Tl-based superconducting films prepared by aerosol spray deposition and thallinated in an open system

Superconducting Tl-based films were prepared on a LaAlO₃ single crystal substrate. Spray pyrolysis of Ba, Ca and Cu nitrate solutions was used for deposition of the precursor films. They were subsequently ex-situ thallinated in flowing oxygen (open system). While the superconducting Tl-2212 phase formed at an annealing temperature of 880°C, thallination at 900°C led to the formation of a Tl-2223 /Tl-2212 mixture. The amount of Tl-2223 increased with prolonged thallination, whereas the Tl-2212 phase progressively disappeared. Films prepared in such a manner were c-oriented and contained only low amounts of non-superconducting impurities. The resulting samples were characterized by XRD and SEM and their T _C values were determined by resistive four-point measurements. They showed critical temperatures in the range of T _ON = 125–135 K, T _C0 = 91–93 K. Differences between the composition and properties of the obtained films and those thallinated in closed systems under 50 kPa of oxygen are discussed in this paper. Results show that the Tl-2212 → Tl-2223 transformation proceeds at a slower rate under flowing oxygen than in a closed system. Presented at 5-th International Conference Solid State Surfaces and Interfaces, November 19–24, 2006, Smolenice Castle, Slovakia.     

密封容器中后处理制备Tl2Ba2CaCu2Oy高温超导薄膜及其性能研究

以铝酸镧（001）单晶为基片，采用两步法制备Tl2Ba2CaCu2Oy（Tl 2212）高 温超导薄膜.首先，利用脉冲激光沉积（PLD）工艺沉积Ba2CaCu2Ox非晶前驱体薄膜；然后，前驱体薄膜在高温（720—850℃）下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的，其相组成为Tl 2212，摇摆曲线（0012）的半高宽为0.72° ，SEM图像显示其表面光滑平整，其零电阻温度为106.2K. 关键词： Tl 2212超导薄膜 脉冲激光沉积     

蓝宝石基片上制备大面积Tl2Ba2CaCu2O8超导薄膜

在2英寸双面蓝宝石基片上采用CeO₂作为缓冲层制备了高质量Tl₂Ba₂CaCu₂O₈(Tl-2212)超导薄膜.以金属铈作为溅射靶材,采用射频磁控反应溅射法生长了c轴织构的CeO₂缓冲薄膜,并研究了不同生长条件对于CeO₂缓冲层的晶体结构及表面形貌的影响.超导薄膜采用直流磁控溅射和后热处理的方法制备.扫描电子显微镜(SEM)图像显示,超     

多层高温超导薄膜研究

文中以LaAlO3为衬底,制作了一层Tl-2212高温超导薄膜,并在薄膜上生长一层较薄的CeO2缓冲层,然后再在上面生长一层Tl-2212高温超导薄膜。经过测量,研究了多层膜结构对超导薄膜临界电流密度的影响。结果显示,在缓冲层的结晶过程中超导薄膜的晶格受到影响,结晶过程中的处理很容易诱导上面一层Tl-2212超导薄膜产生杂相,导致临界电流密度降低。     

高温退火对蓝宝石基片的表面形貌和对CeO2缓冲层以及Tl-2212超导薄膜生长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO₂缓冲层和Tl-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长,表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石 关键词： Tl-2212超导薄膜 蓝宝石 缓冲层     

采用快速升温烧结方法生长Tl-1223超导薄膜的研究

报道了在铝酸镧(00l)衬底上生长Tl-1223超导薄膜的快速升温烧结方法以及铊(Tl)源陪烧靶的配比对Tl-1223薄膜晶体结构的影响.扫描电子显微镜观测表明,采用快速升温烧结方法生长的Tl-1223超导薄膜具有致密的晶体结构.X-射线衍射等测试表明,采用合适配比的陪烧靶在氩气环境下可以制备出纯c轴取向的Tl-1223超导薄膜,充氧退火后的薄膜具有较好的电学性能,其临界转变温度T_(c onset)达到116K,临界电流密度达到1.5MA/cm~2(77 K,0 T).实验结果表明,采用这一新的烧结方法制备Tl系超导薄膜具有升降温时间和恒温时间短、生产成本低等特点.     

蓝宝石基片上制备双面Tl_2Ba_2CaCu_2O_8超导薄膜

在蓝宝石基片上,以CeO2为缓冲层制备了高质量的双面Tl2Ba2CaCu2O8(Tl-2212)超导薄膜。以金属铈靶作为溅射源生长了c轴取向的CeO2缓冲薄膜,并对CeO2薄膜进行了高温处理,有效改善了其结晶质量和表面形貌。采用两步法制备了双面的Tl-2212超导薄膜。XRD测试显示,薄膜为纯的Tl-2212相,且其晶格c轴垂直于衬底表面。超导薄膜的Tc为106K,Jc(77K,0T)为3.5MA/cm2,微波表面电阻Rs(77K,10GHz)为390μΩ。     

倾斜生长Tl_2Ba_2CaCu_2O_8超导薄膜的I-V曲线及快速反应特性

在10mm长、3mm宽的斜切LaA lO3衬底上制备出不同厚度的Tl2Ba2CaCu2O8(Tl-2212)超导薄膜。对薄膜的I-V特性进行测量,其临界电流密度小于正常生长的Tl-2212超导薄膜。对薄膜通过脉冲方波进行快速反应特性的测量,结果表明:倾斜生长的Tl-2212超导薄膜在一个电压脉冲的作用下,产生宽度仅为μs量级的大电流脉冲,然后变为正常态。这和正常生长的超导薄膜不同,前者没有经过发热和升温的过程。利用这一特性可以制作高速高温超导开关和快速反应限流器等。     

Formation of epitaxial Tl_2Ba_2Ca_2Cu_3O_(10) superconducting films by dc-magnetron sputtering and triple post-annealing method

For obtaining pure phase T12Ba2Ca2Cu3O10 （T1-2223） films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, T12Ba2CaCu2O8 （T1-2212） is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared T1-2212 inter-phase is converted into T1-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of T1-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction （XRD） θ-2θ scans, 09 scans and rotational φ scans show that each of the T1-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy （SEM）. The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.     

Observation of lateral long range order in superconducting FeTe thin films

<正>We find that the superconductivity in the thin films of the formerly believed non-superconducting parent compound FeTe is accompanied by an emergence of second order with a correlation length of 742 nm and 258 nm at 10 K and 300 K,respectively.The structural phase transition found in iron pnictide superconductors,in non-superconducting FeTe bulk samples,and in FeSe superconducting thin films is not observed in the superconducting FeTe thin films.The interplay between superconductivity and long range order may suggest the crucial role of competition between electronic localization and itinerancy which leads to strong quantum fluctuations in the FeTe system.     

Matching effect in superconducting NbN thin film with a square lattice of holes

A square hole array is fabricated over a micro-bridge of NbN thin film by electron beam lithography and reactive ion milling. Magneto-resistance is measured across the micro-bridge filled with a hole array near the superconducting transition temperature. It is found that magneto-resistance minima occur when the number of vortices is an integer multiple or a fractional multiple of the number of holes. The temperature and the current dependences of the matching effect are studied.     

直流磁控溅射一步法原位制备MgB2超导薄膜

用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词： 高温超导体 超导薄膜 磁控溅射 二硼化镁     

Role of the mercury pressure during reaction synthesis of Hg(Re)-based superconducting films

Thin films of mercury based superconductors were prepared on the R-plane sapphire with a CeO₂ buffer layer using a two step process involving the deposition of the Hg-free precursor and ex situ mercuration in the sealed quartz tube. For the thin film preparation, a method with no contact between the mercury source and the precursor film was used for mercuration. We studied the influence of the basic parameters of the mercuration (annealing time, temperature and partial pressure of the mercury) regarding the composition and superconducting properties of prepared Hg-based films to determine appropriate conditions for this mercuration method. We found out that an increased partial pressure of mercury inhibited the creation of the parasitic Re-based phase and supported the crystallization of the superconducting phase. The advantage of this mercuration method is higher reproducibility as well as its capability to prepare high quality thin large areas films. Presented at 5-th International Conference Solid State Surfaces and Interfaces, November 19–24, 2006, Smolenice Castle, Slovakia     

超导薄膜磁场穿透深度的双线圈互感测量

磁场穿透深度是联系超导体宏观电动力学与微观机制的重要物理量,其精确测量对于研究超导机理以及探索超导应用具有重要意义.在众多的磁场穿透深度测量方法中,双线圈互感法具有测量精度高、技术相对成熟、对样品没有破坏等优点,可被用于细致地研究超导薄膜的磁场穿透深度对温度、掺杂、外延应力等参量的依赖关系.本文首先简要介绍了双线圈互感法的基本原理,指出该方法的测量精度主要受系统几何参数及薄膜边缘漏磁的影响;之后对自主设计搭建的透射型双线圈互感装置进行了系统的校验,并详细说明了其测量精度:对于厚度为100 nm,穿透深度为150 nm的典型薄膜样品,穿透深度绝对值的测量误差小于10%;最后通过测量NbN超导薄膜的磁场穿透深度进一步检验了装置的精度,分析表明穿透深度的测量值与文献报道结果符合.     

Influence of disorder on the local density of states in high- T(c) superconducting thin films

Using a low temperature scanning tunneling microscope in the spectroscopic mode, we find that the disorder in a Bi(2)Sr(2)CaCu(2)O(8+delta) thin film modifies dramatically the quasiparticle local density of states. Small, but well-defined superconducting regions, coexisting with dominating semiconducting areas, show well-pronounced gap structures, similar to those observed previously in high-quality single crystals. Surprisingly, between these two regions, the detailed shape of the quasiparticle spectrum is virtually identical to the pseudogap previously observed at temperatures T>T(c), or in the vortex core, at 4.2 K. Thus, the role of the disorder in destroying the superconducting phase is comparable to that of the magnetic field or thermal fluctuations.     

退火时间对MgB_2超导薄膜的影响

在多晶A l2O3衬底上,以B2H6作为硼源,化学气相沉积先驱B薄膜,采用Mg扩散方法,在不同退火时间条件下制备了MgB2超导薄膜。通过电阻-温度曲线测量、X射线衍射分析和扫描电子显微镜形貌观测方法,研究了退火时间对MgB2薄膜的超导特性、晶体结构、表面形貌的影响。     

在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

报道了在蓝宝石衬底上制备CeO₂缓冲层的原位双温工艺法及其对Tl₂Ｂa₂CaCu₂Ｏ₈（Tl-2212）薄膜超导特性的影响．XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点．在先驱膜的高温后退火过程中,40 nm厚的CeO₂薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散．随后制备厚度为530 nm的Tl-2212 关键词： Tl-2212超导薄膜 蓝宝石 氧化铈缓冲层 原位双温工艺法     

C-axis Josephson plasma resonance observed in Tl(2)Ba(2)CaCu(2)O(8) superconducting thin films by use of terahertz time-domain spectroscopy

We have unambiguously observed the c -axis Josephson plasma resonance (JPR) in high-critical-temperature (T(c)) cuprate (Tl(2)Ba(2)CaCu(2)O(8)) superconducting thin films, employing terahertz time-domain spectroscopy in transmission as a function of temperature in zero magnetic field. These are believed to be the first measurements of the JPR temperature dependence of a high-T(c) material in transmission. With increasing temperature, the JPR shifts from 705 GHz at 10 K to ~170 GHz at 98 K, corresponding to an increase in c-axis penetration depth from 22.4+/-0.6mum to 94+/-9mum . The linewidth of the JPR peak increases with temperature, which indicates an increase in the quasi-particle scattering rate. We have probed the onset of the c -axis phase coherence to ~0.95T(c) . The JPR vanishes above T(c) as expected.     

Single crystals and thin film growth in Bi(Pb)-SrCaCuO system by the flux method

We present ab initio calculations for Si ad-atom kinetics on surfactant (As, Sb) covered Si(111) considering the structures experimentally found during homoepitaxy. On As-covered Si(111), one exclusively finds islands with double-step height which always show the equilibrium (1 2 1)-structure. On the other hand, on Sb-covered Si(111) large Si islands with single-step height appear with (1 2 1)-structure, on which smaller islands nucleate which show the ( $ \sqrt{3} \times \sqrt{3} $ )-structure of the Sb-covered terraces. The competition between diffusion of ad-atoms on top of the surfactant layer and incorporation into the layer by exchange with a surfactant atom, and the consequences for the island development on the different structures are discussed.