用于钛宝石激光器自启动锁模的半导体可饱和吸收镜

报道国内首次制作的宽带低损耗半导体可饱和吸收镜（SESAM）。该反射镜已经成功用于钛宝石飞秒脉冲激光器的自启动锁模运转。     

半导体可饱和吸收镜启动克尔透镜锁模机理的实验研究

对采用腔内新型宽带半导体可饱和吸收镜(SESAM)掺钛蓝宝石激光器中的启动克尔透镜锁摸(KLM)的机理进行了实验研究.讨论了SESAM在阻挡恢复过程中,启动锁模时间与其他因素的关系.获得了SESAM启动KLM过程较为完整的物理图像,并对其机理进行了分析和讨论.     

半导体可饱和吸收镜实现固体激光器皮秒锁模的机理研究

对半导体可饱和吸收镜(SESAM)实现固体激光器皮秒锁模的机理进行了研究。通过对染料锁模介质和SESAM的结构对比,对SESAM皮秒锁模机理提出了一个新的解释。其在锁模激光器中充当锁模器件时,不仅仅是一个吸收体,同时也是一个增益介质。当腔内增益和损耗保持平衡时实现稳定的连续锁模。     

Self-starting mode-locked femtosecond forsterite laser with a semiconductor saturable-absorber mirror

We report on a self-starting mode-locked femtosecond Cr:forsterite laser pumped by a diode-pumped Nd:YVO(4) laser. The mode locking is initiated by a semiconductor saturable-absorber mirror (SESAM). We also present the measured group delay of the forsterite crystal and the SESAM.     

Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL

Near-transform-limited subpicosecond pulses at 1.56 μm were generated from an optically pumped InP-based vertical-external-cavity surface-emitting laser (VECSEL) passively mode-locked at 2 GHz repetition rate with a fast InGaAsNSb/GaAs semiconductor saturable absorber mirror (SESAM). The SESAM microcavity resonance was adjusted via a selective etching of phase layers specifically designed to control the magnitude of both the modulation depth and the intracavity group delay dispersion of the SESAM. Using the same VECSEL chip, we observed that the mode-locked pulse duration could be reduced from several picoseconds to less than 1 ps with a detuned resonant SESAM.     

含负克尔效应半导体可饱和吸收镜的五镜腔飞秒钛宝石激光器的理论分析

基于半导体可饱和吸收镜(SESAM)的负克尔效应，对含SESAM的五镜腔进行了理论计算和分析.结果表明，由于SESAM的负克尔效应，与没有SESAM的相比，锁模激光器的稳区在上稳区的内边缘有明显扩展，这使得激光器锁模启动的工作点更加靠近直流运转时的稳区边缘，从而获得更大的非线性因子.这说明SESAM的可饱和吸收机理具有锁模自启动效应外，其负克尔效应也有助于锁模的自启动. 关键词： 半导体可饱和吸收镜 负克尔效应 五镜腔     

Dielectric coatings for optimized low-loss saturable absorbers for high-power ultrafast laser

With the development of high power ultrafast laser passively mode-locked by a semiconductor saturable absorber mirror （SESAM）, the damage threshold and degeneration mechanism of the SESAM become more and more important. One way to reduce the maximum electric field inside the active part of the SESAM is the use of a dielectric coating on the top of the semiconductor structure. With Presnel formula, optical transfer matrix, and optical thin film theory, the electric field distribution and reflectance spectrum can be simulated. We introduce the design principles of SESAM including the dependence of reflectance spectrum on dielectric function of absorber, and investigate the dependences of the electric field distribution, modulation depth, reflectance spectrum, and the relative value of incident light power at the top quantum well of SESAM on the number of SiO2/Ta2O5 layers.     

Semiconductor saturable absorber mirror structures with low saturation fluence

We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical SESAM devices. Design considerations and characterization data are presented. These devices are particularly suited for passively mode-locked lasers with ultra-high repetition rates.     

Fluoride semiconductor saturable-absorber mirror for ultrashort pulse generation

We demonstrate what is to our knowledge the first ultrabroadband monolithically grown AlGaAs/CaF(2) semiconductor saturable-absorber mirror (SESAM) that covers nearly the entire gain spectrum of a Ti:sapphire laser. A large high-reflectivity bandwidth of more than 300 nm is provided by a device consisting of only six material layers. This fluoride SESAM had a modulation depth of 2.2%, a fast recovery time constant of less than 150 fs, and a slow recovery time constant of 1.2 ps. Using this SESAM inside a Ti:sapphire laser produced self-starting sub-10-femtosecond pulses.     

A diode-pumped, self-starting, all-solid-state self-mode-locked Cr:LiSGAF laser

In this paper, a self-starting, diode-pumped self-mode-locked Cr:LiSGAF laser, which produced a stable pulse train of 45 fs duration with about 20 mW-average power at the repeated rate of 90 MHz, was presented. Self-mode-locked operation can be obtained whether there is the semiconductor saturable absorber mirror (SESAM) in the Cr:LiSGAF laser cavity or not, and with the SESAM in the cavity, the self-mode-locked operation could self-start. The shortest pulses, as short as 38 fs, which were not very stable, were obtain with the SESAM in the cavity.     

Broadband semiconductor saturable-absorber mirror for a self-starting mode-locked Cr:forsterite laser

We report a low-loss broadband semiconductor saturable-absorber mirror (SESAM) that uses gold film as the reflector. A semiconductor- SiO(2) double-layer stack enhances the reflectivity of the gold film. This low-loss SESAM was used in a mode-locked Cr:forsterite laser to produce self-starting 20-fs-scale laser pulses at 1.3 microm . The structure can be applied to SESAM's for other wavelengths.     

用腔内半导体可饱和吸收镜钛宝石激光器中自锁模状态的实验研究

用可饱和吸收体镜(SESAM)的掺钛蓝宝石激光器能够稳定运转在三种不同的锁模状态,即可饱和吸收体被动锁模、孤子锁模加被动锁模和KLM锁模.分析了三种自锁模的机理和SESAM的作用.对SESAM实现KLM锁模的自启动机制进行了实验观察和讨论.从该激光器的KLM锁模状态,获得了小于18飞秒的锁模脉冲序列. 关键词： 半导体可饱和吸收镜 自锁模 钛宝石激光器     

In situ characterization of semiconductor saturable absorber mirrors in an operating Yb:KGW mode-locked laser

We report in situ characterization of a semiconductor saturable absorber mirror (SESAM) in an operating Yb:KGW mode-locked laser. The technique may be described as a pump-probe experiment in which the intracavity beam acts as a pump beam while the output of the same laser is used as a test beam for the SESAM reflectivity. At zero delay, the probe pulse overlaps in time with the subsequent intracavity pulse. The method is an alternative to standard pump-probe measurements in situations where the intracavity parameters such as energy fluence onto the SESAM, pulse length, and center wavelength cannot be achieved simultaneously with available lasers.     

Passively Q-Switched Nd：KLuW Laser with Semiconductor Saturable Absorber

We demonstrate a passively Q-switched Nd：KLu W laser with a semiconductor sat urable absorber mirror （SESAM） at wavelength 1070 nm. At a pump power of 1.3 W, the pulse width is measured to be about 17ns with repetition rate of lOkHz and with the average output power of 260roW. To our knowledge, this is the first demonstration of Nd：KLuW used for passively Q-switched laser with an SESAM.     

Dynamic process of self-started self-mode-locked Ti:sapphire laser with a semiconductor saturable absorber mirror

Dynamic process of self-started self-mode-locked Ti : sapphire laser with a semiconductor saturable absorber mirror (SESAM) was investigated and two mode-locking starting processes were found in which one is fast and the other is slow. In the fast starting process, a mode-locking build-up time of about 400 μs was needed during which pure passive mode-locking process was caused by the SESAM and Kerr-lens mode-locking process arose from the nonlinearity of the Ti : sapphire gain medium. In the slow starting process, a build-up time of about several minutes was found in which temperature effect of the SESAM dominates the dynamic process.     

Ultrafast Nonlinear Optical Properties of a Graphene Saturable Mirror in the 2 μm Wavelength Region

Mid‐infrared ultrafast lasers have emerged as a promising platform for both science and industry because of their inherent high raw power and eye‐safe spectrum. 2D nanostructures such as graphene have emerged as promising photonic materials for laser mode‐locking to generate ultrashort pulses. However, there are still many unanswered questions about graphene's key advantages to be practical devices, especially over the matured semiconductor saturable absorber mirror (SESAM). In this work, we conducted systematic comparisons on the nonlinear optical properties of graphene and that of a commercial SESAM at 2 μm wavelength. Our results showed that graphene has significant advantages over the commercial SESAM, exhibiting ∼28% less absorptive cross‐section ratio of excited‐state to ground‐state and ∼50 times faster relaxation time. This implies that graphene can be exploited as a better mode‐locker than the current commercial SESAM for high power, high repetition rate and ultrafast mid‐infrared laser sources.     

High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror

A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO? laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively.     

Optical characteristics of semiconductor saturable absorber mirrors investigated by the reflection Z-scan technique

Recently, the semiconductor saturable absorber mirror (SESAM) has become a key component of passive mode-locked solid-state lasers. Here we present a simple method based on the reflection Z-scan technique to measure the key optical parameters of SESAM such as saturation fluence and modulation depth. The experimental results demonstrate that our method is able to perform with a high accuracy of 10⁻⁴ and a dynamic range of over four orders of magnitude.     

Switchable dual-wavelength passively mode-locked fiber ring laser using SESAM and cascaded fiber Bragg gratings

We propose and demonstrate an efficient and simple wavelength switchable dual-wavelength passively mode-locked fiber ring laser based on a semiconductor saturable absorber mirror (SESAM) and a cascaded sequence of fiber Bragg gratings (FBGs). The efficient self-starting mode-locked operation was realized with a SESAM. Dual-wavelength pulses with a wavelength spacing of 12.49 nm were obtained which was determined by the reflection peaks of the FBGs used in the experiment. In addition, by rotating the polarization controllers (PCs), the switchable dual-wavelength operation was simply achieved via exploiting wavelength-dependent loss mechanism.     

半导体可饱和吸收镜锁模的钒酸盐混晶Nd:Gd0.1Y0.9VO4激光器

采用Nd∶Gd_0.1Y_0.9VO₄晶体作为增益介质和Z形腔结构,分析比较了腔内加入自行设计的镀和不镀高反膜的半导体可饱和吸收镜（SESAM）对激光锁模的影响.在腔内加入镀膜SESAM后,激光锁模阈值由1.69W下降为1.45W,并且锁模更稳定.在2W抽运功率下,在1064nm中心波长处获得了双端250mW的连续锁模输出,光光转换效率为12.5%,重复频率为142.25MHz. 关键词： 0.1Y_0.9VO₄激光器')" href="#">Nd∶Gd_0.1Y_0.9VO₄激光器 半导体可饱和吸收镜 连续锁模