甲烷分子电子碰撞电离和解离的实验研究

本文利用反应显微成像技术(reaction microscope)研究了54 eV电子入射甲烷分子导致的电离解离过程,详细分析了电离解离产生的CH⁺₂,CH⁺,C⁺离子碎片的动能分布情况.实验结果表明,该入射能量下产生CH⁺₂,CH⁺,C⁺离子碎片主要贡献来自2a₁内价轨道电子的直接电离过程产生的离子态(2a< 关键词： 反应显微成像谱仪 电离解离 能量沉积 动能分布     

Ar/CH4等离子体射流发射光谱诊断研究

为了更加深入的研究大气压条件下Ar/CH₄等离子体射流的放电机理和其内部电子的状态,通过自主设计的针-环式介质阻挡放电结构,在放电频率10 kHz、一个大气压条件下产生了稳定的Ar/CH₄等离子体射流,并利用发射光谱法对其进行了诊断研究。对大气条件下Ar/CH₄等离子体射流的放电现象及内部活性粒子种类进行诊断分析,重点研究了不同氩气甲烷体积流量比、不同峰值电压对大气压Ar/CH₄等离子体射流电子激发温度、电子密度以及CH基团活性粒子浓度的影响规律。结果表明,大气压条件下Ar/CH₄等离子体射流呈淡蓝色,在射流边缘可观察到丝状毛刺并伴有刺耳的电离声同时发现射流尖端的形态波动较大;通过发射光谱可以发现Ar/CH₄等离子体射流中的主要活性粒子为CH基团,C,CⅡ,CⅢ,CⅣ,ArⅠ和ArⅡ,其中含碳粒子的谱线主要集中在400~600 nm之间,ArⅠ和ArⅡ的谱线分布在680~800 nm之间;可以发现CH基团的浓度随峰值电压的增大而增大,但CH基团浓度随Ar/CH₄体积流量比的增大而减小,同时Ar/CH₄等离子体射流中C原子的浓度随之增加,这表明氩气甲烷体积流量比的增大加速了Ar/CH₄等离子体射流中C-H的断裂,因此可以发现增大峰值电压与氩气甲烷体积流量比均可明显的加快甲烷分子的脱氢效率,但增大氩气甲烷体积流量比的脱氢效果更加明显。通过多谱线斜率法选取4条ArⅠ谱线计算了不同工况下的电子激发温度,求得大气压Ar/CH₄等离子体射流的电子激发温度在6 000~12 000 K之间,且随峰值电压与氩气甲烷体积流量比的增大均呈现上升的趋势;依据Stark展宽机理对Ar/CH₄等离子体射流的电子密度进行了计算,电子密度的数量级可达1017 cm-3,且增大峰值电压与氩气甲烷体积流量比均可有效的提高射流中的电子密度。这些参数的探索对大气压等离子体射流的研讨具有重大意义。     

H+2，H+3团簇离子在沟道条件下的背散射 质子产额测量

采用卢瑟福背散射方法，测得了每质子能量为650 keV的H⁺₂，H+₃团簇离子在Si晶体<100>和<110>沟道条件下的质子背散射能谱.结果发现，由于H⁺₂，H⁺₃团簇在晶体中的库仑爆炸和团簇效应，H⁺₂的背散射质子产额大于H ⁺的背散射产额，而H^{+< 关键词： 团簇 沟道效应 库仑爆炸 背散射}     

H+5团簇离子及其中性团簇产物H3和H4

报道了H⁺₅的实验结果.分析讨论了H⁺₅的 形成和分解途径.根据理论分析，以稳定的H⁺₃为核心与一个或多个氢分子结合可能形成稳定的H^{+_n氢团簇离子.另一方面，在高频离子源中, 有发生H+₃与H₂反应的条件.实 验中，从高频离子源引出的离子束被静电加速器加速，然后用9 关键词： +}₅团簇离子')" href="#">H⁺₅团簇离子 3中性团簇')" href="#">H₃中性团簇 4中性团簇')" href="#">H_{4中性团簇}     

介质阻挡均匀大气压氮气放电特性研究

基于一维流体力学模型，对介质阻挡均匀大气压氮气放电特性进行了数值计算研究.模型中考虑了氮气中主要的电离、激发过程，所包含的粒子种类为e，N₂，N⁺₂，N⁺₄，N₂(a¹∑^-_u)，N₂(A³∑⁺_u).模拟结果显示，氮中的放电具有低气压下汤生放电的特性.放电电流幅度较小，放电过程中气体电压变化缓慢，电子密度远低于离子密度，而且最大值出现在阳极，电子不能在放电间隙中被俘获，不存在中性等离子体区，气体中的电场趋于线性变化.亚稳态N₂(A³∑⁺_u)和N₂(a¹∑⁺_u)在整个放电空间都具有非常高的密度，比电子密度高三个量级以上，亚稳态密度的最大值出现在阳极，这样的分布决定了放电的空间结构.放电所需的种子电子主要由亚稳态之间潘宁电离提供，这种机理使放电的电离水平较低，导致氮气中的放电只能是汤生放电.随着放电参数的变化，多电流峰放电也可在氮气中获得. 关键词： 大气压均匀放电 介质阻挡放电 数值模拟 氮气     

MeV氢微团簇离子与固体介质的电荷交换

利用静电加速器提供的0.6—1.8MeV的H⁺，H⁺₂，H⁺₃离子，轰击不同厚度的碳膜，分别测量这些离子通过碳膜后各种产物的产额. 得到了不同能量的H⁺通过碳膜后中性原子H和负离子H^-的产额随入射质子速度的变化关系；分别得到能量为1.2MeV,1.8MeV的H⁺₂，H⁺₃团簇离子通过不同厚度碳膜的透射产额及其与团簇离子在碳膜中驻留时间的关系；对结果进行了理论分析与讨论. 关键词： 团簇离子 电荷交换     

(CH3I)n(n=1,2,3,4)的同步辐射光电离研究

用VUV同步辐射辐照在连续的超声射流冷却束中产生的（CH₃I)_n（n=1,2，3，4）团簇分子，通过测量其光电离及解离电离产生的各种离子的光电离效率（PIE）曲线，获得了（CH₃I)_n⁺（n=1，2，3，4）的绝热电离势及各种碎片离子的出现势，估算了有关分子的键能．在CH₃I⁺的PIＥ曲线上观察到CH₃I分子的自电离结构，并对其进行了标识，归属为收敛于CH₃I⁺（²E_1/2）态的4组Rydberg系，即ns，npσ，npπ和nd． 关键词：     

N2微空心阴极放电特性及其阴极溅射的PIC/MC模拟

采用两维PIC/MCC模型模拟了氮气微空心阴极放电以及轰击离子 (N₂⁺,N⁺) 的钛阴极溅射. 主要计算了氮气微空心阴极放电离子 (N₂⁺,N⁺) 及溅射原子Ti的行为分布, 并研究了溅射Ti 原子的热化过程. 结果表明: 在模拟条件下, 空心阴极效应是负辉区叠加的电子震荡; 在对应条件下, 微空心较传统空心放电两种离子 (N₂⁺,N⁺) 密度均大两个量级, 两种离子的平均能量的分布及大小几乎相同; 在放电空间N⁺的密度约为N₂⁺的1/6, 最大能量约大2倍; 在不同参数 (P, T, V)下, 轰击阴极内表面的氮离子(N₂⁺,N⁺)的密度近似均匀, 其平均能量几乎相等; 从阴极溅射出的Ti原子的初始平均能量约6.8 eV, 离开阴极约0.15 mm处几乎完全被热化. 模拟结果为N₂微空心阴极放电等离子体特性的认识提供了参考依据. 关键词： 微空心阴极放电 PIC/MC模拟 2等离子体')" href="#">N₂等离子体     

双离子(40Ar+, C2H+6)辐照合成金刚石纳米晶颗粒

用双离子(⁴⁰Ar⁺，C₂H⁺₆)辐照实验完成了从多壁碳纳米管向金刚石纳米晶颗粒的转变.对转变机理进行了初步探讨.这一探索有望能成为一种金刚石纳米晶合成的新途径.由此可知，多重荷能离子辐照用于其他材料纳米结构的制备也不是凭空设想. 关键词： 金刚石纳米晶 离子辐照 透射电子显微镜     

工作压强对射频辉光放电H2/C4H8等离子状态的影响

利用辉光放电技术采用等离子体质谱诊断的方法研究了不同工作 压强下H₂/C₄H₈混合气体等离子体中 主要正离子成分及其能量的变化规律, 并分析了压强对H₂/C₄H₈混合气体的离解机理以及主要正离子形成过程的影响. 结果表明: 随着工作压强的增加, 碳氢碎片离子的浓度和能量均逐渐减小. 当工作压强为5 Pa时, H₂/C₄H₈混合气体等离子体中C₃H₅⁺相对浓度最大; 压强为10 Pa时, C₃H₃⁺相对浓度最大; 压强为15, 20 Pa时, C₂H₅⁺相对浓度最大; 压强为25 Pa时, C₄H₉⁺相对浓度最大. 对H₂/C₄H₈等离子体中的主要组分及其能量分布所进行的定性分析, 将为H₂/C₄H₈混合气体辉光放电聚合物涂层的工艺参数优化提供参考技术基础. 关键词： 辉光放电技术 等离子体质谱诊断 工作压强     

Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO

CH₄/H₂-based discharges are attractive for dry etching of single crystal ZnO because of their non-corrosive nature. We show that substitution of C₂H₆ for CH₄ increases the ZnO etch rate by approximately a factor of 2 both with and without any inert gas additive. The C₂H₆/H₂/Ar mixture provides a strong enhancement over pure Ar sputtering, in sharp contrast to the case of CH₄/H₂/Ar. The threshold ion energy for initiating etching is 42.4 eV for C₂H₆/H₂/Ar and 59.8 eV for CH₄/H₂/Ar. The etched surface morphologies were smooth, independent of the chemistry and the Zn/O ratio in the near-surface region was unchanged within experimental error after etching with both chemistries. The plasma etching improved the band-edge photoluminescence intensity and suppressed the deep level emission from the bulk ZnO under our conditions, due possibly to removal of surface contamination layer.     

Elucidating surface properties of dry-etched ZnO using H2/CH4 and H2/CH4/Ar plasma

This paper reports a study of reactive ion etching (RIE) of n-ZnO in H₂/CH₄ and H₂/CH₄/Ar gas mixtures. Variables in the experiment were gas flow ratios, radio-frequency (rf) plasma power, and total pressure. Structural and electrical parameters of the etched surfaces and films were determined. Both the highest surface roughness and highest etching rate of ZnO films were obtained with a maximum rf power of 300 W, but at different gas flow ratios and working pressures. These results were expected because increasing the rf power increased the bond-breaking efficiency of ZnO. The highest degree of surface roughness was a result of pure physical etching by H₂ gas without mixed CH₄ gas. The highest etching rate was obtained from physical etching of H₂/Ar species associated with chemical reaction of CH₄ species. Additionally, the H₂/CH₄/Ar plasma treatment drastically decreased the specific contact and sheet resistance of the ZnO films. These results indicated that etching the ZnO film had roughened the surface and reduced its resistivity to ohmic contact, supporting the application of a roughened transparent contact layer (TCL) in light-emitting diodes (LEDs).     

Theoretical analysis of ion kinetic energies and DLC film deposition by CH4＋ Ar （He） dielectric barrier discharge plasmas

The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH4 ＋ Ar（He） dielectric barrier discharge plasma at a fixed total gas pressure and various Ar （He） concentrations are calculated. It is found that with increasing Ar （He） concentration in CH4 ＋ Ar （He） from 20% to 83%, the CH4＋ kinetic energy increases from 69.6 （43.9） to 92.1 （128.5）eV, while the Ar＋ （He＋） kinetic energy decreases from 97 （145.2） to 78.8 （75.5）eV. The increase of CH4＋ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH4 ＋ Ar （He） dielectric barrier discharge without bias voltage over substrates.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Direct-inelastic and trapping-desorption scattering of N2 and CH4 from Pt(111)

Angle and velocity distributions for supersonic chopped beams of N₂ and CH₄ scattered from clean close-packed Pt(111) surfaces are reported. For specular direct-inelastic scattering N₂ and CH₄ velocity distributions can be characterized by empirical relationships used for Ar scattering. For instance, for specular scattering the following relation is found for Ar, N₂ and CH₄: 〈KE_f〉 = A(KE_i) + B(2kT_s), where 〈KE_f〉 is the average final kinetic energy, KE_i is the incident kinetic energy and T_s is the surface temperature. The beam and surface temperature independent coefficients A and B are, respectively: Ar 0.87, 0.17; N₂ 0.79, 0.19 and CH₄ 0.84, 0.25. Unlike Ar, N₂ desorbs from Pt with a Maxwell-Boltzmann velocity distribution near the surface temperature. Qualitatively the trapping probabilities for these molecules on Pt(111) are ordered: Xe > N₂ > CH₄> Ar.     

Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries

The effect of inert gas additive (He, Ar, Xe) to CH₄/H₂ discharges for dry etching of single crystal ZnO was examined. The etch rates were higher with Ar or Xe addition, compared to He but in all cases the CH₄/H₂-based mixtures showed little or no enhancement over pure physical sputtering under the same conditions. The etched surface morphologies were smooth, independent of the inert gas additive species and the Zn/O ratio in the near-surface region decreases as the mass number of the additive species increases, suggesting preferential sputtering of O. The plasma etching improved the band-edge photoluminescence intensity from the ZnO for the range of ion energies used here (290-355 eV), due possibly to removal of surface contamination layer.     

Electron impact ionization of Ar n , (H2O) n , Ar n (H2O) m clusters

Signals from ions forming in a supersonic molecular beam consisting of an argon-water vapor mixture are measured as functions of the exciting electron energy in the range to 120 eV. The thresholds of electron impact excitation of (H₂O) _{n − 1}H⁺ and Ar _n (H₂O _m ⁺ clusters are determined for the first time. It is found that the proton-hydroxyl group binding energy decreases considerably both in the case of water molecule clustering and when mixed Ar _n (H₂O) _m clusters arise.     

Low energy sputtering of neutral Cu2 molecules

The ratios of relative yields of neutral sputtered Cu₂ molecules to neutral sputtered Cu atoms were found to be linearly proportional to the sputtering yield of Cu, from a Cu target under bombardment by Ar⁺ ions (energy 50–90 eV), as determined by secondary neutral mass spectrometry.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.