二维MoS2/MoSe2异质材料的电子结构和热电性质研究

利用密度泛函理论结合玻尔兹曼输运理论计算体相和双层二维MoS₂/MoSe₂异质材料的热电性质. 计算表明,体相MoS₂/MoSe₂异质材料的热电性质比之于MoSe₂会有较大程度的提高. 该异质材料热电性质的提高主要源于异质材料本身带隙的减小以及层间的范德瓦尔斯相互作用. 二维MoS₂/MoSe₂异质材料存在热电应用的可能性.     

Hole doped α-MgAgSb as potential low temperature thermoelectric materials

The electronic structures and thermoelectric transport properties of α-MgAgSb were systematically investigated by using the first principles calculations combined with the Boltzmann transport equations. It is found that the thermoelectric properties of p-type α-MgAgSb are much better than those of n-type one, which originates from the steeper slope of the density of states at the edge of the valence band. By analyzing the density of states and partial charge density, we conclude that p-doping at the Mg-site does not modify the electronic states, but can optimize the carrier concentration. The effects of the carrier concentration and temperature on the thermoelectric transport properties of p-type α-MgAgSb are discussed in detail and the calculated results show good agreement with the experimental values. The p-type α-MgAgSb exhibit high thermoelectric performance and is a promising candidate for the low-temperature thermoelectric applications     

Thermoelectric transport coefficients of n-doped CaTiO3, SrTiO3 and BaTiO3: A theoretical study

Boltzmann transport equations and density functional theory calculations were employed to calculate the thermoelectric transport coefficients of CaTiO₃, SrTiO₃ and BaTiO₃. It was found that BaTiO₃ has the largest Seebeck coefficient and power factor. Then the transport coefficients were analyzed using the ‘Tight Binding Model’. The band narrowing, caused by the increasing lattice constants from CaTiO₃ to BaTiO₃, was the main reason for the increasing Seebeck coefficients and the decreasing electrical conductivity. The calculated electrical conductivity and electronic thermal conductivity were in line with the Wiedemann-Franz law and the Lorenz factor was determined to be 2.45 for these oxides as degenerate semiconductors. Our theoretical results are helpful for seeking high performance thermoelectric oxides.     

γ-石墨炔及其衍生物的热电性质：第一性原理计算

本文基于第一性原理计算研究了两种半导体性的碳同素异形体-γ-石墨炔及其衍生物的电子结构和热电性质. 两种材料具有较小的带隙和较长的载流子弛豫时间,有利于热传导. 结果表明两种材料中的热电转换效率都相对大,且当载流子浓度为10²¹ cm^-3时,在900 K附近达到最大值. 研究预示着两种材料有潜力作为热电材料得到应用.     

Band gap opening in zigzag graphene nanoribbon modulated with magnetic atoms

The effects of magnetic atom on the band structure of zigzag-edged graphene nanoribbons are investigated by the density functional theory. The results show that for narrow zigzag-edged graphene nanoribbons, the band gap can be opened duo to the spin-up/spin-down charges being re-enriched on the edge sites. However, for the wide zigzag-edged graphene nanoribbons, a spin-up/spin-down half-metallic property can be observed. Moreover, it is found that the Seebeck coefficients in the narrow zigzag-edged graphene nanoribbons are reversed and enlarged, which provides a way to design novel thermoelectric device.     

Theoretical investigation of electronic structure and optical response in relation to the transport properties of Ga1−xInxN (x = 0, 0.25, 0.50, 0.75)

The state-of-the-art all-electron FLPAW method and the BoltzTrap software package based on semi-classical theory were adopted to explore the electronic structure and the optical and thermoelectric properties of Ga_1−xIn_xN. Ga_1−xIn_xN is predicted to be a direct band gap material for all values of x. Moreover, the band gap varies between 2.99 eV and 1.95 eV as x changes. Optical parameters such as the dielectric constant, absorption coefficient, reflectivity and refractive index are calculated and discussed in detail. The doping of In plays an important role in the modulation of the optical constants. The static dielectric constant ɛ(0) of Ga_1−xIn_xN was calculated as 3.95, 3.99, 3.99 and 4.03 at x = 0.00, 0.25, 0.50 and 0.75, respectively. The static refractive index is 2.0 for pure Ga_1−xIn_xN at x = 0.00. The thermal properties varied greatly as x fluctuated. The ternary alloy has large values for the Seebeck coefficient and figure of merit at high temperatures and is thus suitable for thermoelectric applications. Pure Ga_1−xIn_xN at x = 0 exhibited ZT = 0.80 at room temperature, and at higher temperatures, the thermal conductivity decreased with increased In doping.     

First-principle study on the electronic structure and the anti-ferromagnetic properties of the organic-inorganic hybrid compound [Co(μ1,3-SCN)2(μ1,6-dmpzdo)]n

The electronic and the magnetic properties of the molecule-based magnet [Co(μ_1,3-SCN)₂(μ_1,6-dmpzdo)]n (where dmpzdo=2,5-dimethylpyrazine-1,4-dioxide) have been investigated using first-principles, namely density-functional theory (DFT) with the generalized gradient approximation (GGA) method and the full-potential linearized augmented plane-wave method (FP_LAPW). The total energy, the spin magnetic moments and the density of states (DOSs) were all calculated and spin distributions in ferromagnetic and anti-ferromagnetic (AFM) states of it have been obtained by the calculation. The electronic structure and magnetic coupling between cobalt ions along chain are discussed, and the calculations reveal that the compound [Co(μ_1,3-SCN)₂(μ_1,6-dmpzdo)]n has a stable anti-ferromagnetic ground state, which is in good agreement with the experimental results.     

First principles study of electronic structure and carrier mobility in β-armchair antimony nanotubes

In recent work, we have investigated the structure and stability of β-armchair antimony nanotubes (SbNT) using density functional theory (DFT). We studied electronic properties like electronic band structure, density of states (DOS) and mechanical properties such as stiffness constant, Poisson's ratio, and mechanical strength for these nanotubes. We found that these nanotubes are energetically stable and semiconducting in nature with band-gap varying between 1.32 eV to 1.47 eV. We have also calculated effective mass and carrier mobility for these nanotubes. Furthermore, stiffness constant and mechanical strength of these nanotubes increases with increase in diameter. While, $(4,4)$ nanotube shows anomalously higher strength than other nanotubes. The results of effective mass and carrier mobility for these nanotubes shows that electrons have higher effective mass and therefore lesser mobility than holes for most of the nanotubes. Our calculations show that β-armchair antimony nanotubes (SbNT) could be use in nano-electronics.     

二维InSe/SnSe2范德华异质结的电子结构和光学特性研究

本文构建了三种不同堆叠形式下的二维InSe/SnSe₂范德华异质结模型,利用基于密度泛函理论的第一性原理方法综合考察了二维InSe/SnSe₂三种不同堆叠情况下的几何构型及稳定性,在此基础上选取具有最稳定性能的构型.该异质结呈现出Ⅱ型能带对齐特征,带隙值为1.118 eV,可以实现电子-空穴的有效分离.另外,相比与单层二维InSe/SnSe₂范德华异质结的光吸收能力达到明显提升,在紫外光范围内吸收系数达到10~6 cm^-1.研究结果将为相关物理实验及机理研究提供理论基础,对二维InSe/SnSe₂范德华异质结在光电器件中的应用具有重要的物理意义.     

Enhanced Seebeck effect in graphene devices by strain and doping engineering

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundred meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.