Conduction on localized states in Nb/Al2O3 semiconducting films

Electrical conduction in co-evaporated semiconducting Nb/Al₂O₃ films (1: 1 volume ratio) is determined by the high density of localized levels in the energy gap of the alumina. The tunnelling between the metal particles occurs via a hopping mechanism on these states. The transitions have an activation energy of the order of kT, due to the continuous distribution in energy of the localized levels. The conductivity dependence on temperature in the ohmic range leads to a density of states times mobility product increasing exponentially above the Fermi level. The current-field dependence in the high-field regime gives information about the density of states, which is inferred to increase linearly with energy above the Fermi level.     

Some features relevant to switching processes in the amorphous semiconductor Si12Ge10As30Te48

The current-voltage characteristics of the amorphous semiconductor glass Si₁₂Ge₁₀As₃₀Te₄₈ have been measured under various experimenal conditions. The experimental results show that the resistance of the device in the ‘off’ state and the threshold voltage for the onset of switching action decrease with increasing the maximum current (I_p) passing through the device in the ‘on’ state, and that the threshold input power to set in the switching action is practically independent of temperature. The stability and the consistency of the device depend on the magnitude of I_p. When I_p is increased to a certain value the glass within and near the current filament between the electrodes become softened, and when it reaches a critical value the device is changed from its ‘switching-on’ state to a ‘memory’ state. All the results are in good agreement with the model that the filament formed to cause switching consists of a mixture of crystalline domains and amorphous domains with phase separations.     

Phase transitions and electrical properties of As2Te3

This study identifies and characterizes the phase transitions induced thermally in bulk amorphous and crystalline As₂Te₃. In addition, it examines the nature and the electrical properties of the various As₂Te₃ phases, and attempts to correlate the memory electrical switching exhibited by these materials with their phase transitions.     

High field electrical switching behavior of Ge10Se90−xTlx glasses

Electrical switching studies on bulk Ge₁₀Se_90−xTl_x (15 ? x ? 34) glasses have been undertaken to examine the type of switching, composition and thickness dependence of switching voltages. Unlike Ge-Se-Tl thin films which exhibit memory switching, the bulk Ge₁₀Se_90−xTl_x glasses are found to exhibit threshold type switching with fluctuations seen in their current-voltage (I-V) characteristics. Further, it is observed that the switching voltages (V_T) of Ge₁₀Se_90−xTl_x glasses decrease with the increase in the Tl concentration. An effort has been made to understand the observed composition dependence on the basis of nature of bonding of Tl atoms and a decrease in the chemical disorder with composition. In addition, the network connectivity and metallicity factors also contribute for the observed decrease in the switching voltages of Ge₁₀Se_90−xTl_x glasses with Tl addition. It is also interesting to note that the composition dependence of switching voltages of Ge₁₀Se_90−xTl_x glasses exhibit a small cusp around the composition x = 22, which is understood on the basis of a thermally reversing window in this system in the composition range 22 ? x ? 30. The thickness dependence of switching voltages has been found to provide an insight about the type of switching mechanism involved in these samples.     

DC conduvtivity of V2O5TeO2 glasses

The dc conductivity of semiconducting vanadium tellurite glasses of compositions in the range 50 to 80 mol% V₂O₅ has been measured in the temperature region 77 to 400 K. Measurements have been made on annealed samples at different annealing temperatures. Annealing the samples at temperature of about 250°C causes the appearance of a complex crystalline phase resulting in an increase of conductivity. Results are reported for amorphous samples of different compositions. The conductivity of tellurite glasses is slightly higher than the corresponding composition of phosphate glasses, but the general trend of the increase of conductivity and decrease of high temperature activation energy with increasing V₂O₅ content is similar in the two systems. The data have been analysed in the light of existing models of polaronic hopping conduction. A definite conclusion about the mechanics of conduction (adiabatic or nonadiabatic) is difficult in the absence of a precise knowledge of the characteristic phonon frequency v₀. Adiabatic hopping is indicated for v₀～10¹¹ Hz, however this value leads to unreasonably low value for the Debye temperature θ_D, and higher values for v₀～10¹³ hz satifiies the conditions for nonadiabatic hopping which appears to be the likely mechanism of conduction in V₂O₅TeO₂ glasses. The low temperature data (< 100 K) can be fitted to Mott's variable range hopping, which when combined with ac conductivity data gives reasonable values of α, but a high value for the disorder energy.     

X-ray diffraction study of phase transitions in Na3Sc2(PO4)3 and Ag3Sc2(PO4)3 single crystals in temperature range from 160 to 500 K

Two phase transitions are revealed for the first time in Ag₃Sc₂(PO₄)₃ single crystals in the vicinity of the temperatures 303 and 165–180 K. It is established that the phase transition at 303 K corresponds to the well-known phase transition to the superionic state in Na₃Sc₂(PO₄)₃ single crystals in the temperature range 423–433 K, whereas the phase transition observed in the temperature range 170–180 K corresponds to the phase transition from the rhombohedral to monoclinic phase at about 320 K in the monoclinic Na₃Sc₂(PO₄)₃ single crystals. It is also established that rhombohedral Na₃Sc₂(PO₄)₃ single crystals undergo the second phase transition. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 122–126. Original Russian Text Copyright ? 2005 by Shilov, Atovmyan, Kovalenko.     

The neutron diffraction study of liquid GeTe and As2Te3

The radial distribution analyses for GeTe and As₂Te₃ are made at temperatures above the melting point in the range of momentum transfer between 0.7 and 10.0 Å^?1 by the neutron diffraction technique. Furthermore, the local order in amorphous GeTe is determined by analyzing the intensity data of the electron diffraction of its thin film. The result for the amorphous film indicates that the local distribution of atoms in amorphous GeTe is not characteristic of the structure of its crystalline state. The shape of the peaks of the intensity curve for liquid GeTe differs from that for the amorphous and crystalline states. However, the short bond length and the small coordination number determined from liquid RDF suggest that the covalent-like bonding between nearest-neighbor atoms remains unbroken when melting. The general form of the structure factor for liquid As₂Te₃ is similar to that for the amorphous material reported previously. The position of the first peak of RDF in the liquid state is observed to be shifted to a shorter distance than the average of nearest-neighbor atoms in crystalline As₂Te₃. The structure of GeTe differs considerably between the crystalline, amorphous and liquid states, whereas the local order in the liquid As₂Te₃ is similar to that in the amorphous state but not in the crystalline state.     

Phase separation and crystallization in the system SiO2-Al2O3-P2O5-B2O3-Na2O glasses

The phase separation and crystallization behavior in the system (80 − X)SiO₂ · X(Al₂O₃ + P₂O₅) · 5B₂O₃ · 15Na₂O (mol%) glasses was investigated. Glasses with X = 20 and 30 phase separated into two phases, one of which is rich in Al₂O₃-P₂O₅-SiO₂ and forms a continuous phase. Glasses containing a larger amount of Al₂O₃-P₂O₅ (X = 40 and 50) readily crystallize and precipitates tridymite type AlPO₄ crystals. It is estimated that the phase separation occurs forming continuous Al₂O₃-P₂O₅-SiO₂ phase at first, and then tridymite type AlPO₄ crystals precipitate and grow in this phase. Highly transparent glass-ceramics comparable to glass can be successfully obtained by controlling heat treatment precisely. The crystal size and percent crystallinity of these transparent glass-ceramics are 20-30 nm and about 50%, respectively.     

Effect of Bi2O3 proportion on physical, structural and electrical properties of zinc bismuth phosphate glasses

The variation in physical, structural and electrical properties has been studied as a function of Bi₂O₃ content in 20ZnF₂-(10 + x) Bi₂O₃-(70-x) P₂O₅, 0 ≤ x ≤ 10 mol% glasses, which were prepared by melt quenching technique and characterized by differential thermal analysis (DTA). Colorless samples, which have no absorption peaks, are obtained for 10 and 12 mol% of Bi₂O₃ and the glasses are slowly becoming brownish from 15 to 20 mol% of Bi₂O₃ which exhibit two absorption peaks at ~ 370 nm, ~ 450 nm correspond to Bi° transitions ⁴S_3/2 → ²P_3/2 and ⁴S_3/2 → ²P_1/2 respectively. The decrease in ³P₁ → ¹S₀ transition of Bi³⁺ photo luminescence emission for 18 and 20 mol% of Bi₂O₃ and increase in optical absorption area shows the reduction of Bi³⁺ to Bi°. From FTIR studies it is observed that an addition of Bi₂O₃ decreases the P―O―P covalent bond by forming P―O―Bi bonds due to high polarizing nature of Bi³⁺ ions. Dielectric parameters like ε', tan δ and a.c. conductivity σ_ac are found to increase and activation energy for a.c. conduction is found to decrease with the increase in the concentration of Bi₂O₃. Density of defect energy states is found to increase for higher concentration of Bi₂O₃ and is discussed according to quantum mechanical tunneling (QMT) model.     

Thermoelectric power of amorphous compound semiconductors

Thermoelectric power measurements as a function of temperature have been made on four V–VI amorphous chalcogenides, ten IV–VI amorphous chalcogenides of the Ge_xTe_1?x system, and five amorphous IV–V materials. In the IV–V and the intermediate composition IV–VI materials, the charge transport cannot be described on the basis of conduction at only one energy level. The former exhibit characteristics of conduction both in extended states and in localized states at the Fermi level. Transport in the V–VI materials can be formally described in terms of conduction at one level in either the chaotic band or the small polaron models, but the use of a two-channel model with transport simultaneously in both p-type extended and localized states seems the most promising.     

Electrical conductivity and dielectric properties of Bi2O3-GeO2-PbO-MoO3 glasses

Glasses having compositions 40Bi₂O₃-20GeO₂-(40−x)PbO-xMoO₃ (where x = 3, 6, 9, 12 and 15 mol%) were prepared by normal melt quenching technique. The density (d) decreases gradually with the increase of the MoO₃ content in such glasses. This may be due to the lower molecular weight MoO₃ is substituted by a higher molecular weight PbO. The dc conductivity decreases while the activation energy increases with the increase of the MoO₃ content. The dc conductivity in the present glasses is electronic depends strongly upon the average distance, R, between the Mo ions. Analysis of the electrical properties has been made in the light of small polaron hopping model. The parameters obtained from the fits of the experimental data to this model are reasonable and consistent with glass composition. The conduction is attributed to non-adiabatic hopping of small polaron. Dielectric properties (constant ε, loss tan δ, ac conductivity σ_ac, over a range of frequency 0.12-100 kHz and temperature 325-650 K and frequency exponent s) of these glasses have been studied.     

A study of nonlinear optical properties in Bi2O3-WO3-TeO2 glasses

A series of bismuth tungsten tellurite glasses were prepared and their densities, linear refractive indices and transmission spectra were measured. The optical bandgaps E_opt and Urbach energies E_e of glasses were obtained from ultraviolet absorption edges. Both the optical gap (E_opt) and the band tail (E_e) are behaving oppositely. As the value of E_opt decreases with increasing WO₃ content, the degree of disorder increases which causes more defects or localized states resulting in deep localized in the bandgap with the tailing increased. Z-scan technique was carried out to investigate the third-order nonlinear optical properties of Bi₂O₃-WO₃-TeO₂ glasses. The third-order optical nonlinearity increases with decreasing the optical bandgap E_opt, since a increase of WO₃ content can provide the non-bridging oxygen ion content.     

Hopping conduction in amorphous Nb2O5 thin films

The low field conduction mechanism in amorphous Nb₂O₅ doped with Nb is investigated by measurements of the ac conductivity as a function of frequency (3 Hz?6 × 10⁶ Hz), dc conductivity as a function of temperature (100–400 K), capacitance as a function of frequency (3 Hz?6 × 10⁶ Hz) and conductance G as a function of voltage at 10³ Hz. Loss tangent and quality factor data are also given because of their technical and scientific relevance. Evidence for hopping conduction at low applied fields is presented by the following results: (1) a monotonic increase in ac conductivity σ(ω)αωⁿ where 0.5 < n < 1.0 in the range 3 Hz?6 × 10⁶ Hz; (2) a linear dependence of current on voltage at low fields; and (3) low activation energy for dc conduction with a transition at 210 K to a still lower activation energy; and (4) a decrease in polarizability with frequency. At high fields, E > 10⁵ V/cm, dc conductivity is dominated by the field emission mechanism of the Poole-Frenkel or Poole type.     

Field-dependent negative-U model and switching in chalcogenide glasses

Using the Anderson negative-U model, with harmonically bound ionic charges, one finds that the electric dipoles of singly (D₀) and doubly (D₋) occupied dangling bonds can be streched by a strong electric field. The D₀ and D₋ energies become field-dependent, with the splitting E₀(F₋)−E_(F) vanishing at a critical field F_c when D₀ becomes more stable. Assuming that Zener tunneling to extended states occurs only from singly occupied states, but not from D₋ states, a qualitative picture for Ovshinsky switching follows: there will be a jump in the D₀ occupation and hence in the carrier concentration at F = F_c. Field magnitudes and delay times are estimated. Memory switching is also discussed.     

Electrical properties of AsxSe1−x (x ≤ 0.05) Mott-barriers

We have experimentally measured the current-voltage and capacitance-voltage characteristics of Au/amorphous As_xSe_1 − x (x ≤ 0.05)/Zr trilayer structures at temperatures from 4 to 295 K. The observed capacitance of structures with an amorphous As_xSe_1 − x (a-As_xSe_1 − x) thickness of ~ 0.4 to ~ 2.8 μm does not significantly change over the entire range of applied bias (− 5 V to 5 V), indicating that the a-As_xSe_1 − x films are fully depleted and thus the structures are Mott barriers. The current-voltage (I-V) characteristics of the a-As_0.03Se_0.97 device at low (< 3000 V/cm) to moderate fields (3000 V/cm-10000 V/cm) follow the predictions of trap limited space charge conduction theory, as they exhibit Ohmic behavior at low fields and trap limited space charge current at moderate fields. According to the trap limited space charge current model of Lampert, the a-As_0.03Se_0.97 film has an effective hole mobility, Θμ (with Θ < 1), of ~ 5 × 10^− 7 cm²/V-sec at 295 K. This value is similar to, but consistently lower than previously reported mobilities inferred from time of flight measurements. The current at high fields (> 10⁴ V/cm) increases rapidly with applied field as a result of carrier emission from localized states and is consistent with transport by the Poole-Frenkel mechanism. A permanent transition to a high conductance state (~ 10^− 3 S) is observed after exposure to very high electric fields (~ 4 × 10⁵V/cm).     

Structure and electrical conductivity of new Li2O-CeO2-B2O3 glasses

Fourier transformation infrared spectra, density and DC electrical conductivity of 30Li₂O · xCeO₂⋅(70 − x)B₂O₃ glasses, where x ranged between 0 and 15 mol%, have been investigated. The results suggested that CeO₂ plays the role of network modifier up to 7.5 mol%. At higher concentrations it plays a dual role; where most of ceria plays the role of network former. The density was observed to increase with increasing CeO₂ content. The effect on density of the oxides in the glasses investigated is in the succession: B₂O₃ < Li₂O < CeO₂. Most of CeO₂ content was found to be associated with B₂O₃ network to convert BO₃ into B O₄⁻ units. The contribution of Li⁺ ions in the conduction process is much more than that due to small polarons. The conductivity of the glasses is mostly controlled by the Li⁺ ions concentration rather than the activation energy for CeO₂ > 5 mol%. Lower than 5 mol% CeO₂ the conductivity is controlled by both factors. The dependence of W on BO₄⁻ content supports the idea of ionic conduction in these glasses.     

Crystallization process on amorphous GeTeSb samples near to eutectic point Ge15Te85

One of most important properties of some tellurium-based chalcogenide glasses is the optical and electrical switching between two states: the glass and the crystalline state. The understanding in these systems of the glass to crystal transition and its transformation kinetics is essential for their application in non-volatile memories. GeTeSb and GeTe amorphous samples of compositions close to the eutectic point Ge₁₅Te₈₅ were obtained by rapid solidification from the liquid state employing melt spinning technique. The glass forming ability of this system, for this cooling technique, is restricted to a small composition range nearby the binary eutectic. The crystallization kinetics of the samples was studied by means of differential scanning calorimetry (DSC) under both isothermal and continuous heating regimes. The quenched samples and the crystallization products have been characterized by X-ray diffraction with Cu(Kα) radiation. The crystallization temperature, activation energy, crystallization enthalpy and the dependence of these properties on concentration are reported. The crystallization study of Ge₁₅Te₈₅ glasses shows: a primary crystallization of Te superimposed with a secondary crystallization of GeTe. The addition of Sb (5 at.%) to the eutectic point Ge₁₅Te₈₅ modifies this behavior: the crystallization of Ge₁₃Sb₅Te₈₂ glasses consists on the crystallization of Te and Ge₂Sb₂Te_5. The crystallization of the ternary glasses was modeled.     

Crystallization of amorphous Ni35Zr65 and Fe40Ni40P14B6 under proton irradiation

Two amorphous alloys, Ni₃₅Zr₆₅ and Fe₄₀Ni₄₀P₁₄B₆, were irradiated using 400 keV protons at several temperatures below the crystallization temperature, T_x, to peak doses in the neighborhood of 3.5 to 4.5 dpa. Irradiation at 250°C resulted in the crystallization of both alloys, which were examined by transmission electron microscopy of samples electrolytically polished to various distances from the irradiated surface to study the effect of dose. Samples masked from the proton beam remained amorphous during irradiation. In the Ni₃₅Zr₆₅ alloy crystallization of the equilibrium phases propagated throughout the entire sample, while the in the Fe₄₀Ni₄₀P₁₄B₆ alloy crystallization was observed only in those parts of the samples lying within the proton range. Neither alloy crystallized during irradiation at 100°C. In both these alloys the amorphous phase is therefore evidently stable at irradiation temperatures below approximately 0.6 T_x. An examination of the literature on irradiation damage of binary alloys and intermetallic compounds suggests that there is a tendency for initially amorphous alloys to remain amorphous at irradiation temperatures, T_irr < 0.3 T_L, where T_L (≈T_x) is the “melting” temperature (either a eutectic, peritectic or congruent melting temperature). Also, these same alloys, even when they are initially crystalline, transform to the amorphous state during irradiation at T < 0.3 T_L. Some other crystalline alloys have also been shown to transform to the amorphous state at T_irr < 0.3 T_L even though they have never been prepared in this condition by rapid quenching techniques. The temperature 0.3 T_L appears to be a lower limit, however, since the crystalline to amorphous transformation occurs in many of these alloys at temperatures greater than 0.3 T_L. It is suggested, by analogy with results on void formation in irradiated metals, that this low temperature limit is related to the low mobility of vacancies in these materials, although the mechanism of crystallization, or conversely amorphization, is not fully understood.     

Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

Internal photoemission of electrons was used to determine the band alignment in metal (Mg, Al, Ni, Cu, Au)-oxide-silicon structures with Al₂O₃- and ZrO₂-based insulators. For Al₂O₃- and ZrO₂ layers grown on Si by atomic layer deposition the barrier height between the Si valence band and the oxide conduction band was found to be 3.25 and 3.1 eV, respectively. Thermal oxidation of the Si/oxide stacks results in a barrier height increase to ≈4 eV for both cases due to formation of a silicate interlayer. However, there is a significant sub-threshold electron emission both from silicon and metals, indicating a high density of states in the band gap of the insulators. These states largely determine the electron transport across metal oxides and may also account for a significant dipole component of the potential barrier at the metal/ZrO₂ and metal/Al₂O₃ interfaces.     

Elasticity, thermal expansion and compressive behavior of Mg65Cu25Tb10 bulk metallic glass

The existence of special covalently bonded short-range ordering structures in a Mg₆₅Cu₂₅Tb₁₀ bulk metallic glass (BMG) is confirmed by thermal expansion and compression behavior. Under ambient conditions the linear thermal expansion coefficient obtained is almost constant in the glassy state with a value of 4.0 × 10⁻⁵ K⁻¹. By fitting the static equation of state at room temperature under ambient conditions we find the value for bulk modulus B of 48.7 GPa, which is in excellent agreement with the experimental study by pulse-echo techniques of 44.7 GPa. Unlike many bulk metallic glasses, such as Zr- and Pd-based, which bulk modulus is much larger than 100 GPa, the value B of Mg₆₅Cu₂₅Tb₁₀ BMG falls into the range of SiO₂ and fluorozirconate glass ZBLAN. Moreover, the elastic constant of the Mg₆₅Cu₂₅Tb₁₀ BMG is almost the same as those of ZBLAN. No evidence for the high-pressure phase transitions of the Mg₆₅Cu₂₅Tb₁₀ BMG has been found up to 31.19 GPa at room temperature.