Pentacene as a hole transport material for high performance planar perovskite solar cells

A cost-effective and efficient organic semiconductor pentacene was developed as a hole transport layer (HTL) material to replace classical PEDOT:PSS for planar perovskite solar cells (PSCs). As expected, the pentacene based device exhibits power conversion efficiency (PCE) of 15.90% (J_sc of 19.44 mA/cm², V_oc of 1.07 V, and FF of 77%), comparable to the PEDOT:PSS based device (PCE of 15.65%, J_sc of 18.78 mA/cm², V_oc of 1.07 V, and FF of 77%) under the same experimental conditions. The excellent performance of vacuum deposited pentacene is mainly attributed to the high efficient charge extraction and transfer in device due to the high-quality perovskite film grown on the top of pentacene substrate and a favorable energy-level alignment together with a desired downward band bending formed at the perovskite/pentacene interface. Our research has confirmed that pentacene could be served as a promising HTL material to achieve effective and potentially economical planar type PSCs.     

Searching of new,cheap, air- and thermally stable hole transporting materials for perovskite solar cells

In this work, two thermal- and air-stable, hole transporting materials (HTM) in perovskite solar cells are analyzed. Those obtained and investigated materials were two polyazomethines: the first one with three thiophene rings and 3,3′-dimethoxybenzidine moieties (S9) and the second one with three thiophene rings and fluorene moieties (S7). Furthermore, presented polyazomethines were characterized by Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, atomic force microscopy (AFM) and thermogravimetric analysis (TGA) experiments. Both polyazomethines (S7 and S9) possessed good thermal stability with a 5% weight loss at 406 and 377 °C, respectively. The conductivity of S7 was two orders of magnitude higher than for S9 polymer (2.7 × 10^?8 S/cm, and 2.6 × 10^?10 S/cm, respectively). Moreover, polyazomethine S9 exhibited 31 nm bathochromic shift of the absorption band maximum compared to S7.Obtained perovskite was investigated by UV–vis and XRD. Electrical parameters of perovskite solar cells (PSC) were investigated at Standard Test Conditions (STC). It was found that both polyazomethines protect perovskite which is confirmed by ageing test where V_oc did not decrease significantly for solar cells with HTM in contrast to solar cell without hole conductor, where V_oc decrease was substantial. The best photoconversion efficiency (PCE = 6.9%), among two investigated in this work polyazomethines, was obtained for device with the following architectures FTO/TiO₂/TiO₂ + perovskite/S7/Au. Stability test proved the procreative effects of polyazomethines on perovskite absorber.     

Inverted structure perovskite solar cells: A theoretical study

We analysed perovskite CH₃NH₃PbI_3-xCl_x inverted planer structure solar cell with nickel oxide (NiO) and spiro-MeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.     

Impact of work function of back contact of perovskite solar cells without hole transport material analyzed by device simulation

The impact of the work function of a metal back contact on lead methylammonium tri-iodide based perovskite solar cells without hole transport material (HTM) was analyzed using device simulation. The elimination of the HTM is attractive in terms of the simplification of device structure and fabrication process. In the solar cell, a back junction is formed by the perovskite absorber and metal back contact. The device simulation revealed that the elimination of the HTM did not change the built-in voltage (V_bi) of the device when the work function of the metal back contact (?_M) was similar to the valence band maximum of the absorber (E_{v_absorber}). In the HTM-free structure, V_bi showed a high value if ?_M was equal to or deeper than E_{v_absorber}. In contrast, when ?_M was shallower than E_{v_absorber}, V_bi monotonically decreased, resulting in the decrease in open-circuit voltage of the device. The results showed the importance of the ?_M matching to maintain V_bi, which is useful guideline for the design of the HTM-free perovskite solar cells.     

A facile and low-cost fabrication of TiO2 compact layer for efficient perovskite solar cells

A uniform and compact hole blocking layer is necessary for high efficient perovskite-based thin film solar cell. In this study, we fabricated TiO₂ compact layers by using a simple dip-coating method in contrast to the widely used techniques such as spin coating and spray pyrolysis. In this study, we optimized the surface morphologies of dip-coating based TiO₂ compact layers by controlling the concentration of Ti precursor solution diluted in ethanol. The analyses of devices performance characteristics showed that thickness and surface morphologies of different TiO₂ compact layers played a critical role in affecting the efficiencies. The dip-coating route to prepare TiO₂ compact layers employed in this study is more amenable to fabricate the large area device and less expensive.     

新型空穴传输材料在钙钛矿太阳能电池中的研究进展

钙钛矿太阳能电池是一种全新的全固态薄膜电池. 报道的能量转换效率已提高到19.3%, 成为可再生能源领域的热点研究方向. 空穴传输材料是构成高效钙钛矿太阳能电池的重要组分之一. 本文介绍了钙钛矿太阳能电池的基本结构, 对空穴传输材料的分子结构、能级水平和迁移率等对电池性能的影响进行了详细的总结和评述.     

Non-peripherally octaalkyl-substituted nickel phthalocyanines used as non-dopant hole transport materials in perovskite solar cells

This report presents two non-perihperally octaalkyl-substituted nickel phthalocyanines (NiPcs), namely, NiEt₂Pc and NiPr₂Pc, for use as dopant-free hole transport materials in perovskite solar cells (PSCs). The length extension of the alkyl chains from ethyl to propyl significantly tunes the NiPcs' energy levels, thus reducing charge carrier recombination at the perovskite/hole transport layer (HTL) interface and leading to higher open-circuit voltage (V_OC) and short-circuit current density (J_SC) observed for the NiPr₂Pc-based PSC. And higher charge carrier mobility, higher thin film crystallinity, and lower surface roughness of the NiPr₂Pc HTL compared with that of the NiEt₂Pc one also lead to higher J_SC and fill factor (FF) observed for the NiPr₂Pc-based device. Consequently, the NiPr₂Pc-based PSC exhibits a higher power conversion efficiency (PCE) of 14.07% than that of the NiEt₂Pc-based device (8.63%).     

Highly efficient perovskite solar cells by tuning electronic structures of thienothiophene-based as hole transport materials

The atomic substitutions were used to study the hole transport materials (HTM) properties of six thiophenothiophene molecules (HTM1-HTM6) to reveal the relationship between their core structures and photoelectric properties. To better investigate the difference between experimentally original and designed molecules, we calculated the hole mobility and some parameters (such as energy levels, stability, and optical properties, etc). The results showed that the molecular orbital levels of the original and designed molecules have well matched with perovskite and Ag electrode to ensure hole transport and inhibit the electron reflux. Among the designed HTMs, HTM5 has the smallest energy gap that results in the red-shifted absorption spectra. Furthermore, there is an obviously increased charge transfer integral V due to the introduction of the Si atom, which greatly improved the hole mobility. Therefore, atom substitution by introducing Si atoms (HTM5) will improve the energy levels and charge transport ability, and molecular design by means of atom substitution can be a potential way to tunable HTM performance in solar cells.     

A silazane additive for CsPbI2Br perovskite solar cells

Adding additives into peroskite precursor solution has been proven as a simple and efficient strategy to improve the quality of peroskite films. In this work, we demonstrate an effective additive strategy to improve the quality of all-inorganic perovskite films by adding a novel silazane additive heptamethyldisilazane (HDMS). The power conversion efficiency (PCE) of the optimized devices is enhanced from 14.55% to 15.31% with an open-circuit voltage over 1.26 V due to the higher quality perovskite films with lower trap density after the incorporation of HDMS. More interestingly, the HDMS devices exhibit superior humidity and thermal stability compared with the control ones. This work provides a simple and efficient strategy to enhance the device performance and stability of all-inorganic perovskite solar cells, which could facilitate its commercialization.     

Sputtered SnO2 as an interlayer for efficient semitransparent perovskite solar cells

SnO₂ is widely used as the electron transport layer (ETL) in perovskite solar cells (PSCs) due to its excellent electron mobility, low processing temperature, and low cost. And the most common way of preparing the SnO₂ ETL is spin-coating using the corresponding colloid solution. However, the spin-coated SnO₂ layer is sometimes not so compact and contains pinholes, weakening the hole blocking capability. Here, a SnO₂ thin film prepared through magnetron-sputtering was inserted between ITO and the spin-coated SnO₂ acted as an interlayer. This strategy can combine the advantages of efficient electron extraction and hole blocking due to the high compactness of the sputtered film and the excellent electronic property of the spin-coated SnO₂. Therefore, the recombination of photo-generated carriers at the interface is significantly reduced. As a result, the semitransparent perovskite solar cells (with a bandgap of 1.73 eV) based on this double-layered SnO₂ demonstrate a maximum efficiency of 17.7% (stabilized at 17.04%) with negligible hysteresis. Moreover, the shelf stability of the device is also significantly improved, maintaining 95% of the initial efficiency after 800-hours of aging.     

ZnO nanorods on undoped and indium-doped ZnO thin films as a TCO layer on nonconductive glass for dye-sensitized solar cells

We present the growth of ZnO nanostructures on indium-doped ZnO film on a non-conductive glass substrate. The indium-doped ZnO film was used as the transparent conductive layer replaces the ITO layer. Various indium doping concentrations can change the electrical properties of ZnO film. The reduced electrical resistivity was investigated from 16.60 × 10⁻² to 10 × 10⁻² Ω cm. after doping with the optimal concentration of 2 wt% indium. It is found that the characteristic of ZnO nanostructures was strongly affected with indium doping concentration in ZnO films. The overall structural characteristics of ZnO ranged from 100–500 nm in size and 7–10 μm in length and the branch-like structures can be revealed from the 2 wt% indium-doped ZnO film. The room-temperature photoluminescence spectra show a sharp ultraviolet band of 353 nm, indicated to the ZnO nanorods structure. The branch-like structures on the 2 wt% indium-doped film can be yielded the photovoltaic properties with a short-circuit current density of 3.96 mA/cm², an open-circuit voltage of 0.72 V, a fill factor of 20% and an overall power conversion efficiency of 0.56% under irradiance of 100 mW/cm² (AM 1.5 G).