有机发光二极管光取出技术研究进展

有机发光二极管(OLED)在通信、信息、显示和照明等领域均显现出巨大的商业应用前景,十几年来一直是光电信息领域的研究热点之一.但是,OLED的外量子效率远低于内量子效率,极大程度地制约了其发展和应用.本文主要介绍了多种有效提高器件效率的光取出技术,对微透镜、光子晶体结构、纳米图案和纳米多孔膜以及微腔技术等多种OLED修饰方法进行了回顾和讨论.在此基础上,对一些光取出技术的研究做了展望.     

发光效率及稳定性改善的有机薄膜电致发光器件

不久前,我们报导了以TPD为空穴传输层,Alq为电子传输兼发光层的双层薄膜电致发光器件,在定电流密度6mA/cm2连续驱动下,初始亮度106cd/m2下降至一半亮度的时间为120小时,而继续操作500小时,亮度仍有38cd/m2[1]。在这篇文章中,我们将报道一个在上述器件的空穴传输层TPD中掺杂而构成的新器件。这个新器件发光亮度和效率比原器件增加了50%,而稳定性增加了近10倍,初始亮度165cd/m2的半亮度寿命达1200小时。     

利用有机层间互相掺杂提高有机电致发光器件的效率

提高器件的发光效率是实现有机电致发光器件实用化的一个关键因素。通过对器件结构和制作工艺的优化设计，将有机电致发光器件的各个功能层进行互相掺杂，在层间形成互掺过渡层达到平衡载流子的注入，使得注入的电子和空穴有效地限制在互掺的有源区内，增加了载流子相遇复合的几率，进而提高器件的发光效率。器件的最大电流效率在外加电压10．5V时达到7．9cd／A，最大发光亮度在35V时达到49000cd／m^2。和一般掺杂器件相比效率提高2倍以上。同时有机层间的互相掺杂也在一定程度上消除了层问的界面，减少了有机层问的缺陷，与没有过渡层的器件相比，器件老化性能有了明显改善。     

可调色红光有机电致发光器件

介绍了具有可调节发光光谱的高效红光有机发光二极管(OLED)器件,利用具有高三重态能量的9.9-螺二芴二苯基氧化磷(SPPO1)作为发光层的主体材料及空穴阻挡层,二(1-苯基异喹啉)(乙酰丙酮)合铱(III) (Ir(piq)2(acac))作为客体发光材料,在发光层内SPPO1的能量分别由福斯特和迪克斯特传递到Ir(piq)2(acac)的单重态和三重态从而发出红色磷光,通过调节磷光客体材料的比例得到最优器件结构,从而得到具有较好发光效率和发光亮度并可调节色纯的有机发光二极管器件。     

可调色红光有机电致发光器件

介绍了具有可调节发光光谱的高效红光有机发光二极管(OLED)器件,利用具有高三重态能量的9.9-螺二芴二苯基氧化磷(SPPO1)作为发光层的主体材料及空穴阻挡层,二(1-苯基异喹啉)(乙酰丙酮)合铱(III) (Ir(piq)2(acac))作为客体发光材料,在发光层内SPPO1的能量分别由福斯特和迪克斯特传递到Ir(piq)2(acac)的单重态和三重态从而发出红色磷光,通过调节磷光客体材料的比例得到最优器件结构,从而得到具有较好发光效率和发光亮度并可调节色纯的有机发光二极管器件。     

白光有机发光器件的研究进展

白光有机发光器件(OLED)能够产生高效饱和的白光,且具有驱动电压低、材料柔性好、可实现大面积显示等特点,在信息显示与固态照明等领域有巨大的应用潜力.目前白光OLED主要分为单发光层、多发光层、下转换、叠层等结构,不同的结构具有各自的优势,都受到了很大关注.首先介绍了白光OLED的性能指标.接着,结合所开展的研究工作综述了白光OLED在结构和性能方面的研究进展,总结了实现高效白光OLED的各种方法,重点探讨了提高白光OLED性能的途径及所面临的挑战. 最后,展望了白光OLED的发展趋势. 关键词： 白光有机发光器件 固态照明 电致磷光 光取出     

有机电致发光白光器件的研究进展

在十多年的时间里,有机电致发光二极管(Organic Lightemitting Diodes,OLEDs)的研究和应用取得了长足的进展。有机电致发光器件具有许多优点,例如:自发光、视角宽、响应快、发光效率高、温度适应性好、生产工艺简单、驱动电压低、能耗低、成本低等,因此有机电致发光器件极有可能成为下一代的平板显示终端。有机电致发光白光器件因为可以用于全彩色显示和照明,已成为OLED研究中的热点。介绍了有机电致发光白光器件的研究进展,按发光的性质将白光器件分为荧光器件和磷光器件两类,按发光层数将白光器件分为单层和多层器件,对相关材料、器件结构、发光机理等方面进行了讨论。     

一种白光有机电致发光器件的制备

通过对器件结构的优化设计，提高了白光电致发光器件中蓝光成分的发光效率，从而得到了一种较为理想的有机白光电致发光器件。驱动电压为5V时，电流密度J=0．5mA／cm^2，器件的效率达到最大，流明效率为1．92 lm／W，此时器件的发光亮度接近20cd／m^2。色坐标为(x=O．317，y=0．328)。非常接近白光等能点．是色度很好的白光。并且在很大范围内，色度随器件的驱动电压或电流变化不大，当驱动电压变化至15V时。f=232mA／cm^2，色坐标变化至(x=0．338，y=O．353)。在电压为22V时，器件的亮度达到最大，为17 000cd／m^2。此外器件结构相对简单。器件制备的可重复性得到很大程度的改善。     

有机电致发光材料与器件

简要介绍了有机电致发光器件的结构、电致发光机理、可用作电致发光材料的种类以及存在的一些问题，简述了电致发光材料及器件的研究现状及对未来的展望。     

有机电致发光材料分子与器件结构设计

有机电致发光器件是当今显示器件的研究热点，越来越多的人们致力于开发高性能的发光材料和研制高效率的器件结构。本文就有机发光材料的分子结构设计，以及提高有机发光器件性能的主要途径作一简要论述。     

Grating amplitude effect on electroluminescence enhancement of corrugated organic light-emitting devices

We report grating amplitude dependence of electroluminescence (EL) in organic light-emitting devices with one-dimensional corrugated structure. Our proposed devices can emit light from both the top silver and bottom quartz side, and both exhibit amplitude-dependence EL enhancement. The effect of grating amplitude on the EL intensity has been studied experimentally and numerically to find out the optimal grating amplitude for the greatest EL enhancement. We deduce from the numerical simulations and experimental results that surface plasmon-polariton modes and waveguide modes are coupled out of the corrugated devices efficiently at the optimal amplitude; therefore, higher efficiency of light extraction could be realized.     

High-external-quantum-efficiency organic light-emitting devices

We study the internal and external quantum efficiencies of vacuum-deposited organic light-emitting devices (OLED's). The internal quantum efficiency of OLED's based on tris-(8-hydroxyquinoline) aluminum is calculated to be 5.7 times the observed external quantum efficiency ?(e), consistent with measurements. We demonstrate a shaped substrate that increases ?(e) by a factor of 1.9+/-0.2 over similar OLED's fabricated upon flat glass substrates and leads to a 100%-emissive aperture, i.e., the emitting area completely occupies the display area even in the presence of metal interconnects. We also discuss a substrate structure that increases ?(e) by an additional factor of 2. The high device efficiencies are promising for developing OLED-based displays with extremely low power consumption and increased operational lifetime.     

White organic light-emitting devices

In view of their potential applications in flat panel displays, organic light-emitting devices have attracted much attention in the past decade. A challenging target in this field is to realize full color display applications. One of the approaches proposed for these is combining white emission with color filters, where efficient and pure white emission (especially at high brightness) is necessary. In this paper, three kinds of white organic light-emitting devices with different structures and materials are fabricated and their characteristics are discussed.     

Implementation of anti-reflection coating to enhance light out-coupling in organic light-emitting devices

We report significant enhancement of light out-coupling in organic light-emitting devices (OLEDs) by means of anti-reflection coating of magnesium fluoride (MgF₂) on the backside of glass substrate. OLEDs were fabricated by employing the green electrophosphorescent material fac tris-(2-phenylpyridine) iridium [Ir(ppy)₃] doped in 4,4′,8-N,N-8-dicarbazole-biphenyl (CBP) and 0.4 wt% tetrafluorotetracyano-quinodimethane (F4-TCNQ)-doped naphthylphenylbiphenyl diamine (α-NPD) as hole transport layer (HTL). Single-layer MgF₂ with the thickness of λ/4 was then vacuum deposited on the backside of glass substrate of OLED. About two-fold enhancement in luminance with anti-reflection coating of MgF₂ has been observed.     

有机发光器件的磁电导效应

制备了基于三(8-羟基喹啉)铝(tris-(8-hydroxyquinoline) aluminum (III), Alq₃) 的有机发光二极管, 并在不同偏压下测量了器件的室温磁电导效应.在小偏压下, 发光器件展示出明显的负磁电导效应.偏压增加后, 磁电导由负值变为正值, 出现了正负转变的现象. N, N'-二苯基-N, N'-(1-萘基)-1, 1'-联苯-4, 4'-二胺(N, N′-Di(naphthalen-1-yl)-N, N′ diphenyl-benzidine, NPB) 与铜酞菁 (Copper phthalocyanine, CuPc) 单极器件磁电导的测量结果表明, 发光器件在小偏压下的负磁电导效应来源于器件中的CuPc层. 双极电流的磁电导效应可用电子-空穴对模型进行解释, 而单极电流的磁电导效应可归因于器件中的极化子-双极化子转变. 在注入电流的变化过程中, 发光器件的正负磁电导转变是两种机理共同作用的结果.     

High-contrast top-emitting organic light-emitting devices

In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni(30 nm)/MgF 2(62 nm)/ZnS(16 nm)/Ni(20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A(at 62.3 mA/cm 2) together with a very stable chromaticity.The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m 2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.     

Light extraction via leaky modes in organic light emitting devices

Display and illumination technology require light sources with angular independent emission behaviour. Conversely, a strongly angular dependent spectral emission can be desirable for other applications in information technology or spectroscopy. In order to elucidate the potential of organic light-emitting devices (OLEDs) for the latter fields, we performed experimental and numerical studies of the angular dependent emission characteristics of cavity like OLEDs. The light generated in the organic multilayer structure and guided in leaky modes was coupled out by a prism. Here, a semitransparent gold anode, acting as a hole injection layer, was used to enhance the coupling of leaky modes guided inside the OLED to external modes (Kretschmann configuration). The observed light emission was strongly angle dependent, with the spectral emission peak of the device shifting from a wavelength of 680 nm to 500 nm as the angle is varied between 20° and 70° with respect to the normal of the substrate plane. Also, the emitted light shows a high degree of polarization. The observed behaviour can be predicted quantitatively by simulations, which are based on the transfer matrix formalism.     

Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement

In this study, we demonstrated a simple method that can be used to simultaneously modulate the far field pattern and enhance the light extraction of GaN-based light-emitting diodes (LEDs). In this method, microstructures were imprinted on a reliable spin-on-glass surface on top of a transparent conductive layer. The far-field pattern was modulated using microoptical structures, and at the same time, the light extraction was enhanced owing to the small refractive index difference and surface roughness. There was no decrease in the electrical performance of these devices. The peak intensity shifted from 0 to 22° in one-dimensional (1D) asymmetrically blazed periodic structures, and a flattened distribution with a uniform intensity within a span of 110° was observed in two-dimensional (2D) symmetrically periodic structures. This method achieved 13 and 40% light enhancements for 1D and 2D structures, respectively.     

Numerical model of multilayer organic light-emitting devices

A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I--V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.     

Negative capacitance in doped bi-layer organic light-emitting devices

This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer,the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured.Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages.The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.