Beam optics optimization of a negative-ion sputter source

A negative-ion sputter source has been studied in order to increase the beam intensity delivered by the Vivitron tandem injector. The aim was to characterize the influence on the beam intensity of some factors related to the configuration of the source such as the shape of the target holder, the target surface topography and the anode/cathode voltage. The paper reports the results carried out by experimentation on a test facility and on the injector itself as well as the investigations performed with computer simulations.     

HL-2M中性束负离子试验源磁场位形及引出结构模拟分析

采用CST电磁工作室和粒子工作室软件对负离子试验源的会切磁场、过滤磁场、电子偏转磁场的位形及引出束流的光学进行了模拟计算。通过扫描会切磁体、过滤磁体、电子偏转磁体的表面磁场参数,确定了最佳的磁体结构和运行参数：周边6圈会切磁体,会切磁体表面磁场4kG,过滤磁体表面磁场5.5kG,电子偏转磁体表面磁场2.5kG,引出电压5~20kV,加速电压50~160kV,引出负离子束的光学性能满足NBI注入要求。     

大功率RF 离子源阻抗匹配电路的设计与实现

在大功率RF 离子源中,激励器的作用是产生等离子体,阻抗匹配电路是激励器吸收RF 功率的关键。将激励器等效阻抗视为一个电阻和一个电感的串联,采用了一种由一个RF 变压器并和两个可调电容组成的阻抗匹配电路,给出了视RF 变压器为理想变压器时阻抗匹配电路的分析模型,推导了阻抗匹配时两个可调电容的电气参数。当激励器实验装置使用一个石英玻璃激励器时,搭建了一个阻抗匹配电路,成功地将RF 功率耦合进激励器并产生了等离子体。     

轴对称磁场的束流光学及其在ECR离子源中的应用

 带电粒子在轴对称磁场中一边沿着对称轴向前运动,一边绕对称轴旋转。所以横向运动可以分解为两部分：聚焦运动和子午面的旋转。因此,4维横向传输矩阵可以表示为聚焦矩阵和旋转矩阵的乘积。用旋转矩阵和聚焦矩阵重新推导了总的传输矩阵。然后给出了相应的相椭圆系数矩阵来进一步估算从ECR离子源引出束流的发射度.详细地讨论了束流分布函数的二次矩。     

射频离子源束流特性分析

介绍了为HL-2A 装置设计的引出束功率为1MW 的射频离子源研制情况。目前,在测试平台上,该离子源已经成功引出了束能量和束电流分别为35keV 和12.4A、束质子比为79%、脉宽为100ms 的氢离子束,达到了其设计束功率的44%。用红外热成像的方法测量了离子束能量密度分布。结果表明,在距离引出系统地电极 1.3m 处,束密度分布遵循高斯分布。引出束的最佳导流系数为1.689×10^–6A•V^-3/2 左右,随射频功率改变有较小的变化。根据这些实验结果,采取了相关改进措施来改善离子源的引出束性能。     

Design of magnet and control of the beam emittance for Penning H^- ion source

The design requirement and principle of the deflection magnet for Magnetron and Penning H- ion source are discussed. It is proved that there exists a maximum emittance for the beam that may be transformed by the magnet into a state with equal Twiss parameters of αr =αy and βr =βy, which is the requisite condition to get a minimum emittance at the entrance of RFQ after transporting by a LEBT with solenoids. For this maximum emittance, the corresponding magnetic field gradient index is 1.     

Design of magnet and control of the beam emittance for Penning H- ion source

The design requirement and principle of the deflection magnet for Magnetron and Penning H- ion source are discussed.It is proved that there exists a maximum emittance for the beam that may be transformed by the magnet into a state with equal Twiss parameters of αr=αy and βr =βy,which is the requisite condition to get a minimum emittance at the entrance of RFQ after transporting by a LEBT with solenoids.For this maximum emittance,the corresponding magnetic field gradient index is 1.     

Development of exploding wire ion source for intense pulsed heavy ion beam accelerator

A Novel exploding wire type ion source device is proposed as a metallic ion source of intense pulsed heavy ion beam (PHIB) accelerator. In the device, multiple shot operations are realized without breaking the vacuum. The basic characteristics of the device are evaluated experimentally with an aluminum wire of diameter 0.2 mm and length 25 mm. A capacitor bank of capacitance 3 μF and a charging voltage of 30 kV was used, and the wire was successfully exploded by a discharge current of 15 kA with a rise time of 5.3 μs. Plasma flux of ion current density around 70 A/cm² was obtained at 150 mm downstream from the device. The drift velocity of ions evaluated by a time-of-flight method was 2.7×10⁴ m/ s, which corresponds to the kinetic energy of 100 eV for aluminum ions. From the measurement of the ion current density distribution, the ion flow is found to be concentrated toward the direction where the ion acceleration gap is placed. From the experiment, the device is found to be acceptable for applying the PHIB accelerator.     

Penning型负氢离子源诊断

为了给小型医用回旋加速器提供负氢离子,研制了一台Penning型负氢离子源。采用发射光谱法对该负氢离子源进行了诊断,同时结合离子源功率变化对离子源工作状态进行了分析。实验测量了不同氢气流量、离子源弧流及磁场条件下,该离子源等离子体氢原子巴尔末系中前三条谱线的相对光强和离子源功率变化,分析了不同工作条件对离子源工作状态的影响。结果表明：在可调节范围内,该离子源的工作状态主要受氢气流量的影响,对离子源弧流及磁场的变化不敏感。     

ECR ion source based low energy ion beam facility

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion beams ranging from a few keV to a few MeV for research in materials sciences, atomic and molecular physics is described. One of the important features of this facility is the availability of relatively large currents of multiply charged positive ions from an electron cyclotron resonance (ECR) source placed entirely on a high voltage platform. All the electronic and vacuum systems related to the ECR source including 10 GHz ultra high frequency (UHF) transmitter, high voltage power supplies for extractor and Einzel lens are placed on a high voltage platform. All the equipments are controlled using a personal computer at ground potential through optical fibers for high voltage isolation. Some of the experimental facilities available are also described.     

等离子体源离子注入过程中半圆形碗状样品的两维温度分布

等离子体源离子注入过程(PSII)中样品温度是一个非常重要的参量。由于注入到样品上的能量很大，导致样品温度很高，所以在实验中获知样品的温度分布有着很重要的意义。本文利用热传导方程建立了半圆形碗状样品内部温度升高模型，研究样品内温度演化过程。以注入离子束流作为能量输入项，热辐射为能量损失项，并考虑了热辐射过程中样品的形状因子的影响。考察了离子注入过程中样品上所施加负偏压的脉冲宽度和频率对样品温度分布的影响。研究结果显示，脉冲频率达到一定值后，样品温度不再随频率增加而升高。     

射频离子源离子束成分光谱测量

为HL-2A 装置中性束注入器研制了引出束功率为1MW 的射频离子源。在测试平台上,实验离子源已经成功引出了束能量和束电流分别为35keV 和12.4A、束质子比为79%、脉宽为100ms 的氢离子束,达到了设计束功率要求的44%。在射频离子源实验平台上,利用多普勒频移光谱方法测量了离子源引出束流成分比例,对比了束流成分和射频离子源引出束流之间的关系。实验数据分析表明,在10A 引出束流的情况下,离子流成分 H⁺ ₁、H⁺ ₂ 和H⁺ ₃ 分别为75%、18%和7%。并且当引出束流从3.3A 升至10.4A 时,H⁺ ₁ 从37%升至78%,而H⁺ ₃ 则从19%降至9%。     

Penning型负氢离子源诊断

 为了给小型医用回旋加速器提供负氢离子,研制了一台Penning型负氢离子源。采用发射光谱法对该负氢离子源进行了诊断,同时结合离子源功率变化对离子源工作状态进行了分析。实验测量了不同氢气流量、离子源弧流及磁场条件下,该离子源等离子体氢原子巴尔末系中前三条谱线的相对光强和离子源功率变化,分析了不同工作条件对离子源工作状态的影响。结果表明：在可调节范围内,该离子源的工作状态主要受氢气流量的影响,对离子源弧流及磁场的变化不敏感。     

微型电子回旋共振离子推力器离子源结构优化实验研究

微型电子回旋共振(ECR)离子推力器可满足微小航天器空间探测的推进需求. 为此, 本文开展直径20 mm的微型ECR离子源结构优化实验研究. 根据放电室内静磁场和ECR谐振区的分布特点, 研究不同微波耦合输入位置对离子源性能的影响, 结果表明环形天线处在高于ECR谐振强度的强磁场区域时, 微波与等离子体实现无损耦合, 电子共振加热效果显著, 引出离子束流较大. 根据放电室电磁截止特性, 结合微波电场计算, 研究放电容积对离子源性能的影响, 实验表明过长或过短的腔体长度会导致引出离子束流下降甚至等离子体熄灭. 经优化后离子源性能测试表明, 在入射微波功率2.1 W、氩气流量14.9 μg/s下, 可引出离子束流5.4 mA, 气体放电损耗和利用率分别为389 W/A和15%.     

RF离子源引出特性的研究

为了使RF离子源具有良好的引出特性,测试了吸极几何参数、振荡器板压和引出电压对离子源聚焦度的影响,对实验结果进行了分析。在其它参数不变的情况下,吸极的外径D与内径d之比存在最佳值,增加D/d,有利于过聚焦的离子束恢复聚焦状态。吸极的长度为L,石英套管比吸极长l。当l/D增大时,聚焦度上升,引出束流下降。L/d之比减小时,聚焦度增大。当L/d小于4时,聚焦度增加趋势变缓。综合考虑聚焦度、引出束流和气压,D/d,l/D,L/d适宜的选择范围分别为1.6～2.1,0.7～1.1,4～7。增加振荡器功率会使离子束呈弱聚焦,而增加引出电压会使离子束呈过聚焦。振荡器功率和引出电压都存在最佳值。     

Characteristics of Cu films prepared using a magnetron sputter type negative ion source (MSNIS)

Cu films have been deposited at room temperature using a magnetron sputter type negative ion source (MSNIS) at various conditions. By the principle of operation, the negative ion production probability is the function of the Cs flow rate in MSNIS. A set of films were deposited at different Cs flow rates and compared with normal-magnetron-sputtered films. The long-throw method was combined to MSNIS to increase the directionality and the negative ion arrival ratio. The film properties, such as resistivity, surface roughness, film structure, and step coverage on high aspect-ratio trench samples were obtained and analyzed using SEM, SIMS and AFM methods. The results showed that the resistivity of the film improved toward the theoretical values from 2.3 to 1.8 μΩ cm for the 100 nm thickness films. AFM scan of the film showed surface roughness was improved using MSNIS by ion bombarding effect. Depth profiling SIMS result showed Cs level resided in the film was less than 1 × 10¹⁹ at./cm³. As an application, Cu seed layer deposition on trench structure was investigated. Cross-sectional SEM was employed to see the step coverage of the film. The biasing effect was investigated. The different biasing conditions resulted as the clearly different coverage mode.     

6.4 GHz ECR ion source at VECC

The 6.4 GHz ECR ion source that was indigenously developed a few years ago has been operating continuously for injecting oxygen and neon beams to the cyclotron since 1997. VEC-ECR is a single stage high magnetic field ion source provided with a negatively biased electron repeller placed on the axis, near the injection mirror point. The supply of cold electrons and use of low mass mixing gas improve the stability of ECR plasma. Very recently, the effect of aluminum oxide coating on the copper plasma chamber wall has been studied. The plasma chamber wall was coated with aluminum by vacuum evaporation method and then exposed to oxygen gas to form aluminum oxide. It was noticed that the process substantially shifts the charge state distribution to the higher charge state with an enhancement of ion current by an order of magnitude. With the aluminized plasma chamber, the VEC-ECR can now produce 12 μA of O⁷⁺, 6.5 μA of Ar¹²⁺, 1.5 μA of Kr²⁰⁺ and 1.0 μA of Xe³¹⁺.     

高频离子源等离子体的光谱诊断

采用发射光谱法研究了高频离子源的等离子体性质。该离子源应用于ZF-200keV中子发生器中,是一种电感耦合型无极环形放电高频离子源。实验采用绝对定标后的光学多道分析系统测定了离子源等离子体在不同阶段氢原子巴耳末谱线系中前三条谱线的强度,并采用部分局部热力学平衡状态的理论,计算出了相应阶段高频离子源等离子体的电子温度、氢原子浓度、氢离子浓度等参数,并进行了简要分析。     

半圆形容器等离子体源离子注入过程中离子动力学的两维PIC计算机模拟

利用两维particle-in-cell方法研究了半圆形容器表面等离子体源离子注入过程中鞘层的时空演化规律. 详尽考察了鞘层内随时间变化的电势分布和离子密度分布规律,离子在鞘层中的运动轨迹和运动状态,得到了半圆容器内、外表面和边缘平面上各点离子注入剂量分布规律,获得了工件表面各点注入离子的入射角分布规律. 研究结果揭示了半圆容器边缘附近鞘层中离子聚焦现象,以及离子聚焦现象导致工件表面注入剂量分布和注入角度分布存在很大不均匀的基本物理规律. 关键词： 等离子体源离子注入 鞘层 两维particle-in-cell方法 离子运动轨迹     

离子推力器加速栅极离子运动规律的数值研究

 以离子推力器栅极组件为研究对象,建立了3维数值模型,应用网格质点法研究了束流离子和电荷交换离子在栅极组件间的运动规律。根据给定的几何和物理参数,模拟得到了栅极组件附近的电势分布、束流离子和电荷交换离子的运动轨迹、速度相空间分布以及加速极电流等。模拟结果表明：加速栅极下游产生的电荷交换离子在电场的作用下会加速撞击加速栅极下游面,是造成加速栅极腐蚀的主要因素;栅极间产生的电荷交换离子会撞击到加速栅极孔壁面,使加速栅极孔逐渐增大。