Simulations of AlGaAs/GaAs heterojunction phototransistors

Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.     

Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures

Micro-Raman scattering measurements were used to study the silicon delta-doped layer density variation effect on InAs ultrathin layer embedded in silicon-delta-doped GaAs/AlGaAs high electron mobility transistors (HEMTs) structures properties. These structures were grown by molecular beam epitaxy on GaAs substrates with different silicon (Si) delta-doped layer densities. Two coupled plasmon–longitudinal optical (LO) phonon modes (L− and L+) were observed in the micro-Raman spectra of the Si-delta-doped samples, and both their wave numbers and intensities were dependent on the silicon delta-doped layer density. There is evidence to suggest that the increase of the Si doping level results in the increase of exciton–phonon scattering which is mainly due to the incorporation of Si and the increase of the two-dimensional electron gas (2DEG) in the InAs/GaAs interface. From fitting the temperature-dependence of full width at half maximum (FWHM) of quantum well’s photoluminescence peak (P₁) by the exciton–photon coupling model, it was found that the interaction between exciton and phonon in Si-delta-doped quantum wells was higher than that in the undoped sample. This result was confirmed as resulting from the increase of plasmon–phonon scattering which is attributed to the increase of free carriers donated from implanted Si dopant. The self-consistent Poisson–Schrödinger model calculation results are in good agreement with the experimental results, where the 2DEG densities increase linearly with increasing the Si-delta-doped layer density.     

Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers

Electrophysical parameters of single and double delta-doped layers in GaAs epitaxial films grown by the metal-organic chemical vapor deposition have been systematically investigated in the temperature range of 4.2 to 300 K. The 2D electron gas density distribution is affected by the overlap of wave functions in neighboring quantum wells, as a result of which the peak on the curve of the Hall mobility in the 2D electron gas versus the separation between the quantum wells shifts. The persistent photoconductivity in delta-doped layers is due to the change in the surface potential caused by the neutralization of the negative charge of surface states by photoexcited holes. A method for comparing delta-doped layers grown under different conditions at different depths from the sample surface has been suggested. Zh. éksp. Teor. Fiz. 113, 693–702 (February 1998)     

Spatial distribution of impurities in delta-doped n-type GaAs

Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.     

Low temperature electron mobility in Ga0.5In0.5P/GaAs quantum well structures

We analyse the low temperature subband electron mobility in a Ga_0.5In_0.5P/GaAs quantum well structure where the side barriers are delta-doped with layers of Si. The electrons are transferred from both the sides into the well forming two dimensional electron gas (2DEG). We consider the interface roughness scattering in addition to ionised impurity scattering. The effect of screening of the scattering potentials by 2DEG on the electron mobility is analysed by changing well width. Although the ionized impurity scattering is a dominant mechanism, for small well width the interface roughness scattering happens to be appreciable. Our analysis can be utilized for low temperature device applications.      

Scattering involving LO phonons in tunneling to the 2D electron system of a delta layer

Tunneling to both one and two or three subbands of the 2D electron system of a delta-doped layer is observed in Al/δ-GaAs structures. The energy positions of 2D subbands in one sample are varied due to the diamagnetic shift or persistent tunneling photoconductivity. The change of the sign of a step in tunneling conductivity is observed at the threshold of the emission of an LO phonon when a successive subband is involved in tunneling. An increase in conductivity (positive step) is observed for inelastic intrasubband electron-phonon scattering. A decrease in conductivity (negative step) is observed when the ordinary processes of inelastic tunneling are supplemented by intersubband transitions of electrons that have tunneled in 2D electron systems with the emission of an LO phonon.     

Preparation of Co3O4 nanoplate/graphene sheet composites and their synergistic electrochemical performance

Co₃O₄ nanoplate/graphene sheet composites were prepared through a two-step synthetic method. The composite material as prepared was characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. The platelet-like morphology of Co₃O₄ leads to a layer-by-layer-assembled structure of the composites and a good dispersion of Co₃O₄ nanoplates on the surface of graphene sheets. The electrochemical characteristics indicate that the specific capacitance of the composites is 337.8 F?g^?1 in comparison with the specific capacitance of 204.4 F?g^?1 without graphene sheets. Meanwhile, the composites have an excellent rate capability and cycle performance. The results show that the unique microstructure of the composites enhances the electrochemical capacitive performance of Co₃O₄ nanoplates due to the three-dimensional network of graphene sheets for electron transport increasing electric conductivity of the electrode and providing unobstructed pathways for ionic transport during the electrochemical reaction.     

Thermal,transport, and magnetotransport properties of free charge carriers in Mn-doped structures with a GaAs/InGaAs/GaAs quantum well

The results of investigation of the magnetic and transport properties of a GaAs/InGaAs/GaAs quantum well delta-doped with carbon and manganese from different sides and containing a ferromagnetic phase are analyzed. A thermodynamic model is formulated and the composition of a system consisting of neutral Mn atoms, Mn ions, and holes in the quantum well is calculated for determining the concentration of free charge carriers. The contributions to the resistance from different mechanisms of hole scattering are calculated, and good agreement with the experimental temperature dependences of the resistance is attained. The calculated and experimental values of the negative magnetoresistance associated with variation in the contribution of scattering from magnetic ions of the spin-polarized system of charge carriers are found to be in quantitative agreement.     

密度渐变多层碳气凝胶靶型的制备

 以间苯二酚-甲醛为原料,结合自制活动式微模具成型工艺制备不同厚度和密度的碳气凝胶薄片,采用密度为10 mg·cm^-3的SiO₂溶胶为“粘合剂”,获得单元薄片厚度在100～580 μm,密度在50～400 mg·cm^-3范围内变化的5层密度渐变碳气凝胶靶型。重点研究了该特殊靶型内部C/SiO₂气凝胶层间界面情况。采用场发射扫描电镜（FESEM）,X射线相衬成像仪等对靶型整体结构及碳气凝胶单元薄片表面和内部微观结构进行了表征。结果表明：胶粘层SiO₂气凝胶厚度约为15 μm,厚度一致,远小于碳气凝胶层厚度且与碳气凝胶薄片的胶粘程度较好,界面平整,靶结构均匀。     

Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/δ〈Mn〉 heterostructures

Circularly polarized luminescence of light-emitting InGaAs/GaAs structures with a delta-doped Mn layer in a GaAs barrier was studied. The structural parameters were varied by different ways, among them are homogeneous and delta-doping with acceptor impurity, and removal of donor doping from the technological process. As it was found, the magnitude and polarity of the degree of circular polarization of luminescence strongly depend on the technological mode chosen. Simultaneous modeling of wave functions of structures highlights a good agreement between the parameters of circularly polarized luminescence and spatial distribution of wave functions of heavy holes relative to the Mn delta-layer.     

A GaAs–InGaAs optoelectronic switch with multiple operation states

An optoelectronic switch with both n- and p-type delta-doped (-doped) quantum wells was investigated. The -doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of -doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.     

Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure

<正>In this study,the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically.The energy band diagrams,electrostatic field near the last quantum barrier,carrier concentration in the quantum well,internal quantum efficiency,and light output power are systematically investigated.The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction.These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.     

量子限制受主远红外电致发光器件的制备与测量

采用分子束外延技术生长GaAs/AlAs三量子阱,并在中间的GaAs阱中δ-掺杂浅受主杂质Be原子,制作出量子限制受主远红外Teraherz原型电致发光器件.实验上测量得到4.5 K时器件的电致发光谱（EL）和电传输特性（I-V曲线）.在EL发射谱中清楚地观察到222 cm^-1处宽的尖峰,这来源于Be受主奇宇称激发态到其基态的辐射跃迁,而非辐射弛豫过程则使发射谱的信号很弱.另外在I-V曲线中072和186 V的位置出现两个共振隧道贯穿现象,分别对应于中间δ-掺杂量子阱受主能级1s_3/2(Γ₆+Γ₇)到左边非掺GaAs量子阱中HH带,及右边非掺杂GaAs量子阱中HH重空穴带到中间掺杂GaAs量子阱中Be受主杂质原子奇宇称激发态2p_5/2(Γ₆+Γ₇)能级的共振隧穿. 关键词： 量子限制效应 电致发光 共振隧穿效应 δ-掺杂GaAs/AlAs三量子阱     

Delta-doped quantum wire tunnel junction for highly concentrated solar cells

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration.The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.     

Effects of extreme disorder on electronic properties in δ-doped semiconductor microstructures—a realistic computer simulation

Impurity induced disorder is a key feature of strongly doped semiconductor microstructures. We present a theoretical approach which allows the realistic and efficient calculation of localized quantum states in layered, delta-doped systems and the resulting properties of the quasi-2D multisubband electron/hole gas. The random Coulomb potential is directly computed from the impurity distribution without any simplifying assumptions. Electron-electron interaction is treated self-consistently on the Hartree level. The extreme cases of the doping superlattice (strong disorder) and the modulation doped quantum well (weak disorder) are studied as example device structures. Intersubband absorption spectra are then calculated for both types of systems and studied as a function of the electron filling factor. Striking differences are found between the linewidths of potential fluctuations and absorption spectra. These results are explained on the basis of system geometry, nonlinear screening and intersubband correlations. Finally, we discuss possible future applications and extensions of the method.     

Sn and SnO2-graphene composites as anode materials for lithium-ion batteries

Sn and SnO₂-graphene composites were synthesized using hydrothermal process, followed by annealing in Ar/H₂ atmosphere, and characterized using x-ray diffraction, scanning electron microscopy, and transition electron microscopy. The results indicated that the polycrystalline metallic Sn forms nanospheres with a diameter of 100?～?300 nm, while the SnO₂ nanoparticles are much smaller with a size below 15 nm, which adsorb tightly on the surface of graphene sheets. The Sn and SnO₂-gaphene composites showed good electrochemical performance. After 55 charging/discharging cycles, the capacity remains above 440 mAh/g at a cycling rate of 400 mA/g and the coulombic efficiency is 99.1 %. The good electrochemical properties of the composites are partially contributed to the graphene component with good mechanical flexibility and electrical conductivity, which is an excellent carbon matrix for dispersing the Sn and SnO₂ nanostructures and provides the electron transport pathways as well.     

Microscopic mechanisms of self-compensation in Si delta-doped GaAs

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si delta-doped layers, as well as Si delta-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.     

On some new effects in delta-doped QWs

Self-consistent calculation of Schrodinger, Poisson and electroneutrality equation with embedded impurity binding energy calculations of delta-doped SiGe/Si quantum well structures are performed. The influence of several parameters of the structure on the impurity binding energy is studied and discussed. On the basis of found phenomena the idea of an optical modulator controlled by a weak electric field is put forward.     

High-frequency spin-valve effect in a ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spins

A new mechanism of magnetoresistance, based on tunneling emission of spin-polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions.     

Decorating reduced graphene oxide with Co3O4 hollow spheres and their application in supercapacitor materials

In this paper, a composite of reduced graphene oxide decorated by Co₃O₄ hollow spheres (Co₃O₄/RGO composite) has been synthesized by a one-pot solvothermal method. The samples are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Fourier transform infrared spectroscopy (FT-IR), Raman spectra and so on. The results demonstrate that the Co₃O₄ hollow spheres with good purity and homogenous size are absorbed onto the reduced graphene oxide sheets as spacers to prevent the aggregation of the graphene oxide sheets. Furthermore, the well electrochemical properties demonstrate that the Co₃O₄/RGO composite might have potential applications as electrode materials for supercapacitors.