Z型InN/SnS2范德华异质结增强光催化水分解

寻找高效的光催化剂分解水制氢是解决能源危机和环境问题的有效途径之一.基于第一性原理,对InN/SnS₂异质结的几何结构、电子结构和光催化水分解性能进行研究.结果表明InN/SnS₂异质结是具有的Ⅱ型能带排列半导体材料可以有效地分离电子空穴对.在光激发下,较小的带隙以及合适的内建电场使得光生载流子迁移路径成“Z”字型,这保留了InN/SnS₂异质结强氧化还原能力.光生电子在InN的导带底累积并发生析氢反应,而积累在SnS₂上的光生空穴使析氧反应自发发生.它们的带边位置都跨越了水的氧化还原电位,证明能够实现水的完全分解.因此,InN/SnS₂异质结有希望成为高效光解水催化剂.     

二维GaTe/Bi2Se3异质结：一类有潜力的Z型光解水催化剂

本文基于第一性原理方法,计算了二维GaTe/Bi₂Se₃异质结的电子结构、界面电荷转移、静电势分布、吸收光谱及光催化性质. 计算结果表明异质结是一个小能隙的准直接半导体,能有效捕获太阳光. 由于相对较强的界面內建极化电场和带边轻微弯曲,导致异质结中的光生电子和空穴分别有效分离在GaTe单层和Bi₂Se₃薄片上,可用于析氢和产氧. 这些理论计算结果意味着二维GaTe/Bi₂Se₃异质结是一类有潜力的Z型太阳能全解水催化剂.     

Tuning band alignment and optical properties of 2D van der Waals heterostructure via ferroelectric polarization switching

Favourable band alignment and excellent visible light response are vital for photochemical water splitting. In this work, we have theoretically investigated how ferroelectric polarization and its reversibility in direction can be utilized to modulate the band alignment and optical absorption properties. For this objective, 2D van der Waals heterostructures (HTSs) are constructed by interfacing monolayer MoS₂ with ferroelectric In2Se3. We find the switch of polarization direction has dramatically changed the band alignment, thus facilitating different type of reactions. In In₂Se₃/MoS₂/In₂Se₃ heterostructures, one polarization direction supports hydrogen evolution reaction and another polarization direction can favour oxygen evolution reaction. These can be used to create tuneable photocatalyst materials where water reduction reactions can be selectively controlled by polarization switching. The modulation of band alignment is attributed to the shift of reaction potential caused by spontaneous polarization. Additionally, the formed type-II van der Waals HTSs also significantly improve charge separation and enhance the optical absorption in the visible and infrared regions. Our results pave a way in the design of van der Waals HTSs for water splitting using ferroelectric materials.     

Structures,mobilities, electronic and optical properties of two-dimensional α-phase group-VI binary compounds: α-Se2Te and α-SeTe2

Based on the first-principles calculations, we confirm the geometry and electronic structures of two binary group-VI compounds: monolayer α-Se₂Te and α-SeTe₂. The stabilities are confirmed by the cohesive energies, phonon dispersions, and elastic constants. The mechanical properties, strain-stress relationships, and strain-dependent variations of band gaps and band structures are investigated detailed. Furthermore, the high carrier mobilities (up to $5.4\times {10}^3$ cm² V⁻¹ s⁻¹) and optical absorption coefficients (several 10⁵ cm⁻¹) are also exhibited, demonstrating the great application potentials in optoelectronics.     

Symmetrical metallic and magnetic edge states of nanoribbon from semiconductive monolayer PtS2

Transition metal dichalcogenides (TMD) MoS₂ or graphene could be designed to metallic nanoribbons, which always have only one edge show metallic properties due to symmetric protection. In present work, a nanoribbon with two parallel metallic and magnetic edges was designed from a noble TMD PtS₂ by employing first-principles calculations based on density functional theory (DFT). Edge energy, bonding charge density, band structure, density of states (DOS) and simulated scanning tunneling microscopy (STM) of four possible edge states of monolayer semiconductive PtS₂ were systematically studied. Detailed calculations show that only Pt-terminated edge state among four edge states was relatively stable, metallic and magnetic. Those metallic and magnetic properties mainly contributed from 5d orbits of Pt atoms located at edges. What's more, two of those central symmetric edges coexist in one zigzag nanoribbon, which providing two atomic metallic wires thus may have promising application for the realization of quantum effects, such as Aharanov–Bohm effect and atomic power transmission lines in single nanoribbon.     

Tunable electronic and optical properties of GaS/GaSe van der Waals heterostructure

We have used first-principles calculations to investigate the electronic and optical properties of GaS/GaSe van der Waals heterostructures formed by stacking two-dimensional GaSe and GaSe monolayers. Our findings confirm that the GaS/GaSe heterostructures transform from an indirect to a direct band gap material for the two stackings considered in this study. In addition, we found that the direct band gaps are 1.780 eV and 1.736 eV for AA and AB stacking, respectively. It is observed that the behavior of the optical properties of AA stacking is similar to AB stacking with some differences in details and both heterostructures located in UV range. The refractive index values are 2.21 (AA pattern) and 2.18 (AB pattern) at zero photon energy limit and increase to 2.937 for AA and 2.18 AB patterns and both located in the visible region. More importantly, the GaS/GaSe heterostructures have a variety of extraordinary electronic and optical properties. Accordingly, these heterostructures can be useful for the solar cell, nanoelectronics, and optoelectronic applications.     

Theoretical study of enhanced ferromagnetism and tunable magnetic anisotropy of monolayer CrI3 by surface adsorption

Magnetic anisotropy energy (MAE) plays a key role for 2D magnetic materials, which have attracted significant attention for their promising applications in spintronic devices. Based on first-principles calculations, we have investigated the influence of surface adsorption on the ferromagnetism and MAE of monolayer CrI₃. We find that Li adsorption can dramatically enhance its ferromagnetism, and tune its easy magnetization axis to the in-plane direction from original out-of-plane at certain coverage of Li. The monotonic enhancement of in-plane magnetism in CrI₃ as the coverage of Li increases are attributed to electrostatic doping induced by charge transfer between Li atoms and I atoms, as supported by the charge doping simulation. The tunable robust magnetic anisotropy may open new promising applications of CrI₃–based materials in spintronic devices.     

Hydrothermal synthesis of well-dispersed ultrafine N-doped TiO2 nanoparticles with enhanced photocatalytic activity under visible light

Ultrafine nitrogen-doped TiO₂ nanoparticles with narrow particle size distribution, good dispersion, and high surface area were synthesized in the presence of urea and PEG-4000 via a hydrothermal procedure. TEM observation, N₂ adsorption, XRD, UV-vis spectroscopy, the Raman spectroscopy and XPS analysis were conducted to characterize the synthesized TiO₂ particles. The synthesized TiO₂ particles were a mixture of 49.5% anatase and 50.5% rutile with a size of around 5 nm. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive Brilliant Blue KN-R under both UV and visible light. The synthesized TiO₂ particles showed much higher photocatalytic activity than a commercial P25 TiO₂ powder under both UV and visible light irradiations. The high performance is associated to N doping, the reduced particle size, good dispersion, high surface area, and a quantum size effect.     

Interface contact and modulated electronic properties by external vertical strains and electric fields in graphene/MoS2 heterostructure

Based to the first-principles calculations, we study the electronic properties of graphene/MoS₂ heterostructure by modulating the vertical strains and applying external electric field. Graphene/MoS₂ heterostructure is a van der Waals heterostructure (vdWH) with the interlayer spacing is 3.2 Å for the equilibrium state, and the contact property of the interface is n-type Schottky contact. The Schottky barrier height (SBH) changes with vertical strains which induces a change of charge transfer between graphene and MoS₂ layer. In addition, with strain or without strain, the applied positive electric field can effectively promote the charge transfer from graphene to MoS₂, while the negative electric field has the opposite effect. These findings support for the design of field effect transistors based on graphene vdWHs.     

Tunable electronic and optical properties of SnC/BAs heterostructure by external electric field and vertical strain

Based on the first-principles method, we investigate the electronic structure of SnC/BAs van der Waals (vdW) heterostructure and find that it has an intrinsic type-II band alignment with a direct band gap of 0.22 eV, which favors the separation of photogenerated electron–hole pairs. The band gap can be effectively modulated by applying vertical strain and external electric field, displaying a large alteration of band gap via the strain and experiencing an indirect-to-direct band gap transition. Moreover, the band gap of the heterostructure varies almost linearly with external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and the optical absorption reveal that the SnC/BAs heterostructure could present an excellent light-harvesting performance. Our designed heterostructure is expected to have great potential applications in nanoelectronic devices and photovoltaics and optical properties.     

First-principles study on the electronic and magnetic properties of InN nanosheets doped with 2p elements

The electronic structure of InN nanosheets doped by light elements (Be, B, C, and O) is studied based on spin-polarized density functional theory within the generalized gradient approximation. The results show that the Be and C dopants in InN nanosheets induce spin polarized states in the band gap, or near the valence band, which generates local magnetic moments of 1.0 µ_B with one dopant atom. Due to the exchange spin-splitting, the three 2p electrons of Be atom are all in p_x and p_y orbitals (↑↑↓). So Be will coordinate with host atoms by σ coordination bond. The long-range ferromagnetic order above room temperature is attributed to p–p coupling. For C atom, the configuration of the five 2p electrons is (↑↑↑↓↓), and the unpaired electron is in p_z(↑) orbital. So the π bond will be formed between C atom and other atoms. Due the weak π bond cannot support long-range coupling, no stable magnetism is sustained if two C dopants are separated by longer than 3.58 Å.     

Strain and electric-field induced tunable electronic properties of blue phosphorus-GeS/SnS/SnSe (orthorhombic) vdW heterostructures

In this work, we composite blue phosphorous (blueP) and monolayer GeS/SnS/SnSe through van der Waals (vdW) force interaction. It is found that blueP-GeS/SnS heterostructures are stable and form type-II band alignments, which can effectively promote the separation of photoinduced carriers. We perform a systematic theoretical study of interlayer coupling effects and band realignment of blueP-GeS/SnS/SnSe heterostructures after the strain and electric-field are imposed. BlueP and GeS/SnS/SnSe are twisted with different angles, and the theoretical framework of bands alignment and carriers' separation are established. The results show that the electronic properties of independent blueP and GeS/SnS/SnSe can be roughly maintained. When strain is applied, the band alignment shows significant adjustability by changing the external strain. Besides, the blueP-SnSe heterostructure show type-II characteristic in the range from -0.25 V/Å to -0.1 V/Å. Our theoretical calculation proves that strain and electric field engineering are two useful methods to design novel electronic devices.     

g-C3N4 modified Bi2O3 composites with enhanced visible-light photocatalytic activity

Novel g-C₃N₄ modified Bi₂O₃ (g-C₃N₄/Bi₂O₃) composites were synthesized by a mixing-calcination method. The samples were characterized by thermogravimetry (TG), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscopy (TEM), UV–vis diffuse reflection spectroscopy (DRS), photoluminescence (PL) and photocurrent-time measurement (PT). The photocatalytic activity of the composites was evaluated by degradation of Rhodamine B (RHB) and 4-chlorophenol (4-CP) under visible light irradiation (>400 nm). The results indicated that the g-C₃N₄/Bi₂O₃ composites showed higher photocatalytic activity than that of Bi₂O₃ and g-C₃N₄. The enhanced photocatalytic activity of the g-C₃N₄/Bi₂O₃ composites could be attributed to the suitable band positions between g-C₃N₄ and Bi₂O₃. This leads to a low recombination between the photogenerated electron–hole pairs. The proposed mechanism for the enhanced visible-light photocatalytic activity of g-C₃N₄/Bi₂O₃ composites was proven by PL and PT analysis.     

Adsorption and diffusion behaviors of H2, H2S,NH3, CO and H2O gases molecules on MoO3 monolayer: A DFT study

Molybdenum trioxide (MoO₃) with α-phase is a promising material for gas sensing because of its high sensitivity, fast response and thermodynamic stability. To probe the mechanism of superior gas detection ability of MoO₃ monolayer, the adsorption and diffusion of H₂, H₂S, NH₃, CO and H₂O molecules on two-dimensional (2D) MoO₃ layer are studied via density functional theory (DFT) calculations. Based on calculated adsorption energies, density of states, charge transfer, diffusion barriers and diffusion coefficient, MoO₃ shows a superior sensitive and fast response to H₂ and H₂S than CO, NH₃, H₂O, which is consistent with experimental conclusions. Moreover, the response of MoO₃ to H₂S and H₂ will be obviously enhanced at high gas concentration, and the incorporation of H₂ and H₂S results in an obvious increasing in DOS near Fermi level. Our analysis provides a conceptual foundation for future design of MoO₃-based gas sensing materials.     

First-principles calculations of the dielectric and vibrational properties of ferroelectric and paraelectric BaAl2O4

First-principles calculations have been conducted to study the structural, dielectric, and vibrational properties of ferroelectric and paraelectric BaAl₂O₄. High-frequency and static dielectric constants, and phonon frequencies at the Brillouin zone center are reported. Both BaAl₂O₄ polymorphs are promising infrared-transparent materials due to their low electronic dielectric constants. The ferroelectric and paraelectric BaAl₂O₄ have much smaller permittivity compared to the classical ferroelectric materials. From an atomic nanostructure standpoint, the abnormally low permittivity of BaAl₂O₄ polymorphs is mainly related to low coordination numbers of Ba (9) and Al (4).     

具有可调电学和光学性质的双层和三层Janus Ga2SSe

将二维(2D)层状材料的单层堆叠成双层或者少数层,可以很好的调节其光电性质,为该领域发展提供了新的机遇.本文采用第一性原理方法系统地研究了堆叠层数和堆叠次序对双层和三层Janus Ga₂SSe的电学和光学性质的影响.我们发现这些结构的层间距差别很大,而结合能差异却很小.尽管所有的双层和三层Janus Ga₂SSe具有间接带隙,然而其带隙值和载流子有效质量与堆叠层数和堆叠次序密切相关.此外,在Janus Ga₂SSe中,通过增加层数,可以增强其在可见光和紫外区域的吸收系数.同时,通过控制层间堆叠模式,进一步调制其吸收系数,导致在可见光和近紫外区域产生多个吸收峰.我们的结果为双层和三层Janus III族单硫化合物的可调节电学和光学性质提供了有价值的见解,这表明其可能在纳米电子和光电子器件中有着广阔的应用前景.     

Synthesis and luminescence properties of YVO4:Eu,Bi phosphor with enhanced photoluminescence by Bi doping

YVO₄:Eu³⁺,Bi³⁺ phosphors have been prepared by the high-temperature solid-state (HT) method and the Pechini-type sol-gel (SG) method. Spherical SiO₂ particles have been further coated with YVO₄:Eu³⁺,Bi³⁺ phosphor layers by the Pechini-type SG process, and it leads to the formation of core-shell structured SiO₂/YVO₄:Eu³⁺,Bi³⁺ phosphors. Therefore, the phase formations, structures, morphologies, and photoluminescence properties of the three types of as-prepared YVO₄:Eu³⁺,Bi³⁺ phosphors were studied in detail. The average diameters for the phosphor particles are 2-4 μm for HT method, 0.1-0.4 μm for SG method, and 0.5 μm for core-shell structured SiO₂/YVO₄:Eu³⁺,Bi³⁺ particles, respectively. Photoluminescence spectra show that effective energy transfer takes place between Bi³⁺ and Eu³⁺ ions in each type of as-prepared YVO₄:Eu³⁺,Bi³⁺ phosphors. Introduction of Bi³⁺ into YVO₄:Eu³⁺ leads to the shift of excitation band to the long-wavelength region, thus the emission intensities of ⁵D₀-⁷F₂ electric dipole transition of Eu³⁺ at 615 nm upon 365 nm excitation increases sharply, which makes this phosphor a suitable red-emitting materials that can be pumped with near-UV light emitting diodes (LEDs).     

Investigation of the optoelectronic properties of columbite ZnNb2O6 crystal

A high-quality ZnNb₂O₆ single-crystal grown by optical floating zone method has been used as a research prototype to analyze the optoelectronic parameters by measuring the absorption coefficient and transmittance spectra along the b-axis from 200 nm to 1000 nm at room temperature. The optical interband transitions of ZnNb₂O₆ have been determined as a direct transition with a band gap of 3.84 eV. The refractive index, extinction coefficient, and real and imaginary parts of the complex dielectric constants as functions of the wavelength for ZnNb₂O₆ crystal are obtained from the measured absorption coefficients and transmittance spectra. In the Urbach tail of 3.16–3.60 eV, the validity of the Cauchy–Sellmeier equation has also been evaluated. Using the single effective oscillator model, the oscillator energy E_o is found to be 4.77 eV. The dispersion energy E_d is 26.88 eV and ZnNb₂O₆ crystal takes an ionic value.     

Strain-tunable electronic and optical properties of h-BN/BC_3 heterostructure with enhanced electron mobility

By using first-principles calculation, we study the properties of h-BN/BC_3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC_3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC_3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast,applying an external strain can mildly modulate the electronic band structure of h-BN/BC_3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC_3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties.     

Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays

The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.