Frequency shift of the magnetic resonance in 5<Emphasis Type="Italic">s</Emphasis><Superscript>2</Superscript><Emphasis Type="Italic">S</Emphasis><Subscript>1/2</Subscript> rubidium atoms due to spin-exchange collisions with optically oriented cesium atoms

For the case of cesium atoms optically oriented in a mixture of cesium and rubidium vapors, the temperature dependence of the frequency shift of a magnetic resonance excited in a set of Zeeman sublevels for two hyperfine states of ⁸⁷Rb 5s ² S _1/2 atoms. It is shown that, in a weak magnetic field of about 2 × 10^?6 T, this shift is determined by the spin-exchange interaction of rubidium atoms with optically oriented ¹³³Cs atoms.     

Stark interaction for excited states in alkali atoms,investigated by laser spectroscopy

The scalar polarizability constantα ₀ for excitedS- andD-states in rubidium and cesium was measured utilizing a two-step excitation scheme. An rf lamp and a single-mode dye laser were used to excite the atoms in a collimated atomic beam. Values ofα ₀ were determined for the 9–10² S _1/2 and 7–8² D _3/2 states of rubidium and for the 10–13² S _1/2, 9–10² D _3/2 and 9–11² D _5/2 states of cesium. Further, the isotope shift was evaluated in the 5579 Å rubidium line. A review of experimental polarizability constants for rubidium and cesium is given, and the results are compared with theoretical values.     

Observation of the spin polarization of Cs atoms during optical orientation of metastable helium atoms in alkali-helium plasma

We are the first to experimentally observe a magnetic-resonance signal of 6² S _1/2 Cs atoms by absorption of light from a helium lamp that was used to optically orient metastable 2³ S ₁ He atoms. The amplitude of the cesium signal proved to be almost three orders of magnitude lower than the amplitude of the magnetic resonance of 2³ S ₁ He atoms. Particular features of the creation and observation of the collisional polarization of cesium under conditions of alkali-helium plasma have been discussed.     

Anomalous dependence of the magnetic resonance signal of cesium atoms in the afterglow in an N<Subscript>2</Subscript>-Ar mixture

The investigation of spin-exchange collisions between optically oriented cesium atoms in the ground ² S _1/2 state and nitrogen atoms in the ground ⁴ S _3/2 state reveals an anomalous behavior of the magnetic resonance signal of cesium atoms in the afterglow in an N₂-Ar mixture, namely, the magnetic resonance signal is slowly enhanced during the time interval between the high-frequency pulses exciting a discharge in the absorption cell. It is found that such a behavior of the magnetic resonance signal is explained by a slow change in the concentration of nitrogen atoms in the absorption cell, which affects the magnetic resonance of cesium atoms via efficient spin exchange.     

Parity violation in helium and cesium and the effect of electron-electron interaction

We investigate the parity violating effect in helium and cesium atoms due to the exchange of a Z⁰-meson between atomic electrons. It is found that this effect is negligible for both atoms in comparison with the contribution from the electron-nucleus interactions, if we take the neutral-current coupling between electrons as predicted by the SU (2) × U (1) theory and sin²θ_W ≈ 0.3.     

Effect of the pump absorption on generation of infrared stimulated electronic Raman scattering in alkali-metal vapors

The main properties of infrared stimulated electronic Raman scattering (SERS) at the 6² S _1/2-7² S _{1/2, 3/2} transitions in cesium atoms are studied theoretically and experimentally as functions of the atomic concentration, which was varied from 10¹¹ to 10¹⁶ cm^?3. It is found that the efficiency of generation of Stokes radiation strongly depends on one-photon absorption of the pump radiation tuned near frequencies of the 6² S _1/2-7² P _{1/2, 3/2} transitions. By using the equation for the density matrix, which describes the evolution of a three-level system, the theory of resonance excitation of IR radiation upon one-photon absorption at an adjacent transition is developed. The theory describes well the main features of IR SERS in alkali-metal vapors.     

Experimental determination of the rate constant for spin exchange in collisions of polarized metastable helium atoms with ground-state cesium atoms

The rate constant for spin exchange in a system consisting of a metastable helium atom and an alkali-metal atom is determined. An experiment on optical orientation of atoms established that the rate constant for spin exchange in a collision of a metastable 2³ S ₁ helium atom with a cesium atom in the 6² S _1/2 ground state equals (2.8±0.8)×10⁻⁹ cm³ s⁻¹. The rate constant for chemoionization of cesium atoms by metastable helium atoms was determined at the same time to be (1.0±0.3)×10⁹ cm³s⁻¹. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 145–148 (10 August 1997)     

Application of the light-shift effect to laser frequency stabilization with reference to a microwave frequency standard

A new method allowing laser frequency stabilization with reference to a microwave oscillator, independently of the laser intensity, is described. The method makes use of the dependence of the ground-state hfs transition frequency on the optical radiation frequency in alkali atoms irradiated by quasi-resonant light. Preliminary experimental investigations are reported in the case of a cw GaAs diode laser tuned to the D₂ absorption line in a cesium gas cell. The absolute laser frequency exhibited variations of 1.4 MHz r.m.s. around an average value determined to within 2 parts in 10¹⁰ for a period of 5 minutes. The possibility of defining a cesium beam, reference wavelength connected with the time standard is discussed.     

Deexcitation of Cd 53P1 atoms in collisions with ground state atoms and molecules

Collisions of excited Cd 5³P₁ atoms were investigated using atomic fluorescence spectroscopy. Cadmium vapor, together with a quenching gas, was irradiated in a quartz fluorescence vessel with Cd 3261 Å resonance radiation and the intensity of the resulting resonance fluorescence was monitored in relation to the gas pressures. The experiments yielded the following cross sections Q₁₀ (in A²) for collisional transfer 5³P₁→5³P₀: CdAr=2×10^?3, CdN₂=8.0, CdH₂=7.0, CdCO=15.6. The cross sections Q for collisional deexcitation to the ground state (quenching) in A² are CdN₂ = 2.6×10^?2, CdH₂ = 11.0, CdCO = 3.4, CdCO₂ = 26.     

Core-level photoemission spectra from Cs monolayers on Si(1 1 1)2 × 1

Band shape in the Cs 4d core level of cesium atom monolayers adsorbed on Si(1 1 1)2 × 1 has been studied by photoemission spectroscopy using synchrotron radiation. Asymmetry appeared on the low kinetic energy side at high coverages of cesium atoms. This is caused by the energy loss due to the overlayer plasmon in the cesium atom monolayer of photoemitted Cs 4d electrons.     

Transport cross sections for charged particle scattering in (dense-) cesium plasma; electrical conductivity

Transport cross sections for the electron-ion and electron-electron scattering in (dense) cesium plasmas is determined with the partial wave method. The scattering phase shifts δ_l(k) are calculated numerically by means of the usual Numerov method and the advantageous amplitude — phase method for energies E = 10^-4··· 5 ryd and for Debye screening lengths R_D = (10···10³)a₀. Besides the usual Debye potential, also a Thomas-Fermi potential is applied for the cesium electron-ion interaction. The resulting transport cross sections are compared with the Born and quasi-classical approximations. Furthermore, the electrical conductivity of fully ionized cesium plasmas is determined and compared with respective Spitzer results.     

Determination of the negative hydrogen ion concentration in a cesium-hydrogen discharge

The concentration N _H ⁻ of negative hydrogen ions in a low-voltage cesium-hydrogen discharge plasma N _H ⁻ is determined from experiments with laser radiation absorption caused by the photodetachment of electrons from the H⁻ ions. The resolution of a setup measuring the relative absorption is ≥10⁻⁵ for a signal-to-noise ratio of ∼10⁻² or less. A heated-cathode diode is used to initiate the discharge at a voltage of U≤10 V and a current density of j≤5 A/cm² (hydrogen pressure p _{H 2} is equal to several torr, and the cesium concentration in the plasma N _Cs ⁽⁰⁾ ∼10¹⁴ cm⁻³). The absorption due to the photoionization of excited Cs atoms is shown to be negligible. The measured concentration N _H ⁻ of the H⁻ ions is 10¹²–10¹³ cm⁻³. Experimental results are consistent with the theory.     

Effect of deposition of samarium atoms on the electron-stimulated desorption of cesium and samarium atoms from the surface of tungsten coated by gold and cesium

It has been shown that deposition of Sm atoms on W(100) surface coated by several monolayers of gold and cesium affects noticeably the yield of Cs atoms in electron-stimulated desorption (ESD) from this surface. The measurements have been performed by the time-of-flight method with a surface-ionization detector. The paper reports on the first observation of ESD of Sm atoms from the tungsten surface coated by layers of gold and cesium. The ESD threshold for Sm atoms, E _e = 57 eV, coincides with that for Cs atoms and corresponds to the energy of the Au 5p _3/2 core level. The dependence of the ESD yield of Sm atoms on the bombarding electron energy E _e follows a resonance pattern in the form of a narrow peak located in the range 57 ≤ E _e ≤ 66 eV. Deposition of Sm atoms at room temperature (～300 K) reduces (by a factor of about two) the ESD yield of Cs atoms for 600 s, and deposition of Sm atoms at 160 K reduces the ESD of Cs atoms down to zero already for 270 s. This difference finds explanation in the study of the change the structure of the top layer of the (Au + Cs)/W surface coating undergoes under cooling of the surface from 300 to 160 K.     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Characterization of silicon doped with sodium upon high-voltage implantation

The depth distribution profiles of sodium atoms in silicon upon high-voltage implantation (ion energy, 300 keV; implantation dose, 5 × 10¹⁴ and 3 × 10¹⁵ cm ^?2) are investigated before and after annealing at temperatures in the range T _ann = 300–900°C (t _ann = 30 min). Ion implantation is performed with the use of a high-resistivity p-Si (ρ= 3–5 kΩ cm) grown by floating-zone melting. After implantation, the depth distribution profiles are characterized by an intense tail attributed to the incorporation of sodium atoms into channels upon their scattering from displaced silicon atoms. At an implantation dose of 3 × 10¹⁵ ions/cm², which is higher than the amorphization threshold of silicon, a segregation peak is observed on the left slope of the diffusion profile in the vicinity of the maximum after annealing at a temperature T _ann = 600°C. At an implantation dose of 5 × 10¹⁴ ions/cm², which is insufficient for silicon amorphization, no similar peak is observed. Annealing at a temperature T _ann = 700°C leads to a shift of the profile toward the surface of the sample. Annealing performed at temperatures T _ann ≥ 800°C results in a considerable loss of sodium atoms due to their diffusion toward the surface of the sample and subsequent evaporation. After annealing, only a small number of implanted atoms that are located far from the region of the most severe damages remain electrically active. It is demonstrated that, owing to the larger distance between the diffusion source and the surface of the sample, the superficial density of electrically active atoms in the diffusion layer upon high-voltage implantation of sodium ions is almost one order of magnitude higher than the corresponding density observed upon low-voltage implantation (50–70 keV). In this case, the volume concentration of donors near the surface of the sample increases by a factor of 5–10. The measured values of the effective diffusion parameters of sodium at annealing temperatures in the range T _ann = 525–900°C are as follows: D ₀ = 0.018 cm²/s and E _a = 1.29 eV/kT. These parameters are almost identical to those previously obtained in the case of low-voltage implantation.     

Steady State Fluorescence Studies of Wild Type Recombinant Cinnamoyl CoA Reductase (Ll-CCRH1) and its Active Site Mutants

Fluorescence quenching and time resolved fluorescence studies of wild type recombinant cinnamoyl CoA reductase (Ll-CCRH1), a multitryptophan protein from Leucaena leucocephala and 10 different active site mutants were carried out to investigate tryptophan environment. The enzyme showed highest affinity for feruloyl CoA (K _a ?=?3.72?×?10⁵ M^?1) over other CoA esters and cinnamaldehydes, as determined by fluorescence spectroscopy. Quenching of the fluorescence by acrylamide for wild type and active site mutants was collisional with almost 100 % of the tryptophan fluorescence accessible under native condition and remained same after denaturation of protein with 6 M GdnHCl. In wild type Ll-CCRH1, the extent of quenching achieved with iodide (f _a?=?1.0) was significantly higher than cesium ions (f _a?=?0.33) suggesting more density of positive charge around surface of trp conformers under native conditions. Denaturation of wild type protein with 6 M GdnHCl led to significant increase in the quenching with cesium (f _a?=?0.54), whereas quenching with iodide ion was decreased (f _a?=?0.78), indicating reorientation of charge density around trp from positive to negative and heterogeneity in trp environment. The Stern-Volmer plots for wild type and mutants Ll-CCRH1 under native and denatured conditions, with cesium ion yielded biphasic quenching profiles. The extent of quenching for cesium and iodide ions under native and denatured conditions observed in active site mutants was significantly different from wild type Ll-CCRH1 under the same conditions. Thus, single substitution type mutations of active site residues showed heterogeneity in tryptophan microenvironment and differential degree of conformation of protein under native or denatured conditions.     

On spin relaxation of optically pumped cesium vapour

〈S_Z〉 relaxation of cesium is measured in the presence of foreign gases, using the detecting beam method. From the results obtained in the low-pressure regions calculations for the diffusion coefficient, D₀, for cesium in Ne and Ar yield values of 0.113 cm²/sec and 0.145 cm²/sec at 760 torr and 0°C, respectively. A comparison of our D₀ values with those published previously is made.     

Die Diffusionskoeffizienten und mittleren freien Weglängen der geladenen und neutralen Radon-Folgeprodukte in Luft

The knowledge of the diffusion coefficients of radioactive atoms and ions in air is very important in a number of investigations on and computations of the attachment of radon decay products to aerosol particles. In this work measurements of the diffusion coefficients of neutral and charged²¹²Pb atoms are reported. The values found areD ₀=(7.6±0.4)·10^?2cm²s^?1 for neutral atomsD=(5.0±0.3)·10^?2cm²s^?1 for charged atoms The used method of measurement allowed to determine these constants 1–5 seconds after the formation aged²¹²Pb atoms, so that a “cluster” formation was improbable. The mean free path for neutral (λ₀=(4.9±0.3)·10^?6cm) and charged (λ=(3.2±0.2)· 10^?6cm) lead 212 atoms in air were computed from the measured diffusion coefficients. All obtained results were compared with values, calculated from theory.     

Optical pumping of cesium atoms with second resonance light

We report the first successful optical pumping of cesium atoms to a state of high spin polarization with a CW dye laser tuned to the D₁ second resonance line (4593 Å) of the cesium atom. Results of spin polarization versus laser power measurements for cells containing high-density cesium vapors (10¹³–10¹⁵ cm^-3) plus mixtures of nitrogen (10–200 torr) and helium (≈1 atmosphere) gases are presented. These experiments have revealed unexpected limits to the spin polarization of dense alkali vapors.     

Vibrational properties of the adsorbed monolayer on face-centered cubic crystals

Calculations of mean-square displacements 〈u²〉 of the atoms in adsorbed monolayers on fcc crystals are presented and compared with LEED experimental results. This text is restricted to the case of a C(2 × 2) adsorbed layer on a (100) surface [experimental case of Ni(100) with adsorbed sulfur, sodium, cesium or oxygen]. 〈u²〉's perpendicular to and parallel to a (100) surface are calculated for the adsorbed atoms and the atoms of the first surface layer of the crystal. The values obtained are compared with those for a clean (100) surface and the volume of the crystal. Every possibility for force constants between adsorbate and substrate atoms is examined. It is shown that the measurement of 〈u²〉 perpendicular to the (100) surface yields the adsorbate-substrate force constants and that 〈u²〉 parallel to the (100) surface yields the adsorbate-adsorbate force constants.