太阳能集热和辐射制冷复合表面的研究

提出了一种太阳能集热和辐射制冷的光谱选择性复合表面,其在太阳辐射波段(0.2~3μm)和辐射制冷"大气窗口"波段(8~13μm)具有高吸收(发射)率,而在除此之外的其余波段(3~8μm、13~25μm)具有低吸收(发射)率。初步制备了该复合表面并对其进行光谱测试;建立了数学模型并进行了复合表面平衡温度的模拟计算;搭建了太阳能集热和辐射制冷复合装置并实验测试了复合表面在白天与夜间的平衡温度;搭建了太阳能集热和辐射制冷复合系统并进行了白天集热性能测试。     

电子与离子碰撞过程中辐射复合截面的相对论理论研究

在相对论理论框架下,研究了自由电子与离子碰撞的辐射复合过程.在分析影响单电子体系(类H+离子及碱金属离子)辐射复合截面主要因素的基础上,总结出了辐射复合截面在不同情况下的变化规律.     

辐射复合截面的扭曲波计算

采用非相对论量子计算方法计算了电子与高电荷态离子碰撞的辐射复合截面, 其中连续态电子的波函数是由扭曲波近似方法(DWBE)获得. 计算了低能电子与中、低核电荷的高电荷态离子(类H和类Li)的辐射复合截面, 并与采用有效电荷的库仑波计算结果进行了比较, 说明了扭曲波计算的重要性.     

电介质材料辐射感应电导率的模型研究

在传统的Rose-Fowler-Vaisberg(RFV)模型基础上引入辐射激发项，解释了辐射感应电导率与辐射剂量率的指数关系及范围.利用改进后的模型分析了不同辐射条件下材料感应电导率的变化情况，其结果表明，辐射剂量率主要影响感应电导率的大小，对感应电导率的整体变化趋势无显著影响，决定感应电导率长时间衰减的是材料载流子复合率.     

He-Ne激光对增强UV-B辐射拟南芥抗氧化系统的损伤修复

以培养6周左右的拟南芥为材料,采用UV-B辐射(剂量1 KJ/m2/d)和He-Ne激光器(波长632.8 nm,输出功率5 mW·mm2,辐照时间60 s)对材料进行处理,分成CK(没有经过UV-B或激光辐照)组、B(UV-B辐射)组、BL(UV-B和激光复合处理)组和L(激光辐照)组4个不同处理组.结果表明:增强的...     

高离化态金离子的辐射复合及其退激发过程的理论研究

利用基于多组态Dirac-Fock方法的程序包GRASP92和RATIP以及最新发展的RERR06程序,详细计算了高离化态金离子(类镍Au51+、类铜Au50+和类锌Au49+)俘获一个自由电子到nl(n=4—8,l=0—3)壳层的辐射复合谱以及相应的辐射退激发谱.理论计算的辐射复合谱很好地重现了实验谱.研究结果表明:对类镍Au51+、类铜Au50+和类锌Au49+而言,将一个自由电子俘获到n=4壳层的概率最大;在辐射复合过程之后,处在n=4壳层的俘获电子的辐射退激发谱线最强,并且体现了整个辐射退激发谱的主要特征.     

激光诱导Al等离子体连续辐射的时间分布

用Ar作环境气体,压强固定在10kPa,每个激光脉冲能量为115mJ,利用时空分辨技术,采集激光烧蚀Al靶产生的等离子体辐射的时间分辨谱。分析了Al等离子体连续辐射特征。简要讨论了激光诱导等离子体连续辐射的产生机理。提出了原子对激光诱导等离子体连续辐射共振吸收理论。激光诱导等离子体的连续辐射的主要机制是轫致辐射和复合辐射,在激光脉冲作用到靶面瞬间,轫致辐射占主导地位;等离子体演化初期,复合辐射和轫致辐射共同产生等离子体连续辐射;等离子体演化后期,连续辐射主要复合辐射产生的。Al原子对连续辐射的共振吸收是选择性的,这是改变连续辐射按波长“平滑”分布的主要机制。     

半导体器件的辐射效应

抗核辐射电子学对于国防和经济建设都有重大意义。为了研究出使电子器件和系统具有抗辐射能力的技术措施,就必须首先研究辐射对电子器件和系统的影响(辐射效应)以及辐射如何对电子器件和系统产生影响(损伤机制)。本文评述了辐射环境、辐射效应和损伤机制、模拟实验方法和设备以及发展概况。     

HL—1装置电流上升段辐射与杂质特性

托卡马克等离子体中的杂质会影响托卡马克的放电品质及等离子体特性。许多理论和实验对杂质的产生和输运做了深入详细的研究。等离子体电流起始阶段,由于约束性能不好,会引起大量的杂质产生,辐射损失增大是杂质增加引起的直接后果。杂质辐射是等离子体辐射的主要组成部分之一,等离子体线辐射功率～Z_(eff)~6,复合辐射功率～Z_(eff)~4,轫致辐     

类氢U91+离子的辐射复合及其辐射退激发过程的理论研究

基于多组态Dirac-Fock理论方法,利用GRASP92和RATIP以及在此基础上最新发展的RERR06程序,对类氢U⁹¹⁺（1s）离子的辐射复合截面以及辐射退激发过程进行了详细的理论研究.系统地计算了具有确定能量的连续电子被处于基态的类氢U⁹¹⁺（1s）离子俘获到nl （1≤n≤8, 0≤l≤6）轨道形成类氦U⁹⁰⁺（1snl）离子的辐射复合截面,并研究了这辐射复合末态退激发谱的相对强度.研究发现,类氢U⁹¹⁺（1s）离子辐射复合到不同轨道的截面随其主量子数的增大而显著减小;同时,辐射复合末态的退激发对Kα谱线的相对强度有重要影响. 关键词： 辐射复合 多组态Dirac-Fock理论方法 辐射退激发     

X-ray stimulated luminescence in MgO

Studies have been made of the emission spectrum of MgO crystals induced by X-irradiation at 90 K. Two bands (half-widths ～0.8 eV) were observed to peak at 4.95 and 3.2 eV, respectively, in high purity crystals. Doping with 100 ppm or greater of Fe, Co, Cr, Cu, Mn, and Ni suppressed the luminescence, though in the MgO:Ni crystal the 2.3 eV Ni²⁺ band due to the ¹T_2g→³A_2g transition was observed. In deuterium-doped crystals the ratio of the intensity of 3.2–4.95 eV emission was found to be 1.2 as compared to 8 for the undoped crystals. Prior exposure of the pure crystals to ionizing radiation enhances the 4.95 eV band by a factor of three while not affecting the 3.2 eV band. This enhancement of intensity decays in several stages upon standing at room temperature in a way that reflects the thermal stability of the various components of the composite V-band absorption. These facts together with the observation that the 210 K thermoluminescence peak is composed entirely of 4.95 eV emission indicate that this luminescence band is associated with the recombination of an electron with a hole located in a V-type center, i.e. O?□ + e → (O²?□)1 → O²?□ + 4.95 eV, where the square indicates that the perturbing positive ion vacancy is adjacent to the oxugen ion which has captured the hole. In MgO:Li⁺, which exhibits no V-type centers upon irradiation, the 4.95 eV band was absent and a 2.9 eV emission which may be associated with recombination at the [Li]⁰ center was observe.     

InP中和C带有关深能级的近红外光致发光

本文用红外光致发光方法研究了InP中与C带有关的深能级的性质和起源。峰值位于价带上0.34eV(77K)附近的宽谱带普遍存在于不同方式生长的InP外延层和掺Sn与不掺杂的衬底中,且与P空位引起的复合缺陷有关。 通过红外光致发光强度对温度的依赖关系得到C带的热激活能为0.17eV。这刚好与采用σ函数来描述深能级的Locovsky模型相吻合,光谱线型与温度猝灭的量子力学位形坐标模型拟合,得到与C带有关的深能级hv=0.02eV,S=8。     

PbWO4闪烁晶体的发光动力学模型

在对PbWO₄闪烁晶体的光谱特性、发光衰减及其温度依赖以及热释光的研究基础上,并结合理论计算,提出了PbWO₄晶体发光的动力学模型,给出了PbWO₄晶体的基本能带结构及激子发光中心能态、陷阱能级在能隙中的位置。用此模型可以完整说明PbWO₄的发光过程,特别是导致室温下发光效率低的原因。最后还对其主发射成分蓝、绿发光中心的起源作了简要讨论。     

GaN深中心Zn的低温瞬态研究

本文研究了GaN:Zn的低温瞬态过程,同时测量了衰减中的时间分辨光谱,从两者测量的结果得出:2.89eV的光致发光寿命为300ns(2K).实验证实,Zn作为发光中心的同时也引起一些非辐射陷阱.2.89eV的瞬态曲线可分为两部分,在短时范围(1μs)内基本上是指数形式,可归结为导带中光激发的电子和束缚在ZnGa受主上空穴的复合.在长时范围(t>>1μs)内瞬态曲线则偏离了指数规律,相当好地符合Becqureal经验公式.     

稀土离子掺杂Ⅲ-Ⅴ族半导体的发光

稀土离子掺杂Ⅲ-Ⅴ族半导体的发光是近年来开展起来的新的研究领域.在GaAs,InP和GaP等材料中,用离子注入、LPE、MBE、MOCVD以及单晶生长等方法掺杂Er、Yb和Nd等稀土离子,得到了尖锐稀土离子的特征发光.这些发光来自占据正常立方格点和非立方格点的稀土离子的内部4f能级跃迁,其发光行为与掺杂条件关系很大.这种稀土一半导体材料已开始用来制备具有稳定发射波长的发光和激光器件.     

ESR and optical spectroscopy of copper-doped PLZT electro-optic ceramics

2+ spectra in axial and cubic crystal fields. Cu²⁺ substitutes for Ti⁴⁺ and the excess charge can be compensated by La³⁺ on a nearest-neighbor site, thus creating axial symmetry. The centers of cubic symmetry are those where the charge is compensated in distant spheres. In contrast to pure PLZT, PLZT:Cu exhibits a new luminescence band peaking at 1.18 eV. This emission is ascribed to the ²T₂(D)→²E(D) transition of Cu²⁺(3d⁹) which can be excited either in the resonant 1.87 eV band or via charge-transfer excitation bands at 2.40, 2.57, and 3.03 eV. The absorption band at 1.45 eV is assumed to be that of Cu⁺ ions. Annealing in hydrogen and in oxygen atmospheres caused decrease and restoration, respectively, of the ESR and luminescence intensities as a consequence of Cu²⁺ conversion into Cu¹⁺ and vice versa. Received: 14 November 1997/Accepted: 8 December 1997     

Evidence for exciton binding at Ni impurity sites in ZnSe

A broad charge transfer band is observed in the photoluminescence excitation (PLE) spectrum of the 2.5 μ Ni²⁺ luminescence in ZnSe : Ni. This band lies above the highest energy d-d excitation bands and exhibits a ZPL at 1.8163 eV and LO(#38;0lambda;) phonon replicas at higher energy. In contrast, PLE spectra of Co²⁺ luminescence in ZnSe:Co contain only d-d excitation bands. The charge transfer band in ZnSe:Ni is interpreted as evidence for bound exciton formation at the Ni site. The recombination energy of this exciton is transferred efficiently to the excited d-band states of the Ni ion, leading to characteristic Ni²⁺d-d luminescence.     

A time-resolved photoluminescence study of amorphous phosphorus

Radiative recombination in amorphous phosphorus is studied by the technique of time-resolved photoluminescence. In the first 200 ns following excitation the luminescence band moves from 1.36 to 1.18 eV. The position of the band is also shown to depend on the energy of exciting photons. These observations are discussed in terms of Coulomb interaction and thermalisation, and their implication for a detailed modelling of excitation and radiation assessed.     

Luminescence study of Si/Ge quantum dots

We present a photoluminescence (PL) study of Ge quantum dots embedded in Si. Two different types of recombination processes related to the Ge quantum dots are observed in temperature-dependent PL measurements. The Ge dot-related luminescence peak near 0.80 eV is ascribed to the spatially indirect recombination in the type-II band lineup, while a high-energy peak near 0.85 eV has its origin in the spatially direct recombination. A transition from the spatially indirect to the spatially direct recombination is observed as the temperature is increased. The PL dependence of the excitation power shows an upshift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is ascribed to band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples.     

Optical and theoretical investigations of V ions in CdZnTe crystal

High-resistivity CdZnTe:V crystals are investigated by photoluminescence (PL) and by time-resolved PL in the infrared spectral range. A double peaked emission band is detected around 0.8 eV and it is related to vanadium doping. No-phonon lines of the internal transitions were detected. This emission is interpreted as a balance between the ⁴T₁(⁴P)→⁴T₁(⁴F) internal transition and an electronic transition from the conduction band to the ⁴T₁(⁴F) ground state of V²⁺. The corresponding decay time after laser excitation gives evidence to the contribution of two different recombination processes. These two emission bands are separated by time-resolved luminescence. Crystal-field calculations of the detected transition energies based on Tanabe-Sugano scheme are presented and the Racah parameter B and crystal-field intensity D_q were determined.In addition, a model is developed in terms of one-electron orbital, to explain the characteristics of the PL excitation processes of V²⁺. Excitations with above and below band edge energy confirm the proposed schemes.