卤化硅烯结构、电子和光学性质的第一性原理研究

二维硅烯的商业用途通常受到其零带隙的抑制,限制了其在纳米电子和光电器件中的应用.利用基于密度泛函理论的第一性原理计算,单层硅烯的带隙通过卤原子的化学官能化被成功打开了,并综合分析了卤化对单层硅烯的结构,电子和光学性质的影响.研究结果表明卤化使结构变得扭曲,但保持了良好的稳定性.通过HSE06泛函,全功能化赋予硅烯1.390至2.123 eV的直接带隙.键合机理分析表明,卤原子与主体硅原子之间的键合主要是离子键.最后,光学性质计算表明,I-Si-I单层在光子频率为10.9 eV时达到最大光吸收,吸收值为122000 cm^-1,使其成为设计新型纳米电子和光电器件的有希望的候选材料.     

Penta-SiC5 monolayer: A novel quasi-planar indirect semiconductor with a tunable wide band gap

In this paper, by using of the first principles calculations in the framework of the density functional theory, we systematically investigated the structure, stability, electronic and optical properties of a novel two-dimensional pentagonal monolayer semiconductors namely penta-SiC₅ monolayer. Comparing elemental silicon, diamond, and previously reported 2D carbon allotropes, our calculation shows that the predicted penta-SiC₅ monolayer has a metastable nature. The calculated results indicate that the predicted monolayer is an indirect semiconductor with a wide band gap of about 2.82 eV by using Heyd–Scuseria–Ernzerhof (HSE06) hybrid functional level of theory which can be effectively tuned by external biaxial strains. The obtained exceptional electronic properties suggest penta-SiC₅ monolayer as promising candidates for application in new electronic devices in nano scale.     

Tunable band gap and optical properties of surface functionalized Sc_2C monolayer

Using the density functional theory, we have investigated the electronic and optical properties of two-dimensional Sc_2C monolayer with OH, F, or O chemical groups. The electronic structures reveal that the functionalized Sc_2C monolayers are semiconductors with a band gap of 0.44–1.55 eV. The band gap dependent optical parameters, like dielectric function, absorption coefficients, reflectivity, loss function, and refraction index were also calculated for photon energy up to 20 eV. At the low-energy region, each optical parameter shifts to red, and the peak increases obviously with the increase of the energy gap. Consequently, Sc_2C monolayer with a tunable band gap by changing the type of surface chemical groups is a promising 2D material for optoelectronic devices.     

直接带隙半导体In2(PS3)3单层结构与电子特性的第一性原理研究

高载流子迁移率和可调直接带隙是低维电子器件应用的两个关键特性.但目前发现的此类二维材料稀少.鉴于此在第一性原理计算的基础上,本文系统研究了In₂(PS₃)₃单层的稳定性、电子结构性质和机械性质.研究结果表明,In₂(PS₃)₃单层是具有直接带隙的半导体材料(1.58 eV).在-3%到3%应变下,In₂(PS₃)₃单层的带隙是可以调节的(1.3～1.8 eV).声子谱、分子动力学和弹性常数的计算结果表明,In₂(PS₃)₃单层是热力学、动力学和机械稳定的.此外,In₂(PS₃)₃单层的剥离能(0.21 J m^-2)小于石墨烯的剥离能(0.36 J m^-2),有望像石墨烯一样机械剥离得到.这些优异的的性能使得In     

A new stable polycrystalline Be2C monolayer: A direct semiconductor with hexa-coordinate carbons

In this paper, by means of the first principles calculations based on density functional theory, a new polycrystalline two-dimensional Be₂C namely Be₂C-III monolayer with orthorhombic atomic configuration is predicted. In this proposed monolayer, Be and C atoms are buckled in four different planes, in which each carbon atom binds to six beryllium atoms, while each beryllium atom is shared by three carbon and its three neighboring beryllium in a quasi-planar structure. First principles calculations confirmed that the new Be₂C-III monolayer is energetically, kinetically, and thermally stable. Through electronic properties investigations, it is found that the proposed monolayer is a direct semiconductor with a medium band gap of 1.75 (2.54 eV) calculated by PBE (HSE06) level of theory which can be effectively modulated by biaxial external strains. As a direct band gap semiconductor with high stabilities this new Be₂C monolayer is a promising candidate for application in electronics and optoelectronics devices.     

Alkali-metal(Li,Na, and K)-adsorbed MoSi2N4 monolayer: an investigation of its outstanding electronic,optical, and photocatalytic properties

Single-layer MoSi₂N₄,a high-quality two-dimensional material,has recently been fabricated by chemical vapor deposition.Motivated by this latest experimental work,herein,we apply first principles calculations to investigate the electronic,optical,and photocatalytic properties of alkali-metal(Li,Na,and K)-adsorbed MoSi₂N₄ monolayer.The electronic structure analysis shows that pristine MoSi₂N₄ monolayer exhibits an indirect bandgap(E_g=1.89 eV).By contrast,the bandgaps of one Li-,Na-,and K-adsorbed MoSi₂N₄ monolayer are 1.73 eV,1.61 eV,and 1.75 eV,respectively.Moreover,the work function of MoSi₂N₄ monolayer(4.80 eV)is significantly reduced after the adsorption of alkali metal atoms.The work functions of one Li-,Na-,and K-adsorbed MoSi₂N₄ monolayer are 1.50 eV,1.43 eV,and 2.03 eV,respectively.Then,optical investigations indicate that alkali metal adsorption processes substantially increase the visible light absorption range and coefficient of MoSi₂N₄ monolayer.Furthermore,based on redox potential variations after alkali metals are adsorbed,Li-and Na-adsorbed MoSi₂N₄ monolayers are more suitable for the water splitting photocatalytic process,and the Li-adsorbed case shows the highest potential application for CO₂ reduction.In conclusion,alkali-metal-adsorbed MoSi₂N₄ monolayer exhibits promising applications as novel optoelectronic devices and photocatalytic materials due to its unique physical and chemical properties.     

表面氢化双层硅烯的结构和电子性质

采用密度泛函理论(DFT)广义梯度近似GGA和HSB06方法研究了氢化双层硅烯(silicene)的结构和电子性质, 结果表明: 氢化后的双层硅烯可能存在三种稳定的构型, AA椅型、AB椅型和AA船型, 其中AA椅型和AB椅型结构最为稳定, 氢化后这三种稳定构型材料的性质由零带隙的半金属(semimetal)转变为禁带宽度分别为1.208, 1.437和1.111 eV 的间接带隙的半导体, 采用混合泛函HSB06计算修正得到的带隙分别为1.595, 1.785 和1.592 eV. 进一步分析了在双轴应变下氢化双层硅烯的带隙随应变的关系, 得到应变可以连续的调节材料的带隙宽度, 这些性质有可能应用于未来的纳米电子器件.     

LiB6Si: An indirect band gap semiconductor

Using first-principle calculations, mechanical properties, electronic structure, and Raman spectra of LiB₆Si structure were investigated. The band structures calculated by GGA-PBE and HSE06 methods reveal that LiB₆Si is an indirect band gap semiconductor. The band gap estimated by HSE06 method is about 2.24 eV, which is in good agreement with that of experimental value 2.27 eV. The calculated tensile stress-strain curves of LiB₆Si reveal that [010] direction is the cleavage direction under tensile strains. The calculated Raman spectra of LiB₆Si are also in good agreement with that of measured. The position of the band gap may provide a basis for further photocatalysis research on LiB₆Si.     

First-principles investigations on the mechanical,thermal,electronic,and optical properties of the defect perovskites Cs_2SnX_6(X= Cl,Br, I)

The mechanical properties, thermal properties, electronic structures, and optical properties of the defect perovskites Cs_2SnX_6(X = Cl, Br, I) were investigated by first-principles calculation using PBE and HSE06 hybrid functional. The optic band gaps based on HSE06 are 3.83 eV for Cs_2SnCl_6, 2.36 eV for Cs_2SnBr_6, and 0.92 eV for Cs_2SnI_6, which agree with the experimental results. The Cs_2SnCl_6, Cs_2SnBr_6, and Cs_2SnI_6 are mechanically stable and they are all anisotropic and ductile in nature. Electronic structures calculations show that the conduction band consists mainly of hybridization between the halogen p orbitals and Sn 5s orbitals, whereas the valence band is composed of the halogen p orbitals. Optic properties indicate that these three compounds exhibit good optical absorption in the ultraviolet region, and the absorption spectra red shift with the increase in the number of halogen atoms. The defect perovskites are good candidates for probing the lead-free and high power conversion efficiency of solar cells.     

Novel two-dimensional PdSe phase: A puckered material with excellent electronic and optical properties

By combining structural search and first-principles calculations, we predict a new stable two-dimensional PdSe monolayer, and systematically investigate its structural, electronic and optical properties. The calculated formation enthalpy, phonon spectra and molecular dynamic simulations confirm that PdSe monolayer possesses excellent thermodynamic and dynamic stability. PdSe monolayer is a semiconductor with an indirect band gap of ∼ 1.10 eV. The carrier transport of PdSe monolayer is dominated by hole and exhibits remarkable anisotropy due to the intrinsic structure anisotropy. The optical properties also show obvious anisotropic characteristic with considerable absorption coefficient and broad absorption from the visible to ultraviolet regions. Benefiting from these excellent physical properties, PdSe monolayer is expected to be a promising candidate as electronic and optoelectronic devices.     

Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study

The electronic and structural properties of zigzag aluminum nitride (AlN), gallium nitride (GaN) nanoribbons and Al_xGa_1−xN nanoribbon heterojunctions are investigated using the first-principles calculations. Both AlN and GaN ribbons are found to be semiconductor with an indirect band gap, which decreases monotonically with the increased ribbon width, and approaching to the gaps of their infinite two dimensional graphitic-like monolayer structures, respectively. Furthermore, the band gap of Al_xGa_1−xN nanoribbon heterojunctions is closely related to Al (and/or Ga) concentrations. The Al_xGa_1−xN nanoribbon of width n=8 shows a continuously band gap varying from about 2.2 eV-3.1 eV as x increases from 0 to 1. The large ranged tunable band gaps in such a quasi one dimension structure may open up new opportunities for these AlN/GaN based materials in future optoelectronic devices.     

(Cu,N)共掺杂TiO2/MoS2异质结的电子和光学性能:杂化泛函HSE06

在密度泛函理论的基础上,系统地研究了Cu/N（共）掺杂的TiO₂/MoS₂异质结体系的几何结构、电子结构和光学性质.计算发现,TiO₂/MoS₂异质结的带隙相比于纯的TiO₂（101）表面明显变小,Cu/N（共）掺杂TiO₂/MoS₂异质结体系的禁带宽度也明显地减小,这导致光子激发能量的降低和光吸收能力的提高.通过计算Cu/N（共）掺杂TiO₂/MoS₂的差分电荷密度,发现光生电子与空穴积累在掺杂后的TiO₂（101）表面和单层MoS₂之间,这表明掺杂杂质体系可以有效地抑制光生电子-空穴对的复合.此外,我们计算了在不同压力下TiO₂/MoS₂异质结的几何、电子和光学性质,发现适当增加压力可以有效提高异质结的光吸收性能.本文结果表明,Cu/N（共）掺杂TiO₂/MoS₂异质结和对TiO₂/MoS₂异质结加压都能有效地提高材料的光学性能.     

Electronic and optical properties of black phosphorus doped with Au,Sn and I atoms

In this study, the electronic and the optical properties of monolayer black phosphorus (BP) doped with Gold (Au), Tin (Sn) and Iodine (I) atoms have been investigated by the density-functional theory (DFT) method. In the calculations, the electronic and the optical properties of monolayer BP have been substantially changed with doping. Monolayer BP has a narrow bandgap as 0.85 eV, BP doped with these atoms, results in a metallic behaviour and nearly spin gapless band gap behaviour. The dielectric constant of BP which shows anisotropic optical properties due to different edge states as zigzag and armchair has been changed with doping especially with Au.     

Electronic Structure and Optical Property Calculation of an Oxygen Vacancy in NH_4H_2PO_4 Crystals

The electronic structure of perfect ammonium dihydrogen phosphate(ADP) and defective ADP with an oxygen(O) vacancy are calculated by screened-exchange hybrid density functional HSE06. The optimized structural parameters of the defective ADP crystal are analyzed. The PO_4 tetrahedron with an O vacancy is distorted and its symmetry is broken. The band gap of the defective ADP with an O vacancy is about 1.5 eV lower than the perfect ADP, which is due to the new O vacancy defect states near the valence band maximum. Moreover, more peaks appear in the low-energy region(lower than 6 eV) in the curves of the linear optical properties for the defective ADP. The results indicate that the O vacancy will significantly influence the laser damage performance of ADP crystals.     

Intermediate band insertion by group-IIIA elements alloying in a low cost solar cell absorber CuYSe2: A first-principles study

By using first-principles calculations based on HSE06 hybrid functional, the structural, electronic, and optical properties of CuYSe₂ as a low cost absorber material have been studied. Our results show that CuYSe₂ is a semiconductor with indirect band gap of 1.46 eV and optical band gap of 2.00 eV. Especially, an intermediate band has been found in Ga and In alloyed CuYSe₂, respectively, which can be served as a stepping stone to optical absorption on low energy photons. Therefore, Ga and In alloyed CuYSe₂ with an intermediate band as a new absorber material have been proposed.     

Stability,elastic anisotropy,and electronic properties of Ca_2C_3

The systematic investigations of the mechanical, elastic, and electronic properties, and stability of the newly synthesized monoclinic C2/m-Ca_2C_3 are performed, based on the first-principles calculations. Ca_2C_3 is found to be mechanically and dynamically stable only from 0 GPa to 24 GPa. The elastic anisotropy studies show that Ca_2C_3 exhibits the elastic anisotropy increasing with the augment of pressure. Furthermore, using the HSE06 hybrid functional, the electronic properties of Ca_2C_3 under pressure are calculated. The structure can be regarded as a quasi-direct band gap semiconductor, and the pressure-induced direct-indirect band gap transition is studied in detail.     

Insight into the structural,electronic and elastic properties of AInQ2 (A: K,Rb and Q: S,Se, Te) layered structures from first-principles calculations

First-principles calculations were performed to explore the structural, elastic and electronic properties of the ternary indium chalcogenides AInQ₂ (A: K, Rb and Q: S, Se, Te) in both monoclinic and triclinic phases. This study is carried out by using the first-principles pseudopotential plane-wave (PP–PW) method as implemented in CASTEP code. Both the generalized gradient approximation of Perdew–Burke–Ernzerhof scheme (GGA–PBE) and the Heyd–Scuseria–Ernzerhof (HSE06) hybrid functional were used to treat the exchange-correlation interactions. In order to confirm the previous reports and to understand the effect of symmetry in determining the physical properties of these layered materials we have calculated the structural and the electronic properties at the equilibrium lattice constant for both the systems. The single-crystal elastic constants C_{i j} are calculated using the stress-strain approach. The elastic moduli of the polycrystalline aggregates and their related properties are obtained in the framework of Voigt–Reuss–Hill approximations. Electronic band structure indicates the semiconducting behaviour with a direct band gap at Γ–Γ. The results obtained from the (HSE06) hybrid functional are in excellent agreement with the available experimental data and computed results for the monoclinic and triclinic structures.     

Zn1-xMgxO电子结构及光学性质的第一性原理GGA+U方法研究

Mg掺杂ZnO形成的固溶体Zn_1-xMg_xO（ZMO）（0 ≤ x ≤ 0.25）是一种带隙较宽、电子学性质可调控的半导体材料,在薄膜太阳电池及光电设备的透明电极等方面具有重要的应用价值。基于密度泛函理论下的第一性原理超软赝势方法,采用GGA+U计算了ZMO的电子结构和光学性质。计算结果表明,随着x值的增加,ZMO的禁带宽度由x=0时的3.32 eV增加到x=0.25时的3.78 eV;光吸收边及反射谱和能量损失谱均发生明显蓝移,峰值存在于紫外光区。计算结果与实验结论相符合。     

Strain-tunable electronic and optical properties of h-BN/BC_3 heterostructure with enhanced electron mobility

By using first-principles calculation, we study the properties of h-BN/BC_3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC_3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC_3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast,applying an external strain can mildly modulate the electronic band structure of h-BN/BC_3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC_3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties.     

A new quaternary semiconductor compound (Ba2Sb4GeS10): Ab initio study

Abstract

The newly synthesised Ba₂Sb₄GeS₁₀ compound is notable because of the interesting features of the quaternary Sb-containing materials. The first principle method has been used to determine the physical properties of this compound. In particular, the electronic structure has been analysed using both conventional GGA-PBE and HSE06 functional. The values of the band gap for PBE and HSE06 calculations were 1.324 and 1.84 eV, respectively. The calculated elastic constants were used to predict polycrystalline mechanical properties. The estimated Vickers hardness (2.7 GPa) values show that Ba₂Sb₄GeS₁₀ is soft matter. Moreover, the vibrational properties of the compound have been studied. The calculation of the elastic constants and phonon dispersion curves indicates that the Ba₂Sb₄GeS₁₀ compound is stable both mechanically and dynamically. Furthermore, the minimum thermal conductivity and optical properties, such as dielectric functions and energy loss function, have also been discussed in detail in this paper.