金属杂质辅助低能氩离子束诱导蓝宝石自组织纳米结构

使用实验室自主研发的等离子抛光与刻蚀系统,研究了不同入射能量下不锈钢杂质辅助Ar+离子束刻蚀蓝宝石表面自组织纳米结构的形成机制.采用Taylor Surf CCI2000非接触式表面测量仪和原子力显微镜分别对刻蚀后蓝宝石样品的粗糙度、纳米结构的纵向高度和表面形貌进行了分析.研究表明:引入不锈钢杂质后,当离子束入射角度为...     

离子源工艺参数对BCB胶刻蚀速率和表面粗糙度的影响

为了研究离子束刻蚀抛光过程中离子源工艺参数对刻蚀速率及表面粗糙度的影响,采用微波离子源为刻蚀离子源,以BCB胶为主要研究对象,研究了离子束能量、离子束电流、氩气流量、氧气流量对BCB胶刻蚀速率及表面粗糙度的影响,获得了离子源工艺参数与刻蚀速率及表面粗糙度演变的关系。研究结果表明,离子束能量在从400 eV增大到800 eV的过程中,刻蚀速率不断增大,从3.2 nm/min增大到16.6 nm/min;离子束流密度在从15 mA增大到35 mA的过程中,刻蚀速率不断增大,从1.1 nm/min增大到2.2 nm/min;工作气体中氧气流量从2 mL/min增大到10 mL/min的过程中,刻蚀速率会整体增大,在8 mL/min处略有下降。表面粗糙度变化不大,可以控制在1.8 nm以下。     

The effect of bombardment with neutralized neon ions on the roughness of a fused silica and beryllium surface

The effect of Ne ion beam etching on the roughness of materials for optical substrates—fused silica and beryllium—is studied. It is shown that the treatment of a fused silica surface by neutralized Ne ions with an energy of 400–800 eV makes it possible to smooth roughnessed in the range of higher spatial frequencies of 3–63 μm^–1 at an incidence angle of 0°–30°. For beryllium, the possibility of smoothing the surface roughness at an ion energy of 400 eV is found.     

Ion beam smoothing of indium-containing III-V compound semiconductors

2 has been used for smoothing of rough InAs, InP, and InSb surfaces, prepared by argon ion beam etching (IBE). The evolution of the surface roughness and morphology has been studied by atomic force microscopy (AFM) as a function of the N₂ RIBE process parameters (ion beam energy, ion beam angle of incidence, and ion dose). A drastic improvement of the surface roughness has been observed for ion beam angles near normal incidence and larger than 70° with increasing ion doses. By using this technique, the initial root-mean-square (rms) roughness of, e.g., InSb of about 40 nm could be decreased to about 1 nm. Received: 20 March 1998/Accepted: 24 March 1998     

不同离子束参数刻蚀蓝宝石纳米微结构及其光学性能

使用微波回旋共振离子源,研究Ar+离子束在不同角度、不同入射能量下对蓝宝石表面的刻蚀效果及光学性能。结果表明:所用能量800 eV,1 000 eV及1 200 eV时透过率都有很大的提升,由原来的50％提高到70％~80％,在能量为1 000 eV时增幅最大,能量为1 200 eV时增幅最小;在相同能量、不同角度下刻蚀后蓝宝石粗糙度呈先增大后减小的趋势,而在相同角度、不同能量下粗糙度方面无明显规律。刻蚀后表面形貌测试表明:角度不变,能量为1 000 eV时出现点状纳米结构,能量为1 200 eV时出现柱状纳米结构;能量不变,角度为10、50及80时出现了规律较明显的点状或条状纳米结构,角度为30时表面较为光滑。     

Ion-beam modification of track membrane surface

An ion-beam method to modify the track membrane surface is suggested. An ion gun based on a magnetron sputterer is developed. This gun provides ion energies in the range of 5 eV–1 keV, ion current density up to 0.8 mA/cm², and an ion beam aperture of 90 mm. After the track membrane surface has been irradiated by argon ions with an energy of 50–100 eV, the angle of surface-water contact decreases from 65°–75° to 10°–25°. If the irradiating ion energy is 300–800 eV, the angle of contact increases from 65°–75° to 90°–100°.     

Evolution of the roughness of amorphous quartz surfaces and Cr/Sc multilayer structures upon exposure to ion-beam etching

The effect of ion-beam etching on surfaces of Cr/Sc multilayer structures and amorphous quartz roughness is studied. The dependence of roughness on the depth of etching, incidence angle, and ion energy is considered. Optimal parameters of etching which provide minimal evolution of surface roughness are presented.     

二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺,利用泰勒霍普森相关相干表面轮廓粗糙度仪,研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加,二氧化锆薄膜表面粗糙度呈现出先缓慢增加,当基底的粗糙度大于10nm后呈现快速增加的趋势;随着二氧化锆薄膜厚度的增加,其表面均方根粗糙度（RMS）先减小后增大;随着辅助沉积离子能量的增加,其表面粗糙度呈现出先减小后增加的趋势。     

纳米级面形精度光学平面镜加工

为实现纳米级面形精度光学平面镜的高效精密抛光,提出了一种由传统环带抛光技术和先进离子束抛光技术相结合的组合式加工方法。介绍了环带抛光技术和离子束抛光技术的原理,通过实验研究了离子束抛光的材料去除函数,并采用这种组合抛光方法对口径为150 mm的平面镜进行抛光,抛光后平面镜的面形误差和表面粗糙度分别达到1.217 nm RMS和0.506 nm RMS。实验结果表明,这种组合抛光技术适合纳米级面形精度光学平面镜的加工。     

气体团簇离子束两步能量修形法的平坦化效应

本文提出采用气体团簇离子束的两步能量修形法来改善4H-SiC(1000)晶片表面形貌.先用15 keV的高能Ar团簇离子进行整体修形,再用5 keV的低能团簇离子优化表面.结果表明,在相同的团簇离子剂量下,与单一15 keV的高能团簇处理相比,两步法修形后的表面具有更低的均方根粗糙度,两者分别为1.05 nm和0.78 nm.本文还以原子级平坦表面为研究对象,揭示了载能团簇引起的半球形离子损伤(弧坑)与团簇能量的关系,及两步能量修形法在弧坑修复中的优势.在原子力显微镜表征的基础上,引入了二维功率谱密度函数,以直观全面地给出材料的表面形貌特征及其随波长(频率)的分布.结果表明,经任何能量的团簇离子轰击的表面,在0.05—0.20μm波长范围内,团簇轰击都能有效地降低粗糙度,而在0.02—0.05μm范围内,则出现了粗化效应,这是由于形成了半球形离子损伤,但第二步更低能量的团簇离子处理可以削弱这种粗化效应.     

离子束作用下的光学表面粗糙度演变研究

 为了获得超光滑光学表面,介绍了离子束作用下改善表面粗糙度的抛光方法,并通过相关的实验进行了验证。光学材料是典型的硬脆材料,在加工过程中的表面粗糙度要经历复杂的演变过程。离子束加工作为光学镜面加工中的最后一道工序,如果在修正面形的同时,能够有效地改善表面粗糙度,那么离子束加工的性能就可以得到更好的延伸。分析了离子束作用下的粗糙度演变机理,在此基础上提出了倾斜入射抛光和牺牲层抛光技术2种改善表面粗糙度的方法,并使用原子力显微镜进行了测量。实验结果表明：以45°倾斜入射抛光熔石英样件,其粗糙度由初始的0.67nm RMS减小到0.38nm RMS;涂上牺牲层的材料表面粗糙度由0.81nm RMS减小到0.28nm RMS,倾斜入射抛光和牺牲层抛光技术能够有效地改善表面粗糙度。     

Polydisperse spherical colloidal silica particles:Preparation and application

A new industrial method has been developed to produce polydisperse spherical colloidal silica particles with a very broad particle size,ranging from 20-95 nm.The process uses a reactor in which the original seed solution is heated to 100 ℃,and then active silicic acid and the seed solution are titrated to the reactor continuously with a constant rate.The original seeds and the titrated seeds in the reactor will go through different particle growth cycles to form different particle sizes.Both the particles' size distribution and morphology have been characterized by dynamic light scattering(DLS)and the focus ion beam(FIB) system.In addition,the as-prepared polydisperse colloidal silica particle in the application of sapphire wafer's chemical mechanical polishing(CMP) process has been tested.The material removal rate(MRR) of this kind of abrasive has been tested and verified to be much faster than traditional monodisperse silica particles.Finally,the mechanism of sapphire CMP process by this kind of polydisperse silica particles has been investigated to explore the reasons for the high polishing rate.     

应用碳化硅表面改性技术降低全息-离子束刻蚀光栅刻槽的粗糙度

采用具有良好比刚度和热稳定性的碳化硅材料作为基底,使用全息-离子束刻蚀技术制作了光栅。碳化硅材料表面固有缺陷导致制作的光栅刻槽表面粗糙度高,槽底和槽顶粗糙度分别达到了29.6 nm和65.3 nm (R_q)。通过等离子辅助沉积技术在碳化硅表面镀制一层均匀的硅改性层,经过抛光可以获得无缺陷的超光滑表面。XRD测试表明制备的硅改性层为无定形结构。原子力显微镜的测试结果表明:经过抛光后,表面粗糙度为0.64 nm(R_q)。在此表面上制作的光栅刻槽表面粗糙度明显降低,槽底和槽顶粗糙度分别为2.96 nm和7.21 nm,相当于改性前的1/10和1/9。     

利用功率谱密度评价离子束抛光光学元件表面粗糙度

利用功率谱密度(PSD)评价光学表面粗糙度具有传统评价手段(Ra)所不具备的优势。给出了功率谱密度的计算方法,以及抽样方向与一维PSD曲线的关系。在离子束抛光K9玻璃实验中引入PSD曲线,以评价抛光光学零件的光学表面粗糙度,结合PSD曲线与Ra值能够更全面的指导光学加工。     

Sputter damage in Si surface by low energy Ar+ ion bombardment

The damage distributions in Si(1 0 0) surface after 1.0 and 0.5 keV Ar⁺ ion bombardment were studied using MEIS and Molecular dynamic (MD) simulation. The primary Ar⁺ ion beam direction was varied from surface normal to glancing angle. The MEIS results show that the damage thickness in 1.0 keV Ar ion bombardment is reduced from about 7.7 nm at surface normal incidence to 1.3 nm at the incident angle of 80°. However, the damage thickness in 0.5 keV Ar ion bombardment is reduced from 5.1 nm at surface normal incidence to 0.5 nm at the incident angle of 80°. The maximum atomic concentration of implanted Ar atoms after 1 keV ion bombardment is about 10.5 at% at the depth of 2.5 nm at surface normal incidence and about 2.0 at% at the depth of 1.2 nm at the incident angle of 80°. However, after 0.5 keV ion bombardments, it is 8.0 at% at the depth of 2.0 nm for surface normal incidence and the in-depth Ar distribution cannot be observable at the incident angle of 80°. MD simulation reproduced the damage distribution quantitatively.     

大口径碳化硅反射镜面PVD改性工艺的研究

通过将多块不同尺寸的碳化硅平面试片以及一块口径为520mm碳化硅凹非球面反射镜作为镜面改性工艺技术的实验平台,对大口径碳化硅反射镜面PVD改性工艺技术进行探索、分析和研究。重点研究了前期PVD改性前镜面特性与PVD改性层的最佳匹配关系,主要是PVD改性层与镜面粗糙度和残留面形误差的要求和最佳结合点。采用的抛光方式为磨盘相对镜体做行星运动,采用相同的离子束辅助沉积法进行凹椭球面碳化硅反射镜的镜面改性。实验结果表明:通过选用合适的方案对改性后的PVD改性层镜面的面形误差进行修抛,可同时提高其镜面光洁度和粗糙度,最终测试结果为0.756　nm（Sq）,与改性前比较,粗糙度得到一定程度的提高。     

二氧化钛薄膜表面粗糙度研究

为了探究二氧化钛(TiO₂)薄膜表面粗糙度的影响因素, 利用离子束辅助沉积电子束热蒸发技术对不同基底粗糙度以及相同基底粗糙度的K9玻璃完成二氧化钛(TiO₂)光学薄膜的沉积。采用TalySurf CCI非接触式表面轮廓仪分别对镀制前基底表面粗糙度和镀制后薄膜表面粗糙度进行测量。实验表明, TiO₂薄膜表面粗糙度随着基底表面的增大而增大, 但始终小于基底表面粗糙度, 说明TiO₂薄膜具有平滑基地表面粗糙的作用; 随着沉积速率的增大, 薄膜表面粗糙度先降低后趋于平缓; 对于粗糙度为2 nm的基底, 离子束能量大小的改变影响不大, 薄膜表面粗糙度均在1.5 nm左右; 随着膜层厚度的增大, 薄膜表面粗糙度先下降后升高。     

Ultra-smooth polishing of high-precision optical surface

A new method of ultra-smooth uniform polishing was presented, which can avoid high-precision surface figure getting worse after ultra-smooth polishing. At first, the fundamental and process were introduced. Then the process was simulated with “Gauss” and “V” type removal function. It shows that there will be no significant influence on optical surface figure after ultra-smooth uniform polishing with any type removal function. To demonstrate the process, a high-precision Ø100 mm fused silica flat optical element was polished, which was prior figured by IBF. Its surface figure accuracy root-mean-square (rms) value is improved from initial 3.624 nm to final 3.393 nm, the mid-spatial frequency surface roughness rms value is improved from initial 0.477 nm to final 0.309 nm, and the high-spatial frequency surface roughness rms value is improved from initial 0.167 nm to final 0.0802 nm. At last, the surface quality of the lens was analyzed by power spectral density (PSD). The result indicates that the surface roughness of high-precision optical element could be improved by ultra-smooth uniform polishing method without the surface figure destroyed.     

Resistivity anisotropy of layered cobaltite Na x CoO2 thin films

AZO thin films with low surface roughness and low sheet resistance are required in the touch panels and display panels. In this work, we investigated the substrate cooling effect of the ion beam post-treatment on AZO films properties, and one new way to obtain low surface roughness and low sheet resistance at the same time was proposed. The more exciting find of this paper is that, compared to the samples without cooling during the process of the ion beam post-treatment, samples with proper cooling voltage show a sheet resistance decrease of 26 % (from 11.9 Ω/□ to 8.8 Ω/□) and a roughness decrease of 35.5 % (from 13.389 nm to 8.637 nm) without transparency losing. And the viewpoint that substrate cooling has the effect of weakening the crystallization, especially for the subface and internal parts of samples is deduced.     

ZnO的激光分子束外延法制备及X射线研究

利用激光分子束外延(L-MBE)技术在α-Al2O3(0001)衬底上生长出了沿C轴高度择优取向的ZnO外延薄膜,并采用Philips四晶高分辨X射线衍射仪(Philip′s X′Pert HR-MRD)对ZnO薄膜的表面及结构特性进行了研究.应用小角度X射线分析方法(GIXA)对ZnO薄膜的表面以及ZnO/Al2O3界面状况进行了定量表征.X射线反射率(XRR)曲线出现了清晰的源于良好表面及界面特性的Kiessig干涉振荡峰,通过对其精确拟合求得ZnO薄膜的表面及界面粗糙度分别为0.34 nm和1.12 nm.ZnO薄膜与α-Al2O3(0001)衬底的XRD在面(in-plane) Φ扫描结果表明形成了单一的平行畴(Aligned in-plane Oriented Domains),其在面外延关系为ZnO［1010］ ||Al2O3［1120］.XRD ω-2θ 扫描以及ω 摇摆曲线半峰宽分别为0.12度和1.27度,这一结果表明通过形成平行畴及晶格驰豫过程,ZnO薄膜中的应力得到了有效的释放,但同时也引入了螺位错.