DFT characterization of nanostructured germanium surfaces induced by cobalt atoms

By deposition in ultra‐high vacuum of cobalt on a Ge(111)–c(2 × 8) surface, Mocking et al. obtained a surface reconstruction. In the present paper, we analyse the related atomic structure, proposed by these authors, by means of density functional theory calculations. The surface presents ordered clusters that consist of six Ge atoms arranged in a triangle, lying above three Co atoms. The latter are located at substitutional positions within the top plane of the Ge(111) first bilayer. These clusters are similar to what is obtained on part of the Co‐induced Si(111) surface. For this surface, the clusters are terminated either by six Si atoms or by one, two or three adatoms above the six Si atoms. As the Co–Ge clusters systematically display six protrusions in the scanning tunnelling microscopy measurements by Mocking et al., we investigated why Ge adatoms are not present. Comparison of the Gibbs energy, interatomic distances, as well as charge density indicates that Ge adatoms on top of Co‐Ge clusters are less stable than Si adatoms in the Co‐Si system. Copyright © 2013 John Wiley & Sons, Ltd.     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Surface morphology of Ge‐modified 3C‐SiC/Si films

The influence of Ge deposition prior to carbon interaction with 3° off‐axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high‐energy electron diffraction (RHEED) and X‐ray diffraction (XRD) revealed the formation of the cubic silicon carbide (3C‐SiC) modification. In situ spectroscopic ellipsometry measurements revealed a decreasing 3C‐SiC thickness with increasing Ge predeposition. Atomic force microscopy (AFM) studies revealed that the surface overlayer morphology is mainly formed by periodic step arrangements whose relevant geometric parameters, i.e. lateral separation, height and terrace width, depend on the Ge content. Besides the changes of the step morphology, the surface roughness and the grain size and the strain of the formed 3C‐SiC decreases with increasing germanium precoverage. Copyright © 2008 John Wiley & Sons, Ltd.     

Geometries,vibrational frequencies,and electron affinities of X2Cl (X=C,Si,Ge) clusters

Ab initio quantum chemical calculations have been performed on X₂Cl^? and X₂Cl (X = C, Si, Ge) clusters. The geometrical structures, vibrational frequencies, electronic properties and dissociation energies are investigated at the Hartree–Fock (HF), Møller–Plesset second‐ and fourth‐order (MP2, MP4), CCSD(T) level with the 6‐311+G(d) basis set. The X₂Cl (X = C, Si, Ge) and X₂Cl^? (X = Si, Ge) take a bent shape obtained at the ground state, while C₂Cl^? has a linear structure. The impact on internal electron transfer between the X₂Cl and the corresponding anional clusters is studied. The three different types of electron affinities (EAs) at the CCSD(T) are reported. The most reliable adiabatic electronic affinities, obtained at the CCSD(T)/cc‐pvqz level of theory, are predicted to be 3.30, 2.62, and 1.98 eV for C₂Cl, Si₂Cl, and Ge₂Cl, respectively. The calculated EAs of C₂Cl and Ge₂Cl are in good agreement with theoretical results reported. The correlation effects and basis sets effects on the geometrical structures and dissociation energies are discussed. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

Macroscopic single‐domain graphene sheet on Ni(111)

We observed in situ growth of a single graphene sheet on Ni(111) by low‐energy electron microscopy. The sheet was grown epitaxially beyond the steps on the substrate. The crystalline shapes of graphene islands were clearly seen; the straight edges of the island are crossed at either 60 or 120°, and the linear edges shifted perpendicular to the edge keeping the equilibrium shape. Graphene islands were united to form a single sheet without any grain boundaries and any wrinkles. The Ni substrate of several centimeters in size was covered with a single‐domain graphene sheet. Copyright © 2011 John Wiley & Sons, Ltd.     

(K4Li4)Al8Ge8O32·8H2O: an Li+‐exchanged potassium aluminogermanate with the zeolite gismondine (GIS) topology

The title compound, lithium potassium dialuminium di­ger­man­ium octaoxide dihydrate, (K,Li)‐(Al,Ge)‐GIS (GIS is gismondine), is the result of a 50% Li⁺ exchange into the K‐(Al,Ge)‐GIS structure. The (K,Li)‐(Al,Ge)‐GIS structure was determined from a 4 × 4 × 2 µm octahedral single crystal at the ESRF synchrotron X‐ray source. The ion exchange results in a symmetry transformation from I2/a for K‐(Al,Ge)‐GIS to C2/c for (K,Li)‐(Al,Ge)‐GIS. The structural change is due to disordering of K⁺ ions with Li⁺ ions along the [001] channel and ordering of water molecules in the [101] channels. The distance between sites partially occupied by K⁺ ions increases from 2.19 (3) Å in K‐(Al,Ge)‐GIS to 2.94 (3) Å in (K,Li)‐(Al,Ge)‐GIS. The Li⁺ ions occupy positions along the twofold axis at the intersection of the eight‐membered‐ring channels in a twofold coordination with water mol­ecules. For the four closest framework O²⁻ anions, the Li⃛O distances are 3.87 (4) Å.     

High‐Strain Shape Memory Behavior of PLA–PEG Multiblock Copolymers and Its Microstructural Origin

Shape memory properties of two thermoplastic multiblock copolymers composed of poly(lactic acid) (PLA) and poly(ethylene glycol) (PEG) having different PEG‐segment lengths of 6 and 11 kDa were studied. The performance as a shape memory polymer at high strain level (600%) and its interrelations with shape‐programming conditions, molecular orientation, and microstructural changes are elucidated. A significant contribution of strain‐induced crystallization of PLA segments to the improvement of temporary shape fixation was evidenced upon increasing draw ratio and/or shape‐holding duration as well as programming temperature (within certain range) without largely sacrificing the shape recoverability. Series of microstructural characterizations reveal the occurrence of fibrillar‐to‐lamellar transformation upon shape recovery (at 60 °C) of the samples programmed at 40 °C, generating shish–kebab crystalline morphology. Such phenomenon is responsible for the high‐strain shape memory effect of these materials. The unprecedented formation of shish–kebab structure at such relatively low temperature (instead of the melting temperature range) in solid state observed in these copolymers as well as their high‐strain shape memory functionality would bestow the promising future for their practicability in diverse areas. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2019 , 57, 241–256     

Influence of programming strain rates on the shape‐memory performance of semicrystalline multiblock copolymers

Multiblock copolymers named PCL‐PIBMD consisting of crystallizable poly(ε‐caprolactone) segments and crystallizable poly[oligo(3S‐iso‐butylmorpholine‐2,5‐dione)] segments coupled by trimethyl hexamethylene diisocyanate provide a versatile molecular architecture for achieving shape‐memory effects (SMEs) in polymers. The mechanical properties as well as the SME performance of PCL‐PIBMD can be tailored by the variation of physical parameters during programming such as deformation strain or applied temperature protocols. In this study, we explored the influence of applying different strain rates during programming on the resulting nanostructure of PCL‐PIBMD. Programming was conducted at 50 °C by elongation to ε_m = 50% with strain rates of 1 or 10 or 50 mm min^?1. The nanostructural changes were visualized by atomic force microscopy (AFM) measurements and investigated by in situ wide and small angle X‐ray scattering experiments. With increasing the strain rate, a higher degree of orientation was observed in the amorphous domains. Simultaneously the strain‐induced formation of new PIBMD crystals as well as the fragmentation of existing large PIBMD crystals occurred. The observed differences in shape fixity ratio and recovery stress of samples deformed with various strain rates can be attributed to their different nanostructures. The achieved findings can be relevant parameters for programming the shape‐memory polymers with designed recovery forces. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1935–1943     

Stress‐Induced Melting of Crystals in Natural Rubber: a New Way to Tailor the Transition Temperature of Shape Memory Polymers

Lightly cross‐linked natural rubber (NR, cis‐1,4‐polyisoprene) was found to be an exceptional cold programmable shape memory polymer (SMP) with strain storage of up to 1000%. These networks are stabilized by strain‐induced crystals. Here, we explore the influence of mechanical stress applied perpendicular to the elongation direction of the network on the stability of these crystals. We found that the material recovers its original shape at a critical transverse stress. It could be shown that this is due to a disruption of the strain‐stabilizing crystals, which represents a completely new trigger for SMPs. The variation of transverse stress allows tuning of the trigger temperature T_trig(σ) in a range of 45 to 0 °C, which is the first example of manipulating the transition of a crystal‐stabilized SMP after programming.     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.     

Epitaxy‐like orientation of nanoscale Ag islands grown on air‐oxidized Si(110)‐(5 × 1) surfaces

Growth of Ag islands under ultra‐high vacuum condition on air‐oxidized Si(110)‐(5 × 1) surfaces has been investigated by in situ reflection high energy electron diffraction and ex situ scanning electron microscopy and cross‐sectional transmission electron microscopy. A thin oxide is formed on Si via exposure of the clean Si(110)‐(5 × 1) surface to air. The oxide layer has a short range order. Deposition of Ag at different thicknesses and at different substrate temperatures reveal that the crystalline qualities of the Ag film are almost independent of the thickness of the Ag layer and depend only on the substrate temperature. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher temperatures. For deposition at 550 °C sharp spots in the reflection high energy electron diffraction pattern corresponding to an epitaxial orientation with the underlying Si substrate are observed. The presence of a short range order on the oxidized surface apparently influences the crystallographic orientation of the Ag islands. Copyright © 2011 John Wiley & Sons, Ltd.     

Shape memory polybenzoxazines based on a siloxane‐containing diphenol

A siloxane‐containing diphenol is synthesized from 1,1,3,3‐tetramethyldisiloxane and o‐allylphenol, followed by the Mannich condensation with aniline, methylamine, and formaldehyde yielding two siloxane‐containing benzoxazines. The onset polymerization temperature of aniline‐based benzoxazine is higher than that of the methylamine counterpart. The dynamic mechanical properties of the polybenzoxazines depend on the structure of the starting primary amines. Both polybenzoxazines exhibit one‐way dual‐shape memory behavior in response to changes in temperature, and they show excellent shape fixity ratios in bending, tension, and tensile stress–strain tests, high shape recovery ratios in bending and tension tests, but relatively low shape recovery ratios in tensile stress–strain test. The network chain segments including the alkylsiloxane units serve as a thermal control switch based on the glass transition temperatures (39 and 53 °C) for the polybenzoxazines. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1255–1266     

Shape‐memory effect in hyperbranched poly(ethyleneimine)‐modified epoxy thermosets

A series of shape‐memory epoxy thermosets were synthesized by crosslinking diglycidyl ether of bisphenol A with mixtures of commercially available hyperbranched poly(ethyleneimine) and polyetheramine. Thermal, mechanical and shape‐memory properties were studied and the effect on them of the content and structure of the hyperbranched polymer was discussed. Measurements showed that the glass transition temperature can be tailored from 60 °C to 117 °C depending on the hyperbranched polymer content, and all formulations showed an appropriate glassy/rubbery storage modulus ratio. Shape‐memory programming was carried out at TgE′ given the excellent mechanical properties of the materials, with maximum stress and failure strain up to 15 MPa and 60%, respectively. The resulting shape‐memory behavior was excellent, with maximum shape recovery and shape fixity of 98% as well as a fast shape‐recovery rate of 22%/min. The results show that hyperbranched poly(ethyleneimine) as a crosslinking agent can be used to enhance mechanical and shape‐memory properties with different effects depending on the crosslinking density. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 924–933     

Search for global-minimum geometries of medium-sized germanium clusters. II. Motif-based low-lying clusters Ge21-Ge29

We performed a constrained search for the geometries of low-lying neutral germanium clusters Ge(N) in the size range of 21 < or = N < or = 29. The basin-hopping global optimization method is employed for the search. The potential-energy surface is computed based on the plane-wave pseudopotential density functional theory. A new series of low-lying clusters is found on the basis of several generic structural motifs identified previously for silicon clusters [S. Yoo and X. C. Zeng, J. Chem. Phys. 124, 054304 (2006)] as well as for smaller-sized germanium clusters [S. Bulusu et al., J. Chem. Phys. 122, 164305 (2005)]. Among the generic motifs examined, we found that two motifs stand out in producing most low-lying clusters, namely, the six/nine motif, a puckered-hexagonal-ring Ge6 unit attached to a tricapped trigonal prism Ge9, and the six/ten motif, a puckered-hexagonal-ring Ge6 unit attached to a bicapped antiprism Ge10. The low-lying clusters obtained are all prolate in shape and their energies are appreciably lower than the near-spherical low-energy clusters. This result is consistent with the ion-mobility measurement in that medium-sized germanium clusters detected are all prolate in shape until the size N approximately 65.     

IR laser‐induced synthesis of nanostructured gemanium telluride in the gas phase

The gas‐phase synthesis and chemical vapour deposition of nanostructured germanium telluride has been achieved for the first time. The pulsed IR laser irradiation of gaseous CH₃)₄Ge? (CH₃)₂Te? SF₆ mixtures results in homogeneous decomposition of both organometallics and formation of GeTe_x (x = 1, 2). The amorphous GeTe₂ and crystalline GeTe were identified by Raman and X‐ray photoelectron spectroscopy and by electron diffraction. Their formation is explained by an intermediacy of germanium and tellurium clusters and by reaction between these clusters in a hot laser‐induced zone. Copyright © 2005 John Wiley & Sons, Ltd.     

Crystal Growth and Structure Refinement of K4Ge9

Deep‐red moisture and air sensitive single crystals of K₄Ge₉ were obtained by reacting GeO₂ and elemental Ge with metallic W and K at high temperature in a niobium ampoule. The crystal structure of the compound was determined by single crystal X‐ray diffraction experiments. K₄Ge₉ crystallizes in a polar space group R3c (No. 161), Z = 4 with a = 21.208(1) and c = 25.096(2) Å. The compound contains discrete Ge₉^4? Wade's nido‐clusters which are packed according to a hierarchical atom‐to‐cluster replacement of the Cr₃Si prototype and are separated by K⁺ cations. Two independent [Ge₉]^4? clusters A (at Cr positions) and B (at Si positions) are found with a ratio A:B = 3:1. The B ‐type cluster satisfactorily represents orientational disorder around the three‐fold axis.     

SERS and FDTD simulation of gold nanoparticles grafted on germanium wafer via galvanic displacement

Uniform and dense Au nanoparticles grown on Ge (Au/Ge) were fabricated by a facile galvanic displacement method and employed as surface‐enhanced Raman scattering (SERS) substrates. The substrates exhibited excellent reproducibility in the detection of rhodamine 6G aqueous solution with a relative standard deviation of <20%. The substrate showed a high Raman enhancement factor of 3.44 × 10⁶. This superior SERS sensitivity was numerical confirmed by the three‐dimensional finite‐difference time‐domain method, which demonstrated a stronger electric field intensity (|E/E₀|²) distribution around the Au nanoparticles grown on Ge. This facile and low‐cost prepared Au/Ge substrate with high SERS sensitivity and reproducibility might have potential applications in monitoring in situ reaction in aqueous solution. Copyright © 2014 John Wiley & Sons, Ltd.     

Zintl Clusters as Wet‐Chemical Precursors for Germanium Nanomorphologies with Tunable Composition

[Ge₉]^4? Zintl clusters are used as soluble germanium source for a bottom–up fabrication of Ge nanomorphologies such as inverse opal structures with tunable composition. The method is based on the assembly and oxidation of [Ge₉]^4? clusters in a template mold using SiCl₄, GeCl₄, and PCl₃ leading to Si and P‐containing Ge phases as shown by X‐ray diffraction, Raman spectroscopy, and energy‐dispersive X‐ray analysis. [Ge₉]^4? clusters are retained using ethylenediamine (en) as a transfer medium to a mold after removal of the solvent if water is thoroughly excluded, but are oxidized to amorphous Ge in presence of water traces. ¹H NMR spectroscopy reveals the oxidative deprotonation of en by [Ge₉]^4?. Subsequent annealing leads to crystalline Ge. As an example for wet‐chemical synthesis of complex Ge nanomorphologies, we describe the fabrication of undoped and P‐doped inverse opal‐structured Ge films with a rather low oxygen contents. The morphology of the films with regular volume porosity is characterized by SEM, TEM, and grazing incidence small‐angle X‐ray scattering.     

Ring Opening and Bidentate Coordination of Amidinate Germylenes and Silylenes on Carbonyl Dicobalt Complexes: The Importance of a Slight Difference in Ligand Volume

The reactions of [Co₂(CO)₈] with one equiv of the benzamidinate (R₂bzam) group‐14 tetrylenes [M(R₂bzam)(HMDS)] (HMDS=N(SiMe₃)₂; 1 : M=Ge, R=iPr; 2 : M=Si, R=tBu; 3 : M=Ge, R=tBu) at 20 °C led to the monosubstituted complexes [Co₂{κ¹M?M(R₂bzam)(HMDS)}(CO)₇] ( 4 : M=Ge, R=iPr; 5 : M=Si, R=tBu; 6 : M=Ge, R=tBu), which contain a terminal κ¹M–tetrylene ligand. Whereas the Co₂Si and Co₂Ge tert‐butyl derivatives 5 and 6 are stable at 20 °C, the Co₂Ge isopropyl derivative 4 evolved to the ligand‐bridged derivative [Co₂{μ‐κ²Ge,N‐Ge(iPr₂bzam)(HMDS)}(μ‐CO)(CO)₅] ( 7 ), in which the Ge atom spans the Co?Co bond and one arm of the amidinate fragment is attached to a Co atom. The mechanism of this reaction has been modeled with the help of DFT calculations, which have also demonstrated that the transformation of amidinate‐tetrylene ligands on the dicobalt framework is negligibly influenced by the nature of the group‐14 metal atom (Si or Ge) but is strongly dependent upon the volume of the amidinate N?R groups. The disubstituted derivatives [Co₂{κ¹M?M(R₂bzam)(HMDS)}₂(CO)₆] ( 8 : M=Ge, R=iPr; 9 : M=Si, R=tBu; 10 : M=Ge, R=tBu), which contain two terminal κ¹M–tetrylene ligands, have been prepared by treating [Co₂(CO)₈] with two equiv of 1 – 3 at 20 °C. The IR spectra of 8 – 10 have shown that the basicity of germylenes 1 and 3 is very high (comparable to that of trialkylphosphanes and 1,3‐diarylimidazol‐2‐ylidenes), whereas that of silylene 2 is even higher.     

Influence of local structure on local electric field in Island‐like silver films

The infrared absorption enhancement phenomenon in the normal configuration of vacuum‐evaporated metal films on a transparent substrate is known to depend not only on the metal film morphology but also on the local structures of metal particles. To date, however, few studies have examined the effect of local structure on the phenomenon. Size distributions of islands and gaps, along with the volume fractions of Ag in thin films, were measured using scanning electron microscopy as a function of film thickness. The local structure of Ag nano clusters deposited on silicon substrates was investigated using a total conversion electron yield X‐ray absorption fine structure (XAFS) method at the Ag K‐edge. We observed a correlation between the electromagnetic field intensity at the surface as evaluated by IR measurement and the coordination numbers evaluated by XAFS. We found that the film morphology had a greater effect on resonant and nonresonant contributions than did the local structure of a particle. Copyright © 2006 John Wiley & Sons, Ltd.