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1.
A new technique, measurement of the electrical resistance change of the Ag layer, is developed to study the kinetics of photodissolution of Ag in amorphous As2S3. It is shown that the photodissolution rate is proportional to the light intensity absorbed in the As2S3 at the As2S3Ag interface, but photoelectrons ejected from the Ag into the As2S3 also contribute. The process is shown to be two-stage. Firstly a critical “radiation damage” dose must be accumulated in the As2S3. Secondly, the Ag atom is photon-assisted across the As2S3Ag interface activation barrier.  相似文献   

2.
Measurements of the electrical conductivity of Ag-doped bulk As2S3 glasses have been made as functions of temperature, pressure, frequency and Ag doping level. A Debye-like loss peak was observed near 104 Hz. The frequency of the loss peak is dependent on temperature, pressure and doping level, but these dependences are different from those of the dc conductivity. The ac loss is attributed to the Maxwell-Wagner losses characteristic of inhomogeneous materials. The materials are presumed to be inhomogeneous mixtures of As2S3 and Ag2S. We have also searched unsuccessfully for ac conductance in several bulk chalcogenide glasses.  相似文献   

3.
Photoinduced diffusion in Se/As2S3 and Sb/As2S3 nanomultilayered thin films are studied by X-ray photoelectron spectroscopy (XPS). The XPS measurements show the atomic movements during photoinduced diffusion in Se/As2S3 and Sb/As2S3 nanomultilayered film. The analysis of experimental data describes the nature of light induced changes in different structural units.  相似文献   

4.
Chalcogenide glasses are good candidate materials for ultra-fast non-linear optic devices. In this work, we present the photolithographic process and the plasma etching of arsenic tri-sulphide (As2S3) film. The films were deposited on thermally oxidized silicon substrates by ultra-fast pulsed laser deposition. To protect As2S3 film from photo-resist developer, thin resist layer ∼100-200 nm was remained on the UV exposed area by controlling resist development time. After removing the protective layer in oxygen plasma, As2S3 waveguides were patterned in inductively coupled plasma reactive ion etching (ICP-RIE) system using CF4-O2 gas mixture. We investigated the etch rate and the etch selectivity to photo-resist of As2S3 as a function of bias power, induction power, operating pressure, and gas flow rate ratio of CF4 and O2. The film is mainly etched by the chemical reaction with fluorine radicals. The content of oxygen in the plasma determines the etched sidewall profiles and nearly vertical profile was obtained at high oxygen content plasma.  相似文献   

5.
《Journal of Non》2006,352(6-7):562-566
X-ray induced structural changes at the Ag/As2S3 interface are investigated using X-ray photoelectron spectroscopy on the samples prepared within the spectrometer. The as-prepared film consists of stable heteropolar As–S bonds as well as ∼16% S (and As) atoms in lower (higher) electron density configurations such as the –S–S– (–As–As–) segments with ‘wrong’ homopolar bonds. Two distinct stages of the X-ray induced diffusion are revealed. At first, silver reacts with atoms within –S–S– like segments to form Ag–S bonds. In the second stage, the Ag–S bonds decompose due to the reaction of S with As atoms within the –As–As– ‘wrong’ segments to form As–S heteropolar bonds, and silver diffuses away from the interface into the film. The results provide guideline for enhancing silver photodiffusion in chalcogenide glass. The irradiation of the (Ag–Te)/As2S3 sample with X-rays shows that not only Ag, but Te also diffuses away from the surface.  相似文献   

6.
The kinetics of the photodissolution of Ag into glassy As2S3 films and its dependence on temperature have been studied by monitoring the changes that occur both in their transmission spectra and transmission of weakly absorbed broadband light. It was shown that besides of a low induction period, the photodissolution kinetics consists of two linear steps with different activation energies, followed by a parabolic tail. The transitions between photodissolution steps was found to be not monotonous and explained in terms of Elliott’s model, which asserts a simultaneous ionic and electronic charge transport controlled by chalcogenide properties, illumination and temperature. The evidence is given that the islanding of Ag layer in the course of photoreaction, results in an inversion of maxima and minima of transmission spectra. It is suggested that the islanding of Ag layer is not a consequence of a non-uniform dissolution but arises itself at critical thickness, at which Ag forms a continuous film.  相似文献   

7.
The spontaneous Stokes and anti-Stokes Raman spectrum of vitreous As2S3 is reported. The spectrum was recorded with both HeNe and Ar ion laser excitation lines in the transmission and reflection modes respectively. Spectra were recorded at various temperatures between 20°K and 465°K, the softening temperature of As2S3 glass. It is shown conclusively that the quasicontinous scattering observed at low wave number shifts (< 100 cm−1) is real in agreement with the theory of Shuker and Gammon and not an arbitrary background as previously reported. An approximate density of vibrational states is deduced from the polarized Raman spectra.  相似文献   

8.
The role of the compositional modulation at nano-scale dimensions (2–10 nm) in the enhancement of optical recording parameters in nanomultilayers, which contain Sb as active, optical absorbing and diffusing layers and As2S3 as barrier (matrix) layers was investigated. Comparison was made with single homogeneous layers made of ternary (As2S3)xSb1−x glasses and co-deposited from Sb and As2S3. It was shown that essential increase of the recording efficiency, sensitivity of the bleaching process, broadening of its spectral range occurs due to the stimulated interdiffusion of adjacent components in Sb/As2S3 nanomultilayers with optimized Sb layer thickness.  相似文献   

9.
Decay of dark polarization in glassy As2S3 is investigated by thermostimulated depolarization (TSD). An attempt is made to analyse the observed maximum at about 360 K. To get more insight into the TSD phenomena, dc conductivity measurements at corresponding temperature are also presented. It is not possible at present to identify the trapped species responsible for the non-uniform polarization, despite finding that identical traps are active in both surface and bulk trapping.  相似文献   

10.
Vibrational densities of states and infrared and Raman spectra have been calculated for a structural model of As2S3 glass. The calculations are based on simple semi-empirical forms for interatomic potentials, electric dipole moment and Raman polarizability. The bands of the calculated spectra agree well with those of the observed infrared and Raman spectra of As2S3 glass in intensity and position, although a small concentration of the wrong SS bonds remains in the structural model and causes an additional peak in the higher frequency region. The calculated depolarization ratio of the Raman spectra is consistent with the observed one.  相似文献   

11.
As2S3-Cu6PS5I nanocomposites are prepared by incorporation of nanocrystals of Cu6PS5I superionic conductor in As2S3 glass matrix. Their structural studies by scanning electronic microscopy are performed and the electrical conductivity of the nanocomposites is investigated. The temperature dependence of the nanocomposite optical absorption edge is studied; a non-Urbach behaviour of the absorption edge is revealed. Influence of different types of disordering on the optical absorption edge is studied.  相似文献   

12.
13.
Polarized room temperature Raman spectra of glassy As2SxSe3-x for 0≦×≦3 have been measured. Spectra for crystalline As2S1Se2 are reported. The polarization and intensity dependence upon composition are consistent with mixed pyramids of composition As2SnSe3-n and preclude phase separation in the glassy system.  相似文献   

14.
We discuss the atomic displacements of the optically active vibrational modes of vitreous (v-)As2O3 through comparisons of the infrared (ir) and Raman response with the corresponding spectra of the two crystalline polymorphs, claudetite, a layer crystal similar to orpiment, and arsenolite, a molecular crystal based on the As4O6 molecule. We conclude from these comparisons that the structure of the glass is composed of AsO32 pyramidal units that are corner connected to form a continuous random network. The character of the strong ir and polarized Raman modes in the vitreous form, suggests that the interconnection of these pyramidal units cannot be described by a random distribution of dihedral angles, but rather has peaks at angles characteristic of the different ordering in two-dimensional macromolecular layer basis of claudetite, and the As4O6 molecule. The comparisons are extended to v-As2S3 and vAs2Se3 where we conclude the dihedral angle distributions characteristic of an As4O6-like local geometry are less prevalent.  相似文献   

15.
K. Tanaka  A. Saitoh  N. Terakado 《Journal of Non》2009,355(37-42):1828-1831
Semi-free As2S3 flakes undergo visible-scale anisotropic deformations when exposed to linearly-polarized bandgap illumination. We investigate the behavior and also those in amorphous Se, GeS2, AgAsS2, and crystalline As2S3. These results suggest that the deformation occurs through photo-induced birefringence, photo-induced fluidity, and optical force.  相似文献   

16.
Spectroscopical and structural investigations directly reveal the presence of those structural units which were predicted by Myuller and coworkers to form the continuous network of As-S-Ge glasses. After refining Myuller's model to some extent, the variation with x of several physical properties (density, microhardness, electrical dark conductivity, photoconductivity, optical gap and first-neighbour coordination) in the whole series of As2S3Gex glasses can be either understood qualitatively or even calculated quantitatively with the aid of additivity laws.  相似文献   

17.
Velocities of 30 MHz longitudinal and shear ultrasonic waves have been measured in As2S3 and As2Se3 glasses as a function of hydrostatic pressure up to 1.5 kbar at 195 K and 3 kbar at 296 K. The elastic stiffness moduli are found to have relatively large, positive, pressure dependences which are about the same at both temperatures for both glasses. This behavior is attributed to the weakness of bonding between layers comprised of AsS3 and AsS3 pyramids.Inspection of data for a variety of glasses reveals a correlation between the value of CL/3CT and whether the elastic moduli are increased or decreased by pressure. (CL is the longitudinal modulus and CT the shear modulus.)Using the pressure dependences of the elastic moduli obtained in the present work, it is found that volume change is responsible for most of the temperature dependences of the moduli. In addition elastic gammas are obtained which are consistent with thermal Grüneisen gammas at 12 K. The pressure dependence of the volume of As2S3 glass at 296 K is calculated using the present results in the Murnagham equation. Agreement with volumetric data of Weir is obtained.  相似文献   

18.
75As Nuclear Quadrupole Resonance (NQR) lineshape measurements for the amorphous mixed chalcogenide system As2SxSe3?x are reported. The line-shapes are asymmetric and approximately 8 MHz in width (full width at half maximum). The peak resonance frequency is observed to increase approximately linearly with x. The NQR results indicate the presence of mixed As2(S, Se)3 pyramidal structural units and are thus not consistent with models that predict the occurrence of anion subsite segregation. NQR measurements performed on crystalline As2SSe2 lend support to the structural model proposed for the glasses.  相似文献   

19.
Glasses with general formula Agx(As0.33Se0.67)100−x were studied by means of modulated differential scanning calorimetry (MDSC), conductivity and permittivity measurements and atomic force acoustic microscopy (AFAM). In the whole range of doping (= 2–12 at.% Ag) a phase separation was supposed. The proportional amount of the ion-conductive Ag rich phase increased with the Ag content. A rapid increase (almost four orders of magnitude) in the conductivity was observed in the Ag concentration range 4–8 at.%, which could be associated with the interconnection of this ion-conductive phase. The transition from a hole conductivity (at low Ag concentration) to a mixed ionic-hole conductivity at higher Ag concentration was studied by permittivity measurements.  相似文献   

20.
The durability of a As2S3 chalcogenide glass composition was studied in de-ionized water at different temperatures (60-90 °C) for different periods of time, up to 120 days. The evolutions of the chemical composition and the pH of the solutions as well as the optical transmission of bulk samples, in the 2-10 μm region, were measured as a function of corrosion time. Atomic force microscopy and optical microscopy were used to investigate the roughness of corroded surfaces and the evolution of surface defects. The water corrosion of As2S3 glass was found to follow a congruent dissolution mechanism, a possible glass-water reaction mechanism was proposed. The optical transmission of the glass was found to be affected by the corrosion. The optical loss increased from 4 to 21% with corrosion time, this variation was attributed to the texturation of the surface by the reaction of corrosion. Moreover, the experimental results show that high temperature value enhances the corrosion reaction: an activation energy of 103 ± 2 kJ/mol was computed from experimental measurements.  相似文献   

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