RuO2/Co3O4 thin films prepared by spray pyrolysis technique for supercapacitors

RuO₂/Co₃O₄ thin films with different RuO₂ content were successfully prepared on fluorine-doped tin oxide coated glass plate substrates by spray pyrolysis method, and their capacitive behavior was investigated. Electrochemical property was performed by cyclic voltammetry, constant current charge/discharge, and electrochemical impedance spectra. The capacitive performance of RuO₂/Co₃O₄ thin films with different RuO₂ content corresponded to a contribution from a main pseudocapacitance and an additional electric double-layer capacitance. The specific capacitance of pure Co₃O₄, 15.5%, 35.6%, and 62.3% RuO₂ composites at the current density of 0.2 A g⁻¹ were 394 ± 8, 453 ± 9, 520 ± 10, and 690 ± 14 F g⁻¹, respectively; 62.3% RuO₂ composite presented the highest specific capacitance value at various current densities, whereas 35.6% RuO₂ composite exhibited not only the largest specific capacitance contribution from RuO₂ (C _sp ^RuO2) at the current density of 0.5, 1.0, 1.5, and 2.0 A g⁻¹ but also the highest specific capacitance retention ratio (46.3 ± 2.8%) at the current density ranging from 0.2 to 2.0 A g⁻¹. Electrochemical impedance spectra showed that the contact resistance dropped gradually with the decrease of RuO₂ content, and the charge-transfer resistance (R _ct) increased gradually with the decrease of RuO₂ content.     

Studies on nanocrystalline cadmium sulphide (CdS) thin films deposited by spray pyrolysis

Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. CdS in the form of thin film is prepared at different substrate temperatures by a simple and inexpensive chemical spray pyrolysis technique. The as-deposited thin films have been characterized by XRD, SEM, EDAX and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of substrate temperature. SEM studies reveal that the grains are uniform with uneven spherically shaped, distributed over the entire surface of the substrates. Compositional analysis reveals that the material formed is stoichiometric at the optimized substrate temperature. The optical band gap energy is found to be 2.44 eV with direct allowed band-to-band transition for film deposited at 300°C. The electrical resistivity measurement shows that the films are semiconducting with a minimum resistivity for film deposited at 300°C. The thermoelectric power measurement shows that films exhibit n-type of conductivity.     

Kinetics of precipitation and growth of thin indium(III) sulfide films

Thin films of indium(III) sulfide have been prepared by chemical precipitation from aqueous solutions containing indium(III) nitrate, thioacetamide, tartaric acid, and hydroxylamine hydrochloride at 333–368 K. Kinetics of In₂S₃ precipitation and the films growth under conditions of spontaneous formation of the solid phase in the solution has been studied. Formal rate law of indium(III) sulfide formation accounting for the partial orders of In₂S₃ precipitation with respect to the system components and the process activation energy has been derived. The effects of the reaction mixture composition, temperature, and the synthesis duration of In2S3 films growth have been studied.     

PVP-functionalized nanometre scale metal oxide coatings for cathode materials: successful application to LiMn2O4 spinel nanoparticles

PVP functionalized metal oxide coatings on spinel nanoparticles demonstrated significantly improved rate characteristics under extensive cycling at 65 degrees C and exhibited over 100% improved capacity retention compared to the bare counterpart.     

Fe-doped SnO2 transparent semi-conducting thin films deposited by spray pyrolysis technique: Thermoelectric and p-type conductivity properties

In this paper, we report structural, electrical, optical, and especially thermoelectrical characterization of iron (Fe) doped tin oxide films, which have been deposited by spray pyrolysis technique. The doping level has changed from 0 to 10 wt% in solution ([Fe]/[Sn] = 0–40 at% in solution). The thermoelectric response versus temperature difference has exhibited a nonlinear behavior, and the Seebeck coefficient has been calculated from its slope in temperature range of 300–500 K. The Hall effect and thermoelectric measurements have shown p-type conductivity in SnO₂:Fe films with [Fe]/[Sn] ≥ 7.8 at%. In doping levels lower than 7.8 at%, SnO₂:Fe films have been n-type with a negative thermoelectric coefficient. The Seebeck coefficient for SnO₂:Fe films with 7.8 at% doping level has been obtained to be as high as +1850 μV/K. The analysis of as-deposited samples with thicknesses ～350 nm by X-ray diffraction (XRD) and scanning electron microscopy (SEM) has shown polycrystalline structure with clear characteristic peak of SnO₂ cassiterite phase in all films. The optical transparency (T%) of SnO₂:Fe films in visible spectra decreases from 90% to 75% and electrical resistivity (ρ) increases from 1.2 × 10^?2 to 3 × 10³ Ω cm for Fe-doping in the range 0–40 at%.     

The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

The effect of cobalt (Co) concentration on structural,optical, and electrochemical properties of tungsten oxide (WO3) thin films deposited by spray pyrolysis

Journal of Solid State Electrochemistry - In this study, WO3:Co thin films with different percentages of cobalt concentration were deposited by spray pyrolysis on glass substrates at T = 400...     

Co-continuous porosity formation on thin oxide films: transition metal oxides (TiO2 and Nb2O5) versus SiO2

In this study the role of different types of metal alkoxides, as well as the roles of acetyl acetone (ACAC) and polyethylene glycol (PEG) on co-continuous porosity formation in thin oxide films (TiO₂, Nb₂O₅, SiO₂ and TiO₂–SiO₂ mixed oxide) is investigated. The films are produced by the spin coating method and the resulting morphologies are characterized from the scanning electron microscope images of the surface and of the focused ion beam machined cross-sections. Results show that the porous, co-continuous morphology forms only in transition metal oxide films, TiO₂ and Nb₂O₅, and that it does not form in the semimetal SiO₂ film. The effect of interfacial activity of ACAC modified Ti- and Nb-alkoxides together with the effect of PEG reaction with the metal oxide oligomers are found to cause co-continuous porosity formation in TiO₂ and Nb₂O₅ films. Moreover, it appears that both of these effects are more pronounced during formation of Nb₂O₅ than TiO₂ films.     

Useful and accessible organometallic precursors for preparation of zinc sulfide and indium sulfide thin films via solution pyrolysis (printing) method

Polycrystalline β-zinc sulfide thin films were prepared by solution pyrolysis of an ethylzinc isopropylthiolate–zinc bis(dibutyldithiocarbamate) combined precursor (EtZnSiPr–Zn(S₂CNnBu₂)₂) in chloroform solution on glass or silicon(111) substrates at 300°C. Homogeneous but amorphous indium sulfide thin films were obtained from butylindium bis(isopropylthiolate) (nBuInSiPr₂) in P-xylene on these substrates at 300°C similarly. The sulfide thin films obtained were characterized by means of X-ray photoelectron spectroscopy (XPS), X-ray fluorescence Microanalysis, scanning electron microscopy (SEM) and optical band gap measurements.     

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Semiconducting copper sulphide (Cu₂S) thin films have been deposited on various substrates (SnO₂:F/glass, glass) by the simple and economical chemical bath deposition technique. The depositions were carried out during a deposition time of about 32.5 min in the pH range of 9.4 to 11. The synthesized Cu₂S thin films were characterized using various techniques without any annealing treatment. X-ray diffraction study shows that Cu₂S films exhibit the best crystallinity for pH = 10.2. For this pH value, Auger electron spectroscopy investigations show that Cu₂S thin films grown on an SnO₂/glass substrate exhibit stochiometric composition with [Cu]/[S] concentrations ratio equal to 2.02. Using the Kelvin method, the work function difference (Ф_material– Ф_probe) for the Cu₂S films deposited on SnO₂/glass substrates at the optimum pH value was found to be equal to 145 meV. Hall measurements confirm the p-type electrical conductivity of the obtained films. The electrical resistivity was of the order of 3.85 × 10⁻⁴ Ω-cm. The transmission and reflection coefficients vary in the range of [35–60] % and [5–15] % respectively, in the visible range, and the band gap energy is about 2.37 eV.     

Soft-templating synthesis of mesoporous magnetic CuFe2O4 thin films with ordered 3D honeycomb structure and partially inverted nanocrystalline spinel domains

Combining sol-gel chemistry with polymer templating strategies enables production of CuFe(2)O(4) thin films with both an ordered cubic network of 17 nm diameter pores and tunable spinel domain sizes. These nanocrystalline materials contain only minor structural defects with λ = 0.85 ± 0.02 and exhibit multiple functionalities, including superparamagnetic behavior (T(B)≈ 310 K) and redox- and photoactivity.     

Core-shell microspherical Ti(1-x)Zr(x)O2 solid solution photocatalysts directly from ultrasonic spray pyrolysis

A series of Ti(1-x)Zr(x)O(2) solid solutions photocatalysts (x = 0.000, 0.045, 0.090, 0.135, and 0.180) was directly obtained by an ultrasonic spray pyrolysis method. Compared with previous methods for solid solutions, our preparation was very fast. The resulting samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, nitrogen adsorption, and UV-vis diffuse reflectance spectroscopy. The characterizations revealed core-shell spherical structures of the resulting solid solutions. We evaluated photocatalytic activities of the solid solutions on degradation of rhodamine B in aqueous solution under simulated solar light. It was found that Ti(0.91)Zr(0.09)O(2) solid solution exhibited the highest photocatalytic activity among all the as-prepared samples. Its activity was much higher than that of P25. The formation mechanism of core-shell spherical structures was proposed. Moreover, we successfully extended this method to prepare microspheres of ceria and ceria-zirconia solid solutions. We think this general method may be easily scaled up for industrial production of microspherical solid solutions photocatalysts and catalysts.     

Epitaxial growth of single-crystalline Al(2)O(3) films on Cr(2)O(3)(0001)

Thin, crystallographically oriented single-crystalline Al2O3 films can be grown epitaxially on Cr2O3(0001) by codeposition of Al vapor and O2 at a substrate temperature of 825 K. The properties and growth of these films were monitored by Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), low-energy ion scattering (LEIS), and X-ray photoelectron spectroscopy (XPS). Two routes of preparation were investigated: (i) stepwise growth by alternating deposition of Al at room temperature and subsequent exposure to O2 at elevated temperatures; (ii) codeposition of Al and O2 at T > 800 K. The first route was consistently found to result in the growth of a complex interfacial oxide followed by the growth of polycrystalline Al2O3. The second mode of preparation provided homogeneous and ordered, probably (0001)-oriented, films of Al2O3 that maintained a LEED pattern up to a thickness around 10 A. The surface sensitive Cr MVV Auger transition at 34 eV was completely attenuated once the Al2O3 layer had reached a thickness of 6 A, pointing to film homogeneity at an early stage. This was confirmed by the absence of a significant Cr signal in LEIS spectra.     

Characterization of cyclotrimethylenetrinitramine (RDX) by pyrolysis H2O/D2O atmospheric-pressure chemical ionization tandem mass spectrometry

The oxidative pyrolysis-atmospheric-pressure chemical ionization tandem mass Spectrometry (Py-APCI MS/MS) of Cyclotrimethylenetrinitramine (RDX) was investigated under various sample introduction conditions. Subambient (0.97 atm) as opposed to ambient (0.98 atm) pressure (1 atm = 101325 kPa) facilitated the appearance of new pyrolysis mass spectral ions, including m/z 44. Deuterated decomposition products from [²H]RDX contained amide groups and, depending on the ion source pressure, significant differences in the degree of proton-deuterium exchange occurred on the amide groups. The D₂O Py-APCI MS/MS method also confirmed and extended the analogous H₂O APCI information from RDX, [²H]RDX and pure standards. The m/z 44 decompositon species was identified as protonated dimethylimine, [H₃CN?CH₂]⁺ as opposed to its primary amine isomer, [H₃CC(H)?NH]H⁺, which contains an acidic proton. It was determined that m/z 60 is due to protonated N-methylformamide and acetaldoxime, [H₃CC(H)?NOH]H⁺.     

Epitaxial electrodeposition of Fe(3)O(4) thin films on the low-index planes of gold

Half-metallic ferrimagnetic materials such as Fe(3)O(4) are of interest for use in spintronic devices. These devices exploit both the spin and charge of an electron in spin-dependent charge transport. Epitaxial thin films of Fe(3)O(4) have been grown on the three low-index planes of gold by electrodeposition. On Au(110), a [110] Fe(3)O(4) orientation that is aligned with the underlying Au(110) substrate is observed. Thin films on Au(100) grow with three different orientations: [100], [111], and [511]. On Au(111), both [111] and [511] orientations of Fe(3)O(4) are observed. The [511] orientations are the result of twinning on [111] planes. A polarization value of approximately -40% at the Fermi level was measured by spin-polarized photoemission at room temperature for a thin film on Au(111).     

Interaction of CO and NO with the spinel CuCr2O4 (100) surface: A DFT study

The characteristics of CO and NO molecules at Cu²⁺ and Cr³⁺ ion sites on the CuCr₂O₄ (100) surface have been studied by first principles calculations based on spin‐polarized density functional theory (DFT). The calculated results show that adsorption energies for X‐down(C, N) adsorption vary in the order: Cu²⁺‐CO>Cr³⁺‐NO≈Cr³⁺‐CO>Cu²⁺‐NO. CO molecules are preferentially adsorbed at Cu sites, whereas NO molecules adsorb favorably at Cu²⁺ and Cr³⁺ ion sites. The C‐O and N‐O stretching frequencies are red‐shifted upon adsorption. Combining the analysis of frontier molecular orbitals and Mulliken charge, for CO and NO X‐down adsorption systems, the 5σ orbitals donate electrons and the 2π^* orbitals obtain back‐donated electrons. Although for NO with O‐down adsorption systems, the NO‐2π^* orbitals obtain back‐donated electrons from substrates without 5σ‐donation. Coadsorption calculations show the CO/NO mixture adsorb selectively at the Cu²⁺ion site but simultaneously at the Cr³⁺ ion site, respectively. © 2008 Wiley Periodicals, Inc. Int J Quantum Chem, 2008     

Growth of Co clusters on thin films Al2O3NiAl(100)

We present a scanning tunnel microscopy study of Co clusters grown through vapor deposition on Al(2)O(3) thin films over NiAl(100) at different coverages and temperatures. Formation of Co clusters was observed at 90, 300, 450, and 570 K. At the three lower temperatures, we find narrow cluster size distributions and the mean sizes (with a diameter of 2.6 nm and a height of 0.7 nm) do not change significantly with the coverage and temperature, until the clusters start to coalesce. Even on 3-4-nm-wide crystalline Al(2)O(3) strips where the deposited Co atoms are confined, the same features sustain. Only at 570 K the normal growth mode where the cluster size increases with the deposition coverage is observed, although the data are less conclusive. A simple modeling of kinetic surface processes on a strip confirms the normal growth mode, but fails to show a favored size unless additional energetic constraints are applied on the cluster sizes. Increasing Co coverages to cluster coalescence, a larger preferable size (mean diameter of 3.5 nm and height of 1.4 nm) appears for growth at 450 K. These two sizes are corroborated by morphology evolution of high Co coverages deposited at 300 K and annealed to 750 K, in which the coalescence is eliminated and the two preferable geometries appear and coexist.