2000 l/mm X射线镂空透射光栅的制备研究

在满足工艺要求的前提下,通过模拟光栅衍射,设计出镂空透射光栅模型,在此基础上将电子束和X射线光刻技术相结合,研究了制造2000 l/mm X射线镂空透射光栅的新工艺技术.首先利用电子束光刻和微电镀技术在镂空聚酰亚胺薄膜底衬上制备X射线母光栅掩模.然后利用X射线光刻和微电镀技术实现了光栅图形的复制,之后采用紫外光刻和微电镀技术制作加强筋结构,最后通过腐蚀体硅和等离子体刻蚀聚酰亚胺完成镂空透射光栅的制作.从此新的制造工艺结果上来看.制备的光栅栅线平滑,占空比合理,侧壁陡直,不同光栅之间一致性好,完全可以满足应用需求,充分表明了该制造技术是透射式X射线衍射光学元件制造的良好选择.     

3333lp/mm X射线透射光栅的研制

针对X射线透射光栅摄谱仪中的高线密度光栅,研究了采用电子束曝光和X射线曝光技术结合制作高线密度X射线透射光栅的工艺技术.首先利用电子束曝光和微电镀技术在镂空的薄膜上制备母光栅X射线掩模版,然后利用X射线曝光和微电镀技术小批量复制光栅.在国内首次完成了3333lp/mm X射线透射光栅的研制,栅线宽度为150nm,周期为300nm,金吸收体厚度为500nm.衍射效率标定的结果表明,该光栅的占空比合理、侧壁陡直,具有良好的色散特性,能够满足空间探测、同步辐射和变等离子诊断等多个领域的应用.     

软X射线相位型聚焦波带片的研制

软X射线波带片是软X射线光学中聚焦、色散和成像的重要元件。以激光全息-离子束刻蚀技术制作金的振幅型软X射线聚焦波带片,以此为掩模,利用接触式同步辐射光刻和离子束刻蚀技术在聚酰亚胺衬底上,分别制作出了镍和锗的软X射线相位型聚焦波带片。     

Equipment for soft X-Ray lithography on the VEPP-4M

An X-ray scanner for X-ray mask lithography is described. It is mounted onto the synchrotron radiation (SR) beamline of the VEPP-4M storage ring. The main advantage of this scanner is the possibility of varying the SR spectral range within wide limits and its fine tuning for solving specific technical tasks by changing the working energy of the VEPP-4M and using corresponding filters, which is illustrated by tables and plots of the calculated spectra. Calculated estimates of the lithographic resolution of lithographic complex, exposure times for various types of X-ray masks, and thicknesses of their masking layers providing the required level of X-ray mask contrast are given.     

Microfocus X-Ray Tubes with a Silicon Autoemission Nanocathode as an X-Ray Source

To develop nanostructures with extremely low spatial resolution (to 10 nm and below), a new concept of the use of arrays of microfocus X-ray tubes based on field emission silicon nanocathodes is proposed. A new λ-tunable microfocus source of X-ray radiation, based on a thinfilm transmission target with field emission nanocathode with tunable wavelength, is proposed. The possibility of decreasing the exposed area size to 20 nm and smaller by varying the tube blocking voltage is shown. The use of these X-ray sources opens a new way of developing maskless X-ray lithography.     

软X射线-真空紫外波段光谱光源研究

介绍长春光学精密机械与物理研究所进行的软X射线-真空紫外波段光谱光源研究工作。研制成功的壁稳氩弧光源光谱辐射稳定性和重复性达±0.3%,可作标准辐射源,用于真空紫外波段仪器光谱强度绝对辐射定标。研制成功的潘宁(Penning)光源、双等离子体光源和空心阴极光源,可以覆盖从十几个nm至几十nm波段范围,光谱辐射稳定性和重复性达±1.0%,提供不同工作气体在该波段的原子和离子线谱,用于光谱仪器的波长定标。所研制的激光等离子体光源,尤其是近期研制成功的无污染微液滴喷射靶激光等离子体光源,可以提供较高亮度的软X射线辐射,13.0 nm处激光-软X射线转换效率达0.75%／2π·sr／2%带宽,适合于光刻和该波段辐射计量研究。     

13.4nm软X射线干涉光刻透射光栅的优化设计

基于严格的矢量耦合波方法,结合纳米级光栅实际制作工艺,定量分析了在13.4 nm软X射线(TE偏振)正入射条件下,光栅材料、厚度、占空比、梯形浮雕底角大小等因素对光栅一级衍射效率的影响.结果表明,在此波段处,Si3N4、Cr、Au浮雕的相位作用对光栅衍射起重要影响,其中非金属材料Si3N4比金属材料Cr、Au的相位作用更明显.最后优化得到了用Si(或Si3N4)做衬底的si3N4、Cr、Au光栅,分析结果显示,其一级衍射效率优于目前用于13.4 nm软X射线干涉光刻的Cr、Si3N4复合光栅.     

环形静电排斥旋转驱动器微光机电系统微镜

微光机电系统（MOEMS）微镜在激光显示、光束扫描、自适应光学等领域都有重要应用。现有的MOEMS微镜驱动器一般为静电吸引型,难以克服其吸合效应造成的各种问题,同时,方形的驱动器难以与圆形的镜面形成良好匹配,填充比较低。提出了一种环形静电排斥驱动器的MOEMS微镜,该静电排斥驱动器以环形排列,并围绕在镜面的周围,达到了与圆形镜面的良好匹配。所设计的微镜口径为204 m,并利用PolyMUMPS表面工艺进行加工。模拟仿真及实验测试结果显示,该微镜具有0.62的最大旋转角,494 s的响应时间和1.191 kHz的工作带宽,适用于一般光束扫描等的应用需求。     

环形静电排斥旋转驱动器微光机电系统微镜北大核心CSCD

微光机电系统(MOEMS)微镜在激光显示、光束扫描、自适应光学等领域都有重要应用。现有的MOEMS微镜驱动器一般为静电吸引型,难以克服其吸合效应造成的各种问题,同时,方形的驱动器难以与圆形的镜面形成良好匹配,填充比较低。提出了一种环形静电排斥驱动器的MOEMS微镜,该静电排斥驱动器以环形排列,并围绕在镜面的周围,达到了与圆形镜面的良好匹配。所设计的微镜口径为204μm,并利用PolyMUMPS表面工艺进行加工。模拟仿真及实验测试结果显示,该微镜具有0.62°的最大旋转角,494μs的响应时间和1.191kHz的工作带宽,适用于一般光束扫描等的应用需求。     

Fabrication of multi-scale structures with multiple X-ray masks and synchrotron hard X-ray irradiations

Synchrotron hard X-ray irradiation can be utilized in lithography processes to manufacture precise structures. Due to the difficulty of precise X-ray mask fabrication in hard X-ray lithography, this X-ray process has been used mainly to fabricate precise microstructures. In this study, a technology is proposed for fabricating novel multi-scale patterns that include submicron-scale structures using hard X-rays. The required X-ray masks for submicron-sized patterning are fabricated by a simple UV lithography process and sidewall metal deposition. Above all, thanks to the high penetration capability of hard X-rays with sub-nanometer wavelengths, it is possible to employ multiple masks to fabricate a variety of patterns. By combining each sub-micron X-ray mask with typical micro-sized X-ray masks, a unique X-ray lithography is performed, and various multi-scale structures are fabricated. The usefulness of the proposed technology is demonstrated by the realization of these structures.     

微纳加工技术在微纳电子器件领域的应用

微纳加工技术推动着集成电路不断缩小器件尺寸和提高集成度，光学光刻技术依然是目前的主流微纳加工技术，同时有多种替代技术如电子束直写、极紫外光刻和投影电子束技术，文章介绍了自上而下的微纳加工技术的进展及其在微纳器件研制的重要作用。     

激光等离子体软X射线接近式光刻术初步研究

描述了用高功率脉冲激光打靶产生的等离子体作为软Ｘ射线源而进行的接近式软Ｘ射线光刻研究，采用负性辐射线光刻胶聚氯甲基苯乙烯，得到了一些新的实验结果。     

微纳加工技术在微纳电子器件领域的应用

微纳加工技术推动着集成电路不断缩小器件尺寸和提高集成度,光学光刻技术依然是目前的主流微纳加工技术,同时有多种替代技术如电子束直写、极紫外光刻和投影电子束技术,文章介绍了自上而下的微纳加工技术的进展及其在微纳器件研制的重要作用.     

软X射线投影光刻技术

软X射线投影光刻作为特征线宽小于0.1μm的集成电路制造技术,倍受日美两个集成电路制造设备生产大国重视。近年来,在软X射线投影光刻用无污染激光等离子光源、高分辨率大视场投影光学系统、无应力光学装调工艺、深亚纳米级镜面加工和多层膜制备、低缺陷反射式掩模、表面成像光刻胶、精密扫描机构等关键技术均取得了突破。     

Development of a DNA chip microarray using hydrophobic interaction between template and particle by using the random fluidic self-assembly method

In this paper, we report a new approach for DNA chip microarray fabrication. A multifunctional DNA chip microarray was prepared by randomly distributing a mixture of particles on a chip pattern. The particles were arranged on the chip pattern by the random fluidic self-assembly (RFSA) method, using a hydrophobic interaction for assembly. Establishing the walls improved the arrangement stability of the particles. As a result, each DNA was able to distinguish by using the tag written by a lithography process on the particles.     

反射式微光机电系统(MOEMS)的研究现状与展望

反射式微光机电系统是微光机电系统中的重要组成部分,近年来得到了较快的发展。介绍了反射式微光机电系统(MOEMS)的研究现状和最新进展。根据反射式微光机电系统的分类,列举了一些具有代表性的反射式MOEMS器件。简要介绍了反射式MOEMS的加工工艺;阐述了反射式MOEMS的应用领域;展望了发展前景。     

两种Z箍缩X射线总能量测量技术对比

薄膜量热计和闪烁探测系统是国内常用于Z箍缩辐射总能量测量的两种诊断手段。两种方法基于完全不同的诊断原理,通过对比其诊断结果可以提高Z箍缩X射线总能量测量的精度,加深对Z箍缩的理解。采用上述两种诊断装置对“强光一号”加速器Z箍缩实验中多种材料和构型的负载辐射总能量进行了测量。结果表明,对于Al丝阵负载,无论是单排还是双排平面丝阵,随着负载参数的变化,两种手段总能量测量结果均发生改变且呈正比,二者符合较好;但对于镀膜W丝阵两种方法的诊断结果差异较为明显,随着丝间距的增大,量热计测量结果明显减小,但闪烁探测系统的测量结果却变化较小,二者不再呈比例关系。通过模拟计算对产生上述现象的原因进行了分析,可以得出如下结论：(1)闪烁探测系统对低能光子响应较高,且响应能谱范围较量热计宽,因此所有的总能量测量结果比量热计测量结果略大;(2)Al丝阵等离子体辐射能谱分布范围较宽,主要辐射能段处于两种测量手段响应都比较平坦的区间内,因此两种手段测量结果符合较好;(3)W丝阵辐射主要集中在1 keV以下的软X射线能段,处于镍薄膜全吸收范围内,因此量热计测量结果应该是比较准确的;(4)对于闪烁探测系统测量结果对镀膜W丝阵负载参数不敏感的现象,一种可能的解释是：随着W丝阵丝间距增大,等离子体滞止时刻的温度减低,导致能谱软化,但辐射谱型向闪烁体灵敏度较高的方向移动。因此虽然总能量降低了,但闪烁探测系统的测量结果变化却不大;(5)辐射中电子的影响同样不可忽视。     

软X射线投影光刻技术

软 X射线投影光刻作为特征线宽小于 0 .1μm的集成电路制造技术 ,倍受日美两个集成电路制造设备生产大国重视。随着用于软 X射线投影光刻的无污染激光等离子体光源、高分辨率大视场投影光学系统、无应力光学装调工艺、深亚纳米级镜面加工和多层膜制备、低缺陷反射式掩模、表面成像光刻胶。     

基于锥形单玻璃管X射线聚焦镜表征X射线光源参数

X射线光源的焦斑尺寸和焦深对X射线光谱学,尤其是对于微区X射线衍射与荧光分析等领域十分重要的参数。如何高效而准确的表征这些参数对于X射线光源的应用和发展至关重要。现有的光源参数表征方法,尤其在表征微焦斑光源的参数时,都存在自身的局限性。锥形单玻璃管X射线聚焦镜是一种常用的X射线聚焦器件。根据锥形单玻璃管X射线聚焦镜滤波特性和几何特点,分析得到聚焦镜的聚焦光能量上限的大小受到光源焦斑尺寸的影响,提出这个能量上限与光源尺寸和光源到聚焦镜入口的距离之间的数学关系。设计了一种基于锥形单玻璃管X射线聚焦镜的表征X射线光源参数的方法。对锥形单玻璃管X射线聚焦镜的参数进行测量和确定后,将聚焦镜放置要测量的光源前,与光源形成聚焦光路。在光路准直并确保只有在聚焦镜内发生单次全反射的X射线射出聚焦镜的情况下,通过改变聚焦镜与光源焦斑距离并利用能谱探测系统来探测聚焦光并得到多个对应的聚焦光能谱。对所得能谱进行计算与分析,得到各能谱中的能量最大值,即聚焦光的能量上限。利用聚焦光能量上限、光源焦斑尺寸和光源到聚焦镜的距离之间的关系并结合线性拟合法,可同时得到光源焦斑尺寸和焦深。选用制造商给出焦斑尺寸约60 μm,焦深为20 mm的微焦斑钼靶光源作为测量对象,利用基于锥形单玻璃管X射线聚焦镜的表征方法测量的结果为焦斑尺寸为60.1 μm,焦深为19.7 mm。用小孔成像法表征该光源焦斑尺寸为60.3 μm,焦深为20.1 mm。相较于现有的方法,基于锥形单玻璃管X射线聚焦镜的表征X射线光源参数方法对表征微焦斑光源有一定优势,对表征高能X射线光源有潜在发展和利用价值。     

Proximity X-ray and extreme ultraviolet lithography

Present status and technical issues of proximity X-ray lithography (PXRL), especially synchrotron radiation (SR) lithography, and extreme ultraviolet lithography (EUVL) for use in the next generation lithography will be presented. To make SR lithography a practical method, many improvements in a wide range of lithographic components have been made over the past several years. These developments have been successfully applied to the fabrication testing of LSIs. For widespread industrial use, the feasibility and cost-effectiveness in mass production should be guaranteed. On the other hand, since there is a strongly demand for EUVL as a main candidate for the nodes of 70 and 50 nm, global consortiums have been making intense efforts to develop key components of EUVL, such as multilayer mirror and masks, resist processes, and sources. To make EUVL a major tool, timing in development and cost of ownership should be critical issues.