CdS0.1Se0.9纳米晶体共振电光效应

采用电吸收谱(EA)的方法研究了在电场作用下,CdS_0.1Se_0.9纳米晶体光学性质的变化.分析了电场效应的物理机制,电场效应是使纳米晶体的吸收谱展宽和移动.第一激发态对外加电场敏感,而其它激发态不敏感.从电吸收谱上得到电光响应信号幅度与外加电场场强的平方成正比,表明纳米晶体的电光效应是 Kerr效应,具有三阶非线性极化率 χ⁽³⁾.     

In∶Nd∶LiNbO3晶体倍频性能的研究

在 LiNbO₃中掺进In₂O₃和Nd₂O₃, 以Czochralski技术生长了In∶Nd∶LiNO₃晶体. 通过光斑畸变法测得In∶Nd∶LiNbO₃晶体的光损伤阈值为1.98×104 W/cm², 比Nd∶LiNbO₃晶体的1.6×102 W/cm²高两个数量级以上;晶体吸收光谱的测试表明, In∶Nd∶LiNbO₃晶体的吸收边相对Nd∶LiNbO₃晶体发生紫移. 研究了In∶Nd∶LiNbO₃晶体的倍频性能, 结果表明, In∶Nd∶LiNbO₃晶体的相位匹配温度在室温附近, 倍频转换效率比Nd∶LiNbO₃晶体提高二倍.     

Nd∶KY(WO4)2和Nd∶KG(WO4)2晶体吸收光谱性能分析

通过研究分析钨酸盐晶体Nd∶KY(WO₄)₂和Nd∶KG(WO₄)₂在室温下的吸收光谱，发现这2种晶体具有作为激光晶体的优良特性。根据Judd-Ofelt理论和测试所得的吸收光谱及数据，用VC++编程计算出晶体的谱线强度、振子强度、吸收截面等，拟合得Nd³⁺离子的3个晶场调节参数Ω_λ(λ=2，4，6)的值，并从理论上计算了自发跃迁几率、能级寿命、荧光分支比和积分发射截面。从计算得出的荧光分支比β可以看出，Nd∶KY(WO₄)₂(β_1060nm=0.4380)和Nd∶KG(WO₄)₂(β_1060nm=0.4618)晶体荧光分支比都较大，计算了该晶体的X=Ω₄/Ω₆，并将其X值与其他晶体的X值加以比较，Nd∶KY(WO₄)₂和Nd∶KG(WO₄)₂均易于实现1.06μm激光输出，适合作为LD泵浦的钨酸盐晶体激光器。     

Mg:Fe:LiNbO3晶体的生长及光学性能研究

在Fe:LiNbO₃中掺进MgO和Fe₂O₃以提拉技术生长Mg:Fe:LiNbO₃晶体.对晶体进行极化和还原处理.测试晶体的吸收光谱,Mg:Fe:LiNbO₃晶体吸收边相对Fe:LiNbO₃晶体发生紫移.测试晶体的红外光谱,Mg:(5 mol%)Fe:LiNbO₃晶体OH^-吸收峰由Fe:LiNbO₃晶体的3482 cm^-1移到3534 cm^-1.采用锂空位模型阐述Mg:Fe:LiNbO₃晶体,吸收边和OH-吸收峰移动的机理.测试晶体的抗光致散射能力.Mg:(5 mol%)Fe:LiNbO₃晶体抗光致散射能力比Fe:LiNbO₃晶体提高一个数量级以上.测试晶体的衍射效率和响应时间.Mg:Fe:LiNbO₃晶体响应速度比Fe:LiNbO₃晶体提高四倍.     

FeSiF66H2O晶体的基态能级和零场分裂参量

由单晶的中子衍射方法得到FeS_iF₆6H₂O的晶体结构,这种晶体结构可以用S_iF^6-和Fe(H₂O)⁺⁺两个离子来描述,而局域三角对称的Fe(H₂O)⁺⁺离子反映了这种晶体的主要光谱性质利用不可约张量的理论,构成了晶体场和自旋轨道相互作用哈密顿完全对角化矩阵因此,由完全对角化的晶体场和自旋轨道相互作用哈密顿矩阵和电子顺磁共振的理论公式来求出晶体FeS_iF₆6H₂O中Fe²⁺离子的电子顺磁共振零场分裂参量D和Fa并研究了低自旋³L态对电子顺磁共振(EPR)零场分裂参量的贡献结果显示低自旋³L态对电子顺磁共振的零场分裂参量的贡献是较强的理论计算的结果与实验值是相符的.     

微通道板空间光调制器中电光调制的传递特性

本文利用折射率椭球和点电荷模型研究了MSLM中偏z轴斛切LiNbO₃晶体的介电,电光传递过程。导出了在纵向,横向电场同时存在时电光效应的表达式及调制区的电荷——电压传递函数解析式。讨论了横向电场和器件结构参数对输出的影响及优化设计问题。指出偏z轴30°～60°切割晶体都可得到较好结果。     

Co2+:ZnAl2O4晶体电子光谱及其2E态双重谱线结构的Jahn-Teller效应研究

在中间场耦合图象中,利用Racak不可约张量算符法和Wigner－Eckart定理,建立了3d⁷(C_3v)电子组态的完全能量矩阵;利用该矩阵研究了Co²⁺:ZnAl₂O₄晶体的电子光谱,理论与观测十分吻合．首次定量地解释了2E态的双重谱线结构,并从理论上预言了⁴A₂基态2.93cm^-1的零场分裂(ZFS)．研究结果定量地表明,Jahn－Teller效应所致Co²⁺:ZnAl₂O₄晶体Co²⁺中心局域结构的畸变假设是合理的．     

非线性光学晶体CsLiB6O10谐波产生的允许参量分析

根据波耦合中的能量动量守恒和色散方程,数值模拟计算了CsLiB₆O₁₀晶体在II类相位匹配下的倍频和混频产生的允许参量理论曲线.通过与β-BaB₂O₄晶体的比较,得到了CsLiB₆O₁₀晶体的谐波具有走离角小、允许参量范围宽的结果.     

Yb:YAG晶体的晶胞参量及Yb3+分凝系数的研究

应用提拉法生长出不同Yb³⁺浓度的Yb_3xY_3(1-x)Al₅O₁₂晶体.Yb³⁺离子的分凝系数1是1.08±0.01,与Yb³⁺离子掺杂浓度无关.研究了Yb_3xY_3(1-x)Al₅O₁₂晶体的晶胞参量,推导出联系晶胞参量、密度与Yb³⁺离子掺杂浓度的关系方程式.     

非线性光学晶体的高压拉曼散射研究

 报道了高压下非线性光学晶体KNbO₃（KN）,KIO₃（KI）和KTiOAsO₄（KTA）的Raman散射研究结果,压力引起的Raman光谱非常丰富,在所有的样品中都观察到了压致相变。另外,在KN晶体中发现了非常强的压致振动耦合现象及高压非晶相。对于KTA,建立了Raman光谱变化与其倍频效率随压力提高之间的可能联系。在22 GPa以上,KI晶体的基本组成集团可能由IO₃变为IO₆。     

电光晶体研究究进进展及其对称性性研研究

由电场引起的晶体折射率的变化称为晶体的电光效应,具有电光效应的晶体称为电光晶体。利用电光效应可以制作电光Q开关等重要光电器件。晶体的电光效应及其有效利用,均与其对称性密切相关。本文在综述电光晶体研究进展的基础上,推导了不同晶系中各晶类电光效应类型及其特点,并以电光Q开关的要求为例讨论了晶体的电光效应及其对称性之间的关系。从讨论结果得出:立方晶系Td-ˉ43m,三方晶系C3v-3m,四方晶系D2d-4ˉ2m,D4v-4mm和六方晶系D3h-6ˉm2,C6v-6mm点群中相应电光系数的横向或纵向效应可能有实用价值。在考虑旋光性影响后,立方晶系T-23,三方晶系D3-32,四方晶系中S4-4ˉ,六方晶系中C3h-6ˉ等也有可能应用。但是,电光晶体的应用与许多因素相关,对称性只是其中一个基本条件。     

Electro-Optic Coefficient Measurements for Zn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Te Single Crystals at 1550 nm Wavelength

Nonlinear optical materials of the type Zn _x Cd_1-x Te single crystals, where x = 0.0, 0.2, 0.4, 0.6, 0.7, 0.8, and 1.0, have been grown by the Bridgman method, using a vertical furnace. We have investigated the electro-optic (E-O) coefficient and refractive index of Zn _x Cd_1-x Te single crystals at optical communication wavelength (1550 nm). In the case of CdTe crystal, the E-O coefficient was 15.5 × 10^-12 m/V, which is the biggest among the E-O coefficients of Zn _x Cd_1-x Te crystals. The E-O modulation signal was very big in low frequency range (DC-100kHz), but the signal amplitude became smaller as we increased frequency above 100 kHz. We also found the acousto-optic modulation at CdTe single crystals.     

弛豫铁电单晶0.93Pb(Zn1/3Nb2/3)O3-0.07PbTiO3的电光性能研究

以波长为632.8 nm的He-Ne激光作为光源,研究了三方相弛豫铁电单晶0.93Pb(Zn1/3Nb2/3)O3-0.07PbTiO3在室温下的折射率和线性电光性质.通过测量晶体的布儒斯特角,确定了单晶的两个主轴折射率:no=2.466,ne=2.488.利用改进的马赫-泽德尔干涉法测量了单晶的线性电光系数:r33=71 pm/V,r13=4 pm/V.计算得到有效电光系数rc=67 pm/V及半波电压Vπ=610 V.单晶优异的电光性能使其在激光调制与偏转领域有着巨大的应用潜力.     

Electro-optic and electroreflectance effects in perovskite-type crystals

A model is presented which relates the electro-optic (E-O) and electroreflectance properties of ABO₃ perovskite-type crystals to their electronic energy band structure. These properties are assumed to result from electric-field-induced ionic displacements within each unit cell. SrTiO₃ was selected as the model perovskite and the band structure was calculated using LCAO parameters. LCAO momentum matrix elements were used to derive the optical excitation spectrum ?₂(ω). Field-induced changes in the Madelung potentials are found to dominate overlap effects. The E-O effects are insensitive to detailed relative ionic displacements and effective charges, but are characterized by the sum of the products of these quantities, namely the polarization. The results are compared with E-O, reflectance, and electroreflectance experiments.     

MSLM调制组件的电光性能

对设计并制作的[M_gF₂+(ZrO₂/SiO₂)]膜系·LiNbO₃·ITO/玻璃结构的MSLM用调制组件的综合电光性能进行了实验测定。结果表明,其反射半波电压V_πR为1.2kV±0.1kV,反射率达99%,峰值次级电子发射系数为5.8。用其制作的光导址MSLM具有良好的功能与性能。     

自混合干涉信号的位相调制

自混合干涉因其结构简单、紧凑、稳定且易准直等特点而被广泛应用于测量领域。从自混合干涉和电光晶体调制位相的基本原理出发,通过将电光晶体引入自混合干涉外腔调制,研究了自混合干涉测量中电光晶体的位相调制性能。实验证明,利用晶体的调制性能对自混合干涉信号进行位相调制,在很宽的频率范围内都能保证很高的调制精度,测量误差小,具有很好的应用前景。     

Measurement of the electro-optic coefficient of polymer thin films with better spatial resolution

A method for measuring the electro-optic coefficient of polymer films on the basis of an asymmetry Fabry–Perot cavity is introduced. The sample layer is located between two aluminium layers, which are deposited on glass substrates by thermal evaporation. This layer structure is objected to a laser beam, and a variable voltage is applied to the aluminium films resulting in a modulation of the transmitted laser power. The electro-optic coefficient γ₁₃ of the poled polymer film can be calculated by evaluating the Fabry–Perot equation. The spatial resolution is tested with a polymer film that was poled by a needle corona discharge in air through a metal grating with a period of 120 μm. By scanning the sample plate in the direction perpendicular to the grating lines, the spatial resolution is also demonstrated according to the spacing of the poled structure.     

Effective in-device r33 of 735 pm/V on electro-optic polymer infiltrated silicon photonic crystal slot waveguides

We design and fabricate a 320?nm slot for an electro-optic (E-O) polymer infiltrated silicon photonic crystal waveguide. Because of the large slot width, the poling efficiency of the infiltrated E-O polymer (AJCKL1/amorphous polycarbonate) is significantly improved. When coupled with the slow light effect from the silicon photonic crystal waveguide, an effective in-device r(33) of 735?pm/V, which to our knowledge is a record high, is demonstrated, which is ten times higher than the E-O coefficient achieved in thin film material. Because of this ultrahigh E-O efficiency, the V(π)L of the device is only 0.44?V?mm, which is to our knowledge the best result of all E-O polymer modulators.     

Nonlinear cross-phase modulation with intense single-cycle terahertz pulses

We have demonstrated nonlinear cross-phase modulation in electro-optic crystals using intense, single-cycle terahertz (THz) radiation. Individual THz pulses, generated by coherent transition radiation emitted by subpicosecond electron bunches, have peak energies of up to 100 microJ per pulse. The time-dependent electric field of the intense THz pulses induces cross-phase modulation in electro-optic crystals through the Pockels effect, leading to spectral shifting, broadening, and modulation of copropagating laser pulses. The observed THz-induced cross-phase modulation agrees well with a time-dependent phase-shift model.