Sn1-xSbxO2固溶体电极的形成能与电子结构

为研究Sb掺杂对Ti/SnO2电极稳定性与导电性的影响, 采用基于密度泛函理论的平面波赝势方法对金红石型SnO2及不同比例Sb掺杂SnO2体系进行了第一性原理计算, 用广义梯度近似方法优化了Sn1-xSbxO2固溶体电极的晶体结构, 计算了掺杂前后体系的电子结构以及不同掺杂比例时的形成能. 结果表明: Sb替代Sn后, 晶格常数与晶胞体积均增加, 但掺杂形成能随掺杂量变化不大, 在掺杂量为0.083时掺杂形成能达到最低值5.08 eV,稳定性最好. 掺杂Sb后, 在费米能级至最低导带处存在Sb 5s电子态分布, 产生施主能级; 同时Sb掺杂后, 在导带底形成的可填充电子数也从未掺杂的4增加到了掺杂后的19, 导电性明显增强, 且在掺杂量为0.063时导电性最强. 本文的计算结果为钛基Sn1-xSbxO2氧化物电极的开发与应用提供了理论依据.     

五甲川菁染料敏化SnO_2纳光结构多孔膜电极的光电化学研究

研究了五甲川菁敏化SnO_2纳米结构电极的光电化学行为.结合循环伏安曲线图及五甲川菁的光吸收阈值,初步确定五甲川菁染料电子基态和激发态能级位置.结果表明,五甲川菁染料电子激发态能级位置能与SnO_2纳米粒子导带边位置相匹配,因而使用该染料敏化可以显著地提高SnO_2纳米结构电极的光电流,使SnO_2纳米结构电极吸收波长红移至可见光区和近红外区,光电转换效率得到明显改善,IPCE值(单色光的转换效率)最高可达45.7％.     

Ru掺杂LiFePO4电子结构和性能的第一性原理研究

基于第一性原理和超软赝势平面波方法,对Ru掺杂LiFePO_4的原子几何结构和电子结构进行了研究。结果表明Ru掺杂后LiFePO_4晶胞参数a和b显著降低,晶胞参数c略微的增大,掺杂后晶胞体积收缩;当掺杂量为0.01时体系Fermi能最高,能量密度高。掺杂体系在Fermi能级附近态密度电子峰强度增大,态密度峰向低能方向移动,掺杂后能级减小,有利于LiFePO_4导电性能增强。能带计算结果显示,随着掺杂量的增加,体系带隙降低,能带下降,导带底向费米面移动,电子从价带跃迁到导带更加容易。电化学性能测试结果显示,当Ru的掺杂量较小时(0.01),费米面附近能带数增加,有利于电子传递,材料表现出最佳的放电比容量和倍率性。当掺杂量较大时(0.05,0.1),过多Ru将阻碍Li~+扩散通道,不利于电极材料的倍率性能。Ru掺杂能影响LiFePO_4电子结构,改善LiFePO_4性能,掺杂量不宜太大。     

藻胆蛋白的Langmuir-Blodgett膜——Ⅱ.R-藻红蛋白的光电化学性质研究

通过由R-藻红蛋白(R-PE)LB膜组成的光电池,研究了R-PE的电荷转移现象及光电化学行为.实验表明,由R-PE LB膜组成的光电池能产生光生电流,且当电解质溶液中存在电子给体和受体时光电流明显增大,说明R-PE光生电流的产生是由电荷转移引起的.进一步的对比实验说明,其光生电流是来源于蛋白所含发色团的光诱导电荷分离性质;光电流作用光谱也进一步证实了上述观点.当电解质溶液中存在或不存在电子给体时,光电流方向总是流向饱和甘汞电极(SCE),说明电子是从R-PE注入SnO_2光学透明电极(SnO_2 OTE)的导带;当电解质液中存在电子受体时,光电流方向总是流向SnO_2 OTE,说明这时电子是从SnO_2电极的导带注入R-PE分子.据此提出了R-PE光诱导电荷转移的机制.经测定由R-PE LB膜组成的光电池的光电转换量子效率Ф_(520MM)=3.4%,光生电势达400mV,且具有很好的光学稳定性,这说明R-PE是优良的生物光电转换功能材料.实验中,还测定了电解质溶液pH值,电子给体浓度,蛋白LB膜层数及光照时间对R-PE光电流的影响.     

锌掺杂对TiO2染料敏化电池光阳极中电荷俘获态分布及电子复合过程的影响

基于瞬态光电压和瞬态光电流技术研究了锌掺杂的TiO2染料敏化太阳能电池中电子复合及传输的动力学行为.通过实验获得了不同阳极掺杂条件下的电子复合时间常数与电子收集时间常数,考察了锌掺杂对电池阳极材料导带能级和电子俘获态的影响.研究结果表明,锌的掺杂在提高TiO2导带能级的同时延长了俘获态电子的复合时间常数,从而大大提高了电池的开路电压.     

过渡金属掺杂SnO_2的电子结构与磁性

采用密度泛函理论及赝势平面波方法,对未掺杂SnO_2以及过渡金属V、Cr、Mn掺杂SnO_2的超原胞体系进行了几何优化,计算了晶格常数、电子结构与磁学性质.结果表明,6.25%与12.5%两种掺杂浓度时,体系的电子自旋和磁学性质没有发生很大的变化;相对于未掺杂SnO_2,过渡金属掺杂后SnO_2中O原子有向过渡金属移动的趋势,并使得O与掺杂金属之间键长变短;在V和Cr掺杂后,SnO_2具有半金属性质,而Mn掺杂SnO_2没有发现上述性质.6.25%与12.5%的杂质浓度对自旋和磁矩影响不大,掺杂产生的磁矩主要来自于过渡金属3d电子态,且磁矩的大小与过渡金属的电子排布有关.V、Cr、Mn掺杂SnO_2后的总磁矩分别为0.94μ_B、2.0μ_B、3.00μ_B.磁矩主要来源于过渡金属3d轨道的自旋极化,当O原子出现负磁矩的时候,还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

Ru掺杂SnO2半导体固溶体的电子结构研究

运用基于密度泛函理论的第一性原理方法,建立了SnO₂以及不同比例Ru掺杂的SnO₂超胞模型,在对其进行几何优化后计算了Sn_1-xRu_xO₂(x=0,1/16,1/12,1/8,1/6,1/4,1/2)半导体的电子结构,并讨论了其晶格参数、电荷密度、能带结构和态密度(包括分态密度)等性质。结果表明,掺杂后,晶格参数随掺杂量的增加线性减小,与实验值的偏差在4%以内;掺杂后,在费米能级处可以提供更多的填充电子,使得电子跃迁至导带更容易,固溶体的导电性增强。为Sn_1-xRu_xO₂固溶体电极材料的发展和应用提供了理论基础。     

ATO包覆TiO2的导电性能研究

采用化学共沉淀法制备了Sb掺杂SnO_2包覆TiO_2的微纳米导电粉体。考察了不同Sb量对粉体的导电性能影响,通过XRD、SEM对粉体进行了表征。将导电粉体制成复合电极片,利用电化学工作站对其进行循环伏安和交流阻抗分析。结果表明,随着扫描速率的增加,氧化峰和还原峰分别向阴极和阳极移动,而且氧化还原峰的形状没有随着扫描速率的增加发生明显的变化;当m(SnCl_4·5H_2O)/m(SbCl_3)=10∶1时,容抗弧半径最小,且斜率最大,电阻最小,导电性最好。此结果与用电阻率测定仪测得电阻率的结果一致,说明利用交流阻抗法和循环伏安法考察导电粉体的导电性是可行的。     

Ru掺杂SnO2半导体固溶体的电子结构研究

运用基于密度泛函理论的第一性原理方法,建立了SnO₂以及不同比例Ru掺杂的SnO₂超胞模型,在对其进行几何优化后计算了Sn_1-xRu_xO₂(x=0,1/16,1/12,1/8,1/6,1/4,1/2)半导体的电子结构,并讨论了其晶格参数、电荷密度、能带结构和态密度(包括分态密度)等性质。结果表明,掺杂后,晶格参数随掺杂量的增加线性减小,与实验值的偏差在4%以内;掺杂后,在费米能级处可以提供更多的填充电子,使得电子跃迁至导带更容易,固溶体的导电性增强。为Sn_1-xRu_xO₂固溶体电极材料的发展和应用提供了理论基础。     

Unusual enhancement in electrical conductivity of tin oxide thin films with zinc doping

Electrical conductivity of SnO(2)-based oxides is of great importance for their application as transparent conducting oxides (TCO) and gas sensors. In this paper, for the first time, an unusual enhancement in electrical conductivity was observed for SnO(2) films upon zinc doping. Films with Zn/(Zn + Sn) reaching 0.48 were grown by pulsed spray-evaporation chemical vapor deposition. X-Ray diffraction (XRD) shows that pure and zinc-doped SnO(2) films grow in the tetragonal rutile-type structure. Within the low doping concentration range, Zn leads to a significant decrease of the crystallite size and electrical resistivity. Increasing Zn doping concentration above Zn/(Zn + Sn) = 0.12 leads to an XRD-amorphous film with electrical resistivity below 0.015 ? cm at room temperature. Optical measurements show transparencies above 80% in the visible spectral range for all films, and doping was shown to be efficient for the band gap tuning.     

Ti掺杂SnO2 半导体固溶体的第一性原理研究

Ti掺杂SnO2固溶体是钛基氧化物耐酸阳极的重要组成部分. 采用基于密度泛函理论的第一性原理对Sn1-xTixO2(x=0, 1/12, 1/8, 1/6, 1/4, 1/2, 3/4, 5/6)固溶体的电子结构进行计算, 分析了能带结构、 电子态密度和电荷密度以及晶格参数的变化. 结果表明, Ti掺入SnO2晶格后, 其晶格参数随组分增加近似呈直线降低, Ti-O键的共价性强于Sn-O键. 掺杂后带隙仍为直接带隙, 且随着掺杂比例的增加, 带隙逐渐减小. 当掺杂比例x=0.5时, 形成能达到最低值(-6.11 eV), 固溶体最稳定. 本文的计算结果为钛基氧化物电极材料的研究与开发提供了一定的理论依据.     

Optical and photocatalytic properties of heavily F(-)-doped SnO2 nanocrystals by a novel single-source precursor approach

Heavily F-doped SnO(2) nanocrystals were successfully prepared by a novel synthetic approach involving low-temperature oxidation of a Sn(2+)-containing fluoride complex KSnF(3) as the single-source precursor with H(2)O(2). The F-doped SnO(2) powder was characterized by powder X-ray diffraction, TG-MS, BET surface area, diffuse reflectance spectroscopy, XPS, PL, FTIR spectroscopy, Raman spectroscopy, EPR spectroscopy, SEM, and TEM. Broadening of the diffracted peaks, signifying the low crystallite size of the products, was quite evident in the powder X-ray diffraction pattern of SnO(2) obtained from KSnF(3). It was indexed in a tetragonal unit cell with lattice constants a = 4.7106 (1) ? and c = 3.1970 (1) ?. Agglomeration of particles, with an average diameter of 5-7 nm, was observed in the TEM images whose spotwise EDX analysis indicated the presence of fluoride ions. In the core level high-resolution F 1s spectrum, the peak observed at 685.08 eV was fitted by the Gaussian profile yielding the fluoride ion concentration to be 21.23% in the SnO(2) lattice. Such a high fluoride ion concentration is reported for the first time in powders. SnO(2):F nanocrystals showed greater thermal stability up to 300 °C when heated in a thermobalance under flowing helium, after which generation of small quantities of HF was observed in the TG coupled mass spectrometry analysis. The band gap value, estimated from the Kubelka-Munk function, showed a large shift from 3.52 to 3.87 eV on fluoride ion doping, as observed in the diffuse reflectance spectrum. Such a large shift was corroborated to the overdoped situation due to the Moss-Burstein effect with an increase in the carrier concentration. In the photoluminescence (PL) spectrum, SnO(2):F nanocrystals exhibited a broad green emission arising from the singly ionized oxygen vacancies created due to higher dopant concentration. The evidence for singly ionized vacancies was arrived from the presence of a signal with a g value of 1.98 in the ESR spectrum of SnO(2):F at room temperature. The disordered nature of the rutile lattice and the enormous oxygen vacancies created due to fluoride ion doping were evident from the broad bands observed at 455, 588, and 874 cm(-1) in the room-temperature Raman spectrum of SnO(2):F. As the consequence of the oxygen vacancies, F-doped SnO(2) was examined for the function as a photocatalyst in the degradation of aqueous RhB dye solution under UV irradiation. A very high photocatalytic efficiency was observed for the F-doped SnO(2) nanocrystals as compared to pure SnO(2). The BET surface area of pure SnO(2) was quite high (207.81 m(2)/g) as compared to the F-doped SnO(2) nanocrystals (45.16 m(2)/g). Pore size analysis showed a mean pore diameter of 1.97 and 13.97 nm for the pure and doped samples. The increased photocatalytic efficiency was related to the very high concentration of oxygen vacancies in SnO(2) induced by F doping.     

Calibration of XPS - energy scale for determination of the oxidation states of doping elements in SnO 2 powders

X-ray photoelectron spectroscopy (XPS) has been used to investigate the oxidation states of doping elements in doped SnO(2) powders. Because of low conductivity, however, charging and resulting peak shift is observed. To obtain the real peak position a suitable reference peak must be found in the XPS spectrum. In this study both internal (Sn3d(5/2) peak) and external references (Au4f(7/2) and C1 s) were examined. When external references were used a shift of all the peaks studied was observed; the extent of this depended on the doping element and the doping concentration. By doping with an element of valence >4 (Nb and Sb) we obtained peaks at binding energy (BE); doping with a trivalent element (In) led to peaks at values of the BE. This peak shift is connected with changes of Fermi level. In contrast, by using Sn3d(5/2) as reference we obtained results which enabled, for example, observation of the dependence of changes of the oxidation state of Sb on doping concentration.     

反尖晶石结构的Mg2SnO4系长余辉材料的研究进展及应用

Mg2SnO4具有典型的反尖晶石结构,由于存在大量缺陷,非常适合作为长余辉材料的基质材料,而且其成本低,结构稳定光学性能优异,应用前景非常广泛。通过在反尖晶石结构的Mg2SnO4材料中掺杂不同离子可以制备出不同性质的长余辉材料。本文主要介绍了Mg2SnO4系长余辉材料的常用的制备工艺方法和发光机理,从离子掺杂的角度分析其性能,并对反尖晶石结构的Mg2SnO4系长余辉材料在防伪、信息存储、成像等方面的应用现状进行了综述和展望。     

(Sn,Sb)O2-x基纳米结构厚膜材料气敏特性及机理

对采用水热合成技术所形成的纳米(Sn,Sb)O2 x晶粒结构、厚膜材料的气敏特性及其机理进行了研究,并采用XRD、TEM手段对纳米尺度的（Sn、Sb)O2 x晶粒的结构与表面效应及晶粒形态进行了表征.结果表明,当掺杂Sb5＋的浓度（摩尔分数xSb5＋)为（2.9～5.8)×10－6时,（Sn、Sb)O2 x纳米晶粒表面的电子缺陷浓度增大,增强了对气体的吸附能力,从而提高了对可燃性气体的灵敏度.同时可使晶粒保持短柱状的形态特征,对其灵敏度有一定的控制作用.     

Theoretical Study on the Structural and Electronic Properties of the Reduced SnO2 （110） Surface

The reduced SnO2(110) surface has been investigated by using first-principles method with a slab model. By examining the vacancy formation energy of three kinds of reduced SnO2(110) surfaces, the most energetically favorable defect surface is confirmed to be the surface with the coexistence of bridging and in-plane oxygen vacancies, which is different with the traditional model by only removing bridging oxygen. The results of band structure calculations indicate that the electronic structure of this defect surface is similar to the SnO surface.     

SnO2负载Au和M-Au(M=Pt,Pd)催化剂及其低温催化氧化CO性能

以SnO₂为载体, 采用沉积沉淀法(DP)、共沉淀法(CP)和浸渍法(IM)制备了金负载Au/SnO₂催化剂, 同时采用沉积沉淀法制备了M-Au/SnO₂(M=Pd, Pt)双金属负载催化剂. 通过X射线衍射(XRD)、BET比表面积测定、透射电镜(TEM)和X射线光电子能谱(XPS)等技术对样品进行表征, 并测定其对CO的催化活性. 结果表明: 与CP法和IM 法相比, DP法制备的Au/SnO₂-DP 催化剂, Au 颗粒(<5 nm)较小, 分布均匀; Au/SnO₂-DP 中的Au 是以金属态Au0存在, 而Au/SnO₂-CP 和Au/SnO₂-IM 中, 金以Au⁰和Au³⁺的混合价态存在, 在Au/SnO₂-DP和M-Au/SnO₂中的Au、Pt、Pd和SnO₂之间存在相互作用; Au/SnO₂-DP 催化性能明显优于Au/SnO₂-CP 和Au/SnO₂-IM. Au与Pt 和Pd的双金属复合催化剂催化活性明显提高. 不同方法制备Au/SnO₂催化活性的差别主要是由于Au颗粒大小和Au氧化态的不同而产生. 而M-Au/SnO₂活性提高, 可能是由于Au与Pt 和Pd之间的相互作用.     

Density functional theory study on the structural and electronic properties of low index rutile surfaces for TiO2/SnO2/TiO2 and SnO2/TiO2/SnO2 composite systems

The present study is concerned with the structural and electronic properties of the TiO2/SnO2/TiO2 and SnO2/TiO2/SnO2 composite systems. Periodic quantum mechanical method with density functional theory at the B3LYP level has been carried out. Relaxed surface energies, structural characteristics and electronic properties of the (110), (010), (101) and (00) low-index rutile surfaces for TiO2/SnO2/TiO2 and SnO2/TiO2/SnO2 models are studied. For comparison purposes, the bare rutile TiO2 and SnO2 structures are also analyzed and compared with previous theoretical and experimental data. The calculated surface energy for both rutile TiO2 and SnO2 surfaces follows the sequence (110) < (010) < (101) < (001) and the energy increases as (010) < (101) < (110) < (001) and (010) approximately = (110) < (101) < (001) for SnO2/TiO2/SnO2 and TiO2/SnO2/TiO2 composite systems, respectively. SnO2/TiO2/SnO2 presents larger values of surface energy than the individual SnO2 and TiO2 metal oxides and the TiO2/SnO2/TiO2 system renders surface energy values of the same order that the TiO2 and lower than the SnO2. An analysis of the electronic structure of the TiO2/SnO2/TiO2 and SnO2/TiO2/SnO2 systems shows that the main characteristics of the upper part of the valence bands for all the studied surfaces are dominated by the external layers, i.e., by the TiO2 and the SnO2, respectively, and the topology of the lower part of the conduction bands looks like the core layers. There is an energy stabilization of both valence band top and conduction band bottom for (110) and (010) surfaces of the SnO2/TiO2/SnO2 composite system in relation to their core TiO2, whereas an opposite trend is found for the same surfaces of the TiO2/SnO2/TiO2 composite system in relation to the bare SnO2. The present theoretical results may explain the growth of TiO2@SnO2 bimorph composite nanotape.