Confinement of acoustical vibrations in a semiconductor planar phonon cavity

Extending the idea of optical microcavities to sound waves, we propose a phonon cavity consisting of two semiconductor superlattices enclosing a spacer layer. We show that acoustical phonons can be confined in such layered structures when the spacer thickness is an integer multiple of the acoustic half-wavelength at the center of one of the superlattice folded minigaps. We report Raman scattering experiments that, taking profit of an optical microcavity geometry, demonstrate unambiguously the observation of a phonon-cavity confined acoustical vibration in a GaAs/AlAs based structure. The experimental results compare precisely with photoelastic model calculations of the Raman spectra.     

AC susceptibility of thin Pb films in intermediate and mixed state

Thin films of type I superconductors of a thickness comparable or less than a flux penetration length behave like type II superconductors in a mixed state. With decreasing film thickness normal domains carrying a magnetic flux get smaller with smaller number of flux quanta per domain and finally transform into single quantum flux lines, i.e. quantum vortices similar to those found in type II superconductors. We give an evidence of this behavior from the measurements of the nonlinear response of a total magnetic moment to an applied AC magnetic field, directly from the temperature dependence of an AC susceptibility.     

Structural phase transition in the mixed state of superconducting films in a parallel magnetic field

A thin film of a second-kind superconductor in a magnetic field parallel to the surface of the film is considered in the London approximation. It has been shown that if bulk pinning is absent and the suppression of super-conductivity by the magnetic field is negligible, the splitting of a vortex chain in the film occurs as a structural phase transition either of the first or second order, depending on the ratio of the thickness of the film d to the penetration depth of the magnetic field λ. The ratio d/λ, and thereby the character of the transition in the vortex lattice, can be changed by varying the temperature. The corresponding critical thicknesses of films and field ranges in which this effect can be observed experimentally have been calculated.     

Metastable phase formation and structural change characteristics of vapor deposited semiconductor films

Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb₂Te₄ thin films prepared by RF-magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast structural phase transformation.     

Spin rings in bistable planar semiconductor microcavities

A remarkable feature of exciton-polaritons is the strongly spin-dependent polariton-polariton interaction, which has been predicted to result in the formation of spin rings in real space [Shelykh, Phys. Rev. Lett. 100, 116401 (2008)]. Here we experimentally demonstrate the spin bistability of exciton polaritons in an InGaAs-based semiconductor microcavity under resonant optical pumping. We observe the formation of spin rings whose size can be finely controlled in a spatial scale down to the micrometer range, much smaller than the spot size. Demonstration of optically controlled spin patterns in semiconductors opens way to the realization of spin logic devices and spin memories.     

Hopping conduction in semiconductor films

The topological picture of the infinite cluster near the percolation threshold is used to predict the exponential dependence of the planar hopping conduction on the thickness of the moderately thin films.     

Nanostructurization of thin chalcogenide glassy semiconductor films during formation of relief-phase hologram structures

The surface roughness of thin three-component chalcogenide glassy semiconductor (CGS) films during formation of relief-phase hologram structures has been investigated. It is established that the holograms formed on such films undergo parasitic surface nanostructurization, which determines their short-wavelength applicability limit. It is suggested that this structurization is caused by the initial cluster structure of a CGS film, which leads to spatial variations in its etching rate in a developer. It is shown that the maximum variations in the etch rate and cluster size are characteristic of unexposed areas of CGS films and that these variations significantly decrease with increasing exposure.

     

Electron energy bands in semiconductor films

The possible nature of the band structure in crystal films is examined on the basis of a consideration of the symmetry possessed by their structure.For germanium and silicon of the p- and n-types with various different orientations of the film the connection is found between the band structures of the film and of the bulk crystal. The result is obtained that with the orientation [111] an n-germanium film, like an n-silicon film with the same orientation must have a single-trough minimum.     

Stability limits, structure, and relaxation of a mixed state in superconducting films with an edge barrier

The interval of external magnetic fields where a mixed state can exist in a superconducting film with a fixed value of the flux is determined. The equilibrium and reversible magnetization curves of the sample are calculated, and the dynamics of the magnetic relaxation in the film is described. Nonuniform deformation of the Abrikosov lattice is predicted. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 5, 405–410 (10 March 1997)     

The room-temperature ferromagnetism of defect-rich ZnMgO semiconductor thin films

The positive temperature coefficient of resistance (PTCR) characteristics of Na₂Ti₆O₁₃ (NT)-doped 0.94BaTiO₃–0.06(Bi_0.5Na_0.5)TiO₃ (BBNT) ceramics were investigated in order to evaluate the effect of NT as a new additive for lead-free PTCR thermistor application. The BBNT ceramic sintered at 1325°C exhibited a relatively high Curie temperature (T _C ) of 158°C while its PTCR characteristic was not satisfactory for thermistor application. However, doping with NT significantly influenced the PTCR behavior of BBNT ceramic. It is considered that NT was responsible for grain growth of the BBNT by forming a liquid phase during sintering due to its low melting temperature of 1300°C. The grain growth resulted in the enhanced PTCR characteristics of BBNT ceramic. In particular, 0.1 mol% NT doped BBNT ceramic exhibited excellent PTCR performance of low resistivity at room temperature (1.6×10² Ω cm), resistivity increase near T _C (1.28×10⁴) and high T _C of 158°C, suitable for lead-free PTCR thermistor application.     

一种获得半导体薄膜光学参数的方法

实现薄膜光学参数的简便测量对于薄膜的制备和应用具有重要意义。引入适用于半导体材料的Forouhi_Bloomer模型,用其表征薄膜折射率与色散的关系。考虑到粗糙度的影响,假设薄膜厚度服从正态分布,给出了模拟退火法与迭代法相结合、由可见光光谱测定薄膜光学参数的方法。作为尝试,以硅系薄膜为例进行了计算。结果表明,获得的厚度与用椭偏仪测量的结果较为吻合。该方法适用于研究和测量半导体薄膜的光学性能和膜厚,具有很高的实用价值。     

Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

We use the data on the pressure (up to P=1.5 GPa) and field (up to H=17 kOe) dependence of the Hall coefficient and the resistivity at 77.6 and 300 K in p-CdSnAs₂〈Cu〉 to calculate the effective kinetic characteristics of the charge carriers, the density and mobility of the conduction electrons and the holes of the deep acceptor and valence bands, in an interval of excess-acceptor densities N _ext ranging from 10¹⁰–10¹⁷ cm⁻³. We establish that in a heavily doped semiconductor with a deep impurity band at the tail of the density of states of the intrinsic band, with unequal donor and acceptor densities, a a heavily doped and fully compensated semiconductor state is realized under hydrostatic compression. The threshold value of the pressure that initiates the transition into such a state, P _c, depends on the extent to which the impurity band is populated. In p-CdSnAs₂〈Cu〉 at N _ext=N _A, where N _A is the density of deep acceptors, and T⩽77.6 K the value of P _c amounts to 10⁻⁴ GPa. As the population of the deep acceptor band grows, P _c increases and in the limit becomes infinite. We discuss the special features of the electrophysical properties of p-CdSnAs₂〈Cu〉 arising from the absence of an energy gap between the states of the conduction band and those of the deep acceptor band. Zh. éksp. Teor. Fiz. 111, 562–574 (February 1997)     

Power fluctuations of a weakly optically-injected semiconductor laser in a period-one state

The frequency spectrum and the power output of a weakly optically-injected semiconductor laser in a period-one state are investigated. It is found that the oscillations in the power output consist of three components each caused by different physical effects, namely the relaxation oscillation frequency, the detuning between master and the slave laser frequency and the photon roundtrip time. For each set of parameters the spatio-temporal dynamics are obtained and the same internal oscillations occur.