How a Fano Resonance Crosses the Mobility Edge in Quantum Waveguides

new scenario for the occurrence of a Fano resonance in the transmission probability of electron waveguides is investigated using a coupled-channel theory. Both a quantum dot and an antidot with either short- or finite-range interaction are embedded in the electron waveguide. Particularly, when the Fano resonance occurs close to the mobility edge (channel threshold), it is shown that Γ~U ₁₂ ^4/3 , where Γ is the resonance width and U₁₂ is the coupling strength between bound state and continuum. This is in contrast to the usual result Γ ~U ₁₂ ² , which is valid when the resonance occurs far from the mobility edge. Furthermore, it is shown that increasing the size of both dot and antidot leads to larger resonance width.     

Mode-matched Fano resonances for all-optical switching applications

We introduce the concept of mode-matched Fano resonances in one-dimensional, subwavelength, diffraction gratings. These resonances are characterized by an extremely high quality (Q)-factor and lend themselves well for applications to ultra-low power, all-optical switching devices at telecommunication wavelengths. We provide examples of diffraction gratings made of a chalcogenide glass (As₂S₃) where, thanks to the mode-matched Fano resonances, all-optical switching is obtained at local field intensities well below the photo-darkening threshold of the material.     

Wideband slow light achievement in MIM plasmonic waveguide by controlling Fano resonance

In this paper, we have investigated the characteristics of an asymmetric shaped Fano line in a metal–insulator–metal (MIM) plasmonic waveguide side coupled to two resonating stub structures. The spectral properties of Fano resonance are quite distinct due to the destructive interference between a two propagating plasmon modes. Two structural parameters are carefully adjusted: physical separation between both the resonating stubs and length of resonating stubs. By tailoring the separation between both the resonating structures, coupling between both the plasmon modes is controlled, and hence asymmetric nature of Fano line can be shaped accordingly. Resonance condition of Fano line can be tuned by scaling the length of stubs. A strong red shift in resonating wavelength with varying degree of asymmetry is observed, when length of resonating structures is increased. The sharp resonant peak, due to an asymmetric shaped Fano resonance is generally accompanied by large dispersion that results in reduction of group velocity of light near Fano resonance. By controlling the coupling between resonating stub, or by scaling the length of lower resonating stub, large value of group index (n_g = 75) and delay bandwidth product (DBP = 0.2533) is obtained. The structure can be modified to suit different applications in optical buffers, optical switches and nonlinear optics devices.     

Screening of excitonic states by low-density 2D charge carriers in GaAs/AlGaAs quantum wells

Screening of excitonic states by a system of 2D electrons (or holes) in GaAs/AlGaAs single quantum wells is studied. With increasing concentration of 2D charge carriers, a threshold-type disappearance of excitonic states is observed in both luminescence and reflectance spectra. The higher the quality of the 2D system, the lower the corresponding threshold concentration. In the best systems, the collapse of excitonic states occurs at unexpectedly low electron densities n _e =5×10⁹ cm^?2, which correspond to the mean dimensionless distance between the particles r _s =8. This value far exceeds the threshold values observed for 3D systems (r _s ≈2), as well as the values obtained for quantum wells in previous studies. The problem of measuring the concentration of low-density 2D charge carriers in photoexcitation conditions is solved by applying the method of optical detection of the dimensional magnetoplasma resonance. This method provides reliable measurements of the density of a 2D system to the values about 10⁹ cm^?2.     

Pool-Frenkel effect and high frequency dielectric constant determination of semiconducting P2O5-Li2MoO4-Li2O and P2O5-Na2MoO4-Na2O bulk glasses

The ternary 70P₂O₅-10Li₂MoO₄-20Li₂O and 70P₂O₅-10Na₂MoO₄-20Na₂O glasses, prepared by the press-melt quenching technique, were studied at temperatures between 298 and 418 K for their high dc electric field properties. For the above purpose, the effect of a strong electric field on the dc conduction of these amorphous bulk samples was investigated using the gap-type electrode configuration. At low electric fields, the current-voltage (I — V) characteristics have a linear shape, while at high electric fields (> 10³ V/cm), bulk samples show nonlinear effects (nonohmic conduction). Current-voltage curves show increasing departure from Ohm’s law with increasing current density, leading to critical phenomena at a maximum voltage (threshold voltage), known as switching (switch from a low-conduction state to a higher-conduction state at threshold voltage). The Pool-Frenkel high-field effect was observed at electrical fields of about 10³–10⁴ V/cm; then the lowering factor of the potential barrier, the high frequency dielectric constant, and the refractive index of these glasses were determined.      

Line shape parameters study of the 6p7p (<Superscript>1</Superscript>P<Subscript>1</Subscript>, <Superscript>3</Superscript>D<Subscript>1</Subscript> and <Superscript>3</Superscript>P<Subscript>1</Subscript>): Autoionizing resonances in barium

We report a systematic line shape analysis study of the 6p7p configuration based ¹P₁, ³D₁ and ³P₁ autoionizing resonances in barium using a Nd:YAG pumped dye laser system in conjunction with a thermionic diode ion detector. The even parity isolated autoionizing resonances have been approached via four intermediate states 6 snp ¹P₁ (6 ≤n ≤8) and 5d6p ¹P₁. A comparison of the Fano parameters of the resonance profiles reveals that the width of an autoionizing resonance is independent of the excitation path while the line profile parameter changes with the selection of different intermediate states.     

IR laser ablation of doped poly(methyl methacrylate)

We investigate the TEA CO₂ laser ablation of films of poly(methyl methacrylate), PMMA, with average M_W 2.5, 120 and 996 kDa doped with photosensitive compounds iodo-naphthalene (NapI) and iodo-phenanthrene (PhenI) by examining the induced morphological and physicochemical modifications. The films casted on CaF₂ substrates were irradiated with a pulsed CO₂ laser (10P(20) line at 10.59 μm) in resonance with vibrational modes of PMMA and of the dopants at fluences up to 6 J/cm². Laser induced fluorescence probing of photoproducts in a pump and probe configuration is carried out at 266 nm. Formation of naphthalene (NapH) and phenanthrene (PhenH) is observed in NapI and PhenI doped PMMA, respectively, with relatively higher yields in high M_W polymer, in similarity with results obtained previously upon irradiation in the UV at 248 nm. Above threshold, formation of photoproducts is nearly complete after 200 ms. As established via optical microscopy, bubbles are formed in the irradiated areas with sizes that depend on polymer M_W and filaments are observed to be ejected out of the irradiated volume in the samples made with high M_W polymer. The implications of these results for the mechanisms of polymer IR laser ablation are discussed and compared with UV range studies.     

Effective nonlinear GaSe crystal. Optical properties and applications

We present an overview of the current state of the literature and research performed by the authors of the present paper on the experimental and theoretical results on the structural-, optical-, nonlinear optical (NLO)-properties (including two-photon absorption (TPA) and the terahertz (THz) range of spectra) and practical applications of a highly anisotropic Gallium Selenide (GaSe) semiconductor with emphasis on the ?-GaSe. Physical properties of ?-GaSe are important to researchers and designers developing different devices by using this material. This crystal possesses an outstanding NLO properties: high optical birefringence Δn ～ 0.3 at 700 nm; high transparency range (0.7?18.0 μm) with low absorption coefficient (α ≤ 0.3 cm^?1); very high nonlinear susceptibility χ⁽²⁾ (d ₂₂ ≈ 86 ± 17 pm/V, corresponding to (2.0 ± 0.4) × 10^?7 esu) that is used for phase matched second harmonic generation (SHG) in a wide transparency range; high power threshold for optical damage; possibility to perform optical frequency conversion under phase-matching conditions in the near- to mid-IR and THz range of spectra, etc. The domain structure of crystal in connection with the NLO properties is discussed as studied by confocal Raman microscopy experiments. Perspectives for future research of GaSe are considered in the present article, which does not pretend to be one reflecting all existing papers on GaSe crystal and discussed subjects.     

STUDIES ON THE DYNAMICS OF OPTICAL BISTABILITY SWITCHING IN THE INTERNAL FABRY-PEROT CAVITY WITH A CdSxSe1-x-DOPED GLASS CHANNEL WAVEGUIDE

We report the optical bistability in CdS_xSe_1-x-doped glass channel waveguide with rise and fall times of about 24 and 30ps, respectively, in bistable switching by means of fiber coupling input with a power of about 3mW. The third-order nonlinear susceptibility (x⁽³⁾) of CdS_xSe_1-x-doped glass is estimated experimentally to be 1.8×10^-9 esu. The high speed switching and the value of x⁽¹⁾ show that the optical bistability is caused by an optical nonlinearity which can be attributed to the band-filling effect.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

A low-lying resonance in the spectrum of H

It was proved by Pekeris⁽¹⁾ that the singly excited states of H^- lie exactly at, or slightly above, the ground state of hydrogen. Using a theory of Fano,⁽²⁾ these fictitious states will have a configuration interaction with the H^- continuum. The strength of this configuration interaction is computed for the mixing of a 1s2p¹P⁰ state with the H^- continuum for different values of the fictitious binding energy of the 2p valence electron. In every case, the effect of the configuration interaction is to induce a rapid change of the phase shift of the continuum wave function by a quantity of π/2 over an energy range of a few times 0.01 eV, at an energy somewhat above the hydrogen ground state. The variation from π/2 to π is much slower. Such a swift change of the phase shift may be identified with the occurrence of a low-lying shape resonance.     

Study of the switching phenomena of TlGaS2 single crystals

Single crystals of TlGaS₂ were prepared by a special modified Bridgman technique and used to investigate the switching phenomena. The particular interest shown in switching studies of p-type TlGaS₂ compound is associated with the possibility of its uses as an effective switching and memory elements in electronic devices. The switching effect observed in such crystal shows a memory character. Using a crystal holder and cryostat we measured the switching phenomenon at different ambient conditions such as temperature, light illumination as well as sample thickness. Pronounced parameters for switching for sample of thickness 0.17 cm were determined from the experimental data such as threshold voltage V_th = 400 V, threshold current I_th = 37 μA, holding voltage V_h = 350 V, holding current I_h = 42.3 × 10⁻⁴ A, threshold power P_th = 1.48 × 10⁻² W, threshold field E_th = 196.429 V/cm as well as the ratio between the resistance in the off state R_OFF to the resistance in the conducting state R_ON as 130.253. The factors affecting these parameters have also been investigated.     

Threshold electron impact excitation of Cl2

A high resolution electron impact threshold spectroscopy technique was used to examine the excitation of Cl₂ in the 2–14 eV region. This study complements previous photon absorption and emission measurements, because it is capable of detecting transitions which are optically forbidden. In the region up to 7.5 eV, broad dissociative structures are correlated with optically active valence states, although relative intensities in the threshold spectrum differ considerably and indicate a substantial contribution from the optically forbidden transitions. At 7.46 eV a series of 5 equidistant sharp peaks is detected and interpreted as arising from the² π _g Feshbach resonance, which differs from the ground state positive ion Cl ₂ ⁺ by a pair of Rydberg electrons: (4sσ)². The decay channels responsible for the appearance of the resonance in a threshold spectrum are discussed and it is suggested that they include several valence states of the (2431) and (2341) configurations, whose potential energy curves cross the Cl ₂ ^? ,²π_g curve in the region of energy at which the resonance state is formed. At higher incident electron energies and up to ionisation, Rydberg states predominate, starting with (2430) 4s^3,1 π _g states detected for the first time. The absence of broad peaks above 8 eV and the irregular appearance of Rydberg bands is consistent with the strong Rydberg-valence configuration mixing proposed by Peyerimhoff and Buenker. Where our resolution permits comparison, good general agreement is found with recent synchrotron radiation absorption measurements of optically allowed transitions.     

Photoionization and double excitation spectrum of Be2+

The photoionization cross-section of Be²⁺ has been measured in the range from threshold at 154 eV up to 420 eV. The value at threshold of [1.4 ± 0.2] × 10^?18 cm² is in good agreement with theoretical predictions. The method used was that of absorption using two laser produced plasmas. The doubly excited resonance 2s2p ¹p⁰ at 281.25 ± 0.07 eV has been observed and its Fano profile measured.     

Effective indexes of refraction and limiting properties of ethyl red

With the Z-scan method, the nonlinear optical properties of ethyl red (ER) in ethanol solution are measured by using the lasers of 441.6, 535 and 633 nm, respectively. As a result, the effective indexes of refraction n₂ of CR at the three wavelengths are in the range from 10⁻¹⁰ to 10⁻⁹ m² W⁻¹. The nonlinear absorption of ER ethanol film at the three wavelengths is measured respectively. The self-diffraction of the ER solution at 441.6 and at 535 nm is investigated, respectively, and the results indicate it possesses high quality of optical limiting.     

Superconductivity of In-doped Sn0.62Pb0.33Ge0.05Te alloys

A study of the Hall and Seebeck coefficients and of resistivity has been carried out on an Sn_0.62Pb_0.33Ge_0.05Te alloy doped by 5 and 10 at. % In. A superconducting transition with the maximum critical temperature T _C～4 K has been discovered in samples with hole concentrations p≥1×10²¹ cm^?3. The dependence of T _C on hole concentration has been established to be of a threshold nature. The onset of superconductivity is accompanied practically simultaneously by a growth of the resistivity and a sharp drop of the Seebeck coefficient. These features in the experimental data indicate the existence of a band of In resonance states within the allowed valence-band spectrum and strong resonance hole scattering to impurity states. The threshold character of the T _C(p) dependence is connected with the holes filling the resonance states. A positive correlation between the resonance scattering intensity and the critical temperature is observed.     

Fano interference between the E2 (17 cm−1) optical mode and one-phonon continuum scattering from β-AgI

Resonant interference between the E₂ (17 cm^?1) optical mode and the continuum of one-phonon partial density of states has been observed in β-AgI, and has been shown to follow Fano formalism. The temperature dependence of the coupling parameter q shows a substantial variation as T approaches T_c. A qualitative explanation of such behaviour is made in terms of phonon assisted activation of Frenkel defects, which increases more rapidly as the superionic transition temperature is approached.     

Exciton absorption parameters in TlGaS2 crystals

It is shown that, because the shape of the exciton absorption curve in crystalline TlGaS₂ is described by the Fano antiresonance profile, the experimentally observed exciton peak corresponds to a modified state which is the result of the configuration interaction of a discrete state (exciton) with the quasi-continuum of conduction-band states. The oscillator strength for the transition to the discrete (“pure”) exciton state is calculated as F ₀=1.22×10^?2. The exciton transition selection rules are calculated for two assumed symmetry groups, D _2h and D _4h . An analysis of the selection rules for the dipole-allowed exciton transition permits one to conclude that the symmetry group for the TlGaS₂ crystal is D _2h .     

A high phase-space density mixture of 87Rb and 133Cs: towards ultracold heteronuclear molecules

We report the production of a high phase-space density mixture of ⁸⁷Rb and ¹³³Cs atoms in a levitated crossed optical dipole trap as the first step towards the creation of ultracold RbCs molecules via magneto-association. We present a simple and robust experimental setup designed for the sympathetic cooling of ¹³³Cs via interspecies elastic collisions with ⁸⁷Rb. Working with the |F = 1,m _F = +1〉 and the |3, +3〉 states of ⁸⁷Rb and ¹³³Cs respectively, we measure a high interspecies three-body inelastic collision rate ～10^?25?10^?26 cm⁶ ? s^?1 which hinders the sympathetic cooling. Nevertheless by careful tailoring of the evaporation we can produce phase-space densities near quantum degeneracy for both species simultaneously. In addition we report the observation of an interspecies Feshbach resonance at 181.7(5) G and demonstrate the creation of Cs₂ molecules via magneto-association on the 4(g)4 resonance at 19.8 G. These results represent important steps towards the creation of ultracold RbCs molecules in our apparatus.     

Optical magnetic resonance imaging with an ultra-narrow optical transition

We demonstrate optical magnetic resonance imaging (OMRI) of a Bose?CEinstein condensate of ytterbium atoms trapped in a one-dimensional (1D) optical lattice using an ultra-narrow optical transition ¹S₀?³P₂ (m=?2). We developed a vacuum chamber equipped with a thin glass cell, which provides high optical access and allows a compact design of magnetic coils. A line shape of a measured spectrum of the OMRI is well described by a spatial distribution of the atoms in a 1D optical lattice with the Thomas?CFermi approximation and an applied magnetic field gradient. The observed spectrum exhibits a periodic structure corresponding to the optical lattice periodicity.