum wells (QWs). Low temperature transport measurements in the hybridization gap show bulk conductivity of a non-trivial origin, while the length and width dependence of conductance in this regime show strong evidence for the existence of helical edge modes proposed by Liu et al. [Phys. Rev. Lett., 2008, 100: 236601]. Surprisingly, edge modes persist in spite of comparable bulk conduction and show only weak dependence on magnetic field. We elucidate that seeming independence of edge on bulk transport comes due to the disparity in Fermi-wave vectors between the bulk and the edge, leading to a total internal reflection of the edge modes.     

Magnetic switching and spin filtering in an edge-state device based on HgTe waveguides

We investigate theoretically the edge channel transport in a HgTe waveguide modulated bytwo magnetic barriers. For an electron incident from a quantum-spin-Hall state in leads,the transmission can depend strongly on the relative orientation (parallel orantiparallel) of the two magnetic barriers as its energy is near the bulk conduction bandof leads. For the antiparallel configuration, the transmission is spin-independent and canbe suppressed drastically. For the parallel configuration, the electron can transmitnearly perfectly for a proper spin orientation. This contrast in transmission indicatesthat the proposed edge-state device may serve as a magnetic switch and a spin filter.     

Transverse electric field-induced quantum valley Hall effects in zigzag-edge graphene nanoribbons

We have investigated gapless edge states in zigzag-edge graphene nanoribbons under a transverse electric field across the opposite edges by using a tight-binding model and the density functional theory calculations. The tight-binding model predicted that a quantum valley Hall effect occurs at the vacuum-nanoribbon interface under a transverse electric field and, in the presence of edge potentials with opposite signs on opposite edges, an additional quantum valley Hall effect occurs under a much lower field. Dangling bonds inevitable at the edges of real nanoribbons, functional groups terminating the edge dangling bonds, and spin polarizations at the edges result in the edge potentials. The density functional theory calculations confirmed that asymmetric edge terminations, such as one having hydrogen at an edge and fluorine at the other edge, lead to the quantum valley Hall effect even in the absence of a transverse electric field. The electric field-induced half-metallicity in the antiferromagnetic phase, which has been intensively investigated in the last decade, was revealed to originate from a half-metallic quantum valley Hall effect.     

Topological phases of silicene and germanene in an external magnetic field: Quantitative results

We investigate the topological phases of silicene and germanene that arise due to the strong spin–orbit interaction in an external perpendicular magnetic field. Below and above a critical field of 10 T, respectively, we demonstrate for silicene under 3% tensile strain quantum spin Hall and quantum anomalous Hall phases. Not far above the critical field, and therefore in the experimentally accessible regime, we obtain an energy gap in the meV range, which shows that the quantum anomalous Hall phase can be realized experimentally in silicene, in contrast to graphene (tiny energy gap) and germanene (enormous field required). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Rashba自旋轨道耦合下square-octagon晶格的拓扑相变

本文研究了各向同性square-octagon晶格在内禀自旋轨道耦合、Rashba自旋轨道耦合和交换场作用下的拓扑相变,同时引入陈数和自旋陈数对系统进行拓扑分类.系统在自旋轨道耦合和交换场的影响下会出现许多拓扑非平庸态,包括时间反演对称破缺的量子自旋霍尔态和量子反常霍尔态.特别的是,在时间反演对称破缺的量子自旋霍尔效应中,无能隙螺旋边缘态依然能够完好存在.调节交换场或者填充因子的大小会导致系统发生从时间反演对称破缺的量子自旋霍尔态到自旋过滤的量子反常霍尔态的拓扑相变.边缘态能谱和自旋谱的性质与陈数和自旋陈数的拓扑刻画完全一致.这些研究成果为自旋量子操控提供了一个有趣的途径.     

Persistent currents in a graphene ring with armchair edges

A graphene nanoribbon with armchair edges is known to have no edge state. However, if the nanoribbon is in the quantum spin Hall state, then there must be helical edge states. By folding a graphene ribbon into a ring and threading it by a magnetic flux, we study the persistent charge and spin currents in the tight-binding limit. It is found that, for a broad ribbon, the edge spin current approaches a finite value independent of the radius of the ring. For a narrow ribbon, inter-edge coupling between the edge states could open the Dirac gap and reduce the overall persistent currents. Furthermore, by enhancing the Rashba coupling, we find that the persistent spin current gradually reduces to zero at a critical value beyond which the graphene is no longer a quantum spin Hall insulator.     

锯齿型石墨烯纳米窄带中量子霍尔体系的电场调控

应用含自洽格点在位库仑作用的Kane-Mele模型,研究锯齿型石墨烯纳米窄带平面内横向电场对边界带能带结构和量子自旋霍尔(QSH)体系的影响.研究结果显示,当电场强度较弱时,外加电场的方向可以调控自旋向下的两个边界带一起朝不同方向移动,导致波矢q=0.5处自旋向下的两个纯边界态的能量简并劈裂方向可由电场调控;当电场强度进一步增强到超过0.69 V/nm,自旋向下的两个边界带出现较大带隙,能带反转,而自旋向上的电子结构无能隙,系统呈现半金属性,同时QSH体系不再是B类.特别当电场强度为1.17 V/nm时,在自旋向下能带的能隙中,q=0.5处存在自旋向上的纯边界态,意味着在8格点边界处可以产生自旋向上的纯边界电流.当电场强度持续增加时,QSH系统从B类到C类经历3个阶段的变化.当电场强度超过1.42 V/nm后,自旋向上的两个边界带也出现能带反转,分别成为导带和价带,系统成为C类的普通量子霍尔体系.     

Current distribution in the integer quantum Hall effect: The role of bulk states

The role of bulk and edge currents in a two-dimensional electron gas under the conditions of the integer quantum Hall effect (IQHE) was studied by means of an inductive coupling to Hall bar geometry. From this study we conclude that the extended states at the bulk of the sample below the Fermi energy are capable of carrying a substantial amount of Hall current. For Hall bar geometry sample with a back gate we demonstrated that injected current can be pushed from one edge to another by reversing the direction of the external magnetic field.     

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.     

Local investigation of the energy gap within the incompressible strip in the quantum Hall regime

We experimentally study the energy gap within the incompressible strip at local filling factor ν _c = 1 at the quantum Hall edge for samples of very different mobilities. The obtained results indicate strong enhancement of the energy gap in comparison to the single-particle Zeeman splitting. We identify the measured gap as a mobility gap, so a pronounced experimental in-plane magnetic field dependence can both be attributed to the spin effects as well as to the change in the energy levels broadening.     

Generating spin currents in semiconductors with the spin Hall effect

We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.     

Spin-Filter Effect Induced by Magnetic Edge States of Zigzag Carbon Nanotube

Spin-filter effect is predicted in a weak coupled junction composed of a nonmagnetic metal electrode and a zigzag carbon nanotube. This effect is induced by the magnetic edge states of the nanotube, and can produce spin- polarized current in the absence of an external magnetic field. We find that the spin polarization of the current changes its sign at the half-filling point of the nanotube, thus electric field control of spin transport can be realized. Furthermore, we find the coupling strength of the junction may cause a magnetic transition on the edge of the nanotube.     

Electrical manipulation and measurement of spin properties of quantum spin Hall edge states

We study the effects of a gate-controlled Rashba spin-orbit coupling to quantum spin Hall edge states in HgTe quantum wells. A uniform Rashba coupling can be employed in tuning the spin orientation of the edge states while preserving the time-reversal symmetry. We introduce a sample geometry where the Rashba coupling can be used in probing helicity by purely electrical means without requiring spin detection, application of magnetic materials or magnetic fields. In the considered setup a tilt of the spin orientation with respect to the normal of the sample leads to a reduction in the two-terminal conductance with current-voltage characteristics and temperature dependence typical of Luttinger liquid constrictions.     

Photoexcitation in two-dimensional topological insulators

One of the most fascinating challenges in Physics is the realization of an electron-based counterpart of quantum optics, which requires the capability to generate and control single electron wave packets. The edge states of quantum spin Hall (QSH) systems, i.e., two-dimensional (2D) topological insulators realized in HgTe/CdTe and InAs/GaSb quantum wells, may turn the tide in the field, as they do not require the magnetic field that limits the implementations based on quantum Hall effect. However, the band structure of these topological states, described by a massless Dirac fermion Hamiltonian, prevents electron photoexcitation via the customary vertical electric dipole transitions of conventional optoelectronics. So far, proposals to overcome this problem are based on magnetic dipole transitions induced via Zeeman coupling by circularly polarised radiation, and are limited by the g-factor. Alternatively, optical transitions can be induced from the edge states to the bulk states, which are not topologically protected though.Here we show that an electric pulse, localized in space and/or time and applied at a QSH edge, can photoexcite electron wavepackets by intra-branch electrical transitions, without invoking the bulk states or the Zeeman coupling. Such wavepackets are spin-polarised and propagate in opposite directions, with a density profile that is independent of the initial equilibrium temperature and that does not exhibit dispersion, as a result of the linearity of the spectrum and of the chiral anomaly characterising massless Dirac electrons. We also investigate the photoexcited energy distribution and show how, under appropriate circumstances, minimal excitations (Levitons) are generated. Furthermore, we show that the presence of a Rashba spin–orbit coupling can be exploited to tailor the shape of photoexcited wavepackets. Possible experimental realizations are also discussed.     

Topological phase transition in anisotropic square-octagon lattice with spin–orbit coupling and exchange field

We investigate the topological phase transitions in an anisotropic square-octagon lattice in the presence of spin–orbit coupling and exchange field. On the basis of the Chern number and spin Chern number, we find a number of topologically distinct phases with tuning the exchange field, including time-reversal-symmetry-broken quantum spin Hall phases, quantum anomalous Hall phases and a topologically trivial phase. Particularly, we observe a coexistent state of both the quantum spin Hall effect and quantum anomalous Hall effect. Besides, by adjusting the exchange filed, we find the phase transition from time-reversal-symmetry-broken quantum spin Hall phase to spin-imbalanced and spin-polarized quantum anomalous Hall phases, providing an opportunity for quantum spin manipulation. The bulk band gap closes when topological phase transitions occur between different topological phases. Furthermore, the energy and spin spectra of the edge states corresponding to different topological phases are consistent with the topological characterization based on the Chern and spin Chern numbers.     

The topological quantum phase transitions in Lieb lattice driven by the Rashba SOC and exchange field

The quantum spin Hall (QSH) effect and the quantum anomalous Hall (QAH) effect in Lieblattice are investigated in the presence of both Rashba spin-orbit coupling (SOC) anduniform exchange field. The Lieb lattice has a simple cubic symmetry, which ischaracterized by the single Dirac-cone per Brillouin zone and the middle flat band in theband structure. The intrinsic SOC is essentially needed to open the full energy gap in thebulk. The QSH effect could survive even in the presence of the exchange field. In terms ofthe first Chern number and the spin Chern number, we study the topological nature and thetopological phase transition from the time-reversal symmetry broken QSH effect to the QAHeffect. For Lieb lattice ribbons, the energy spectrum and the wave-function distributionsare obtained numerically, where the helical edge states and the chiral edge states revealthe non-trivial topological QSH and QAH properties, respectively.