Optical Transmittance and Band Gap of Ferroelectric BaTi2O5 Bulk Glass

Optical transmittance and reflectance on ferroelectric BaTi₂O₅ glasses prepared recently by a containerless synthesis technique are measured at room temperature in the wavelength range 190-800nm. The fundamental absorption edge located around 340nm demonstrates the colourless and transparent character of the glass. The optical band gap of 3.32eV has been estimated. The tail of the optical absorption near the fundamental absorption edge is found to follow the Urbach rule. Our analysis of the experimental spectra supports an indirect allowed interband transition between the valence band formed by O-2p orbitals and the conduction band formed by Ti-3d orbitals.     

Ellipsometric characterization of PbI2 thin film on glass

The optical properties of polycrystalline lead iodide thin film grown on Corning glass substrate have been investigated by spectroscopic ellipsometry. A structural model is proposed to account for the optical constants of the film and its thickness. The optical properties of the PbI₂ layer were modeled using a modified Cauchy dispersion formula. The optical band gap E_g has been calculated based on the absorption coefficient (α) data above the band edge and from the incident photon energy at the maximum index of refraction. The band gap was also measured directly from the plot of the first derivative of the experimental transmission data with respect to the light wavelength around the transition band edge. The band gap was found to be in the range of 2.385±0.010 eV which agrees with the reported experimental values. Urbach's energy tail was observed in the absorption trend below the band edge and was found to be related to Urbach's energy of 0.08 eV.     

Comment on the optical absorption edge in a-Si:H

The optical absorption edge of undoped amorphous silicon hydride has been measured using optical transmission, photoconductivity, and photothermal deflection spectroscopy. The results obtained by these techniques agree in the exponential edge region. An apparent inconsistency pointed out by Redfield between the optical absorption edge and the valence band tail density of states as measured by drift mobility is attributed to the non-exponential behavior of the absorption edge above α～10³ cm^-1.     

On the Urbach rule in sulphur-implanted Cu6PS5I superionic conductors

Cu₆PS₅I superionic crystals, grown using chemical vapour transport, were implanted by sulphur ions. The ion implantation effect on the phase transitions is studied by temperature isoabsorption investigation of the optical absorption edge. For the implanted crystals the optical absorption edge shape is studied in the temperature range 77-320 K, the parameters of exciton-phonon interaction, resulting in the Urbach behaviour of the optical absorption edge, are determined, the temperature dependences of the optical pseudogap and Urbach energy are obtained. The implantation effect on the ordering-disordering processes in Cu₆PS₅I superionic conductors is studied.     

Electrochemical Deposition and Properties of ZnTe Nanowire Array

Pulsed electrodeposited technique is applied to fabricate ZnTe nanowire arrays with different diameters into the anodic alumina membrane in citric acid solution. The x-ray powder diffraction, scanning electron microscopy and transmission electron microscopy indicate that the high ordered, uniform and single-crystalline nanowires have been fabricated. The optical absorption spectra of the nanowire array show that the optical absorption band edge of the ZnTe nanowire array exhibit a blue shift compared with that of bulk ZnTe, and the nonlinear current-voltage characteristic is observed.     

Compositional behaviour of Urbach absorption edge and exciton-phonon interaction parameters in Cu6PS5I1−xBrx superionic mixed crystals

Temperature behaviour of optical absorption edge in Cu₆PS₅I_1−xBr_x mixed crystals is studied in the interval 77-325 K. It is shown that the absorption edge has Urbach shape in the 215-325 K temperature interval. The influence of temperature and compositional disorder on the Urbach absorption edge parameters is presented. The mechanism of the Urbach bundle formation and the effect of I→Br anionic substitution on the exciton-phonon interaction parameters is elucidated.     

Reversible photostructural change in melt-quenched GeS2 glass

Reversible photostructural change accompanying optical absorption edge shift has been observed in melt-quenched Ges₂ glass for the first time. Experimentally determined values of photo-expansion and photo-induced optical absorption edge shift are 0.47% and 0.075 eV, respectively. It has been demonstrated that the structural origin for the reversible photostructural change should not be attributed to wrong bonds inherently involved even in the stoichiometric glass compounds     

Structure due to indirect exciton in photocurrent spectrum of homoepitaxial diamond film

Photocurrent spectrum in homoepitaxal diamond film formed by chemical vapor deposition has been measured in the photon energy range 5-6 eV of the vicinity of the indirect band gap. It has been seen that the line shape of the spectrum in the photon energy range lower than 5.6 eV agrees with the fundamental absorption edge spectrum in natural diamond. Structures in the spectrum have been explained from the optical transition due to indirect excitons assisted by TO phonons and indirect band-to-band transition.     

An optical spectroscopy study of defects in lithium tantalate single crystals

The congruent, stoichiometric, and Mg doped stoichiometric LiTaO₃ single crystals have been successfully grown by the Czochralski technique. The evolution of defect structures caused by varying composition and post-growth processing has been evaluated from the optical absorption and photoluminescence measurements. Optical absorption studies showed that the UV absorption edge is very sensitive to the composition of LiTaO₃ crystals. Photoluminescence of various LiTaO₃ single crystals at room temperature was observed. The emission bands centered at 360, 430, and 530 nm were assigned to different defects, which can well show the defect information in LiTaO₃ crystals.     

Pulse Compression Based on Laser-Induced Optical Breakdown in Suspension

Pulse compression based on laser-induced optical breakdown in suspension is investigated. The physical mechanism behind it is analyzed theoretically and validated in the Q-switched Nd：YAG laser system. A 12-ns pump pulse is suppressed to 5ns With good fidelity in the front edge and sharp steepness in the trailing edge. The HT-270, which has a small gain coefficient and absorption coefficient, is used as a solvent, and therefore the disturbance induced by stimulated Brillouin scattering and absorption are minimized and the transmittivity is enhanced.     

Transmission et indice de refraction des photoresines negatives KMR-747 dans l'infrarouge entre 2 et 10 μm

This paper deals with the infrared transmission and dispersion of negative photoresists KMR 747, available from kodak stock. We have computed the absorption coefficient curve and determined the refractive index of the material by an accurate interferometric measuring method (channeled spectrum) between 2 and 10 μm in wavelenght. The study of these optical constants permit one to precise the optimum utilization of the photoresists as phase profiles material for the infrared.     

Optical properties and band structure of a layered Tl2S crystal

The optical absorption spectra of a layered Tl₂S crystal have been studied at T = 293 K. In has been found that the fundamental absorption edge has an exponential shape in all samples under study. The ab initio calculations of the energy band structure of Tl₂S have been performed in terms of the density functional theory for the first time. Based on the complementary analysis of the results of the optical measurements and calculation of the energy band structure of the material, the model of formation of the exponential fundamental absorption edge of the layered semiconductor Tl₂S has been proposed.     

250 keV He+ 离子注入钽酸锂改性研究

室温下,将能量为250 keV He+ 离子注入z 切钽酸锂单晶,注量范围5.0x1014~5.0x1016 He+/cm2,应用三维轮廓仪、X射线衍射(XRD)、紫外可见(UV-Vis ) 光学吸收谱对未注入和注入样品进行了表征和分析。分析结果表明,在注量达到5.0x1016He+/cm2 时,样品表面出现大量凸起条纹,同时晶格沿着[001] 方向出现明显肿胀,吸收边则表现出明显的注量相关性。注入样品在空气中放置60 d后,最高注量的样品表面原来凸起的条纹变为细长的裂纹,晶格应变及光学吸收边均出现较大的恢复。讨论了样品表面形貌、晶格应变和光学吸收边与He 行为的关系。The effects of 250 keV He + implantation in the fluence from 5.0x1014 to 5.0x1016 He+/cm2 on lithium tantalate at room temperature were investigated by 3D surface profiler, XRD and UV-Vis optical absorption spectroscopies.The experimental results show that a large number of raised stripes appear on the surface of the sample and the significant lattice swelling occurs along the direction [ 001 ] at the fluence of 5.0x1016 He+/cm2. The dependence of changes absorption edge on the fluences was revealed. After the samples had been exposed to the air for 60 days, the raised stripes on the surface have evolved into narrow cracks. Furthermore, the lattice strain and the optical absorption edge has also recovered dramatically. The relationship between surface morphology, lattice strain, optical absorption edge and behaviorof He-ions was discussed.     

Structural and optical properties of Au-implanted ZnO films

The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 °C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO₂. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au⁰ is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission.     

The shift of the optical absorption edge in an antiferromagnetic semiconductor

Thes-f model with spinS=7/2 has been used to study the temperature dependence of the optical absorption edge of an antiferromagnetic semiconductor. Two possible antiferromagnetic structures are considered: anAB two-sublattice model and an eight-subllattice model (MnO structure). For theAB two-sublattice model the density of states has been calculated as a function of temperature. A blue shift of the absorption edge of about 0.057 eV is obtained betweenT=T _N andT=0 K for this structure (using the parameters for EuTe). The dependence of the blue shift on the bandwidth and the band filling has been studied. For small values of the band filling the blue shift is practically unchanged.In the case of eight-sublattice structure the lowest single-particle energy (the bottom of the conduction band edge) has been observed as a function of temperature. Using the parameter set suitable for EuTe, it is concluded that the eight-sublattice structure does not show any shift of the optical absorption edge when the temperature is varied.     

GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究

采用射频磁控共溅射与高真空退火相结合的方法,分别在单晶硅片和光学石英玻璃片上制备了ＧａＡｓ／ＳｉＯ２纳米晶镶嵌薄膜样品。激光拉曼光谱的测量结果表明,退火态样品（４００℃,６０ｍｉｎ）的拉曼光谱特征峰呈现宽化和红移,红移量为９．５ｃｍ＾－１,对应薄膜中ＧａＡｓ纳米晶粒平均粒径约为３ｎｍ。样品的室浊吸收光谱测量结果表明,由于受量子限域效应的主导作用,与ＧａＡｓ块状单晶相比,样品光学吸收边呈现出明显的蓝     

Spectroscopic Ellipsometry Study on Surface Roughness and Optical Property of AZO Films Prepared by Direct-Current Magnetron Reactive Sputtering Method

All as-deposited AZO films by direct current magnetron reactive sputtering （DC-MS） exhibit ZnO characteristic （002） and （103） diffraction peaks. Especially, AZO films prepared at 200℃ show a strongest （002） c-axis pref- erential orientation due to the minimum stress along the （002） orientation. The results show that larger stress easily induces a rougher surface. The film real and imaginary parts of dielectric constants show a sharp changes near the optical absorption edge due to the interband direct transition. The film blue and red shifts of the optical absorption edge can be explained in terms of the change of Free-electron concentration in as-deposited AZO films.     

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO2 matrix by radio-frequency magnetron co-sputtering

Nanocrystalline GaSb embedded in SiO₂ films was grown by radio-frequency magnetron co-sputtering. X-ray diffraction pattern and transmission electron microscopy (TEM) confirm the existence of GaSb nanocrystals in the SiO₂ matrix. The average size of GaSb nanoparticles is in the range of 3 to 11 nm. Diffuse reflectance spectra were used to characterize the small change of the band gap of the semiconductor. The diffuse reflectance spectra shows that the absorption peaks have a large blueshift of about 4.0 eV of the absorption relative to that of bulk GaSb. It has been explained by quantum confinement effects. Room temperature optical transmission spectra show that the absorption edge exhibits a very large blueshift of about 2.1 eV with respect to that of bulk GaSb in agreement with quantum confinement. Received: 28 July 1999 / Accepted: 27 October 1999 / Published online: 1 March 2000     

The optical absorption edge of brookite TiO2

The optical absorption edge of brookite TiO₂ was measured at room temperature, using natural crystals. The measurements extend up to 3.54 eV in photon energy and 2000 cm⁻¹ in absorption coefficient. The observed absorption edge is broad and extends throughout the visible, quite different from the steep edges of rutile and anatase. No evidence of a direct gap is seen in the range measured. The spectral dependence of the absorption strongly suggests that the brookite form of TiO₂ is an indirect-gap semiconductor with a bandgap of about 1.9 eV.     

Electronic structure calculations of transparent conductor Cd3TeO6: Optical properties and the effect of In-substitution

The electronic structure of Cd₃TeO₆ has been studied in the terms of first-principles calculations based on the density functional theory in order to investigate their optical properties and In-substitution effects. It was found that the highly dispersed bottom of the conduction band formed from Cd-s orbitals is the origin of the high transparency and conductivity. Cd₃TeO₆ exhibited optical anisotropy in its main crystal axes, and the c-axis showed the most suitable crystal growth direction for obtaining a wide transparent region. A pronounced shift of the absorption edge was effectively observed by the In-substitution, reflecting the domination of the In-5s level in the conduction band near the Fermi level.