Annealed Treatment Effect in Poly（3-hexylthiophene）：Methanofullerene Solar Cells

Polymer photovoltaic devices based on poly（3-hexylthiophene） （P3HT） ： [6,6]-phenyl-C61-butyricacid methyl ester （PCBM） 1：1 weight-ratio blend are reported. The effects of various annealing treatments on the device performance are investigated. Thermal annealing shows significant improvement of the device performances. For devices at 130℃ annealing, maximum power conversion efficiency （PCE） of 3.3% and All factor up to 60.3% is achieved under air mass 1.5, 100 m W/cm^2 illumination. We discuss the effect of thermal annealing by the results of ultraviolet-visible absorption spectroscopy （UV-vis）, dark current-voltage curve, atomic force microscopy （AFM）.     

Effects of optical interference and annealing on the performance of poly （3-hexylthiophene）： fullerene based solar cells

<正>In this paper,the effects of optical interference and annealing on the performance of P3HT:PCBM based organic solar cells are studied in detail.Due to the optical interference effect,short circuit current density(J_SC) shows obvious oscillatory behaviour with the variation of active layer thickness.With the help of the simulated results,the devices are optimized around the first two optical interference peaks.It is found that the optimized thicknesses are 80 and 208 nm.The study on the effect of annealing on the performance indicates that post-annealing is more favourable than pre-annealing.Based on post-annealing,different annealing temperatures are tested.The optimized annealing condition is 160℃for 10 min in a nitrogen atmosphere.The device shows that the open circuit voltage V-（OC） achieves about 0.65V and the power conversion efficiency is as high as 4.0%around the second interference peak.     

Charge transport in monolayer poly（3-hexylthiophene） thin-film transistors

It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.     

High-photosensitivity polymer thin-film transistors based on poly（3-hexylthiophene）

Polymer thin-film transistors(PTFTs) based on poly(3-hexylthiophene) are fabricated by the spin-coating process,and their photo-sensing characteristics are investigated under steady-state visible-light illumination.The photosensitivity of the device is strongly modulated by gate voltage under various illuminations.When the device is in the subthreshold operating mode,a significant increase in its drain current is observed with a maximum photosensitivity of 1.7×10 3 at an illumination intensity of 1200 lx,and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx.However,when the device is in the on-state operating mode,the photosensitivity is very low:only 1.88 at an illumination intensity of 1200 lx for a gate voltage of-20 V and a drain voltage of -20 V.The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light.The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.     

Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly（3-hexylthiophene） field-effect transistors

In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17×10^ - 2~m²/(V.s) by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150~℃ for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00×10^ - 2 ~cm²/(V.s).     

Effects of annealing rate and morphology of sol–gel derived ZnO on the performance of inverted polymer solar cells

The effects of annealing rate and morphology of sol–gel derived zinc oxide(ZnO)thin films on the performance of inverted polymer solar cells(IPSCs)are investigated.ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs.The undulating morphologies of ZnO films fabricated at annealing rates of 10 C/min and 3 C/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 C/min.The ZnO films are characterized by atomic force microscopy(AFM),optical transmittance measurements,and simulation.The results indicate that the ZnO film formed at 3 C/min possesses a good-quality contact area with the active layer.Combined with a moderate light-scattering,the resulting device shows a 16%improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.     

Performance improvement of CdS/Cu（In,Ga）Se2 solar cells after rapid thermal annealing

In this paper, we investigated the effect of rapid thermal annealing (RTA) on solar cell performance. An opto-electric conversion efficiency of 11.75% (Voc=0.64 V, Jsc = 25.88mA/cm2 , FF=72.08%) was obtained under AM 1.5G when the cell was annealed at 300℃ for 30s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction (XRD), Raman spectra, front surface reflection (FSR), internal quantum efficiency (IQE), and X-ray photoelectron spectroscopy (XPS) were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu(In, Ga)Se2 (CIGS) layers. This leaded to the improved performance of CIGS solar cell.     

Effects of concentration and annealing on the performance of regioregular poly（3-hexylthiophene） field-effect transistors

This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5~wt% to 2~wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2~wt% can reach 5.78× 10^-3~cm²/Vs which is higher by a factor of 13 than that with 0.5~wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09~cm²/Vs by thermal annealing at 150~℃, and the value of on/off current ratio can reach 10^4.     

Performance improvement cells using bathocuproine of MEH-PPV：PCBM solar and bathophenanthroline as the buffer layers

In this work, bathocuproine （BCP） and bathophenanthroline （Bphen）, commonly used in small-molecule organic solar cells （OSCs）, are adopted as the buffer layers to improve the performance of the polymer solar cells （PSCs） based on poly（2-methoxy-5-（2-ethylhexyloxy）-1,4-phenylenevinylene） （MEH-PPV）： [6,6]-phenyl-C61-butyric acid methyl ester （PCBM） bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-am BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen （i） increasing the optical field, and hence the absorption in the active layer, （ii） effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum （Al） interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance （Rs）, and （iii） preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

Conformational Transition of Poly （Acrylic Acid） Detected by Microcantilever Sensing

Poly （acrylic acid） （PAA） chains are grafted on one side of a microcantilever by the self-assembled method and the deflections of the microcantilever are detected as a function of medium pH from 3 to 11. It is found that when the pH varies, the microcantilever deflects because of the changing surface stress. By analysing the electrostatic repulsive effect, the surface stress change is related to the conformation transition of PAA from a collapse state to a swelling state. This method offers the interaction information among the polymer chains during the conformational transition and affords an alternative way to study conformational change of polymers.     

Enhancing the performance of poly(3-hexylthiophene)/ZnO nanorod arrays based hybrid solar cells through incorporation of a third component

Sparse ZnO nanorod arrays(NRAs)are fabricated on transparent conducting oxide coated glass substrates by using a modified liquid phase epitaxial growth method.By adjusting the polymer concentrations and the spin-coating parameters,full infiltration of poly(3-hexylthiophene)(P3HT)into the as-prepared ZnO NRAs is achieved at 130°C in vacuum.A third component is incorporated into the P3HT/ZnO NRAs ordered bulk heterojunctions(BHJs)either through ZnO surface modification with N719dye or CdS shell layer or by inclusion of a fullerene derivative into the P3HT matrix.Experimental results indicate that performances of the hybrid solar cells are improved greatly with the incorporation of a third component.However,the working principles of these third components differ from one another,according to morphology,structure,optical property,charge transfer and interfacial properties of the composite structures.An ideal device architecture for hybrid solar cells based on P3HT/ZnO NRAs ordered BHJs is proposed,which can be used as a guidance to further increase the power conversion efficiency of such solar cells.     

Effects of molecular weight and polydispersity of poly (3-hexylthiophene) in bulk heterojunction polymer solar cells

This paper reports the effect of the molecular weight (MW) and polydispersity (PD) of poly (3-hexylthiophene) (P3HT) in bulk heterojunction polymer solar cells (BHJ-SCs). The P3HT with low MW and broad PD exhibited higher crystallinity compared to that with high MW and narrow PD. Due to the improved crystallinity, the BHJ-SCs based on P3HT with low MW and broad PD showed performance with a power conversion efficiency of 3.8% with short-circuit currents of −9.90 mA/cm².     

Annealing-free Poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester-based organic solar cells

We report on the fabrication of efficient annealing-free organic solar cells using co-solvent solution considered as a promising method for low-cost and time-saving manufacturing. Higher device efficiency could be obtained compared to the pure solvent casted device, resulting from the improved crystallinity, optical absorption and transport properties. The power conversion efficiency of 2.8% was obtained, demonstrating the feasibility of achieving low-cost and high-efficiency organic solar cells without any additional treatment and processing additives.     

Electron mobility in poly(3-hexylthiophene) enhanced by gamma-ray irradiation

Gamma-ray irradiation effects on the photoresponsive thin-film devices based on the regioregular poly(3-hexylthiophene) (RR-P3HT) conjugated polymer have been studied by means of atomic force microscopy, UV–vis absorption, photoluminescence (PL), and time-of-flight measurements. As a result, increased light absorption in the red region and PL quenching induced by the irradiation were observed. Besides, enhancement of the electron/hole mobilities, attributable to improved ordering or increased nanodomain size of the P3HT thin films, was revealed.     

低工作电压聚噻吩薄膜晶体管

以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷(OTS)对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管(PTFT).PTFT器件测试结果表明,该晶体管在低的驱动电压(<-1 V)下仍呈现出良好的饱和行为,其阈值电压和有效场效应迁移率分别为0.4 V和2.2×10^-2 cm²/V ·s.通过对金属-聚合物-氧化物 关键词： 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 k栅介质')" href="#">高k栅介质     

MoO3/Ag/AI/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.     

MoO_3/Ag/Al/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester(P3HT and PCBM) active layer for inverted tandem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell(3.15%).The open-circuit voltage of the tandem cell(1.18 V) approaches double that of the single cell(0.61 V).     

不同比例的MEH-PPV与PCBM共混体系光电池性能研究

以MEH-PPV(poly(2-methoxy-5-(2^/-ethylhexoxy)-1,4-phenylene vinylene)为电子给体材料(donor,D), PCBM(1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6)C₆₁)为电子受体材料(acceptor,A),制成了不同比例的共混体系太阳电池.从不同比例的D/A材料共混体系的原子力图、光荧光谱、器件的单电荷传输的暗导J-V图、太阳电池的光敏图及器件双电荷传输的光、暗导J-V图方面,详细分析了不同比例的D/A材料对器件性能影响.得出了当D/A材料比例为1∶4时,器件中活性层能形成良好的互穿网络,光生激子能有效地分离,被分离的电荷能有效地传输,太阳电池的性能最好.其光电池在100mW/cm²强度光照下,其开路电压V_oc为0.8V,短路电流密度J_sc为3.47mA/cm²,填充因子FF为55.9%,能量转换效率η为1.55%. 关键词： 太阳能电池 聚合物 性能