New oxygen donors in silicon

Oxygen donor traps and oxygen-related precipitates are investigated by deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). The so-called New Donors (ND's) occur after thermal treatments in the temperature range of 650 °–800 ° C. They have a continuous distribution of trap states with respect to energy in the band gap of Si. The concentration of the trap states increases towards the conduction band edge. The precipitates observed are mainly platelets and ribbon-like defects. The formation and annihilation kinetics of ND traps and oxygen-related precipitates are correlated. An SiO _x Interface Model is proposed to explain the origin and the donor-like behavior of the ND traps. The ND trap spectrum is composed of two different types of trap states: interface states at the surface of precipitates and bound states in the Coulombic wells of a fixed positive charge which is located in the SiO _x precipitates.     

Laser and electrical current induced phase transformation of In<Subscript>2</Subscript>Se<Subscript>3</Subscript> semiconductor thin film on Si(111)

Phase transformation of thin film (∼30 nm)In₂Se₃/Si(111) (amorphous→crystalline) was performed by resistive annealing and the reverse transformation (crystalline→amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, binary chalcogenide semiconductor, In₂Se₃ is of interest for non-volatile phase-change memory. Amorphous In _x Se _y was deposited at room temperature on Si(111) after pre-deposition of a crystalline In₂Se₃ buffer layer (0.64 nm). Upon resistive annealing to 380°C, the film was transformed into a γ-In₂Se₃ single crystal with its {0001} planes parallel to the Si(111) substrate and parallel to Si , as evidenced by scanning tunneling microscopy, low energy electron diffraction, and X-ray diffraction. Laser annealing with 20-ns pulses (0.1 millijoules/pulse, fluence≤50 mJ/cm²) re-amorphized the region exposed to the laser beam, as observed with photoemission electron microscopy (PEEM). The amorphous phase in PEEM appears dark, likely due to abundant defect levels inhibiting electron emission from the amorphous In _x Se _y film.     

Transverse Nernst-Ettingshausen effect, resonant scattering, and superconductivity in SnTe: In

The temperature dependences of the coefficient of the transverse Nernst-Ettingshausen effect in SnTe: In samples with different indium contents (1–16 at %) in the temperature range 100–300 K and the electrical resistivity at temperatures of 1.2–4.2 K and in magnetic fields of up to 10 kOe are investigated. The data obtained indicate the presence of resonant hole scattering into the band of quasi-local In impurity states in Sn_1?x In _x Te samples with In content x ≥ 0.05 and a superconducting transition with a critical temperature T _c ～ 1.5–2.2 K. The SnTe: In samples with the degree of filling of impurity states by electrons, which is close to 1/2, and the Fermi level ?_F pinned in the vicinity of the minimum energy dependence of the relaxation time τ(?) are characterized by inhomogeneities of a new type, i.e., inhomogeneities of the scattering parameter r = ?lnτ/?ln?| $ \varepsilon _F The temperature dependences of the coefficient of the transverse Nernst-Ettingshausen effect in SnTe: In samples with different indium contents (1–16 at %) in the temperature range 100–300 K and the electrical resistivity at temperatures of 1.2–4.2 K and in magnetic fields of up to 10 kOe are investigated. The data obtained indicate the presence of resonant hole scattering into the band of quasi-local In impurity states in Sn_1−x In _x Te samples with In content x ≥ 0.05 and a superconducting transition with a critical temperature T _c ∼ 1.5–2.2 K. The SnTe: In samples with the degree of filling of impurity states by electrons, which is close to 1/2, and the Fermi level ɛ_F pinned in the vicinity of the minimum energy dependence of the relaxation time τ(ɛ) are characterized by inhomogeneities of a new type, i.e., inhomogeneities of the scattering parameter r = ϖlnτ/∂lnɛ|, which are induced by fluctuations of the degree of filling of quasi-local states by electrons. Original Russian Text ? S.A. Nemov, V.I. Proshin, G.L. Tarantasov, R.V. Parfen’ev, D.V. Shamshur, A.V. Chernyaev, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 461–464.     

Oxygen content of superconducting Ba2YCu3O6.5+x

Single-phase non-stoichiometric Ba₂YCu₃O_6.5+x with –0.248x0.300 can be obtained by annealing prereacted samples at 0.01–1 bar oxygen partial pressure. Samples withx=–0.248 are semiconducting, samples at 0.239x0.300 are metallic withT _c increasing from 92.2 to 94.0 K for annealing in 0.02–1 bar O₂.     

Longitudinal magnetoresistance of quenched and annealed gold

The deviations of longitudinal magnetoresistance from Kohler's rule have been studied in polycrystalline gold wires. Quenched-in vacancies have been identified as large-angle scatterers of conduction electrons. No small-angle component, similar to that observed earlier for vacancies in platinum, has been detected.Stacking fault tetrahedra formed during low-temperature annealing of quenched samples have been shown to contribute significantly to small-angle scattering, which is probably related to stacking faults themselves. The residual resistivity increment _SF=(4·2±0·5)×10^–18 m² due to stacking faults in gold has been determined.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

The transport properties of warm and hot electrons in selectively dopedn-Al _x Ga_1–x As/GaAs heterostructures created by electric fields up to 500 V/cm were studied by Hall effect, conductivity, and Shubnikov-de Haas measurements at lattice temperatures from 4.2 to 300 K. Hall measurements revealed a substantial decrease of electron mobility and also of sheet electron concentration at 77 K with enhanced electric field. The accelerated 2D electrons are partly scattered into the low-mobility first excited (E ₁) subband, and they are partly trapped in immobile states located in the Al_xGa_1–xAs near the interface. Consequently, two differentv(E) characteristics were obtained at 77 K. The 2D electrons populating only the lowest (E ₀) subband exhibit a velocity of v-2×10⁷ cm/s at 500 V/cm, while the averaged velocity due to all electrons reaches a value of v-1.5×10⁷cm/s at 500 V/cm. The analysis of the Shubnikov-de Haas oscillations and Fast Fourier transformation of the data manifested that the 2D electrons are very rapidly accelerated at 4.2 K and achieve electron temperatures much higher than the lattice temperature at electric fields as low as 1 V/cm. The major cooling process for these electrons is scattering into the low-mobilityE ₁ subband.     

Incoherent tunnelling of positive muons and trapping by vacancies in electron-irradiated aluminium

We have measured the transverse spin relaxation of positive muons ⁺ in Al single crystals after irradiation at 150 K with 3 MeV electrons. The relaxation functions agree with those expected for diffusion-limited trapping of the ⁺ in monovacancies. Between 215 K and 60 K the ⁺ diffusivity is well described by the Flynn-Stoneham law (multi-phonon incoherent tunnelling between ground states) with an activation enthalpyH _a = (30±2) meV. At lower temperatures, few-phonon (in particular one-phonon) processes become important. The decrease of the vacancy concentration by a factor of 100 during annealing between 227 K and 267 K has been studied.     

Temperature characteristics of positron trapping at defects in electron-irradiated silicon

Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l0¹⁹e/cm². In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI ₂ during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section _t(T) T ⁿ withn= –1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.A.B.O.S., on leave from University of Kinshasa, Zaïre     

Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Thin films of SiO_x having thickness of 0.2 μm and oxygen content x=1.5 or 1.7 are prepared by thermal evaporation of SiO in vacuum. Then some samples are furnace annealed for various times (in the range ) at 770 and 970 K and some others are rapid thermal annealed at 970 K for 30 and 60 s. Photoluminescence (PL) measurements are carried out at room temperature using the 442 nm line of a He-Cd laser and the 488 nm of an Ar laser for excitation. The effect of the annealing conditions and wavelength of the exciting light on the shape of the PL from these films is explored. The deconvolution of the PL spectra measured with the 442 nm line from samples annealed at 770 K for reveals two distinct PL bands peaked at around 2.3 and 2.5 eV, which do not shift appreciably with increasing annealing time. In addition, at longer annealing times, a weak third band is resolved centred in the range 2.0-2.1 eV. It exists in the spectra of all samples annealed at 970 K being more prominent in the samples with x=1.5. The intensity of this band shows different dependences on the annealing time in the films with different initial composition. The results obtained are discussed in terms of radiative recombination via defect states in the SiO_x matrix (the 2.5 eV band) or at the a-Si-SiO_x interface (the 2.3 eV band). The band centred in the 2.0-2.1 eV range is related to recombination in amorphous silicon nanoparticles grown upon annealing.     

One-and-a-Half Quantum de Finetti Theorems

When n − k systems of an n-partite permutation-invariant state are traced out, the resulting state can be approximated by a convex combination of tensor product states. This is the quantum de Finetti theorem. In this paper, we show that an upper bound on the trace distance of this approximation is given by , where d is the dimension of the individual system, thereby improving previously known bounds. Our result follows from a more general approximation theorem for representations of the unitary group. Consider a pure state that lies in the irreducible representation of the unitary group U(d), for highest weights μ, ν and μ + ν. Let ξ_μ be the state obtained by tracing out U _ν. Then ξ_μ is close to a convex combination of the coherent states , where and is the highest weight vector in U _μ. For the class of symmetric Werner states, which are invariant under both the permutation and unitary groups, we give a second de Finetti-style theorem (our “half” theorem). It arises from a combinatorial formula for the distance of certain special symmetric Werner states to states of fixed spectrum, making a connection to the recently defined shifted Schur functions [1]. This formula also provides us with useful examples that allow us to conclude that finite quantum de Finetti theorems (unlike their classical counterparts) must depend on the dimension d. The last part of this paper analyses the structure of the set of symmetric Werner states and shows that the product states in this set do not form a polytope in general.     

Variation of electronic properties and evidence for a reversible defect induced metal to semiconductor transition in PbMo6S8 observed by ion irradiation and subsequent annealing of thin films

The influence of lattice disorder varied by low temperature irradiation with 20 MeV³²S-ions and subsequent isochronal thermal annealing on Hall-effectR _H (T), resistivityp(T) and superconducting critical temperatureT _c of thin films of the Chevrel-phase PbMo₆S₈ is reported. It is found that the well known, unusual sensitivity ofT _c is correlated with drastic changes of normal state transport properties e.g.R _H (T) andp(T). In the low fluence regime (6·10¹³ cm^–2,T _c 2 K) annealing leads to a monotonous restoration of the initial properties with the main recovery occurring at temperatures as low as 500 K. Contrary to this, annealing of highly disordered samples (10¹⁵ cm^–2) creates semiconductor-like conduction behavior. This manifests itself by a strong increase of the electrical resistivity with decreasing temperature which becomes more pronounced at higher annealing temperaturesT _A . AfterT _A =800 K the resistivityp(15K) is enhanced by more than a factor of 1000 withp(15K)/p(280 K)=210 compared to as irradiated. Further annealing at 900 K and 1000K results in the reappearance of metallicp(T)-behavior and superconductivity (T _c >10K). The observed effects can be understood by systematic changes of the electronic density of states consistent with an earlier proposed defect model.     

Gd3+-ESR in the intermediate valent cerium compounds Ce x La1-x Os2

In the intermediate valent compounds Ce _x La_1–x Os₂ the Gd³⁺-ESR shows a non-linear increase of the linewidth H(T) in the temperature range 4.2K<T<300K for 0.3x1.0. This non-linearity of the thermal broadening is strongly altered by changing the Ce-concentration. The experimental results H(T,x) can quantitatively be described via hybridization of conduction electrons with Ce4f electrons: Due to hybridization, the Ce4f states are broadened but remain localized. The conduction electron density of states is reduced in the vicinity of the 4f states. In addition we observe a maximum in the electrical resistivity (T) of CeOs₂ at 270 K.     

Dramatic change of optical properties at a quantum critical point in the heavy fermion system

Optical properties of have been studied via infrared spectroscopy. For x>0.3, a hump in the optical conductivity σ₁ is observed at about 0.2 eV, resulting from strong hybridization between conduction electrons and Ce 4-f electronic states. For x0.3, in contrast, no such hump is observed. The low frequency plasmon indicating the existence of heavy particles is also observed below coherence temperature T^* for x>0.3.     

Auger electron spectroscopy study on the Cr/Al2O3 interfacial reactions

Interfacial reactions of evaporated chromium with surface has been studied using Auger electron spectroscopy (AES). The results reveal that the interfacial region consists of a mixture, which is a double oxide of Cr and Al or two separated oxides. After annealing, the chromium oxide and the metallic Al produced by reduction of the Al³⁺ ions were easily detected by AES at the interface. We suggest that the interfacial reaction occurs mainly by the charge transfer from the 3d electrons of Cr atoms to O 2p orbitals of the Al₂O₃ substrate. The annealing at higher temperature (973 K) is favourable to promote the interfacial reaction between the surface oxygen and the initial few atomic monolayers of the deposited chromium. The results also showed that the change of the relative Auger peak-to-peak height (APPH(%)) of the Cr LMM group peaks can be used as an index to identify the oxidation states of chromium at the Cr/Al₂O₃ interface.     

Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

The formation of silicon nanoclusters embedded in amorphous silicon nitride (SiN_x:H) can be of great interest for optoelectronic devices such as solar cells. Here amorphous SiN_x:H layers have been deposited by remote microwave-assisted chemical vapor deposition at 300 °C substrate temperature and with different ammonia [NH₃]/silane [SiH₄] gas flow ratios (R=0.5−5). Post-thermal annealing was carried out at 700 °C during 30 min to form the silicon nanoclusters. The composition of the layers was determined by Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA). Fourier transform infrared spectroscopy (FTIR) showed that the densities of SiH (2160 cm⁻¹) and NH (3330 cm⁻¹) molecules are reduced after thermal annealing for SiN:H films deposited at flow gas ratio R>1.5. Breaking the SiH bonding provide Si atoms in excess in the bulk of the layer, which can nucleate and form Si nanostructures. The analysis of the photoluminescence (PL) spectra for different stoichiometric layers showed a strong dependence of the peak characteristics (position, intensity, etc.) on the gas flow ratio. On the other hand, transmission electron microscopy (TEM) analysis proves the presence of silicon nanoclusters embedded in the films deposited at a gas flow ratio of R=2 and annealed at 700 °C (30 min).     

Effect of Ca doping on the superconducting properties of GdBaSrCu3O7−δ bulk samples

Gd_1−xCa_xBaSrCu₃O_7−δ samples (0  x  0.1) were prepared via solid-state reaction. Four-point probes method was used for resistance versus temperature measurements. Results show decrease in T_c by increasing x content. This variation is assumed to be irrelevant to the different phases or impurity effects since X-ray patterns show all samples are tetragonal single-phase. Ca doping decreases the oxygen content and lattice parameters of the samples. It is suggested that Ca prevents the dislocation of oxygen, and then disrupts the hole concentration of the system and antiferromagnetic correlation at CuO₂ planes. Subsequently, destroys the superconductivity of the samples.     

On the high resolution spectroscopy and intramolecular potential function of SO2

Two weak stretching bands, ν₁ + 3ν₃ and 3ν₁ + ν₃, of the sulfur dioxide molecule have been recorded at high resolution and analyzed for the first time with using a Fourier transform Bruker IFS-120 HR interferometer. About 1000 transitions with J^max. = 51, , and 900 transitions with J^max. = 53, have been assigned to the bands ν₁ + 3ν₃ and 3ν₁ + ν₃, respectively. Analysis of the recorded spectra was made using the model of isolated vibrational states. Parameters obtained from the fit reproduce the initial experimental ro-vibrational energies with the rms deviation of 0.0006 and 0.0012 cm⁻¹ for the bands, 3ν₁ + ν₃ and ν₁ + 3ν₃, respectively. The problem of determination of the intramolecular potential function of SO₂ is discussed.     

Si-based nanoscale SiO2 islands and light-emitting source array

A SiO₂ nanoscale island array was fabricated on a Si substrate by using anodic porous alumina as a mask. Transmission electron microscopy observation and the atomic force microscopy pattern show that the arrangement of SiO₂ islands has a quasi-hexagonal symmetry. Ge ions with a dose of 1×10¹⁷ cm^-2 were subsequently implanted into the SiO₂ island array to form Ge-related light-emitting centers. The photoluminescence (PL) spectra of as-implanted and annealed samples show three PL bands at 370, 400 and 415 nm. Their intensities reach maximums in the sample with an annealing temperature of 700 °C. Spectral analysis suggests that the 370 and 415 nm PL bands arise from Ge-Ge and Ge-Si defect centers, while the 400 nm PL is related to GeO color centers in the SiO₂ islands. The existence of these PL bands indicates the formation of a Si-based nanoscale light source array. PACS 78.55.Mb; 42.72.Bj; 68.65.+g     

Azimuthal anisotropy of electrons from heavy flavor decays in \sqrt{s_{NN}} =200 GeV Au-Au collisions at PHENIX

The PHENIX experiment has measured the azimuthal anisotropy parameter v₂, the second harmonic of the azimuthal distribution, for electrons at mid-rapidity (|η|<0.35) as a function of transverse momentum (0.5<p_T (GeV/c)<5.0) in Au+Au collisions at  =200 GeV. From the result we have calculated the non-photonic electron v₂, which is expected to reflect charm quark azimuthal anisotropy, by subtracting the v₂ of electrons from other sources such as photon conversions and Dalitz decays.     

Optical properties of semiconducting iron disilicide thin films

The iron silicides samples were prepared by annealing of iron films evaporated onto silicon wafers and capped with amorphous silicon thin overlayers. Semiconducting FeSi₂ phase is formed by annealing at the temperatures from 550°C to 850°C. The optical properties of the FeSi₂ layers have been deduced from reflectance and transmittance measurements carried out in the temperature range of (77–380) K. The spectral dependence of the absorption coefficient favours direct allowed transitions with forbidden energy gap of 0.87eV at the room temperature. The application of a simple three-parameter semiempirical formula to the temperature dependence of the direct energy gaps leads to the following best fit parameters: the band gap at zero temperature E _g (0) = (0.895 ± 0.004)eV, the dimensionless coupling parameter S = 2.0 ± 0.3, and the average phonon energy <hw> = (46 ± 8)meV. By examining all the reported triplets of parameters for -FeSi₂ fabricated by different techniques and thermal processes, an obvious discrepancy can be found for the lattice coupling parameter and average phonon energy, although the bandgaps at 0 K are very similar. Unlike the theoretical prediction and the earlier reported result, our results do not show any evidence of a particularly strong electron-phonon interaction, which would give the lower carrier mobilities. -FeSi₂ seems to be an intriguing material where states with energies near the band edges permit ambiguous interpretation of the character of transitions. From optical model for the thin film-substrate system we found the index of refraction to be (5–5.9) in the photon energy interval from 0.65 to 1.15eV. There is also indication of an additional higher-energy absorption edge at l.05eV.