Influence of the Tl- and Hg-content on magnetic and transport properties of the Pb, Sr-doped Tl-1223 and Hg-1223 superconductors

The effects of the thallium and mercury content x on the as-sintered and post annealed samples of M_xPb_0.4Sr_1.6Ba_0.4Ca₂Cu₃O_8+δ {M: Tl (0.32≤x≤0.74) or Hg (0.18≤x≤0.68)} have been studied by magnetization and transport measurements. For Tl-1223 we have found the optimum Tl doping level to be x=0.53 regarding the grain properties, the content of superconducting phase, the first penetration field H_pl^wl, the transport (J_c^tr), magnetic intergrain (J_c^M) and intragrain (J_c^g) critical current densities. The critical temperature T_c of the as-sintered Tl-1223 sample decreased with increasing Tl content. Post-annealing in oxygen improved the T_c for Tl contents of x≥0.53 and had generally positive effects on the critical current densities. The intergrain properties of the Hg-1223 samples were much worse than those of the Tl-based superconductors.     

Estimation of Jc(B) dependence from self-field alternating current (AC) losses measured on Bi-2223/Ag tapes

Transport AC losses measured in self-field conditions on multifilamentary Bi-2223 tapes are often found to be lower than those calculated within the framework of the critical state model for a bulk wire with elliptical cross section, though generally higher than predicted for a strip. This effect is sometimes ascribed to the non-ideal geometry of the tapes, which does not exactly reproduce either shape. Here we propose an alternative explanation assuming that the critical current density of superconducting material depends on magnetic field. In practice, we analyzed the AC loss curve and deduced different I_c values for the individual data points, using the standard Norris equation for elliptical conductor. This gives the relation between ‘calculated' I_c and the self-field associated to AC transport current, which can be regarded as an alternative way to qualify the dependence of J_c on magnetic field. Important is that this procedure covers the range of fields below the self-field at I_c where the measurement in background DC field can not be used to determine J_c(B).     

Calculation of the critical currents of Bi(2223)/Ag tapes and coils with reduced anisotropy in Ic(B) characteristic — effect of different proportional representations of the filaments oriented parallel and perpendicularly to the tape surface

A mathematical model was developed to allow for the prediction of critical currents in Bi(2223)/Ag-sheathed tapes that consist of two groups of filaments, having crystalline texture (c-axis) predominantly in two directions orthogonal to each other and to the length of the conductor (filaments oriented parallel and perpendicular to the tape surface). Using the theory presented, it is possible to estimate the upper limit of critical currents in the tapes prepared with a two-axial rolling technique. Magnetic field and angular dependencies of critical currents were obtained at 77 K measuring tapes with various proportional representations of filaments oriented in both preferred directions, i.e., the parallel and perpendicular directions. The results of calculation indicate that the anisotropy in the I_c(B) characteristic should be reduced considerably using the two-axial rolling. Unfortunately, the effect of anisotropy reduction is accompanied by simultaneous decrease in the current-carrying capacity of the tapes. The data obtained for short tape samples were utilised to estimate the critical currents of the individual turns of a small cylindrical magnet, assembled of eight pancake coils. It is shown that only a slight increase in the critical current of the magnet can be expected if the winding should be made of the tape with reduced anisotropy in the I_c(B) characteristic. The factors that limit the increase of the magnet critical current are discussed in detail.     

Bi2223/Ag和YBCO高温超导带材在交流过电流冲击下的失超及恢复特性研究

采用交流冲击实验装置测量了在不同交流过电流、持续交流工作电流及冲击时间情况下,不同散热条件下Bi2223/Ag和YBCO高温超导带材的电压、电流和温度随时间变化曲线,分析了冲击期间和冲击后带材各参数变化及失超恢复时间与散热条件和冲击参数的关系。研究结果表明:带材在交流过电流冲击下的失超和恢复过程主要取决于冲击能量和冲击过后带材内发热与散热的竞争效应。     

Bi—2223带材在拉伸应力下的临界电流

研究了不锈钢加强的Bi-2223/Ag高温超导带材在不同的拉伸应力下临界电流的变化情况。采用改造后的拉伸设备,在温度77K下对超导带材施加拉伸应力的同时,利用四引线法测量带材的临界电流,得到了超导带材的应力—应变曲线以及临界电流—应变曲线。利用理论公式计算了应力对超导带材临界电流的影响,与实验结果进行对比,并对两者的差别进行了分析。     

拉伸应变对Bi2223/Ag带材Ic不均匀性的影响

研究了Bi2223/Ag带材的Ic和n值沿带长方向的不均匀性在拉伸应变下的变化。结果表明,Ic和n值的大小并不是逐点一一对应的;当应变小于不可逆拉伸应变时,Ic随应变增加缓慢下降,n值随应变增加缓慢下降并有小幅震荡;Ic的均匀度随应变增加基本上没有变化,n值的均匀度随应变增加变好并有小幅振荡,而且变化范围很小。     

高温退火对蓝宝石基片的表面形貌和对CeO2缓冲层以及Tl-2212超导薄膜生长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO₂缓冲层和Tl-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长,表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石 关键词： Tl-2212超导薄膜 蓝宝石 缓冲层     

Largely improved photocatalytic properties of Ag/tetrapod-like ZnO nanocompounds prepared with different PEG contents

Ag/tetrapod-like ZnO whisker (T-ZnOw) nanocompounds were successfully synthesized using photodeposition method. Remarkable improvements in photocatalytic property for all the nanocompounds are observed, while the extents of the improvements increase with increasing polyethylene glycol (PEG) contents. Various tests were carried out to determine the mechanism for the greatly improved photocatalytic property. And it is found that PEG can reduce Ag⁺ into Ag under UV irradiation, which can be subsequently deposited on the surface of T-ZnOw as nanoparticles. The conclusion that the heterostructure of Ag/T-ZnOw nanocompound contributes to its greatly enhanced photocatalytic property is proposed and later validated by carefully discussing the photocatalytic mechanism.     

Fabrication and characterization of Ag intermediate transparent and conducting TiON/Ag/TiON multilayer films

Silver (Ag) intermediate transparent and conducting TiON/Ag/TiON (TAgT) films were deposited by RF and DC magnetron sputtering on glass substrates. Changes in the optoelectrical properties of the films were investigated as a function of Ag thickness. The thickness of the Ag film varied from 5 to 20 nm.In XRD patterns, the TAgT films showed characteristic diffraction peaks for Ag (111), (200), (220), and (311) planes, while peaks for TiON were not observed. Thus, it was concluded that the Ag interlayer did not affect the crystalline structures of the upper TiON films. However, electrical resistivity was dependent on the thickness of the Ag interlayer. For TiON 50/Ag 20/TiON 30 nm films, electrical resistivity decreased to as low as 3.3 × 10^− 4 Ωcm. The optical transmittance was also influenced by the Ag interlayer. As the Ag thickness increased, the optical transmittance decreased to as low as 45% for TiON 50/Ag 20/TiON 30 nm films. From observed figure of merit and work function, it is concluded that a TAgT film with a 5 nm-thick Ag interlayer is a good candidate for use as a transparent electrode in OLEDs and flat panel displays.     

Electrical switching in germanium telluride glasses doped with Cu and Ag

Electrical switching in germanium telluride glasses containing metallic atoms (Cu and Ag) has been investigated. All these glasses are found to exhibit memory switching. The switching fields of these glasses are compared with the thermal parameters evaluated from DSC studies and the results are explained on the basis of the thermal model. The composition dependence of the switching field and the thermal parameters show interesting variations at the critical compositions which correspond to the rigidity percolation and the chemical thresholds of these glasses. Received: 11 January 1999 / Accepted: 14 April 1999 / Published online: 14 July 1999     

磁控溅射不同厚度银膜的微结构及其光学常数

用直流溅射法在室温K9玻璃基底上制备了8.2nm—107.2nm范围内不同厚度的Ag薄膜，并用X射线衍射及计算机辅助优化程序对薄膜的微结构和光学常数进行了测试分析. 结构分析表明：制备的Ag薄膜均呈多晶状态，晶体结构均呈面心立方；随着膜厚的增加，薄膜的平均晶粒尺寸逐渐增大，晶面间距逐渐减小. 计算机辅助优化编程计算的薄膜光学常数分析表明：在波长550nm处，当膜厚小于17.5nm时，随着膜厚的增加，折射率n快速减小，消光系数k则快速增大；当膜厚大于17.5nm时，n和k逐渐趋于稳定. 关键词： 直流溅射镀膜 银膜 微结构 光学常数     

Influence of Ag thickness on the structural,optical, and electrical properties of the SnS/Ag/SnS trilayer films for solar cell application

We fabricated the SnS/Ag/SnS (SAS) trilayer thin films by a sputtering method at 200 $°C$. The structural, optical, and electrical properties of the films were studied by varying the Ag interlayer thickness from 9 to 27 nm. The EDS analysis revealed that all SAS trilayer films showed an increase in the atomic percentage of Ag from 1.87 to 6.18. The X-ray diffraction studies confirmed that SAS films with Ag-18 nm thickness showed a preferred (111) peak of the SnS with improved crystallinity. The optical absorption coefficient of the SAS films increased by a factor of 18 when compared to the SnS films without Ag. Also, the optical band gap decreased from 1.53 to 1.28 eV with Ag thickness. All SAS films exhibited the p-type conductivity with increased hole-concentration from 1.94 $\times$ ${10}^{14}$ to 4.15 $\times$${10}^{18}$cm⁻³ and also the mobility from 1.31 to 81.6 cm². V⁻¹s⁻¹.     

用MAEAM法计算Ag/Ni的界面能

采用改进分析型嵌入原子法计算了Ag(111)//Ni(001)和Ag(001)//Ni(111)扭转界面的能量，结果表明：对Ag(111)//Ni(001)界面，当扭转角等于0°（或30°）时界面能最小，这一择优扭转角取向和Gao等人的实验结果一致；同样，对Ag(001)//Ni（111）界面，当扭转角等于0°（或30°）时界面能最小；从界面能最小化考虑，Ag(001)//Ni(111)扭转界面的择优扭转角也为0°（或30°）. 关键词： Ag/Ni界面 界面能 计算 改进分析型嵌入原子法 近重合位置点阵     

Temperature dependence of transport ac losses in Bi-2223/Ag multifilamentary tapes

Temperature dependence of transport ac losses in two Bi-2223/Ag multifilamentary tapes with different dc current–voltage characteristics was measured using a lock-in technique at power frequencies. At each temperature, different criteria for critical current determination were used. Comparisons of normalised ac losses with predictions of theoretical models for a tape with elliptical cross-section and a thin strip were made. It was found that the form of the current–voltage characteristic and the critical current criterion play an important role in comparison with theoretical data. A new normalisation procedure of ac loss data is proposed.     

Electrical and magnetic properties of hot extruded Bi-2223/Ag concentric tapes

Summary In this work we report on the anisotropic physical properties of silver-sheathed Bi-2223 tapes fabricated by means of hot extrusion and repeated pressing and sintering processes. The obtained Bi-2223/Ag short tapes, having critical current densitiesJ _c of 20–30 kA/cm² at 77 K, 0 T, were measured in external magnetic fields up to 0.5T applied in two different orientations (i.e. μ₀H‖(a,b)-planes and μ₀H ⊥(a,b)-planes). The magnetic characterizations were performed in a wide range of temperatures and magnetic fields to study the first magnetization curve of tapes evaluating the lower critical fields μ₀H_c1⊥ab and ⊥₀H_c1#x2016;ab and their dependences on temperature. TheJ _c values at different fields in the temperature range 4.6–90 K, calculated from the magnetization data by the critical state model, are also presented. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

基于ZnSe/Ag/ZnSe可见区透明导电薄膜

利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020 cm－3,电子迁移率和电阻率分别为17.22 cm2 V－1 s－1和2.867×10－5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.     

ZnO/Ag纳米复合物的制备及光学性质

采用ZnO纳米晶表面还原Ag+的方法合成了ZnO/Ag纳米复合物,并研究了其光学性质.透射电镜和XRD谱表征了ZnO/Ag纳米复合物的晶体形貌和结构,吸收光谱和荧光光谱证明ZnO和Ag之间存在电子传递.在325 nm激光激发下观察到了ZnO/Ag纳米复合物的表面增强共振拉曼散射.     

基于HfO2的阻变存储器中Ag导电细丝方向和浓度的第一性原理研究

采用基于密度泛函理论的第一性原理方法, 研究了基于HfO₂的阻变存储器中Ag 导电细丝浓度以及方向性. 通过计算Ag杂质5种方向模型的分波电荷态密度等势面图、形成能、 迁移势垒和分波电荷态密度最高等势面值, 发现[-111]方向最有利于Ag导电细丝的形成, 这对器件的开启电压、形成电压和开关比有很大影响. 本文基于最佳的[-111]导电细丝方向, 设计了4 种Ag 浓度结构. 计算4种Ag浓度结构的分波电荷态密度等势面图, 得出Ag浓度低于4.00 at.% 时晶胞结构中无导电细丝形成且无阻变现象. 当Ag浓度从4.00 at.%增加到4.95 at.% 时, 晶胞结构中发现有导电细丝形成, 表明Ag浓度高于4.00 at.%时, 晶胞中可以发生阻变现象. 然而, 通过进一步对比计算这两种晶胞结构中Ag的形成能、分波电荷态密度最高等势面值、总态密度与Ag的投影态密度发现, Ag浓度越大, 导电细丝却不稳定, 并且不利于提高阻变存储器的开关比. 本文的研究结果可为改善基于HfO₂的阻变存储器的性能提供一定理论指导.     

ITO-free inverted organic solar cells fabricated with transparent and low resistance ZnO/Ag/ZnO multilayer electrode

Inverted organic solar cells (OSCs) based on poly (3-hexylthiophene) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ) were fabricated with optimized ZnO/Ag/ZnO multilayer and conventional indium–tin oxide (ITO) cathode electrodes and their performance was compared. The ZnO/Ag/ZnO multilayer films showed sheet resistances in the range 3.6–3.9 Ω/sq, while ITO exhibited 14.2 Ω/sq. On the one hand, the carrier concentration gradually decreased from 1.74 × 10²² to 4.33 × 10²¹ cm⁻³ as the ZnO thickness increased from 8 to 80 nm, respectively. The transmittance of the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) films was ∼95% at 550 nm, which is comparable to that of ITO (∼96%). The multilayer films were smooth with a root mean square (RMS) roughness of 0.81 nm. OSCs fabricated with the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) film showed a power conversion efficiency (2.63%) comparable to that of OSCs with a conventional ITO cathode (2.71%).     

Fabrication of Ag/TiO2 nanotube array with enhanced photo-catalytic degradation of aqueous organic pollutant

In this paper, the fabrication of Ag/TiO₂ nanotube arrays and their photo-catalytic activity have been studied. The SEM, TEM and XRD were performed to characterize the morphology and crystalline phase of the TiO₂ nanotube array and Ag/TiO₂ nanotube array. Ag nanoparticles with different loadings, which are aimed to suppress the electron–hole recombination so as to enhance the photo-catalytic oxidation efficiency, were systematically coated onto TiO₂ nanotubes. The photo-catalytic activity of these nano-materials was evaluated by the degradation of two different pollutants: methyl orange and glyphosate. The effects of various parameters, such as the amount of the photo-catalyst, the illumination time, and pH value on the photo-catalytic oxidation activity, were studied.