Linear expansion coefficient of the SiC/Si biomorphic composite

In the temperature range 100–650 K, the linear expansion coefficient β was measured for the SiC/Si biomorphic composite, a new cellular ecoceramic fabricated from a porous cellular carbon matrix prepared through pyrolysis of wood (white eucalyptus) in an argon ambient with subsequent infiltration of molten Si into the channels of the matrix and the formation of 3C-SiC. The SiC/Si samples studied had an “excess” ～30% volume concentration of Si and a porosity of ～13–15%. The measurements were conducted on samples cut along (β_∥) and across (β_⊥) the tree growth direction. The measured values of β(T) of SiC/Si are compared with literature data available for the linear expansion coefficients of Si and 3C-SiC.     

Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5–300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ～30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.     

Thermal conductivity of the SiC/Si biomorphic composite, a new cellular ecoceramic

The thermal conductivity κ and electrical resistivity ρ of a SiC/Si biomorphic composite were measured at temperatures T = 5–300 K. The composite is a cellular ecoceramic fabricated by infiltrating molten Si into the channels of a cellular carbon matrix prepared via pyrolysis of wood (white eucalyptus) in an argon ambient. The κ(T) and ρ(T) relations were measured on a sample cut along the direction of tree growth. The experimental results obtained are analyzed.     

Thermal and electrical properties of a white-eucalyptus carbon preform for SiC/Si ecoceramics

The thermal conductivity κ and electrical resistivity ρ of a white-eucalyptus cellular carbon preform used to fabricate silicon-carbide-based (SiC/Si) biomorphic ceramics have been measured in the 5-to 300-K temperature interval. The carbon preform was obtained by pyrolysis (carbonization) of white-eucalyptus wood at 1000°C in an argon ambient. The κ(T) and ρ(T) relations were measured on samples cut along the tree growth direction. The experimental data obtained were processed.     

Electrical properties of bio-SiC and Si components of the SiC/Si biomorphic composite

The electrical resistivity ρ of bio-SiC, a highly porous cellular material prepared from a biomorphic composite SiC/Si based on white eucalyptus wood through the chemical removal of silicon, was measured in the temperature range 5–100 K. The electrical resistivity of bio-SiC was found to be anisotropic along and across the cellular pores. The activation energy of charge transfer in bio-SiC was estimated. The measured values of ρ for the SiC/Si biomorphic composite and bio-SiC were used to determine the electrical resistivity ρ and the carrier concentration in silicon, which is one of the constituents of the composite.     

Elastic and inelastic properties of SiC/Si biomorphic composites and biomorphic SiC based on oak and eucalyptus

This paper reports on the results of a comparative investigation into the elastic and microplastic properties of biomorphic SiC/Si composites and biomorphic SiC prepared by pyrolysis of oak and eucalyptus with subsequent infiltration of molten silicon into a carbon matrix and additional chemical treatment to remove excess silicon. The acoustic studies were performed by the composite oscillator technique using resonant longitudinal vibrations at frequencies of about 100 kHz. It is shown that, in biomorphic SiC (as in biomorphic SiC/Si) at small-amplitude strains ε, adsorption and desorption of the environmental (air) molecules determine to a considerable extent the Young’s modulus E and the internal friction (decrement of acoustic vibrations δ) and that the changes in E and δ at these amplitudes are irreversible. The stress-microplastic strain curves are constructed from the acoustic data for the materials under study at temperatures of 100 and 290 K.     

Anisotropy of electric resistivity of Sapele-based biomorphic SiC/Si composites

The electrical resistivity of Sapele-based biomorphic SiC/Si materials was measured in a wide temperature range from 10 K to room temperature. The samples were fabricated by the reactive infiltration of molten silicon into a carbonized Sapele (African Entandrophragma Cylindricum) wood preform. All the samples studied contained residual Si (10–35 wt %). It was found that the resistivity-temperature (ρ(T)) dependences have semimetallic behavior which becomes very close to linear metallic behavior at 100 < T < 300 K. The obtained values of resistivity were quite low (ρ ≈ 0.002–0.02 Ω cm) and showed strong anisotropy: the resistivity along the wood growth axis was several times lower than that in the perpendicular direction. The extent of this anisotropy was in correlation with the amount of residual Si (and, hence, with the amount of residual porosity) in a sample. The resistivity perpendicular to the wood growth axis drastically increased with the Si content, whereas the resistivity parallel to it was practically independent of the Si content. It is suggested that the presence of residual carbon in the samples and carrier scattering at SiC/Si interphases could determine the observed character of ρ(T) dependences.     

Heat capacity of silicon carbide at low temperatures

The heat capacity of biomorphic silicon carbide, a high-porosity material with specific cellular pores, is measured in the temperature range 3.5–60 K. Biomorphic silicon carbide is prepared by the chemical removal of excess silicon from the SiC/Si biomorphic composite, a product of eucalyptus wood. It is shown that the major contribution to the heat capacity of biomorphic SiC comes from surface vibrational modes.     

Thermal conductivity of bio-SiC and the Si embedded in cellular pores of the SiC/Si biomorphic composite

The thermal conductivity of bio-SiC, a heavily defected material with specific cellular pores (channels), was studied in the temperature range 5–300 K. The bio-SiC sample was prepared from the SiC/Si biomorphic composite through the chemical removal of silicon. The thermal conductivity of silicon embedded in cellular pores of the SiC/Si biomorphic composite was determined.     

Young’s modulus and internal friction of the SiC/Si biomorphic composite based on the sapele wood precursor

The effect of the vibrational strain amplitude on the Young’s modulus and ultrasound absorption (internal friction) of a SiC/Si biomorphic composite prepared by pyrolysis of sapele wood followed by infiltration of silicon were investigated. The studies were conducted in air and in vacuum by the acoustic resonance method with the use of a composite vibrator in longitudinal vibrations at frequencies of about 100 kHz. Measurements performed on sapele wood-based bio-SiC/Si samples revealed a substantial effect of adsorption-desorption of molecules contained in air on the effective elasticity modulus and elastic vibration decrement. Microplastic characteristics of the SiC/Si composites prepared from wood of different tree species were compared.     

Elasticity and inelasticity of the SiC/Al-13Si-9Mg biomorphic metal ceramics

The acoustic investigations of the elastic (Young’s modulus) and microplastic properties of a composite material, the SiC/Al-13Si-9Mg biomorphic metal ceramic, were performed. The ceramic was prepared by infiltration of the Al-13Si-9Mg melt into porous silicon carbide derived from wood of two species of trees, beech and sapele. The measurements were performed with a composite piezoelectric vibrator under resonance conditions, with rod-shaped samples vibrated longitudinally at about 100 kHz over a wide range of vibrational strain amplitudes, which included both the linear (amplitude-independent) and nonlinear (microplastic) regions. It was shown that the Young’s modulus and the microplastic properties of the composite are anisotropic and depend substantially on the tree species, particularly when longitudinal vibrations are excited in samples cut along the tree fibers.     

Heat capacity and velocity of sound in the SiC/Si biomorphic composite

The specific heat at constant pressure and the velocity of sound in the SiC/Si biomorphic composite prepared from white eucalyptus wood are measured in the range 3.5–65 K and at 77 K, respectively. The heat capacity of the SiC/Si sample under investigation is calculated within three proposed models according to the Kopp-Neumann additivity rule.     

TEM-characterization of magnetic samarium- and cobalt-rich-nanocrystals formed in hexagonal SiC

Using analytical transmission electron microscopy techniques, nanocrystals embedded in 4H–SiC are studied which formed after high dose samarium (Sm), cobalt (Co), and Sm-and-Co-ion implantations and annealing. SmSi₂, Sm₅C₂, Co₂Si and SmCo-rich nanocrystals have been identified in terms of their crystallography, shape, strain, size, and orientation relationship to the matrix. It is shown, moreover, that cluster creations of foreign atoms (nanocrystals) and of vacancies (voids) are connected and their sizes increase with implantation dose. Carbon onions surrounding the nanocrystals have been found and this carbon excess has been interpreted as a consequence of preferred formation of foreign atom-silicide nanocrystals. For the case of Co implanted 4H–SiC, Lorentz microscopy has been applied revealing both non-magnetic and single-domain ferromagnetic nanocrystals.     

Scaling of magnetoresistance of carbon nanomaterials in Mott-type hopping conductivity region

A method for analyzing data on Mott hopping conduction in a magnetic field, ρ ～ exp[(T ₀/T)^α], based on scaling relation ln[ρ(H)/ρ(0)] = (T ₀/T)^α F(H/T) for the spin-polarized contribution to the magnetore-sistance is proposed. This general approach is tested for a carbon nanomaterial synthesized from single-wall carbon nanotubes under high pressure (up to 7 GPa). The experiments confirmed the theoretical predictions over the temperature range 1.8–12.0 K in a magnetic field of up to 70 kOe and made it possible to correctly determine all parameters of the localized states involved in the model. The experimental data obtained for carbon nanomaterials synthesized from single-wall carbon nanotubes and a mixture of C_2N fullerenes indicate the possible renormalization of the magnetic moment of electrons involved in hopping transport.     

High-resolution transmission electron microscopy on silicon carbide whiskers

SiC whiskers were grown from the reaction of silicon monoxide (SiO) with activated carbon containing iron impurities. Growth proceeds through a VLS growth mechanism with SiO and CO as reacting gases. HRTEM combined with EDS shows that the SiC whisker is topped by a Fe₃Si catalyst droplet. The SiC whisker is found to be one-dimensionally disordered along the [111] growth direction of an fcc crystal structure. Although the catalyst droplet is usually larger than the top face of the whisker, we observed a number of situations where the diameter of the droplet was smaller. The study of the SiC-Fe₃Si interface showed that the growth is nucleated from the edges.     

Dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies

The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me₃Si)₂NH) (Me:CH₃) and SiH₄–C₂H₂, respectively, by a laser-induced gas-phase reaction. The complex permittivities of the nano Si/C/N composite powder and nano SiC powder were measured at a frequency range of 8.2–12.4 GHz. The real part (′) and imaginary part (″) of the complex permittivity, and dissipation factor (tg δ=″/′) of nano Si/C/N composite powder are much higher than those of nano SiC powder and bulk SiC, Si₃N₄, SiO₂, and Si, especially the tg δ. The promising features of nano Si/C/N composite powder would be due to more complicated Si, C, and N atomic chemical environment than in a mixture of pure SiC and Si₃N₄ phase. The charged defects and quasi-free electrons moved in response to the electric field, diffusion or polarization current resulted from the field propagation. Because there exists graphite in the nano Si/C/N composite powder, some charge carries are related to the sp³ dangling bonds (of silicon and carbon) and unsaturated sp² carbons. The high ″ and tg δ of nano Si/C/N composite powder were due to the dielectric relaxation. The nano Si/C/N composite powder would be a good candidate for electromagnetic interface shielding material.     

Microstructure of interfaces between a magnesium matrix and preoxidized silicon carbide particles

An amorphous SiO₂ layer, 100–150 nm thick, has been produced on the surface of -SiC particles by controlled oxidation in air. The as-treated particles were immersed for 1.5h at 1,000 K in a large excess of liquid magnesium, which resulted in the formation by pressureless infiltration of a composite region with a particle volume fraction about 50%. Conventional transmission electron microscopy (CTEM) and high-resolution TEM (HRTEM) were used to characterize and localize the different species present in the transition zone between the Mg matrix and the -SiC particles. The results are discussed in terms of the physico-chemical processes occurring during formation of the composite region or during cooling of the Mg ingot. A reaction mechanism based on local equilibria and liquid phase diffusion is proposed. Four steps are involved in this mechanism: (i) rapid conversion of SiO₂ into MgO and Si; (ii) formation of a true Mg/SiC interface; (iii) partial decomposition of SiC into carbon and silicon; and (iiii) precipitation of -SiC and Mg₂Si on cooling.     

Thermal conductivity of high-porosity cellular-pore biocarbon prepared from sapele wood

This paper reports on measurements (in the temperature range T = 5–300 K) of the thermal conductivity κ(T) and electrical conductivity σ(T) of the high-porosity (～63 vol %) amorphous biocarbon preform with cellular pores, prepared by pyrolysis of sapele wood at the carbonization temperature 1000°C. The preform at 300 K was characterized using X-ray diffraction analysis. Nanocrystallites 11–30 Å in ize were shown to participate in the formation of the carbon network of sapele wood preforms. The dependences κ(T) and σ(T) were measured for the samples cut across and along empty cellular pore channels, which are aligned with the tree growth direction. Thermal conductivity measurements performed on the biocarbon sapele wood preform revealed a temperature dependence of the phonon thermal conductivity that is not typical of amorphous (and X-ray amorphous) materials. The electrical conductivity σ was found to increase with the temperature increasing from 5 to 300 K. The results obtained were analyzed.     

Method of calculating the phase composition of SiC–Si–C materials obtained by silicon infiltration of carbon matrices

The synthesis of SiC–Si–C materials by siliconizing porous carbon matrices has been considered, and a method of determining their phase composition has been devised. Preforms of two types have been siliconized, i.e., biomorphic carbon matrices prepared by wood pyrolysis and artificial porous graphites prepared by mixing and compacting carbon powders with an organic binder. The calculated phase compositions are in good agreement with microstructure metallographic examination data.     

强磁场中n型锗的横向磁阻

本文就声子散射与电离杂质散射的两种散射机构探讨了半导体n型锗的横向磁阻。在简并强磁场情况下,得出声子散射机构在〈111〉,〈110〉和〈100〉三个方向上锗的横向磁阻的表示式。磁阻的平均值的相对大小(ρ_t<111>)/ρ₀:(ρ_t<110>)/ρ₀:(ρ_t<100>)/ρ₀=1:1.7:1.1,并且磁阻具有振荡形式。在非简并量子极限情况下分别对声子散射和杂质散射得出锗的横向磁