AES depth profiling with a tilted sample in front of a cylindrical mirror analyzer: quantification and profile shape changes according to an extension of the conventional MRI model

The influence of the tilt angle of a sample in front of a cylindrical mirror analyzer (CMA) on AES depth profiles is calculated with the conventional mixing‐roughness‐information (MRI) depth model and an extended MRI model. While the conventional model works with an average electron escape depth value, the extended model takes into account the intensity from different segments along the azimuth angle corresponding to different escape depth values before summing up for the total, measured intensity. The deviation between both approaches is generally less than 4%, even for the worst case at 47.7° tilt angle. The shape of the profile is slightly different for both approaches. Because, for a CMA with coaxial gun, the sample tilt angle varies as the electron beam incidence angle, the influence of the latter has to be additionally taken into account for quantification of AES. In reasonable agreement with experimental results it is shown that above 45° the Auger peak intensity of Cu (914 eV) increases up to about a factor of two for an incidence angle of 85°. Copyright © 2006 John Wiley & Sons, Ltd.     

Incident angle and energy dependences of low‐energy Ar+ ion sputtering of GaAs/AlAs multilayered system

Dependences of the depth resolution in Auger electron spectroscopy sputter‐depth profiling of a GaAs/AlAs superlattice reference material on the incident angle and energy of primary Ar⁺ ions were investigated. The results revealed that the depth resolution is improved for the lower primary energy as a square root of the primary energy of ions at both the incident angles of 50° and 70° , except for 100 eV at 50° , where the significant deterioration of the depth resolution is induced by the preferential sputtering of As in AlAs, and the difference in the etching rate between GaAs and AlAs. The deterioration of the depth resolution, i.e. the difference in the etching rate and the preferential sputtering, observed for 100 eV at 50° was suppressed by changing the incident angle of ions from 50° to 70° , resulting in the high‐depth resolution of ～1.3 nm. The present results revealed that the glancing incidence of primary ions is effective to not only reducing the atomic mixing but also suppressing the difference in the etching rates between GaAs and AlAs and the preferential sputtering in the GaAs/AlAs multilayered system. The results also suggest that careful attention is required for the optimization of conditions of sputter‐depth profiling using GaAs/AlAs superlattice materials under low‐energy ion irradiation. Copyright © 2009 John Wiley & Sons, Ltd.     

Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

A Si crystal layer on SiO₂/Si was implanted using 0.4-MeV Kr⁺, Ag⁺, and Au⁺ at ion fluences of 0.5 × 10¹⁵ to 5.0 × 10¹⁵ cm⁻². Subsequent annealing was performed at temperatures of 450° and 800° for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena; therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He⁺ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.     

Subnanometre depth resolution in sputter depth profiling of Si layers using grazing‐incident low‐energy O2+ and Ar+ ions

The sputter damage profiles of Si(100) by low‐energy O₂⁺ and Ar⁺ ion bombardment at various angles of incidence were measured using medium‐energy ion scattering spectroscopy. It was observed that the damaged Si surface layer can be minimized down to 0.5–0.6 nm with grazing‐incident 500 eV Ar⁺ and O₂⁺ ions at 80°. To illustrate how the damaged layer thickness can be decreased down to 0.5 nm, molecular dynamics simulations were used. The SIMS depth resolution estimated with trailing‐edge decay length for a Ga delta‐layer in Si with grazing‐incident 650 eV O₂⁺ was 0.9 nm, which is in good agreement with the measured damaged layer thickness. Copyright © 2004 John Wiley & Sons, Ltd.     

Boron implantation in Si: Channeling effects studied by SIMS and simulation

The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed.     

Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films

Good accuracy in depth profile analyses of nitrogen in ultrathin oxynitride films is desirable for process development and routine process monitoring. Low energy SIMS is one of the techniques that has found success in the accurate characterization of thin oxynitride films. This work investigated the artifacts in a typical depth profile analysis of nitrogen with the current SIMS technique and the ways to improve the accuracy by selecting optimal analytical conditions. It was demonstrated that surface roughness developed rapidly in a SiO₂/Si stack when it was bombarded with an O₂⁺ beam at 250 eV and angle of incidence from 70 to 79° . The roughness caused distortion in the measured depth profiles of nitrogen and the major component elements. However, the above roughness and the distortion in the depth profiles can be eliminated by using a 250 eV O₂⁺ beam at an angle of incidence above 80° . Depth profile analyses with a 250 eV 83° O₂⁺ beam exhibited minimal surface roughening and insignificant variation in the secondary ion yield of SiN^? from SiO₂ bulk to the SiO₂/Si interface, facilitating an accurate analysis of nitrogen distribution in a SiO₂/Si stack. In addition, depth profiles of the major component elements such as ¹⁸O^? and ²⁸Si^? delivered clear information on the location of the SiO₂/Si interface. Using the new approach, we compared nitrogen distribution in thin SiNO films with the decoupled‐plasma nitridation (DPN) at various powers. Copyright © 2008 John Wiley & Sons, Ltd.     

Simulated parametric optimization of the back-lit Si solar cell

The back-lit design is viable for the Si solar cell because Si is an indirect-gap semiconductor that requires a relatively long absorption depth. In this work, key parameters relating to the operation of the back-lit mono-crystalline Si solar cell are investigated by using the Medici device simulator. On the effect of the photon incident angle on the solar cell power, a reduction of as much as 16% is observed when the incident angle is reduced 3.8° from the vertical incidence. The ideal thickness of the p-type substrate that leads to the maximum cell power is found to be 70 μm or less. In the back-lit design, both the n-type collector contact and the p-type substrate contact are located on the front side. To the extent of the 10 μm-wide design investigated, it is found that the larger the n-type collector width, or the smaller the p-type substrate contact, the larger the cell power. In regards to the substrate and collector doping, the optimum doping concentrations leading to a maximum cell power of 2.28 × 10^?2 W cm^?2, or 22.8 mW cm^?2, are found to be 1 × 10¹⁶ cm^?3 and 1 × 10¹⁷ cm^?3 for the substrate and the collector, respectively. In terms of the wavelength of the incident light, the cell power is nearly steady up to 0.8 μm, but decreases rapidly above, as the photon energy falls to near or under the energy gap. All considered, the back-lit design, which simplifies fabrication by putting both the cathode and the anode on the front side, is found to produce a cell power as little as 15% less than that of a standard front-lit design.     

Quantitative analysis of the Ge concentration in a SiGe quantum well: comparison of low-energy RBS and SIMS measurements

The germanium concentration and the position and thickness of the quantum well in molecular beam epitaxy (MBE)-grown SiGe were quantitatively analyzed via low-energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). In these samples, the concentrations of Si and Ge were assumed to be constant, except for the quantum well, where the germanium concentration was lower. The thickness of the analyzed quantum well was about 12 nm and it was situated at a depth of about 60 nm below the surface. A dip showed up in the RBS spectra due to the lower germanium concentration in the quantum well, and this was evaluated. Good depth resolution was required in order to obtain quantitative results, and this was obtained by choosing a primary energy of 500 keV and a tilt angle of 51° with respect to the surface normal. Quantitative information was deduced from the raw data by comparing it with SIMNRA simulated spectra. The SIMS measurements were performed with oxygen primary ions. Given the response function of the SIMS instrument (the SIMS depth profile of the germanium delta (δ) layer), and using the forward convolution (point-to-point convolution) model, it is possible to determine the germanium concentration and the thickness of the analyzed quantum well from the raw SIMS data. The aim of this work was to compare the results obtained via RBS and SIMS and to show their potential for use in the semiconductor and microelectronics industry. The detection of trace elements (here the doping element antimony) that could not be evaluated with RBS in low-energy mode is also demonstrated using SIMS instead.     

Analysis of thin films and molecular orientation using cluster SIMS

A study of phenylalanine films of different thicknesses from submonolayer to 55 nm on Si wafers has been made using Bi_n⁺ and C₆₀⁺ cluster primary ions in static SIMS. This shows that the effect of film thickness on ion yield is very similar for all primary ions, with an enhanced molecular yield at approximately 1 monolayer attributed to substrate backscattering. The static SIMS ion yields of phenylalanine at different thicknesses are, in principle, the equivalent of a static SIMS depth profile, without the complication of ion beam damage and roughness resulting from sputtering to the relevant thickness. Analyzing thin films of phenylalanine of different thicknesses allows an interpretation of molecular bonding to, and orientation on, the silicon substrate that is confirmed by XPS. The large crater size for cluster ions has interesting effects on the secondary ion intensities of both the overlayer and the substrate for monolayer and submonolayer quantities. This study expands the capability of SIMS for identification of the chemical structure of molecules at surfaces. © Crown copyright 2010.     

Density–depth profiles of an As‐implanted Si wafer studied by repeated planar sputter etching and total reflection x‐ray fluorescence analysis

The implantation of a high dose of high‐energy ions into an Si wafer causes amorphization of the original monocrystalline structure within a near‐surface layer. The in‐depth distribution of both Si atoms of the wafer and As ions implanted at a dose of 1 × 10¹⁷ ions cm^?2 and an energy of 100 keV is studied. A novel method combining a repeated planar and broad sputter etching with differential weighing, surface analysis by total reflection x‐ray fluorescence and Tolansky interferometry is used for this investigation. Different depth profiles are recorded on the nanometre scale for the concentration defined as the mole ratio of As and Si, for the mass density of the implanted layer and for the number density of As and Si. The results generally correspond with measurements of Rutherford backscattering spectrometry and only deviate when the assumptions made for the mass density do not fit well. An appropriate approach to this quantity involves the number density of implanted ions but, furthermore, considers a variation of the number density of Si atoms during implantation, especially for a high dose and high‐energy implantation. The variation can be taken into account by a factor γ, where γ > 1 indicates compression and γ < 1 indicates extension of the original crystalline structure. For the above mentioned implantation, γ is measured separately for each sublayer to obtain accurate depth profiles. Copyright © 2003 John Wiley & Sons, Ltd.     

Low temperature plasma for the preparation of crater walls for compositional depth profiling of thin inorganic multilayers

An indirect, compositional depth profiling of an inorganic multilayer system using a helium low temperature plasma (LTP) containing 0.2% (v/v) SF₆ was evaluated. A model multilayer system consisting of four 10 nm layers of silicon separated by four 50 nm layers of tungsten was plasma‐etched for (10, 20, 30) s at substrate temperatures of (50, 75, and 100) °C to obtain crater walls with exposed silicon layers that were then visualized using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) to determine plasma‐etching conditions that produced optimum depth resolutions. At a substrate temperature of 100 °C and an etch time of 10 s, the FWHM of the second, third, and fourth Si layers were (6.4, 10.9, and 12.5) nm, respectively, while the 1/e decay lengths were (2.5, 3.7, and 3.9) nm, matching those obtained from a SIMS depth profile. Though artifacts remain that contribute to degraded depth resolutions, a few experimental parameters have been identified that could be used to reduce their contributions. Further studies are needed, but as long as the artifacts can be controlled, plasma etching was found to be an effective method for preparing samples for compositional depth profiling of both organic and inorganic films, which could pave the way for an indirect depth profile analysis of inorganic–organic hybrid structures that have recently evolved into innovative next‐generation materials. Copyright © 2016 John Wiley & Sons, Ltd.     

Nanostructuring at the surface of low‐energy lead‐implanted silicon by electron beam annealing

Low‐energy lead ion implantation and high‐temperature electron beam annealing were used to study the potential of producing Pb nanostructures on Si. Pb⁺ ions were implanted at high dose into p‐type (100) Si to the depth of 8.0 nm. The implanted samples were annealed under high vacuum conditions with an electron beam at 200–700 °C for 15 s. Rutherford Backscattering Spectrometry (RBS) shows rapid out‐diffusion of Pb atoms above 400 °C. However, some Pb atoms are still present in the near‐surface region after annealing the implanted samples at 700 °C. Lead nanostructures were found on samples annealed above 300 °C. Annealing the samples at 450 °C causes the formation of nanostructures as tall as 4.1 ± 0.1 nm. Many of these are arranged in ‘web‐like’ strings that extend over micrometer distances. Occasionally, much larger nano‐features (as wide as 500 nm in diameter, average height of 1.5 nm) appear in the centre of the strings. Annealing samples well above the melting point of lead results in randomly distributed small nanometer‐sized Si nano‐dots. Copyright © 2008 John Wiley & Sons, Ltd.     

Changes in the surface morphology induced by 1.0‐MeV Au ion bombardment of Ti and Ti‐6Al‐4V

The effects of surface sputtering by 1.0‐MeV Au ion implantation in commercially pure Ti and its alloy Ti‐6Al‐4V have been studied. These materials are associated with applications in orthopaedic implants. There are few studies that try to explain the ion implantation process of Au in these materials when considering the effects generated on the surface by sputtering, especially at energies of the order of MeV. Discs of these materials were mirror polished and then implanted with 1.0‐MeV Au ions for 4.7 × 10¹⁷ ions/cm² at 45° incident angle with respect to the surface. Part of the eroded material was deposited simultaneously on glass slides to determine their spatial distribution. These discs and the slides were analysed by Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM), optical microscopy and atomic force microscopy. The implanted materials show the initial production of surface ripples that evolve into banded structures. Copyright © 2014 John Wiley & Sons, Ltd.     

激光刻蚀硅表面的形貌及其对浸润性的影响

利用脉冲激光在Si表面刻蚀具有不同宽度和深度的微槽形貌, 通过测量接触角的大小研究其浸润特性, 并分析了形貌与浸润性的关系. 结果表明, 在Si表面刻蚀微槽深度一定的条件下, 刻蚀微槽宽度越宽, 接触角越小; 在Si表面刻蚀微槽宽度一定的条件下, 刻蚀微槽越深, 接触角越大, 最高可达165°. 而且Si表面上刻蚀后产生的细微尖峰结构对其浸润特性有显著的影响. 因此, 利用激光刻蚀表面方法可以在一定程度上调控固体表面的润湿性能.     

Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

X-ray study of substrate-induced alignment of a smectic A liquid crystal

Abstract

We have performed a structural study of the liquid crystal (LC) octylcyanobiphenyl (8CB), deposited on gratings and flat surfaces, using high resolution X-ray scattering as a function of film thickness. 8CB is a room temperature smectic A₂, with a layer spacing of 31·6 Å. Glass was used as substrate and treated with either one of the organic surfactants MAP or DMOAP. Surface tension forces cause the liquid crystal molecules to align perpendicularly with respect to the plane of the substrate at the air interface. Competing with the LC-air interface, which is a strong aligner, a grating at the LC-substrate interface produces distortions in the smectic layering with an excess of elastic energy, which favours alignment parallel to the substrate and the grooves. Our purpose was to detect the onset and evolution of parallel alignment as a function of film thickness. The studies used 9 keV (1·403 Å) X-rays focused to a spot size of 2 mm² at the sample position. In-plane scans, which detect the smectic layers perpendicular to the plane of the substrate, were done at angles φ = 0° and 90° with respect to the gratings to ascertain the molecular orientation, at a nominal X-ray incidence angle of α = 0°. In order to observe regions of varying smectic layer orientation within the film, we performed a series of scans where the out-of-plane tilt angle χ changed from 0°, corresponding to scattering in the plane of the film, to 90°, which corresponds to scattering normal to the surface of the film. The results from these scans were fitted to a multilayer model where the orientation of the smectic layers varies as a function of film depth. The analysis confirmed our earlier observations that surface tension at the air interface plays a dominant role in the alignment of the LC molecules.     

On the origin of high optical director tilt in a partially fluorinated orthoconic antiferroelectric liquid crystal mixture

We have investigated the orthoconic antiferroelectric liquid crystal mixture W107 by means of optical, X-ray and calorimetry measurements in order to assess the origin of the unusally high tilt angle between the optic axis and the smectic layer normal in this material. The optical birefringence increases strongly below the transition to the tilted phases, showing that the onset of tilt is coupled with a considerable increase in orientational order. The layer spacing in the smectic A* (SmA*) phase is notably smaller than the extended length of the molecules constituting the mixture, and the shrinkage in smectic C* (SmC*) and smectic C_a* (SmC_a*) is much less than the optical tilt angle would predict. These observations indicate that the tilting transition in W107 to a large extent follows the asymmetric de Vries diffuse cone model. The molecules are on average considerably tilted with respect to the layer normal already in the SmA* phase but the tilting directions are there randomly distributed, giving the phase its uniaxial characteristics. At the transition to the SmC* phase, the distribution is biased such that the molecular tilt already present in SmA* now gives a contribution to the macroscopic tilt angle. In addition, there is a certain increase of the average tilt angle, leading to a slightly smaller layer thickness in the tilted phases. Analysis of the wide angle scattering data show that the molecular tilt in SmC_a* is about 20° larger than in SmA*. The large optical tilt (45°) in the SmC_a* phase thus results from a combination of an increased average molecule tilt and a biasing of tilt direction fluctuations.     

Enhancement of electron-induced X-ray intensity for single particles under grazing-exit conditions

Grazing-exit electron probe microanalysis (GE-EPMA) was performed for single Al₂O₃ and atmospheric particles, deposited on a flat Si substrate coated by gold, by using an aperture (1 mm in diameter) in front of an energy-dispersive X-ray detector. Silicon Kα X-rays from the Si substrate were strongly observed at an exit angle of ∼45°. However, they disappeared at grazing-exit angles about 0° and only the X-rays from particles were detected. Furthermore, Al Kα and O Kα intensities from single Al₂O₃ particle were enhanced approximately three- and sixfold at the grazing-exit angles (∼1°), respectively, in comparison with those at large angle (∼7°). The background intensities at the energy of Al Kα and O Kα almost monotonously decreased with decreasing exit angle. As a result, the intensity ratios of Al Kα and O Kα X-rays to the background intensities were enhanced five- and sixfold, respectively. This enhancement is considered to be caused by the interference effect of both directly detected X-rays and reflected X-rays on the flat substrate. The similar results are also obtained for Al Kα, Si Kα, K Kα and Ca Kα emitted from single atmospheric particle. The significance of the matrix effect in the particle is also pointed out.     

Design and fabrication of 2 kHz nematic liquid crystal variable retarder with reflection mode

ABSTRACT

This study proposes a simple method of designing a high-speed liquid crystal variable retarder (LCVR) with reflection mode. First, a series of simple formulas is provided for analysing the effects of tilt incidence and birefringence of the liquid crystal on the phase retardation and response time of the LCVR. Then, a reflective LCVR is fabricated to validate the theoretical analysis. Measured results show that the response speed can reach 2.7 kHz with a phase retardation of 1 λ. Furthermore, the theoretical curve is close to the measured curve while the incident angle is less than 10°. However, the theoretical and measured values show a considerable difference under a large incident angle. This problem is discussed, and a modified method is given. This work is helpful for the design and fabrication of high-speed LCVR.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.