Magnetization reversal processes in FeSm thin films

We have investigated the in-plane magnetization reversal in FeSm thin films and discovered that it can be controlled through an induced anisotropy. For films with an induced easy direction, reversal is ultra fast and can be characterized approximately using the Fatuzzo model. In films with no pronounced induced easy axis, the reversal is much slower and can be described using a logarithmic model. We have also investigated the short time (1–50 s) dependence of the remanent coercivity and fitted to logarithmic equations. For films with no pronounced easy axis, the time dependence of the coercivity correlates with the film thickness, indicating that the switching volume scales with thickness. For films with an induced easy direction, the time dependence of the coercivity is essentially constant, independent of film thickness, indicating no scalable switching volume.     

Observation of unrecoverable domains in two-dimensional-arrayed Pr0.5Ca0.5MnO3−y junctions

Two-dimensional-arrayed 14×14 sandwich-type junctions of Au–Pr_1−xCa_xMnO_3−y (PCMO, x=0.5)–SrRuO₃ were fabricated on SrTiO₃ (0 0 1) substrates. The resistivity–voltage (ρ–V) characteristics of each junction was measured by a two-probe method. The junctions that return to the insulating state after removing the voltage (recoverable) and the ones that remain metallic (unrecoverable) were found to co-exist in one PCMO film. The variation in the lattice constant of the PCMO film, rather than the variation of the composition, is thought to be related to the separation of recoverable–unrecoverable domains. Among several samples with a PCMO layer fabricated under various conditions, the junctions with thin PCMO layers deposited at low temperature showed a pronounced hysteresis in their ρ–V characteristics. The clear hysteresis and good crystallinity of PCMO films were correlated.     

Absolute magnetometry on ultrathin 3d-metal films by UHV-SQUID

Recently a combination of SQUID magnetometry with an UHV chamber and cooling capabilities was developed. This allows us to measure the remanent magnetization in statu nascendi with submonolayer sensitivity. Co and Ni films 2–20 monolayers (ML) thick were grown on Cu(0 0 1) and measured at temperatures between 40 and 300 K. We deduced separately surface and interface magnetic moment contributions by analyzing thickness-dependent moments of Co/Cu(0 0 1) and Cu/Co/Cu(0 0 1). The surface atoms are shown to carry a 32(5)% enhanced moment, while the interface moment is reduced by 17%. For the case of Ni thin films, the magnetization is almost bulk-like. Cu capping reduces the magnetization by 22% at 4 ML film thickness.     

Effect of freon flow rate on tin oxide thin films deposited by chemical vapor deposition

High quality fluorine-doped tin oxide (SnO₂:F) films on glass substrates were been prepared using chemical vapor deposition (CVD) method. The electrical properties, surface morphologies, structural properties and optical properties of the films were studied by varying the freon flow rates. The structure was analyzed by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to study the morphology. Energy-dispersive spectroscopy (EDS) was conducted to understand the surface fluorine composition of the film. The results showed that crystalline structure of the film had a have cassiterite-like diffraction patterns with a preferred orientation of (1 1 0). Surface roughness was evaluated by atomic force microscopy, characterized by root mean square (RMS) and average value (Ra). The SnO₂:F resistivity decreased as the freon flow rate increased. The films had a uniform thickness and a transmittance of 80–90% within the visible region of the spectrum.     

Observation of triangular terraces and triangular craters of CaF2 film on Si(1 1 1) substrate

We have investigated the growth mode and surface morphology of CaF₂ film on Si(1 1 1)7×7 substrate by reflection high-energy electron diffraction (RHEED) using very weak electron beam and atomic force microscopy (AFM). It was found by RHEED intensity oscillation measurements and AFM observations that three-dimensional (3D) islands grow at RT; however, rather flat surface appears with two-dimensional (2D) islands around 300 °C. Especially, at high temperature of 700 °C, characteristic equilateral triangular terraces (or islands) with flat and wide shape grow with the tops directed toward [1 1 −2] of substrate Si(1 1 1). On the other hand, the desorption process of the CaF₂ film due to electron stimulated desorption (ESD) was also examined. It was found that the ESD process at 300 °C forms characteristic equilateral triangular craters on the film surface with the tops (or corners) directed toward [−1 −1 2] of substrate Si(1 1 1), provided that the film was grown at 700 °C.     

A PdO(1 0 1) thin film grown on Pd(1 1 1) in ultrahigh vacuum

We present experimental results demonstrating that a high quality PdO(1 0 1) thin film can be grown on Pd(1 1 1) in ultrahigh vacuum by oxidizing the metal at 500 K using an oxygen atom beam, followed by annealing to 675 K. Low energy electron diffraction (LEED) images show that the [0 1 0] direction of the PdO(1 0 1) thin film aligns with the [−1 1 0] direction of the Pd(1 1 1) substrate, and that the PdO film grows in three degenerate domains, rotated 120° relative to one another. Based on excellent agreement between the experimental and simulated LEED patterns, we conclude that the surface structure of the PdO thin film deviates minimally from bulk-terminated PdO(1 0 1). Recent temperature programmed desorption (TPD) experiments also provide evidence that the PdO(1 0 1) thin film on Pd(1 1 1) is terminated by the stoichiometric surface in which half of the Pd atoms are coordinatively unsaturated (cus), corresponding to a cus-Pd atom density equal to about 35% of the surface density of Pd(1 1 1). The ability to generate a well-defined PdO(1 0 1) surface in ultrahigh vacuum should provide new opportunities for conducting model surface science studies of PdO, particularly studies aimed at elucidating the reactivity of PdO(1 0 1) toward species important in commercial applications of Pd catalysis.     

Microstructure and transport properties of YBa2Cu3O7−δ films produced by laser ablation from a BaF2/Y2O3/CuO target

The effects of varying the temperature and duration of the post-deposition anneal in watersaturated oxygen were investigated for YBa₂Cu₃O_7−δ films of varying thickness. The films were produced by laser ablation from pressed powder targets consisting of BaF₂,Y₂O₃, and CuO mixtures. This technique produces superconducting films with a highly textured surface. The films were fabricated on SrTiO₃ substrates and were analyzed with X-ray diffraction, scanning electron microscopy, and temperature dependent resistivity. Critical current density (J_c) measurements were performed in magnetic fields up to 1 T. For film thickness on the order of 900 nm, completely c-axis oriented films were obtained with a 60 min anneal at 850°C. Thinner films required less annealing, either shorter times or lower temperatures, to achieve similar results, indicating that the optimal annealing conditions are dependent on film thickness.     

Micromagnetic simulations of 200-nm-diameter cobalt nanorings using a Reuleaux triangular geometry

Using micromagnetic simulations, we investigated the magnetic states and switching processes of Co nanorings with lateral dimensions of 200 nm. We propose a special geometry of nanorings that adopts different Reuleaux triangular shapes. Reuleaux's triangles (RT) combine both the equilateral triangle and circular geometries. We studied the magnetic spin configurations of individual nanorings by varying the thickness and geometry of the nanomagnets. Our results demonstrated that in most nanomagnets exhibiting a thickness of less than 4 nm, there exists an onion-type state, which precedes either a twisted, double twisted, or cardioid state, when studying the magnetization reversal process. The hysteresis loops and magnetic states found in these RTs are compared with circular nanorings.     

Nb/Au/(1 1 0)YBa2Cu3O7−δ Josephson junctions: evidence against atomic scaled “corner junctions”

We report on I–V characteristics for in situ formed Nb/Au/(1 1 0)YBa₂Cu₃O_7−δ (YBCO) Josephson junction, where the homoepitaxial (1 1 0)YBCO film shows ultra-smooth surface morphology. The field dependence of critical supercurrent I_c shows anisotropic large junction behavior with normal Fraunhofer patterns expected from BCS model of d_x²−y² wave superconductors. This strongly suggests that the Nb/Au/(1 1 0)YBCO junctions cannot be regarded as atomic scaled corner junctions, in contrast with (0 0 1)/(1 1 0)YBCO grain boundary junctions to show “π-junction” with a pronounced dip near zero fields in field modulation of I_c.     

Tailoring surface electronic states via strain to control adsorption: O/Cu/Ru(0 0 0 1)

A possible relationship between population of the surface electronic state and chemical reactivity for Cu layers on Ru(0 0 0 1) is revealed by tunneling spectroscopy and microscopy. The surface state shifts down in energy with increasing thickness. Ab initio calculations indicate that the energy shift can be assigned to the decreasing tensile strain of the deposited film. The reactivity of the surface towards oxygen correlates with the population of this state, reaching a maximum at Cu thicknesses where the surface state is empty. These data provides an indication of the effect of strain on the reactivity of metal surfaces.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Probing charge transport in manganite film through switching parameters

We have investigated the bipolar resistive switching of Y_0.95Ca_0.05MnO₃ (YCMO) thin film on Si substrate using pulsed laser deposition. Simulation of Mn L_3,2 near-edge X-ray absorption fine structure has been executed by CTM4XAS to corroborate the presence of a mixed-valence state of Mn ions and oxygen vacancies. The charge transport in the film is described by the space charge limited mechanism. Murgatroyd and space charge limited mechanism relations are used to calculate the mobility and other switching parameters at high resistance state. With a decrease in the switching layer (near to positively biased electrode) thickness, better resistive switching was observed. This work indicates that the localized switching thickness and temperature strongly affect the resistive switching of the YCMO film.     

Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory

We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO₂/Al resistive random access memory devices. As TiO₂ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO₂/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO₂ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO₂ devices to the amorphous state with a low film density.     

Ultrasonic characterization of heavy metal TeO2–WO3–PbO glasses below room temperature

The longitudinal ultrasonic attenuation measurements have been made using pulse echo method at fundamental frequencies of 2, 4, 6 and 8 MHz in 20WO₃–(80−x) TeO₂–xPbO ternary tellurite glasses (x=10, 12.5, 15, 17.5 and 20 mol%) in the temperature range 160–280 K. The results showed the presence of a broad peak which shifts to higher temperature with increasing frequency. The ultrasonic attenuation peaks suggest that the experimental behavior is controlled by thermally activated structural relaxations. The internal friction, acoustic activation energy, deformation potential, relaxation strength, number of loss centers and density of state have been calculated both as a function of temperature and PbO content. The acoustic activation energy was found to decrease from 0.156 to 0.135 eV with the increase of PbO content. The results showed that both the number of loss centers and their activation energy decrease with the atomic ring size. An increase in the density of state is observed with addition of PbO content at the same frequency in the whole range of temperature which is associated with structural units formed when PbO is added.     

First-principles calculation of Mg(0 0 0 1) thin films: Quantum size effect and adsorption of atomic hydrogen

We have carried out first-principles calculation of Mg(0 0 0 1) free-standing thin films to study the oscillatory quantum size effect exhibited in the surface energy, work function, interlayer relaxation, and adsorption energy of the atomic hydrogen adsorbate. The quantum well states have been shown. The calculated energetics and interlayer relaxation of clean and H-adsorbed Mg films are clearly featured by quantum oscillations as a function of the thickness of the film, with oscillation period of about eight monolayers, consistent with recent experiments. The calculated quantum size effect in H adsorption can be verified by observing the dependence of H coverage on the thickness of Mg(0 0 0 1) thin films gown on Si(1 1 1) or W(1 1 0) substrate which has been experimentally accessible.     

Observation of a bi-domain state and nucleation free switching in mesoscopic ring magnets

We present the results of a study of the magnetic properties of an array of 34-nm thick Co(100) epitaxial ring magnets, with inner and outer diameters of d(in) = 1.3 microm and d(out) = 1.6 microm, respectively. Magnetic measurements and micromagnetic simulations show that a two step switching process occurs at high fields, indicating the existence of two different stable states. In addition to the vortex state, which occurs at intermediate fields, we have identified a new bi-domain state, which we term the onion state, corresponding to opposite circulation of the magnetization in each half of the ring. The onion state is stable at remanence and undergoes a simple and well characterized nucleation free switching.     

The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrate

A ZnO buffer layer and ZnO thin film have been deposited by the pulsed laser deposition technique at the temperatures of 200 C and 400 C, respectively. Structural, electrical and optical properties of ZnO thin films grown on sapphire (Al₂O₃) substrate with 1, 5, and 9 nm thick ZnO buffer layers were investigated. A minute shift of the (101) peak was observed which indicates that the lattice parameter was changed by varying the thickness of the buffer layer. High resolution transmission electron microscopy (TEM) was used to investigate the thickness of the ZnO buffer layer and the interface involving a thin ZnO buffer between the film and substrate. Selected area electron diffraction (SAED) patterns show high quality hexagonal ZnO thin film with 30 in-plane rotation with respect to the sapphire substrate. The use of the buffer can reduce the lattice mismatch between the ZnO thin film and sapphire substrate; therefore, the lattice constant of ZnO thin film grown on sapphire substrate became similar to that of bulk ZnO with increasing thickness of the buffer layer.     

The effect of thickness and annealing condition on the microstructure and magnetic properties of Fe/Pt multilayer thin films

[Fe(0.5 nm)/Pt(0.5 nm)]₄₀, [Fe(1 nm)/Pt(1.5 nm)]₂₀ and [Fe(3 nm)/Pt(3 nm)]₁₀ multilayer were prepared by DC magnetron sputtering. By conventional furnace annealing (CA) at 270–600 °C for various time, all of the films still remained the disordered structure with the soft magnetic phase. By rapid thermal annealing (RTA) at 500 °C for various time, we obtained the [Fe(1 nm)/Pt(1.5 nm)]₂₀ and [Fe(3 nm)/Pt(3 nm)]₁₀ films with L1₂ ordered FePt₃ phase which was almost ferromagnetic at room temperature. However, the [Fe(0.5 nm)/Pt(0.5 nm)]₄₀ films was still disordered state even under RTA. Compared with CA, RTA exposed an outstanding effect on accelerating the phase transition when the film thickness is over [Fe(0.5 nm)/Pt(0.5 nm)]₄₀.     

Superconducting properties of ZnO-doped (Bi, Pb)-2223 thick film on Ni and NiO substrates prepared by spray deposition technique

The superconductivity of ZnO-doped (Bi, Pb)-2223 thick film on the Ni and NiO substrates, which was prepared by the spray deposition technique with cold forging, was investigated by characterizing the critical current density (J_c), the critical temperature (T_c), the orientation factor (f), and the microstructure of the film. The thickness of the thick film prepared by the spray deposition method was approximately 10 μm. The maximum J_c value of (Bi, Pb)-2223 film on NiO substrate was approximately 2200 A/cm² (I_c = 110 mA) when the film was sintered at 865 °C for 1 h with a cooling rate of 0.5 °C/min from 865 °C to 650 °C; in the case of Ni substrate, a maximum J_c value of approximately 2000 A/cm² (I_c = 100 mA) was obtained for the (Bi, Pb)-2223 thick film when a cooling rate was 3 °C/min. Such a difference in the J_c values of (Bi, Pb)-2223 thick film on Ni and NiO substrates is attributed to the presence of reaction layer at the (Bi, Pb)-2223 and substrate interface. In addition, the variations in the orientation factor of (Bi, Pb)-2223 thick film on NiO substrate related to those of J_c values. The J_c values of (Bi, Pb)-2223 film on NiO substrate with ZnO doping extremely depended on the amount of ZnO doping and the 0.5 wt% ZnO-doped (Bi, Pb)-2223 thick film deposited on NiO substrate, which was sintered at 835 °C for 1 h in air with a cooling rate of 1 °C/min, showed a J_c value of approximately 1200 A/cm² (I_c = 60 mA). Thus, it is considered that a small amount of ZnO doping was effective in lowering the sintering temperature of (Bi, Pb)-2223 thick film, resulting the improvement in the intragranular weak bonding or Josephson junction.